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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7820DN-T1-GE3

Name: SI7820DN-T1-GE3
Brand: Vishay Siliconix
SKU: SI7820DN-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7820DN-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® 1212-8

Datasheet:: SI7820DN-T1-GE3.pdf

Description:: MOSFET N-CH 200V 1.7A PPAK1212-8

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Product details

Overview

SI7820DN-T1-GE3 from Vishay Siliconix is a N-channel 200 V (D-S) TrenchFET® power MOSFET in PowerPAK® 1212-8 package, with R_DS(on) = 0.240 Ω at V_GS = 10 V, I_D = 2.6 A, Q_g = 12.1 nC, and 100 % R_g tested - optimized for primary-side switching in telecom power supplies.

For engineers reviewing the SI7820DN-T1-GE3 datasheet, SI7820DN-T1-GE3 pinout, SI7820DN-T1-GE3 application, or SI7820DN-T1-GE3 equivalent, key selection criteria include its 200 V V_DS, PWM-optimized gate charge profile, halogen-free and RoHS-compliant construction, and thermal performance enabled by exposed-drain PowerPAK packaging.

Technical Context

This MOSFET employs Vishay's trench-based silicon process to achieve low R_DS(on) and fast switching with controlled Q_g/Q_gd ratio (12.1 nC total, 4.1 nC gate-drain), supporting high-efficiency PWM operation in isolated DC/DC converters. It features fully rated avalanche capability (I_AS = 3.5 A, E_AS = 0.6 mJ) and ±20 V gate drive tolerance.

The PowerPAK® 1212-8 package delivers R_thJC = 1.9 °C/W (typ.) and R_thJA = 26 °C/W (t ≤ 10 s), enabling compact thermal design without heatsinks on FR4 boards. Its leadless construction exposes copper drain pads for direct board-level heat conduction, validated per JEDEC J-STD-020 reflow profile up to 260 °C peak.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - supports primary-side switching in 48 V telecom and 380 V intermediate bus architectures
R_DS(on)	0.240 Ω @ V_GS = 10 V - enables <2.6 A continuous conduction with <1.6 W conduction loss at room temperature
Q_g	12.1 nC - low gate charge reduces driver power and switching losses in high-frequency PWM designs
I_D (T_J = 150 °C)	2.6 A - defines maximum steady-state current under thermal-limited operation on standard PCB
R_thJC	1.9 °C/W (typ.) - allows direct junction-to-PCB thermal path, critical for space-constrained power modules
V_GS(th)	2–4 V - ensures reliable turn-on with standard 5 V or 10 V gate drivers while avoiding spurious conduction
E_AS	0.6 mJ - verified single-pulse avalanche energy supports robustness against inductive switching transients

Pinout & Package

SI7820DN-T1-GE3 uses the PowerPAK® 1212-8 surface-mount package: 3.30 mm × 3.30 mm footprint, 1.05 mm height, leadless construction with exposed copper drain pads on bottom side. The package integrates four drain terminals, one source, and one gate - optimized for low-inductance, high-current routing and PCB thermal conduction.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4 (D)	Drain	Four parallel drain terminals connected to exposed copper pad - provides low-resistance, low-inductance path to PCB ground plane for heat and current
5 (G)	Gate	Single gate input - requires <12.1 nC charge for full enhancement; layout must minimize loop inductance to suppress ringing
6, 7, 8 (S)	Source	Three-source terminals tied internally - establishes reference for gate drive and current sensing; connects to local power ground

Key Features

Feature	Design Value
PWM-optimized TrenchFET® structure	Reduces switching losses via balanced Q_g/Q_gd ratio (12.1 nC / 4.1 nC), enabling >300 kHz operation in telecom SMPS
100 % R_g tested	Guarantees gate resistance between 0.5–3.9 Ω - ensures consistent turn-on timing and driver stage stability
Avalanche rated (I_AS, E_AS)	Withstands 3.5 A single-pulse avalanche current and 0.6 mJ energy - eliminates need for external snubbers in flyback/clamp circuits
Halogen-free & RoHS compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - supports green manufacturing and end-of-life compliance for telecom infrastructure
PowerPAK® 1212-8 thermal design	Delivers R_thJC = 1.9 °C/W (typ.), enabling 2 W dissipation with <4 °C rise above board temperature on 2-layer FR4

