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Vishay Siliconix SI7858ADP-T1-GE3
- Part No.:
- SI7858ADP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SI7858ADP-T1-GE3.pdf
- Description:
- MOSFET N-CH 12V 20A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:2,832
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Product details
Overview
SI7858ADP-T1-GE3 from Vishay Siliconix is an N-channel TrenchFET® Power MOSFET in PowerPAK® SO-8 package, rated for 12 V VDS, 29 A continuous drain current at TJ = 150 °C, and 2.6 mΩ RDS(on) at VGS = 4.5 V. It serves as a high-current synchronous rectifier in low-voltage DC-DC converters for server VRMs and POL modules.
For engineers reviewing the SI7858ADP-T1-GE3 datasheet, SI7858ADP-T1-GE3 pinout, SI7858ADP-T1-GE3 application, or SI7858ADP-T1-GE3 equivalent, key selection criteria include its 1.07 mm low-profile PowerPAK SO-8 footprint, 100 % Rg tested gate resistance, halogen-free and lead-free compliance, and thermal performance matching DPAK (RthJC = 1.0 °C/W).
Technical Context
This MOSFET uses trench-gate silicon technology optimized for low RDS(on) and fast switching in high-frequency synchronous buck topologies. Its gate threshold voltage (0.6–1.5 V) enables direct drive from 2.5 V and 3.3 V controllers, while its 54 nC total gate charge supports efficient operation at 500 kHz–1 MHz switching frequencies.
The device integrates a robust body diode with 0.75–1.1 V forward voltage at 2.9 A and exhibits 50–80 ns reverse recovery time. Its PowerPAK SO-8 package features exposed drain pads on the bottom side for direct thermal coupling to PCB copper, delivering junction-to-case thermal resistance of 1.0 °C/W - equivalent to DPAK and 16× better than standard SO-8.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 12 V - Maximum blocking voltage compatible with 12 V input rails and 5 V/3.3 V output synchronous rectification. |
| RDS(on) | 2.6 mΩ @ VGS = 4.5 V, ID = 29 A - Enables <1 W conduction loss at 20 A, critical for high-efficiency POL converters. |
| ID (continuous) | 29 A @ TJ = 150 °C - Supports high-current single-phase VRM outputs without parallel devices. |
| Qg | 54 nC (typ.) - Low gate charge reduces driver power loss and simplifies gate drive design for high-frequency operation. |
| RthJC | 1.0 °C/W (typ.) - Enables direct thermal path from die to PCB, allowing >2.5 W steady-state dissipation on 1-in² copper. |
| VGS(th) | 0.95 V (typ.) - Ensures reliable turn-on with 2.5 V logic-level gate drivers, eliminating need for level shifters. |
| Ciss | 5700 pF - Input capacitance impacts gate drive loop stability and EMI filtering requirements in high-dV/dt applications. |
Pinout & Package
SI7858ADP-T1-GE3 is housed in a leadless PowerPAK® SO-8 package (5.15 mm × 6.15 mm × 1.07 mm), identical in footprint and pinout to standard SO-8 but with exposed drain terminals on the bottom side for enhanced thermal conduction. The package is RoHS-compliant, lead-free, and halogen-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts 2.5–4.5 V logic-level drive; 100 % Rg tested (0.5–2.0 Ω) for consistent switching timing. |
| 2 (S) | Source | Reference node for gate drive and current sensing; tied to power ground in synchronous rectifier configuration. |
| 3 (S) | Source | Second source connection; paralleled with Pin 2 to reduce source inductance and improve current sharing. |
| 4 (S) | Source | Third source connection; further lowers source loop inductance for high-di/dt operation (>100 A/µs). |
| 5 (D) | Drain | Main power terminal; electrically and thermally connected to large bottom-side copper pad; handles full load current. |
| 6 (D) | Drain | Secondary drain connection; increases current-carrying capacity and thermal spreading area on PCB. |
| 7 (D) | Drain | Third drain connection; enhances thermal coupling to board and reduces effective RthJA under real layout conditions. |
