My Inquiry
My Account
Vishay Siliconix SI7846DP-T1-GE3
- Part No.:
- SI7846DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SI7846DP-T1-GE3.pdf
- Description:
- MOSFET N-CH 150V 4A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:1,914
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SI7846DP-T1-GE3 from Vishay Siliconix is a lead-free, halogen-free N-channel 150 V MOSFET in PowerPAK® SO-8 package, delivering 6.7 A continuous drain current at 25 °C, 0.050 Ω RDS(on) at VGS = 10 V, and optimized for fast-switching PWM in high-density DC/DC converters.
For engineers reviewing the SI7846DP-T1-GE3 datasheet, SI7846DP-T1-GE3 pinout, SI7846DP-T1-GE3 application, or SI7846DP-T1-GE3 equivalent, key selection criteria include thermal resistance (RthJC = 1.5 °C/W), avalanche rating (IAS = 25 A), gate charge (Qg = 36 nC), and compatibility with standard SO-8 PCB footprints.
Technical Context
This MOSFET employs TrenchFET® technology to achieve low on-resistance and fast switching dynamics. Its PowerPAK® SO-8 package features an exposed drain pad for direct thermal conduction and matches the SO-8 footprint while offering DPAK-level thermal performance (RthJC = 1.5 °C/W).
The device supports 150 V drain-source blocking, ±20 V gate-source voltage rating, and is 100 % Rg tested. It exhibits 0.75–1.1 V source-drain diode forward voltage at IS = 2.8 A and 40–70 ns reverse recovery time under specified dI/dt conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 150 V - Maximum drain-source voltage; enables use in 48 V telecom/server primary-side switching with margin. |
| RDS(on) | 0.050 Ω @ VGS = 10 V - Low conduction loss at rated current; reduces I²R heating in high-current DC/DC stages. |
| ID (continuous) | 6.7 A @ TA = 25 °C - Sustained output capability on standard FR4; derates to 5.4 A at 70 °C ambient. |
| Qg | 36 nC - Total gate charge; determines driver power requirement and switching speed in PWM circuits. |
| RthJC | 1.5 °C/W (typ.) - Junction-to-case thermal resistance; enables efficient heat transfer to PCB copper or heatsink. |
| VGS(th) | 2.0–4.5 V - Gate threshold range; ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers. |
| IAS | 25 A - Unclamped inductive avalanche current; supports robust operation in flyback or synchronous rectifier topologies. |
Pinout & Package
SI7846DP-T1-GE3 uses the PowerPAK® SO-8 package: 6.15 mm × 5.15 mm footprint, 1.07 mm profile, leadless construction with exposed drain pad on bottom side. Matches standard SO-8 land pattern but requires full-surface soldering of drain terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts 0–10 V drive; 0.2–1.4 Ω gate resistance affects switching edge rate. |
| 2 (S) | Source | Reference node for gate drive; tied to power ground in low-side switch configurations. |
| 3 (S) | Source | Second source connection; paralleled with Pin 2 to reduce source inductance and improve stability. |
| 4 (S) | Source | Third source connection; further lowers source loop inductance in high-frequency switching. |
| 5 (D) | Drain | Main power output terminal; connected to exposed copper pad on package underside for thermal and current path. |
| 6 (D) | Drain | Secondary drain terminal; electrically and thermally tied to Pin 5 and package drain pad. |
| 7 (D) | Drain | Third drain terminal; enhances current sharing and thermal spreading across PCB copper area. |
| 8 (D) | Drain | Fourth drain terminal; completes low-inductance, high-current drain interface to PCB plane. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables 0.050 Ω RDS(on) at 150 V rating-unusual combination for SO-8 footprint, supporting compact high-efficiency designs. |
| PowerPAK® SO-8 package | Delivers 1.5 °C/W RthJC, matching DPAK thermal performance while maintaining SO-8 board layout compatibility. |
| PWM-optimized switching | 36 nC Qg and 12–33 ns propagation delays enable >500 kHz operation in isolated DC/DC converters without excessive driver loss. |
| 100 % Rg tested | Guarantees gate resistance between 0.2–1.4 Ω-critical for consistent turn-on timing and EMI control in parallel configurations. |
| Halogen-free & Pb-free | Complies with IEC 61249-2-21 and RoHS; suitable for industrial and automotive applications requiring green manufacturing compliance. |
Applications
| Telecom/Server 48 V DC/DC | Primary-Side Switch in High-Density SMPS |
|---|---|
|
Use Scenario: Primary-side switching in isolated 48 V input, 12 V output DC/DC modules for data center servers. IC Role / Device Role / Timing Role: N-channel high-side switch in active-clamp forward or LLC resonant topology; handles 6.7 A peak primary current at 300–500 kHz. Use Value: Low RDS(on) minimizes conduction loss; fast switching and low Qg reduce total switching loss, enabling >94 % efficiency in 1U form factor. |
Use Scenario: Main power switch in compact industrial AC/DC adapters with <15 mm height constraint. IC Role / Device Role / Timing Role: Synchronous rectifier or primary FET in flyback converter operating up to 150 V DC link. Use Value: PowerPAK® SO-8's 1.07 mm profile fits ultra-low-profile enclosures; exposed drain pad allows direct thermal coupling to inner-layer copper planes. |
| Industrial 24–42 V Power Supplies | Automotive 42 V Systems |
|
Use Scenario: Input stage switch in programmable logic controller (PLC) power modules accepting 24–48 V DC input. IC Role / Device Role / Timing Role: High-reliability N-channel switch handling surge currents up to 25 A (avalanche-rated) during load dump events. Use Value: 25 A IAS rating provides unclamped inductive energy absorption without external snubbers, reducing BOM count and failure modes. |