Applications

Telecom Power Supplies	Distributed Power Architectures
Use Scenario: Primary-side switch in isolated 48 V input DC/DC converters delivering 12 V/5 V outputs for base station RF modules and control logic. IC Role / Device Role / Timing Role: High-voltage N-channel switching element operating at 200–300 kHz PWM frequency, handling up to 2.6 A peak drain current. Use Value: Low R_DS(on) (0.240 Ω) and fast switching (t_f = 17–30 ns) reduce conduction and transition losses, improving system efficiency by ≥1.2 % over TSSOP-8 alternatives.	Use Scenario: Point-of-load (POL) converter input switch in distributed 380 V intermediate bus systems powering server CPUs and ASICs. IC Role / Device Role / Timing Role: Primary-side MOSFET in forward or active-clamp forward topology, managing high dV/dt stress during hard-switching transitions. Use Value: 200 V rating and 0.6 mJ avalanche energy ensure reliability under bus voltage overshoot and transformer leakage spikes without derating.
Miniature Power Modules	Industrial AC/DC Adapters
Use Scenario: Compact 10–25 W isolated module for medical instrumentation requiring low EMI and minimal board area. IC Role / Device Role / Timing Role: Main switching transistor in flyback converter, operating with tight gate drive timing due to low Q_g (12.1 nC). Use Value: PowerPAK® 1212-8 footprint (3.3 mm × 3.3 mm) saves >40 % board space vs. TSSOP-8 while maintaining thermal performance - critical for sealed enclosures.	Use Scenario: Primary-side switch in universal-input (85–265 VAC) offline adapters for industrial HMIs and PLC I/O modules. IC Role / Device Role / Timing Role: High-voltage switching device handling 650 V reflected transients in discontinuous conduction mode (DCM) flyback. Use Value: Verified avalanche capability (I_AS = 3.5 A) absorbs energy from transformer reset spikes, eliminating need for external clamping diodes or Zener networks.

Telecom Power Supplies

Distributed Power Architectures

Use Scenario: Primary-side switch in isolated 48 V input DC/DC converters delivering 12 V/5 V outputs for base station RF modules and control logic.

IC Role / Device Role / Timing Role: High-voltage N-channel switching element operating at 200–300 kHz PWM frequency, handling up to 2.6 A peak drain current.

Use Value: Low R_DS(on) (0.240 Ω) and fast switching (t_f = 17–30 ns) reduce conduction and transition losses, improving system efficiency by ≥1.2 % over TSSOP-8 alternatives.

Use Scenario: Point-of-load (POL) converter input switch in distributed 380 V intermediate bus systems powering server CPUs and ASICs.

IC Role / Device Role / Timing Role: Primary-side MOSFET in forward or active-clamp forward topology, managing high dV/dt stress during hard-switching transitions.

Use Value: 200 V rating and 0.6 mJ avalanche energy ensure reliability under bus voltage overshoot and transformer leakage spikes without derating.

Miniature Power Modules

Industrial AC/DC Adapters

Use Scenario: Compact 10–25 W isolated module for medical instrumentation requiring low EMI and minimal board area.

IC Role / Device Role / Timing Role: Main switching transistor in flyback converter, operating with tight gate drive timing due to low Q_g (12.1 nC).

Use Value: PowerPAK® 1212-8 footprint (3.3 mm × 3.3 mm) saves >40 % board space vs. TSSOP-8 while maintaining thermal performance - critical for sealed enclosures.

Use Scenario: Primary-side switch in universal-input (85–265 VAC) offline adapters for industrial HMIs and PLC I/O modules.

IC Role / Device Role / Timing Role: High-voltage switching device handling 650 V reflected transients in discontinuous conduction mode (DCM) flyback.

