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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7862ADP-T1-E3

Name: SI7862ADP-T1-E3
Brand: Vishay Siliconix
SKU: SI7862ADP-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7862ADP-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7862ADP-T1-E3.pdf

Description:: MOSFET N-CH 16V 18A PPAK SO-8

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Product details

Overview

SI7862ADP-T1-E3 from Vishay Siliconix is an N-channel 16-V TrenchFET® Power MOSFET in PowerPAK® SO-8 package, delivering 29 A continuous drain current at T_J = 150 °C, 3.3 mΩ R_DS(on) at V_GS = 4.5 V, and 54 nC total gate charge - optimized for high-efficiency synchronous rectification in low-voltage DC/DC converters.

For engineers reviewing the SI7862ADP-T1-E3 datasheet, SI7862ADP-T1-E3 pinout, SI7862ADP-T1-E3 application, or SI7862ADP-T1-E3 equivalent, key selection criteria include its 16-V V_DS, ultra-low on-resistance at 2.5 V drive, thermal performance matching DPAK, lead-free RoHS compliance, and compatibility with standard SO-8 PCB footprints.

Technical Context

This MOSFET uses Vishay's TrenchFET® process to achieve low R_DS(on) at logic-level gate drive (2.5 V rated), enabling direct interface with 3.3 V or 2.5 V controllers without level-shifting. Its 1.0 °C/W typical junction-to-case thermal resistance supports high-current operation with minimal temperature rise when mounted on thermally enhanced PCBs.

The device integrates a robust body diode with 0.75–1.2 V forward voltage at 4.5 A, and features 100% R_g testing for gate resistance consistency. Its 7340 pF input capacitance and 945 pF reverse transfer capacitance support fast switching in high-frequency synchronous buck topologies up to 1 MHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	16 V - Maximum drain-source blocking voltage; suitable for ≤12 V output rails with margin.
R_DS(on) @ V_GS = 4.5 V	3.3 mΩ - Enables <1 W conduction loss at 29 A; critical for high-current, low-voltage synchronous rectifiers.
I_D (continuous, T_J = 150 °C)	29 A - Sustained current capability under worst-case thermal conditions on standard FR4.
Q_g (total gate charge)	54 nC - Determines driver power requirement and switching loss; optimized for 4.5 V gate drive.
R_thJC (typ.)	1.0 °C/W - Thermal path from junction to exposed drain pad; enables DPAK-level cooling on SO-8 footprint.
V_GS(th)	0.6–2.0 V - Guaranteed turn-on with 2.5 V logic; ensures reliable enhancement-mode operation at low drive.
C_iss	7340 pF - Input capacitance affecting gate drive loop stability and Miller effect in hard-switched applications.

Pinout & Package

SI7862ADP-T1-E3 is housed in a leadless PowerPAK® SO-8 package (6.15 mm × 5.15 mm), featuring an exposed drain pad on the bottom for low-thermal-resistance mounting. The package shares the same footprint and pinout as standard SO-8 but replaces leads with copper pads - requiring reflow-compatible land patterns per Vishay AN821 and AN826.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 8	Drain (D)	Four parallel drain terminals connected to internal die and exposed bottom pad; primary current path and thermal conduction path to PCB.
4	Gate (G)	Control terminal; low 0.5–1.1 Ω gate resistance minimizes driver losses and improves switching speed control.
5, 6, 7	Source (S)	Three parallel source terminals tied to source metallization; forms return path for load current and reference for gate drive.