Use Scenario: 42 V battery system switch in commercial vehicle auxiliary power units (APUs) and HVAC controls. IC Role / Device Role / Timing Role: Load switch or DC/DC primary FET operating across -40 to +125 °C junction temperature range. Use Value: RDS(on) increases only ~1.5× from 25 °C to 125 °C-stable performance over full automotive temperature range without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 150 V MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7446DP-T1-GE3 | Same PowerPAK® SO-8 package, identical pinout; RDS(on) = 0.041 Ω (typ.) at 10 V, but lower ID = 5.5 A @ 25 °C. | Better conduction loss at light loads; less margin for sustained 6+ A operation in thermally constrained layouts. | Prefer when lowest possible RDS(on) dominates over current headroom; verify thermal design at full load. |
| IRF6642TRPBF | Direct SO-8 footprint; RDS(on) = 0.052 Ω @ 10 V, higher Qg = 42 nC, RthJC = 2.0 °C/W. | Higher switching loss and thermal resistance limit usable frequency and power density vs. SI7846DP-T1-GE3. | Acceptable drop-in replacement where existing IRF6642 layout exists, but expect ~5–8 °C higher junction temp at same power. |
Compared with Si7446DP-T1-GE3, SI7846DP-T1-GE3 trades marginal RDS(on) increase for +1.2 A continuous current headroom; versus IRF6642TRPBF, it delivers measurable thermal and switching efficiency gains without PCB redesign.
Availability
SI7846DP-T1-GE3 is available at Aetrix Electronics and suitable for telecom server power supplies, industrial 42 V systems, and automotive auxiliary power modules requiring stable component supply and long-term lifecycle support.
Supply support for SI7846DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The Si7846DP product line targets high-density, high-efficiency DC/DC conversion in space-constrained environments-designed specifically for telecom, server, and industrial power applications demanding low RDS(on), fast switching, and robust thermal behavior.
FAQ
What is the maximum continuous drain current rating for SI7846DP-T1-GE3 at 70 °C ambient?
The SI7846DP-T1-GE3 supports 5.4 A continuous drain current at TA = 70 °C, per its datasheet absolute maximum ratings table. This value accounts for thermal derating on a standard 1" × 1" FR4 board and assumes adequate PCB copper area for heat spreading. At higher board temperatures or reduced copper, further derating is required to maintain TJ ≤ 150 °C.
Does SI7846DP-T1-GE3 support logic-level gate drive?
Yes, SI7846DP-T1-GE3 has a gate threshold voltage (VGS(th)) range of 2.0–4.5 V, making it compatible with 3.3 V and 5 V logic-level gate drivers. However, full enhancement to its rated RDS(on) of 0.050 Ω requires VGS ≥ 10 V; operation at 5 V yields higher on-resistance and must be verified for specific current and thermal requirements.
Can SI7846DP-T1-GE3 be mounted on a standard SO-8 footprint?
Yes, SI7846DP-T1-GE3 uses the PowerPAK® SO-8 package, which shares identical outline dimensions and pin assignments with standard SO-8. Its drain terminals align with SO-8 pins 5–8, and source/gate match pins 2–4 and 1 respectively-enabling direct PCB footprint reuse without layout changes.
What is the avalanche energy rating of SI7846DP-T1-GE3?
The SI7846DP-T1-GE3 is rated for 25 A unclamped inductive avalanche current (IAS) with L = 0.1 mH. While no single-pulse energy (EAS) is explicitly specified, the device is designed to withstand repetitive avalanche events typical in flyback and active-clamp topologies when operated within its safe operating area limits.
Is SI7846DP-T1-GE3 suitable for automotive applications?
Yes, SI7846DP-T1-GE3 is qualified for automotive 42 V systems per its operating junction temperature range (-55 to +150 °C) and robust avalanche rating. It meets halogen-free and Pb-free requirements per IEC 61249-2-21 and RoHS, and is used in commercial vehicle auxiliary power units and HVAC controls where reliability under load dump and thermal cycling is critical.
SI7846DP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 50mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 36 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.9W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SI7846DP-T1-GE3 FAQ
1.How can I place an order for SI7846DP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7846DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7846DP-T1-GE3 reliable?
The price and inventory of SI7846DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7846DP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7846DP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7846DP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7846DP-T1-GE3?
SI7846DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7846DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7846DP-T1-GE3?
For technical support, including SI7846DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7846DP-T1-GE3 requirements.
6.How does Aetrix verify that SI7846DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7846DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7846DP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7846DP-T1-GE3?
All SI7846DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7846DP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7846DP-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7846DP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SI7846DP-T1-GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
