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Vishay Siliconix SI7818DN-T1-GE3
- Part No.:
- SI7818DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® 1212-8
- Datasheet:
-
SI7818DN-T1-GE3.pdf
- Description:
- MOSFET N-CH 150V 2.2A PPAK1212-8
- Quantity:
- Payment:
- Shipping:
Inventory:4,820
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Product details
Overview
SI7818DN-T1-GE3 from Vishay Siliconix is a lead-free and halogen-free N-channel 150 V (D-S) TrenchFET® power MOSFET optimized for PWM switching in primary-side circuits, with RDS(on) = 0.135 Ω at VGS = 10 V, 3.4 A continuous drain current at TA = 25 °C, and 20 nC total gate charge - enabling high-efficiency, space-constrained DC-DC converters.
For engineers reviewing the SI7818DN-T1-GE3 datasheet, SI7818DN-T1-GE3 pinout, SI7818DN-T1-GE3 application, or SI7818DN-T1-GE3 equivalent, key selection criteria include its PowerPAK 1212-8 package thermal performance (RthJA = 65 °C/W steady-state), avalanche-rated construction (EAS = 4 mJ), and gate threshold voltage range (1–3 V) for reliable drive compatibility with 5 V and 3.3 V controllers.
Technical Context
This MOSFET employs Vishay's trench-based silicon process to achieve low on-resistance and fast switching dynamics. Its gate charge profile (Qg = 20 nC, Qgd = 4.7 nC) supports efficient hard-switching operation up to several hundred kHz, while the 150 V VDS rating targets off-line and industrial input stages.
The device integrates a robust body diode (VSD = 0.78 V at IS = 3.2 A) with reverse recovery time trr = 50 ns and Qrr = 100 nC, suitable for synchronous rectification and freewheeling roles where diode conduction occurs during dead-time intervals.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 150 V - supports primary-side switching in 100–120 VAC offline supplies and 48 V industrial bus applications. |
| RDS(on) | 0.135 Ω at VGS = 10 V - enables <1 W conduction loss at 3.4 A, critical for thermally constrained layouts. |
| ID (continuous) | 3.4 A at TA = 25 °C - defines maximum steady-state load current without heatsinking on standard FR4. |
| Qg | 20 nC - determines gate driver power requirement and switching transition time in PWM control loops. |
| VGS(th) | 1–3 V - ensures turn-on compatibility with logic-level drivers and microcontroller GPIOs. |
| EAS | 4 mJ - quantifies single-pulse avalanche energy handling, supporting robustness against inductive switching transients. |
| RthJA | 65 °C/W (steady-state) - reflects thermal resistance from junction to ambient on standard 1" × 1" FR4, guiding board-level thermal design. |
Pinout & Package
SI7818DN-T1-GE3 is housed in the PowerPAK® 1212-8 surface-mount package - a leadless, low-profile (1.05 mm height) construction with exposed drain pad for enhanced thermal conduction to PCB copper. The package footprint (3.30 mm × 3.30 mm) is ~40 % smaller than TSSOP-8 while delivering thermal performance comparable to SO-8.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 6, 7, 8 | Drain (D) | Common high-current output node; electrically and thermally connected to bottom-side exposed copper pad - requires full-solder coverage for optimal thermal dissipation. |
| 5 | Gate (G) | Control terminal; driven by external PWM signal; 100 % Rg tested to ensure consistent switching behavior across production lots. |
| - | Source (S) | Internal connection only; not externally accessible - source is tied to die substrate and forms return path via PCB trace routing adjacent to drain pad. |
Key Features
| Feature | Design Value |
|---|---|
| PWM-optimized TrenchFET® structure | Reduces switching losses and improves efficiency in high-frequency DC-DC topologies such as flyback and forward converters. |
| 100 % Rg tested | Ensures gate resistance consistency (0.8–2.6 Ω), minimizing variation in turn-on/turn-off timing across units. |
| Avalanche rated (IAS = 9 A, EAS = 4 mJ) | Guarantees safe operation under inductive load switching stress without external snubbers in many primary-side designs. |
| PowerPAK 1212-8 package | Delivers RthJC = 1.9 °C/W and RthJA = 65 °C/W - enabling cooler operation than TSOP-6 or TSSOP-8 at same current density. |
| Lead (Pb)-free and halogen-free | Meets RoHS Directive 2011/65/EU and JEDEC JS709B requirements for environmentally compliant manufacturing. |
Applications
| AC-DC Adapter Primary Switch | Industrial DC-DC Converter High-Side Switch |
|---|---|
Use Scenario: Used as main switching element in 15–30 W flyback converters powering consumer electronics from universal AC input. IC Role / Device Role / Timing Role: N-channel high-side switch controlled by PWM controller IC; operates at 65–130 kHz with 50 % duty cycle. Use Value: Low RDS(on) and fast switching minimize conduction and transition losses, improving adapter efficiency to >85 % at full load. |
Use Scenario: Controls power delivery from 24–48 V industrial bus to isolated 5 V/3.3 V auxiliary rails in PLC and HMI modules. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier or high-side switch in active clamp forward topology. Use Value: Avalanche rating and robust body diode support reliable operation during bus transients and short-circuit events. |
| LED Driver Primary-Side Switch | Automotive Body Control Module Load Switch |
Use Scenario: Drives isolated LED strings in commercial lighting systems using quasi-resonant flyback architecture. IC Role / Device Role / Timing Role: Main power switch modulated at variable frequency (60–120 kHz) to regulate LED current. Use Value: Tight VGS(th) distribution (1–3 V) ensures stable turn-on margin with 5 V gate drivers, reducing risk of partial enhancement. |
