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Vishay Siliconix SI7818DN-T1-E3
- Part No.:
- SI7818DN-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SI7818DN-T1-E3.pdf
- Description:
- MOSFET N-CH 150V 2.2A PPAK1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,812
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Product details
Overview
SI7818DN-T1-E3 from Vishay Siliconix is an N-channel 150 V (D-S) TrenchFET® power MOSFET in a PowerPAK® 1212-8 package, optimized for PWM switching with RDS(on) = 0.135 Ω at VGS = 10 V, Qg = 20 nC, and continuous drain current of 3.4 A at TJ = 150 °C - used in primary-side switching circuits requiring compact high-voltage switching.
For engineers reviewing the SI7818DN-T1-E3 datasheet, SI7818DN-T1-E3 pinout, SI7818DN-T1-E3 application, or SI7818DN-T1-E3 equivalent, this page delivers verified electrical parameters, thermal performance data, package layout guidance, and real-world substitution options for high-reliability industrial and power-conversion designs.
Technical Context
This MOSFET employs Vishay's PWM-optimized TrenchFET® process, delivering low gate charge (20 nC typical) and tight RDS(on) distribution (0.112–0.135 Ω at VGS = 10 V, ID = 3.4 A), enabling efficient high-frequency switching in flyback and resonant converters.
It features 100 % Rg testing, avalanche rating (IAS = 9 A, EAS = 4 mJ), and operates across –55 to +150 °C junction temperature range - supported by ultra-low RthJC = 1.9 °C/W and RthJA = 26 °C/W (t ≤ 10 s) in its leadless PowerPAK 1212-8 package.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 150 V - supports primary-side switching in offline AC/DC converters up to 120 VAC mains with safety margin. |
| RDS(on) | 0.135 Ω at VGS = 10 V, ID = 3.4 A - enables <1 W conduction loss at 3.4 A, critical for thermally constrained layouts. |
| Qg | 20 nC typical - reduces gate drive power and switching losses in 100–500 kHz PWM applications. |
| ID (continuous) | 3.4 A at TJ = 150 °C - defines maximum steady-state current under worst-case thermal conditions on standard FR4. |
| RthJC | 1.9 °C/W (max) - allows direct heat transfer from die to PCB copper, supporting >2 W dissipation with minimal ΔT. |
| VGS(th) | 1–3 V - ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers without level-shifting. |
| EAS | 4 mJ - provides robustness against inductive switching transients in non-synchronous rectified topologies. |
Pinout & Package
SI7818DN-T1-E3 uses the PowerPAK® 1212-8 surface-mount package: 3.3 mm × 3.3 mm footprint, 1.05 mm height, leadless construction with exposed drain pad on bottom side for enhanced thermal conduction. The package has eight terminals arranged in two rows of four, with pins 1–4 on one side and 5–8 on the opposite side.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 6, 7, 8 | Drain (D) | Internally connected to large exposed copper pad - primary thermal path and high-current output node. |
| 5 | Gate (G) | Control input - requires low-impedance gate driver due to 20 nC total charge and 1.7 Ω max Rg. |
| - | Source (S) | Terminal 5 is Gate; Source is pin 1 (confirmed via Vishay PowerPAK 1212-8 single-pinout reference drawings and Si7818DN device marking orientation). |
Key Features
| Feature | Design Value |
|---|---|
| PWM-optimized TrenchFET® | Reduces switching losses in high-frequency DC/DC and AC/DC converters by minimizing Qg and Qgd (4.7 nC). |
| 100 % Rg tested | Ensures consistent gate drive timing and eliminates batch-to-batch variation in turn-on/turn-off delays (td(on) = 10 ns typ). |
| Avalanche rated | Withstands repetitive unclamped inductive switching events (IAS = 9 A, EAS = 4 mJ) without degradation - critical for flyback snubberless designs. |
| PowerPAK 1212-8 package | Delivers RthJC = 1.9 °C/W - 20× better thermal performance than TSSOP-8, enabling higher power density in space-constrained boards. |
| Lead (Pb)-free and RoHS-compliant | Meets IPC/JEDEC J-STD-020D reflow profile (peak 240 °C) and supports automated assembly without lead contamination risk. |
Applications
| AC/DC Flyback Converter Primary Switch | DC/DC Synchronous Buck High-Side Switch |
|---|---|
Use Scenario: Used as main switching element in isolated 12–24 W offline flyback converters powering IoT gateways and smart sensors. IC Role / Device Role / Timing Role: N-channel high-voltage switch controlling energy transfer from primary winding during PWM on-time. Use Value: 150 V VDS and 4 mJ EAS eliminate need for external snubbers; 0.135 Ω RDS(on) keeps conduction loss below 1.5 W at full load. |
Use Scenario: High-side switch in 12 V input, 3.3 V/2 A buck converter for FPGA core power in industrial PLCs. IC Role / Device Role / Timing Role: Fast-switching N-MOSFET driven by integrated gate driver, operating at 300 kHz. Use Value: 20 nC Qg and 10 ns td(on) minimize dead-time losses; PowerPAK thermal performance maintains TJ < 105 °C without heatsink. |
| LED Driver Primary-Side Regulation | Motor Control H-Bridge Low-Side Switch |
Use Scenario: Primary-side sensing switch in constant-current LED drivers for street lighting (72–120 W). IC Role / Device Role / Timing Role: Precision-controlled switch enabling accurate current regulation via auxiliary winding feedback. Use Value: Tight VGS(th) (1–3 V) and low RDS(on) tolerance ensure stable regulation across temperature; avalanche rating handles transformer leakage spikes. |
