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Vishay Siliconix SI7810DN-T1-GE3
- Part No.:
- SI7810DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SI7810DN-T1-GE3.pdf
- Description:
- MOSFET N-CH 100V 3.4A PPAK1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:1,774
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Product details
Overview
SI7810DN-T1-GE3 from Vishay Siliconix is a N-channel 100-V (D-S) TrenchFET® Power MOSFET in PowerPAK® 1212-8 package, with RDS(on) = 0.062 Ω at VGS = 10 V, ID = 5.4 A, and low thermal resistance (RthJC = 1.9 °C/W). It serves as a primary-side switch in offline SMPS and in-rush current limiter in power supplies.
For engineers reviewing the SI7810DN-T1-GE3 datasheet, SI7810DN-T1-GE3 pinout, SI7810DN-T1-GE3 application, or SI7810DN-T1-GE3 equivalent, key selection criteria include its 100-V VDS, PWM-optimized switching performance, halogen-free compliance, low-profile 1.07 mm PowerPAK 1212-8 footprint, and verified avalanche energy rating (EAS = 18 mJ).
Technical Context
This MOSFET employs Vishay's TrenchFET® process for enhanced conduction efficiency and reduced gate charge (Qg = 13.5–17 nC), enabling fast switching in high-frequency DC-DC and AC-DC converters. Its gate threshold voltage (VGS(th) = 2–4.5 V) ensures robust turn-on control under varied bias conditions.
The PowerPAK® 1212-8 package delivers low junction-to-case thermal resistance (1.9 °C/W) and supports surface-mount reflow per JEDEC J-STD-020, while its leadless construction requires controlled solder profile per Vishay document 73257 - manual iron rework is not recommended.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports primary-side switching in universal-input offline flyback and forward converters |
| RDS(on) | 0.062 Ω @ VGS = 10 V, ID = 5.4 A - enables <1.7 W conduction loss at full rated current |
| Qg | 13.5–17 nC - reduces gate drive power and improves PWM efficiency above 100 kHz |
| EAS | 18 mJ - provides single-pulse avalanche ruggedness for unclamped inductive switching events |
| RthJC | 1.9 °C/W (typ.) - allows direct thermal coupling to PCB copper for passive heatsinking in space-constrained designs |
| VGS(th) | 2–4.5 V - ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V logic-level gate drivers |
| ID (TA = 25 °C) | 5.4 A continuous - sustains steady-state load current on 1" × 1" FR4 without forced air |
Pinout & Package
SI7810DN-T1-GE3 uses the PowerPAK® 1212-8 surface-mount package (3.3 mm × 3.3 mm, 1.07 mm height), featuring an exposed drain pad for thermal and electrical connection. The package is leadless with bottom-terminal construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1–3, S | Source | Common return path for channel current; tied to internal substrate; electrically connected to all three source terminals |
| 4, G | Gate | Control electrode; requires ≤ ±20 V bias; low Qgs/Qgd ratio (3 nC / 4.6 nC) minimizes Miller effect |
| 5–8, D | Drain | Main power output terminal; thermally and electrically connected to large exposed copper pad on bottom side |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Process | Enables lower RDS(on) per die area vs. planar MOSFETs, improving power density in compact adapters |
| PWM-Optimized Switching | Low Qg and balanced Qgd/Qgs ratio reduce switching losses and improve duty-cycle linearity in variable-frequency controllers |
| PowerPAK® 1212-8 Package | 1.07 mm profile and exposed drain pad allow integration into ultra-thin power modules and slim wall adapters |
| Halogen-Free & RoHS Compliant | Meets IEC 61249-2-21 and JEDEC JS709A requirements for environmentally constrained industrial and consumer end equipment |
Applications
| AC-DC Adapter Primary Switch | USB-C PD In-Rush Limiter |
|---|---|
Use Scenario: Used in 20–65 W flyback converters powering laptop adapters and monitor power supplies with universal AC input (85–265 VAC). IC Role / Device Role / Timing Role: Primary-side high-side switch handling full mains-referred drain voltage and pulsed current during each switching cycle. Use Value: 100 V rating and 18 mJ EAS withstand unclamped leakage inductance spikes; low RDS(on) reduces no-load standby loss below 75 mW. | Use Scenario: Placed in series with VBUS line of USB-C power delivery ports to limit in-rush current during hot-plug insertion of high-capacitance devices. IC Role / Device Role / Timing Role: Linear-mode current limiter activated by gate-controlled VGS ramp during soft-start phase before full conduction. Use Value: Precise VGS(th) range (2–4.5 V) enables predictable turn-on timing; low thermal resistance prevents thermal runaway during 500-ms in-rush events. |
| Industrial PLC Power Input Stage | LED Driver Bulk Switch |
Use Scenario: Controls 24 V DC input stage in programmable logic controllers, where surge immunity and long-term reliability are critical. IC Role / Device Role / Timing Role: Input protection switch isolating downstream circuitry during overvoltage transients or reverse polarity faults. Use Value: 100 V VDS margin accommodates 48 V system surges; 150 °C max TJ rating ensures operation in sealed enclosures up to 70 °C ambient. | Use Scenario: High-side switch in constant-current LED drivers for commercial lighting, driving strings up to 40 V forward voltage. IC Role / Device Role / Timing Role: PWM-modulated bulk switch synchronizing with current-sense feedback loop for precise dimming control. Use Value: Fast tr/tf (15–25 ns) minimizes dead-time distortion; low Qg reduces gate driver loading in multi-channel synchronized systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7850DP-T1-GE3 | Same PowerPAK 1212-8 package; higher VDS = 150 V; RDS(on) = 0.095 Ω @ 10 V | Better suited for 400 V DC-link or PoE++ applications; higher conduction loss at 100 V operation | Select when system requires >120 V blocking margin or higher avalanche energy (EAS = 32 mJ) |
| IRF7470PBF | SO-8 package; VDS = 100 V; RDS(on) = 0.065 Ω @ 10 V; RthJA = 62 °C/W (higher) | Larger footprint and inferior thermal performance; compatible with legacy SO-8 layouts but less efficient in thermally dense designs | Choose only when board redesign is impractical and thermal budget permits ~2× higher junction temperature rise |
Compared with Si7850DP-T1-GE3 and IRF7470PBF, SI7810DN-T1-GE3 offers optimal balance of 100 V rating, low RDS(on), superior thermal dissipation (RthJC = 1.9 °C/W), and halogen-free compliance - making it preferred for space- and efficiency-critical AC-DC and in-rush limiting roles where 100 V blocking suffices.
