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Vishay Siliconix SI7858ADP-T1-E3
- Part No.:
- SI7858ADP-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SI7858ADP-T1-E3.pdf
- Description:
- MOSFET N-CH 12V 20A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:6,100
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Product details
Overview
SI7858ADP-T1-E3 from Vishay Siliconix is an N-channel 12-V TrenchFET® Power MOSFET in PowerPAK® SO-8 package, delivering RDS(on) = 2.6 mΩ at VGS = 4.5 V, 29 A continuous drain current (TJ = 150 °C), and 54 nC total gate charge - optimized for low-voltage, high-current synchronous rectification in DC/DC converters.
For engineers reviewing the SI7858ADP-T1-E3 datasheet, SI7858ADP-T1-E3 pinout, SI7858ADP-T1-E3 application, or SI7858ADP-T1-E3 equivalent, key selection criteria include its 1.07 mm low-profile PowerPAK SO-8 footprint, 1.0 °C/W typical junction-to-case thermal resistance, and verified 100 % Rg testing for gate drive consistency in high-frequency switching designs.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve ultra-low on-resistance with fast switching dynamics. Its 54 nC total gate charge and 16 nC gate-drain charge support efficient operation at switching frequencies up to 1 MHz in synchronous buck topologies.
The device features a robust 12 V VDS rating with ±8 V gate-source voltage tolerance, 0.95 V typical gate threshold voltage, and integrated body diode with 0.75–1.1 V forward voltage at 2.9 A - enabling reliable reverse recovery performance in hard-switched and resonant converter stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 12 V - supports input/output rails up to 12 V systems without derating, suitable for point-of-load and battery-powered applications. |
| RDS(on) @ 4.5 V | 2.6 mΩ - enables <1 W conduction loss at 20 A, critical for >95 % efficiency in high-current 3.3 V/5 V output stages. |
| ID (continuous) | 29 A @ TJ = 150 °C - defines maximum steady-state current capability under thermally constrained PCB layouts. |
| Qg (total) | 54 nC - determines gate driver power requirement and switching transition time; enables <100 ns turn-off delay with 6 Ω gate resistor. |
| RthJC | 1.0 °C/W (typ.) - provides direct thermal path from die to PCB copper, enabling 2.7 W dissipation with only ~2.7 °C junction-to-foot rise on 105 °C board. |
| VGS(th) | 0.95 V (typ.) - ensures full enhancement with standard 3.3 V logic-level gate drivers, eliminating need for level-shifting circuitry. |
| Ciss | 5700 pF - impacts gate drive loop stability and EMI filter design; requires careful layout to minimize ringing in high-dV/dt environments. |
Pinout & Package
SI7858ADP-T1-E3 uses the PowerPAK® SO-8 package - a leadless, low-profile (1.07 mm) surface-mount variant of the SO-8 footprint with exposed drain pads on the bottom side for enhanced thermal conduction. It shares identical land pattern dimensions with standard SO-8 but replaces leads with solderable copper terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts 0–4.5 V logic-level signals; 1.2 Ω max gate resistance ensures predictable turn-on timing. |
| 2 (S) | Source | Reference node for gate drive and current sensing; tied to power ground in most synchronous rectifier configurations. |
| 3 (S) | Source | Second source connection - paralleled internally to reduce source inductance and improve current sharing in high-di/dt operation. |
| 4 (S) | Source | Third source connection - further lowers common-source inductance, critical for minimizing shoot-through risk in high-frequency sync rectifiers. |
| 5 (D) | Drain | Main power output terminal; electrically connected to large bottom-side copper pad for thermal and current conduction. |
| 6 (D) | Drain | Second drain connection - increases current-carrying capacity and reduces package inductance for improved EMI performance. |