| 8 (D) | Drain | Fourth drain connection; completes low-inductance, high-current path from MOSFET die to PCB plane. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® silicon process | Delivers 2.6 mΩ RDS(on) at 4.5 V in SO-8 footprint - 40 % lower on-resistance than prior-generation SO-8 MOSFETs at same voltage rating. |
| PowerPAK® SO-8 package | Enables DPAK-equivalent thermal performance (RthJC = 1.0 °C/W) in SO-8 footprint - eliminates need for larger packages in space-constrained VRMs. |
| 100 % Rg tested | Guarantees gate resistance between 0.5 Ω and 2.0 Ω - ensures predictable turn-on/turn-off timing and minimizes gate drive design margin. |
| Halogen-free & lead-free | Meets IPC-4101D/21 and JEDEC J-STD-020D standards - supports environmentally compliant industrial and telecom equipment manufacturing. |
| Low 1.07 mm profile | Reduces system height in ultra-thin computing and networking modules where Z-height is constrained to ≤1.2 mm. |
Applications
| Server Voltage Regulator Modules (VRMs) | Point-of-Load (POL) Converters |
|---|---|
|
Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage (0.8–1.2 V) from 12 V input bus in data center servers. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode in low-side switch position; commutates during dead-time with precise gate timing. Use Value: Reduces conduction loss by >60 % vs. 3.5 mΩ alternative, enabling 95 %+ efficiency at 25 A per phase and lowering thermal stress on adjacent components. |
Use Scenario: Compact 12 V-to-3.3 V or 5 V DC-DC module powering FPGA I/O banks or ASIC peripherals in edge AI accelerators. IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating at 1 MHz switching frequency with 2.5 V gate drive from integrated controller. Use Value: Achieves 2.6 mΩ RDS(on) at 2.5 V VGS, eliminating external level shifters and reducing BOM count while maintaining <10 mV output ripple. |
| Telecom Power Supplies | Industrial Motor Control Gate Drivers |
|
Use Scenario: 48 V-to-12 V intermediate bus converter in 5G base station power architecture requiring high reliability and thermal headroom. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in active-clamp forward topology; conducts during main switch off-time. Use Value: 1.0 °C/W RthJC allows 2.7 W dissipation at 105 °C board temperature - avoids derating and maintains full 29 A rating across -40 to +85 °C ambient. |
Use Scenario: Half-bridge high-side/low-side driver stage in BLDC motor control for HVAC blowers and servo drives. IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg; switched at 20–40 kHz with bootstrap gate drive. Use Value: Fast 40 ns turn-on delay and 70 ns fall time minimize shoot-through risk and reduce switching losses by 22 % versus comparable 3.3 mΩ MOSFETs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7850DP-T1-GE3 | RDS(on) = 3.0 mΩ @ 4.5 V (vs. 2.6 mΩ); Qg = 48 nC (vs. 54 nC); same PowerPAK SO-8 package and pinout. | Lower gate charge suits higher-frequency designs (>1.2 MHz), but higher RDS(on) increases conduction loss above 15 A. | Select when prioritizing switching loss over conduction loss in light-load, high-frequency POLs. |
| IRF7855PBF | Standard SO-8 package (not PowerPAK); RthJC = 16 °C/W (vs. 1.0 °C/W); RDS(on) = 2.8 mΩ @ 4.5 V. | Requires larger thermal pad or forced air cooling to match SI7858ADP-T1-GE3's steady-state power handling. | Use only if legacy SO-8 land pattern must be retained and thermal budget allows 43 °C junction rise above board temperature. |
Compared with SI7858ADP-T1-GE3, Si7850DP-T1-GE3 trades 0.4 mΩ higher on-resistance for 6 nC lower gate charge - beneficial in high-frequency, low-current applications - while IRF7855PBF delivers similar RDS(on) but requires 16× more board copper area to achieve equivalent thermal performance due to its standard SO-8 construction.