Availability
SI7810DN-T1-GE3 is available at Aetrix Electronics and suitable for AC-DC adapters, USB-C power delivery in-rush limiters, and industrial PLC input stages requiring stable component supply, halogen-free compliance, and consistent thermal performance across production volumes.
Supply support for SI7810DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.
The Si78xx family targets high-efficiency, surface-mount power switching in compact AC-DC, DC-DC, and load management applications - designed specifically for thermal performance and PWM fidelity in space-constrained power supplies.
FAQ
What is the maximum continuous drain current for SI7810DN-T1-GE3 at 70 °C ambient?
The SI7810DN-T1-GE3 supports 4.3 A continuous drain current at TA = 70 °C under steady-state conditions on a 1" × 1" FR4 board. This value reflects derating due to increased thermal resistance at elevated ambient temperatures and assumes proper PCB copper pour for heat spreading. The SI7810DN-T1-GE3 datasheet specifies this limit in the Absolute Maximum Ratings table under "Continuous Drain Current (TJ = 150 °C)".
Does SI7810DN-T1-GE3 have integrated gate protection?
No, the SI7810DN-T1-GE3 does not include integrated gate protection diodes or Zener clamps. Its gate-source voltage rating is ±20 V, and designers must ensure external gate drive circuits limit transient overshoot and ESD exposure. Gate leakage (IGSS) is specified at ±100 nA, confirming absence of internal shunt elements. Proper layout and external RC snubbing remain essential for robust operation of SI7810DN-T1-GE3.
Can SI7810DN-T1-GE3 be used in linear mode for hot-swap applications?
Yes, the SI7810DN-T1-GE3 is rated for linear-mode operation in hot-swap and in-rush limiting applications, supported by its 100 V VDS, 150 °C TJ(max), and single-pulse avalanche capability (EAS = 18 mJ). Its SOA curve (documented in Vishay S-81544 Rev. C) confirms safe operation under limited time/energy constraints. Thermal design must account for power dissipation during extended linear conduction phases of SI7810DN-T1-GE3.
What is the recommended reflow profile for SI7810DN-T1-GE3?
Vishay specifies a peak reflow temperature of 260 °C for the SI7810DN-T1-GE3, compliant with IPC/JEDEC J-STD-020 moisture sensitivity level 1. The PowerPAK® 1212-8 package requires adherence to the profile in Vishay document 73257, including controlled ramp rates and soak time to prevent voiding under the exposed drain pad. Manual soldering with an iron is not recommended for SI7810DN-T1-GE3 due to its leadless construction.
Is SI7810DN-T1-GE3 pin-compatible with earlier Si7810DN variants?
Yes, SI7810DN-T1-GE3 shares identical PowerPAK® 1212-8 pinout and mechanical dimensions with Si7810DN-T1-E3 and Si7810DN-T1-RE3. All variants use the same 8-terminal configuration (3×S, 1×G, 4×D) and footprint. The "GE3" suffix denotes halogen-free plating, while electrical and thermal specifications remain unchanged - making SI7810DN-T1-GE3 a direct replacement for prior versions in existing designs.
SI7810DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 62mOhm @ 5.4A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 17 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SI7810DN-T1-GE3 FAQ
1.How can I place an order for SI7810DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7810DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7810DN-T1-GE3 reliable?
The price and inventory of SI7810DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7810DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7810DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7810DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7810DN-T1-GE3?
SI7810DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7810DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7810DN-T1-GE3?
For technical support, including SI7810DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7810DN-T1-GE3 requirements.
6.How does Aetrix verify that SI7810DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7810DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7810DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7810DN-T1-GE3?
All SI7810DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7810DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7810DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7810DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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