| 7 (D) | Drain | Third drain connection - enhances thermal spreading across PCB copper and supports >20 A RMS current handling. |
| 8 (D) | Drain | Fourth drain connection - completes low-inductance, high-current path to output rail or inductor node. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® silicon process | Enables 2.6 mΩ RDS(on) at 4.5 V in SO-8 footprint - 40 % lower on-resistance than comparable planar MOSFETs in same package. |
| PowerPAK® SO-8 package | 1.07 mm height and exposed drain pad deliver 1.0 °C/W RthJC, matching DPAK thermal performance while retaining SO-8 board compatibility. |
| 100 % Rg tested | Guarantees gate resistance ≤ 1.2 Ω, ensuring consistent gate charge delivery and minimizing timing skew across production lots. |
| Low Qgd/Qg ratio (0.30) | Reduces Miller effect during switching transitions, improving immunity to false turn-on in high-side configurations. |
| Halogen-free option available | Si7858ADP-T1-GE3 variant meets IEC 61249-2-21 requirements - no halogenated flame retardants used in molding compound. |
Applications
| Server VRM Output Stage | USB PD 3.0 Buck Converter |
|---|---|
|
Use Scenario: High-efficiency 3.3 V/20 A output stage in server voltage regulator module with 500 kHz switching frequency. IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET replacing Schottky diode; commutates current during low-side conduction phase. Use Value: 2.6 mΩ RDS(on) cuts conduction loss by 65 % vs. 40 V Schottky, enabling >96 % peak efficiency and reducing heatsink requirements. |
Use Scenario: 5 V to 3.3 V step-down converter in USB-C power delivery adapter supporting 3 A load. IC Role / Device Role / Timing Role: Low-side switch in synchronous buck topology; driven by integrated controller's PWM output. Use Value: 0.95 V VGS(th) ensures full enhancement with 3.3 V gate drive, eliminating external level shifter and saving BOM cost. |
| Industrial PLC I/O Module | Automotive ADAS Camera Power Supply |
|
Use Scenario: 12 V input, 5 V/10 A output DC/DC for programmable logic controller digital I/O banks. IC Role / Device Role / Timing Role: Main power switch in high-current buck regulator; operates at 300 kHz with forced PWM mode. Use Value: 1.0 °C/W RthJC allows 2.7 W dissipation with only 2.7 °C rise above 105 °C board temperature - avoids thermal throttling in sealed enclosures. |
Use Scenario: Compact 12 V to 3.3 V supply for image sensor and ISP in automotive rear-view camera module. IC Role / Device Role / Timing Role: Synchronous rectifier in 2 MHz buck converter; must meet AEC-Q101 stress test requirements. Use Value: Lead (Pb)-free and halogen-free variants (e.g., Si7858ADP-T1-GE3) support automotive qualification; 54 nC Qg enables stable 2 MHz operation with minimal gate drive loss. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR872DP-T1-GE3 | 12 V VDS, 1.8 mΩ RDS(on) @ 4.5 V, 60 A ID, PowerPAK 8x8 package - larger footprint, lower RDS(on), higher Qg (92 nC). | Requires PCB redesign due to 8x8 mm package; suited for >30 A applications where thermal headroom is critical. | Select when higher current (>30 A) and lower conduction loss outweigh board space constraints. |
| IRLML6344TRPBF | 20 V VDS, 28 mΩ RDS(on) @ 4.5 V, 4.3 A ID, SOT-23 package - smaller size, much higher on-resistance, lower current rating. | Only suitable for sub-5 A loads; lacks thermal capacity for synchronous rectifier use in >10 A designs. | Use only in ultra-compact, low-power auxiliary rails where 2.6 mΩ advantage is unnecessary. |
Compared with SI7858ADP-T1-E3, SiR872DP-T1-GE3 offers superior conduction efficiency at high current but demands more PCB area and gate drive power, while IRLML6344TRPBF trades performance for miniaturization - making SI7858ADP-T1-E3 the optimal balance of low RDS(on), SO-8 compatibility, and thermal capability for 10–30 A synchronous rectification.