Use Value: Verified avalanche capability (I_AS = 3.5 A) absorbs energy from transformer reset spikes, eliminating need for external clamping diodes or Zener networks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 200 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7850DP-T1-GE3	Higher V_DS (250 V), lower R_DS(on) (0.125 Ω @ 10 V), same PowerPAK 1212-8 package and pinout	Better suited for 400 V bus systems or higher-current designs (>4 A), but with increased gate charge (22.5 nC)	Select when higher voltage margin or lower conduction loss is required; verify driver capability for higher Q_g
IRF6642TRPBF	Same V_DS (200 V), similar R_DS(on) (0.235 Ω), but in DirectFET® MZ package (3.3 mm × 3.3 mm) with different pin assignment	Requires PCB layout revision due to non-identical drain/source terminal mapping; thermal resistance slightly higher (R_thJC = 2.2 °C/W)	Consider only if supply chain diversification is needed; not drop-in - redesign of gate and source routing required

Compared with Si7850DP-T1-GE3, SI7820DN-T1-GE3 offers lower gate charge for faster switching at reduced driver cost; compared with IRF6642TRPBF, it provides identical voltage rating and better thermal resistance but requires no layout change within the PowerPAK family ecosystem.

Availability

SI7820DN-T1-GE3 is available at Aetrix Electronics and suitable for telecom power supplies, distributed power architectures, and miniature power modules requiring stable component supply, halogen-free compliance, and high-reliability primary-side switching.

Supply support for SI7820DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The Si78xxDN series is part of Vishay's TrenchFET® Power MOSFET product line, engineered specifically for high-frequency, high-voltage primary-side switching in space-constrained telecom and industrial power conversion systems.

FAQ

What is the maximum continuous drain current for SI7820DN-T1-GE3 at 70 °C ambient temperature?

The maximum continuous drain current for SI7820DN-T1-GE3 is 2.1 A at T_A = 70 °C (steady-state, mounted on 1" × 1" FR4 board). This value reflects thermal derating due to reduced heat dissipation at elevated ambient temperatures and is specified in the Absolute Maximum Ratings table of the official Vishay datasheet (Document Number: 72581, Rev. E).

Does SI7820DN-T1-GE3 support gate drive voltages below 10 V?

Yes, SI7820DN-T1-GE3 is characterized down to V_GS = 6 V, with R_DS(on) = 0.250 Ω at I_D = 2.5 A. Its gate threshold voltage (V_GS(th)) ranges from 2 V to 4 V, ensuring reliable enhancement with 5 V logic-level drivers - though full-rated current requires ≥6 V gate bias per the datasheet specifications.

Is SI7820DN-T1-GE3 suitable for avalanche-prone circuits like flyback converters?

Yes, SI7820DN-T1-GE3 is 100 % avalanche tested with I_AS = 3.5 A and E_AS = 0.6 mJ, making it suitable for flyback and other inductive-switching topologies where voltage overshoot occurs. This ruggedness eliminates the need for external clamping components in many designs, as confirmed in Vishay's application notes and datasheet Section 5.

What is the thermal resistance from junction to case (R_thJC) for SI7820DN-T1-GE3?

The typical junction-to-case (drain) thermal resistance for SI7820DN-T1-GE3 is 1.9 °C/W, with a maximum of 2.4 °C/W, measured under steady-state conditions. This low value is enabled by the exposed-copper drain pad in the PowerPAK® 1212-8 package and is critical for thermal management in compact power modules.

How does the PowerPAK® 1212-8 package of SI7820DN-T1-GE3 compare thermally to SO-8 or TSSOP-8 packages?

SI7820DN-T1-GE3's PowerPAK® 1212-8 delivers R_thJC = 1.9 °C/W (typ.), which is ~10× better than standard TSSOP-8 (~20 °C/W) and ~10× better than SO-8 (~20 °C/W). Its footprint is also >40 % smaller than TSSOP-8 while maintaining superior thermal conduction - verified in Vishay Application Note AN822 using standardized 2" × 2" four-layer FR4 test boards.

SI7820DN-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® 1212-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 1.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 240mOhm @ 2.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® 1212-8

SI7820DN-T1-GE3 FAQ

1.How can I place an order for SI7820DN-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7820DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7820DN-T1-GE3 reliable?

The price and inventory of SI7820DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7820DN-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI7820DN-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7820DN-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7820DN-T1-GE3?

SI7820DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7820DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7820DN-T1-GE3?

For technical support, including SI7820DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7820DN-T1-GE3 requirements.

6.How does Aetrix verify that SI7820DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI7820DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7820DN-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI7820DN-T1-GE3?

All SI7820DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7820DN-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7820DN-T1-GE3 part is unused and in its original packaging.

Return procedure for SI7820DN-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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