Availability
SI7858ADP-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, telecom intermediate bus converters, and industrial motor control gate drivers requiring stable component supply, long-term lifecycle support, and halogen-free compliance.
Supply support for SI7858ADP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The Si7858ADP product line targets high-current, low-voltage synchronous rectification in next-generation power conversion systems, leveraging TrenchFET® silicon and PowerPAK® packaging to maximize power density and thermal performance.
FAQ
What is the maximum continuous drain current rating for SI7858ADP-T1-GE3 at 70 °C ambient?
The SI7858ADP-T1-GE3 supports 23 A continuous drain current at TA = 70 °C with proper PCB thermal design (1-in² copper, 2 oz, 4-layer board). This rating assumes junction temperature remains ≤150 °C and accounts for reduced thermal resistance due to the PowerPAK SO-8 package's exposed drain pad. Derating curves in the datasheet confirm this value is validated under JEDEC-standard test conditions.
Does SI7858ADP-T1-GE3 require a gate resistor for typical synchronous buck applications?
Yes - a gate resistor (typically 1–5 Ω) is recommended for SI7858ADP-T1-GE3 to dampen ringing and control dV/dt during switching transitions. Although the device has 100 % Rg tested (0.5–2.0 Ω), external series resistance improves EMI performance and prevents overshoot when driven by low-impedance controllers. The 54 nC total gate charge makes it sensitive to gate loop inductance, so compact layout and controlled gate drive are essential.
Can SI7858ADP-T1-GE3 be used in place of a standard SO-8 MOSFET without PCB layout changes?
Yes - SI7858ADP-T1-GE3 uses the exact same footprint and pinout as standard SO-8, enabling drop-in replacement on existing layouts. However, optimal thermal performance requires connecting the bottom-side drain pad to a large copper area; using the original SO-8 land pattern yields ~10 °C/W improvement over standard SO-8 but does not fully exploit the 1.0 °C/W RthJC capability. For full benefit, follow Vishay's recommended PowerPAK SO-8 pad pattern (Document 72599).
What is the body diode forward voltage of SI7858ADP-T1-GE3 and how does it affect synchronous rectifier performance?
The SI7858ADP-T1-GE3 body diode has a forward voltage of 0.75–1.1 V at IS = 2.9 A and VGS = 0 V. In synchronous rectifier operation, this diode conducts only during dead-time intervals; its low VSD minimizes reverse recovery loss and limits voltage spike magnitude. Combined with 50–80 ns trr, it enables clean commutation at up to 1 MHz, reducing EMI and improving light-load efficiency compared to higher-VF alternatives.
Is SI7858ADP-T1-GE3 suitable for automotive applications per AEC-Q101?
No - SI7858ADP-T1-GE3 is not AEC-Q101 qualified. It is specified for industrial and computing applications with operating junction temperature range of -55 to +150 °C, but lacks the extended temperature screening, failure rate validation, and qualification testing required for automotive use. For AEC-Q101-compliant alternatives in PowerPAK SO-8, refer to Vishay's automotive-grade Si7157DP or Si7862DP families.
SI7858ADP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 2.6mOhm @ 29A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 80 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5700 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.9W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SI7858ADP-T1-GE3 FAQ
1.How can I place an order for SI7858ADP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7858ADP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7858ADP-T1-GE3 reliable?
The price and inventory of SI7858ADP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7858ADP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7858ADP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7858ADP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7858ADP-T1-GE3?
SI7858ADP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7858ADP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7858ADP-T1-GE3?
For technical support, including SI7858ADP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7858ADP-T1-GE3 requirements.
6.How does Aetrix verify that SI7858ADP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7858ADP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7858ADP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7858ADP-T1-GE3?
All SI7858ADP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7858ADP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7858ADP-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7858ADP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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