Use Scenario: Low-side switch in 24 V brushed DC motor control for HVAC actuators and valve positioning. IC Role / Device Role / Timing Role: PWM-driven N-MOSFET sinking current from motor windings during active freewheeling. Use Value: 3.4 A continuous current and 0.78 V VSD support efficient body-diode conduction during PWM off-time; RthJA = 26 °C/W sustains operation at 70 °C ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 150 V MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7418DN-T1-E3 | Same PowerPAK 1212-8 package, but lower VDS = 100 V and lower RDS(on) = 0.075 Ω @ 10 V - not rated for 150 V primary-side use. | Suitable only for secondary-side or low-line-input DC/DC; cannot replace SI7818DN-T1-E3 in 120 VAC-derived topologies. | Select only if system VDS stress remains ≤ 80 V and lower RDS(on) justifies derating voltage capability. |
| IRF7478PBF | SO-8 package, VDS = 150 V, RDS(on) = 0.145 Ω @ 10 V, Qg = 22 nC, RthJA = 62 °C/W - larger footprint and 2.4× worse thermal resistance. | Acceptable in legacy SO-8 layouts but requires board redesign for thermal management above 1.2 W. | Choose only when PowerPAK rework is impractical; expect 35 °C higher TJ at same power vs. SI7818DN-T1-E3. |
Compared with SI7818DN-T1-E3, Si7418DN-T1-E3 trades voltage rating for lower on-resistance in identical packaging, while IRF7478PBF offers pin-compatible SO-8 fit but sacrifices thermal efficiency and board area - making SI7818DN-T1-E3 optimal for new designs prioritizing power density and reliability in 150 V switching.
Availability
SI7818DN-T1-E3 is available at Aetrix Electronics and suitable for AC/DC flyback converters, industrial DC/DC regulators, and LED driver primary-side switching requiring stable component supply, long-term lifecycle assurance, and Pb-free compliance.
Supply support for SI7818DN-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency, and miniaturized packaging technologies.
The SI7818DN-T1-E3 belongs to Vishay's TrenchFET® PowerPAK® 1212-8 family, engineered for space-constrained, high-frequency power conversion where thermal performance and voltage robustness are critical.
FAQ
What is the maximum continuous drain current for SI7818DN-T1-E3 at 70 °C ambient?
The SI7818DN-T1-E3 supports 2.7 A continuous drain current at TA = 70 °C (steady-state, FR4 board). This value derives from its 3.4 A rating at 25 °C ambient and thermal derating curve - confirmed in Absolute Maximum Ratings Table on page 1 of Vishay document 73252. Exceeding this current without additional copper pour or airflow risks exceeding TJ = 150 °C.
Does SI7818DN-T1-E3 require a gate resistor for safe operation?
Yes - SI7818DN-T1-E3 benefits from an external gate resistor (typically 2.2–10 Ω) to dampen ringing, control dV/dt, and limit peak gate current during fast switching. Its 20 nC Qg and 1.7 Ω max Rg make it sensitive to parasitic oscillation; Vishay recommends Rg = 6 Ω in dynamic test conditions (document 73252, page 2).
Can SI7818DN-T1-E3 be used in synchronous rectification applications?
No - SI7818DN-T1-E3 is specified as a primary-side N-channel MOSFET with 150 V VDS and no guaranteed reverse-conduction specs beyond diode forward voltage (VSD = 0.78 V). It lacks the low VGS(th) consistency and body-diode Qrr optimization required for secondary-side synchronous rectification.
What is the recommended PCB land pattern for SI7818DN-T1-E3?
Vishay specifies a minimum drain pad of 0.094" × 0.152" (2.39 mm × 3.86 mm) for the PowerPAK 1212-8 single configuration (Application Note 72597). Extending copper beyond 0.3–0.5 in² yields diminishing thermal returns; internal ground/power planes significantly improve RthJA performance.
Is SI7818DN-T1-E3 qualified for automotive applications?
No - SI7818DN-T1-E3 is not AEC-Q101 qualified. While it operates from –55 to +150 °C and meets industrial reliability standards, Vishay does not list it in automotive-grade product families. For automotive primary-side switching, consider AEC-Q101-qualified alternatives like SQJQ412EP.
SI7818DN-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 135mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SI7818DN-T1-E3 FAQ
1.How can I place an order for SI7818DN-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7818DN-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7818DN-T1-E3 reliable?
The price and inventory of SI7818DN-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7818DN-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI7818DN-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7818DN-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7818DN-T1-E3?
SI7818DN-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7818DN-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7818DN-T1-E3?
For technical support, including SI7818DN-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7818DN-T1-E3 requirements.
6.How does Aetrix verify that SI7818DN-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI7818DN-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7818DN-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI7818DN-T1-E3?
All SI7818DN-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7818DN-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7818DN-T1-E3 part is unused and in its original packaging.
Return procedure for SI7818DN-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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