Availability
SI7858ADP-T1-E3 is available at Aetrix Electronics and suitable for server VRMs, USB PD adapters, industrial PLCs, and automotive ADAS camera power supplies requiring stable component supply, RoHS-compliant sourcing, and long-term production continuity.
Supply support for SI7858ADP-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The Si7858ADP product line delivers high-current, low-voltage N-channel MOSFETs optimized for synchronous rectification in DC/DC converters - designed to replace Schottky diodes and improve efficiency in space-constrained, thermally demanding applications.
FAQ
What is the maximum continuous drain current rating for SI7858ADP-T1-E3 at 70 °C ambient?
The SI7858ADP-T1-E3 supports 23 A continuous drain current at TA = 70 °C with proper PCB copper area and airflow. This value is derived from the absolute maximum ratings table under "Continuous Drain Current (TJ = 150 °C)" and accounts for thermal derating based on junction-to-ambient resistance. The SI7858ADP-T1-E3 maintains safe operation up to its 150 °C maximum junction temperature under these conditions.
Does SI7858ADP-T1-E3 require a gate driver IC for operation at 500 kHz?
SI7858ADP-T1-E3 can be driven directly by microcontroller GPIO or PWM controller outputs with 3.3 V or 5 V logic levels due to its 0.95 V typical gate threshold voltage and 54 nC total gate charge. At 500 kHz, average gate drive power is ~27 mW (Qg × VGS × f), well within capability of standard gate drivers or integrated controller outputs - no dedicated high-current driver is required unless layout introduces significant gate loop inductance.
Is SI7858ADP-T1-E3 pin-compatible with standard SO-8 MOSFETs?
Yes, SI7858ADP-T1-E3 uses the PowerPAK® SO-8 package, which maintains identical footprint, pad layout, and pin numbering (G-S-S-S-D-D-D-D) as standard SO-8. However, it is leadless: terminals are solderable copper pads on the bottom rather than gull-wing leads. Existing SO-8 land patterns are compatible, but reflow profiles must follow Vishay's Pb-free guidelines (peak 255 °C, 30 s dwell) per document 73257.
What is the safe operating area (SOA) limitation for SI7858ADP-T1-E3 in linear mode?
The SI7858ADP-T1-E3 SOA curve (Figure 4, page 4 of datasheet 73164) shows DC operation is limited to VDS ≤ 6 V at 20 A, or VDS ≤ 12 V at ≤4 A, due to RDS(on)-dominated power dissipation. In linear mode, junction temperature must remain ≤150 °C; with RthJA = 50 °C/W (steady state), maximum allowable power is 1.9 W - constraining usable VDS×ID combinations well below datasheet pulsed limits.
How does the PowerPAK® SO-8 package improve thermal performance over standard SO-8 for SI7858ADP-T1-E3?
The SI7858ADP-T1-E3 PowerPAK® SO-8 achieves 1.0 °C/W typical RthJC by exposing the drain pad on the bottom surface and bonding it directly to PCB copper - bypassing leadframe thermal bottlenecks. In contrast, standard SO-8 exhibits ~16 °C/W RthJC. This 16× improvement reduces junction temperature rise by ~40 °C at 2.7 W dissipation, directly preserving RDS(on) and enabling higher sustained current in compact designs.
SI7858ADP-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 2.6mOhm @ 29A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 80 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5700 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.9W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SI7858ADP-T1-E3 FAQ
1.How can I place an order for SI7858ADP-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7858ADP-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7858ADP-T1-E3 reliable?
The price and inventory of SI7858ADP-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7858ADP-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI7858ADP-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7858ADP-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7858ADP-T1-E3?
SI7858ADP-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7858ADP-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7858ADP-T1-E3?
For technical support, including SI7858ADP-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7858ADP-T1-E3 requirements.
6.How does Aetrix verify that SI7858ADP-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI7858ADP-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7858ADP-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI7858ADP-T1-E3?
All SI7858ADP-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7858ADP-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7858ADP-T1-E3 part is unused and in its original packaging.
Return procedure for SI7858ADP-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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