Use Scenario: Provides protected high-side power switching for solenoids, relays, and sensors in 12 V automotive BCMs. IC Role / Device Role / Timing Role: Load switch with integrated overcurrent and thermal protection enabled by external circuitry. Use Value: PowerPAK 1212-8 package allows compact layout while maintaining junction temperature below 125 °C under 2 A continuous load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 150 V MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7850DP-T1-GE3 | Higher VDS = 200 V; RDS(on) = 0.22 Ω at 10 V; same PowerPAK 1212-8 package. | Better suited for 230 VAC primary-side designs requiring higher breakdown margin. | Select when system input voltage exceeds 150 V RMS or transient immunity >180 V is required. |
| IRF7478PBF | SO-8 package; RDS(on) = 0.14 Ω at 10 V; higher RthJA = 81 °C/W; no avalanche rating. | Larger footprint and lower thermal performance limit usable current in space-constrained designs. | Choose only if legacy SO-8 layout reuse is mandatory and peak power dissipation remains ≤1.2 W. |
Compared with Si7850DP-T1-GE3 and IRF7478PBF, SI7818DN-T1-GE3 offers the optimal balance of 150 V rating, low thermal resistance, and proven avalanche capability in the smallest possible footprint - making it preferred for new designs targeting efficiency, size, and reliability in primary-side switching.
Availability
SI7818DN-T1-GE3 is available at Aetrix Electronics and suitable for AC-DC adapters, industrial DC-DC converters, LED drivers, and automotive body control modules requiring stable component supply, RoHS-compliant sourcing, and long-term production continuity.
Supply support for SI7818DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SI7818DN-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK® family, engineered specifically for high-frequency, high-density power conversion in space- and thermally-constrained applications.
FAQ
What is the maximum continuous drain current for SI7818DN-T1-GE3 at 70 °C ambient temperature?
The SI7818DN-T1-GE3 supports 2.7 A continuous drain current at TA = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits imposed by the PowerPAK 1212-8 package's junction-to-ambient thermal resistance (65 °C/W) and maximum junction temperature of +150 °C. Engineers must verify PCB copper area and airflow to sustain this current reliably in final designs.
Does SI7818DN-T1-GE3 have a specified avalanche energy rating?
Yes, SI7818DN-T1-GE3 is avalanche tested and rated for single-pulse avalanche energy EAS = 4 mJ and single-pulse avalanche current IAS = 9 A (L = 0.1 mH). This rating is confirmed in the Absolute Maximum Ratings section and supports robust operation during inductive switching events without requiring external clamping components in many primary-side configurations.
What is the gate threshold voltage range for SI7818DN-T1-GE3, and how does it affect drive compatibility?
The gate threshold voltage VGS(th) for SI7818DN-T1-GE3 is specified from 1 V to 3 V (min to max) at ID = 250 μA. This range ensures reliable turn-on with standard 3.3 V and 5 V logic-level gate drivers, while avoiding unintended conduction from noise or leakage. The tight distribution supports predictable timing in PWM-controlled topologies without requiring gate voltage boosting.
Can SI7818DN-T1-GE3 be used in synchronous rectification applications?
SI7818DN-T1-GE3 features a body diode with VSD = 0.78 V (typical) at IS = 3.2 A and trr = 50 ns (typical), making it suitable for low-current synchronous rectification in flyback or forward converters. However, its RDS(on) is optimized for primary-side switching rather than secondary-side conduction - for dedicated SR use, Vishay's Si7157DP or Si7842DP offer lower on-resistance and faster diode recovery.
What reflow soldering profile should be used for SI7818DN-T1-GE3?
SI7818DN-T1-GE3 complies with lead-free reflow standards: peak temperature of 240 °C (+5/−0 °C) for 20–40 seconds, with ramp-down rate ≤6 °C/s. The full profile - including preheat (140–170 °C), soak (155 ±15 °C for ≤120 s), and reflow zone (≥180 °C for 70–180 s) - is documented in Vishay's SMD reflow guideline (doc# 73257). Manual soldering with an iron is not recommended due to the leadless PowerPAK construction.
SI7818DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 135mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8
SI7818DN-T1-GE3 FAQ
1.How can I place an order for SI7818DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7818DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7818DN-T1-GE3 reliable?
The price and inventory of SI7818DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7818DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7818DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7818DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7818DN-T1-GE3?
SI7818DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7818DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7818DN-T1-GE3?
For technical support, including SI7818DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7818DN-T1-GE3 requirements.
6.How does Aetrix verify that SI7818DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7818DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7818DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7818DN-T1-GE3?
All SI7818DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7818DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7818DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7818DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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