Key Features

Feature	Design Value
TrenchFET® technology	Enables 3.3 mΩ R_DS(on) at 4.5 V drive and 2.5 V logic-level rating - eliminates need for gate drivers in many low-voltage systems.
PowerPAK® SO-8 package	Delivers DPAK-equivalent thermal performance (1.0 °C/W R_thJC) in SO-8 footprint - allows drop-in upgrade of legacy SO-8 designs without layout change.
100% R_g tested	Guarantees gate resistance between 0.5–1.1 Ω - ensures consistent switching timing and driver stress across production lots.
Lead (Pb)-free, RoHS-compliant	Meets JEDEC J-STD-020 reflow profile for Pb-free solder (peak 255 °C); compatible with standard SMT assembly lines.
Low Q_gd/Q_g ratio	12.5 nC / 54 nC ≈ 0.23 - reduces Miller-induced shoot-through risk and improves hard-switching robustness in synchronous buck converters.

Applications

Server VRMs	GPU Power Delivery
Use Scenario: High-current, multiphase buck converter supplying 0.8–1.2 V to CPU/GPU cores with >300 A peak demand. IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating in continuous conduction mode (CCM) at 500 kHz–1 MHz switching frequency. Use Value: 3.3 mΩ R_DS(on) limits conduction loss to <3 W at 30 A, while 1.0 °C/W R_thJC maintains junction temperature ≤125 °C on 4-layer boards with 1 oz copper.	Use Scenario: Point-of-load (POL) regulator on graphics card PCB delivering 0.9–1.1 V to GPU memory and compute units. IC Role / Device Role / Timing Role: High-side or low-side switch in compact, space-constrained 3-phase buck stage with tight thermal envelope. Use Value: PowerPAK® SO-8 footprint enables dense layout; 2.5 V gate rating allows direct drive from PWM controller outputs without level shifters.
Industrial PLC I/O Modules	Telecom DC/DC Converters
Use Scenario: Isolated 12 V-to-3.3 V or 5 V secondary-side synchronous rectification in DIN-rail mounted programmable logic controllers. IC Role / Device Role / Timing Role: Secondary-side MOSFET replacing Schottky diode in forward or active clamp flyback topology. Use Value: 0.75 V V_SD and low R_DS(on) improve efficiency by ≥3% over 40 V Schottky, reducing heat sink requirements in sealed enclosures.	Use Scenario: 48 V input, 12 V output telecom brick with >94% efficiency target and strict thermal derating requirements. IC Role / Device Role / Timing Role: Primary-side high-side switch or secondary-side synchronous rectifier in LLC or phase-shifted full-bridge topology. Use Value: 16 V V_DS provides sufficient margin for 12 V output with transient spikes; 54 nC Q_g balances switching loss and gate drive complexity.

Server VRMs

GPU Power Delivery

Use Scenario: High-current, multiphase buck converter supplying 0.8–1.2 V to CPU/GPU cores with >300 A peak demand.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating in continuous conduction mode (CCM) at 500 kHz–1 MHz switching frequency.

Use Value: 3.3 mΩ R_DS(on) limits conduction loss to <3 W at 30 A, while 1.0 °C/W R_thJC maintains junction temperature ≤125 °C on 4-layer boards with 1 oz copper.

Use Scenario: Point-of-load (POL) regulator on graphics card PCB delivering 0.9–1.1 V to GPU memory and compute units.

IC Role / Device Role / Timing Role: High-side or low-side switch in compact, space-constrained 3-phase buck stage with tight thermal envelope.

Use Value: PowerPAK® SO-8 footprint enables dense layout; 2.5 V gate rating allows direct drive from PWM controller outputs without level shifters.

Industrial PLC I/O Modules

Telecom DC/DC Converters

Use Scenario: Isolated 12 V-to-3.3 V or 5 V secondary-side synchronous rectification in DIN-rail mounted programmable logic controllers.

IC Role / Device Role / Timing Role: Secondary-side MOSFET replacing Schottky diode in forward or active clamp flyback topology.

Use Value: 0.75 V V_SD and low R_DS(on) improve efficiency by ≥3% over 40 V Schottky, reducing heat sink requirements in sealed enclosures.

Use Scenario: 48 V input, 12 V output telecom brick with >94% efficiency target and strict thermal derating requirements.

IC Role / Device Role / Timing Role: Primary-side high-side switch or secondary-side synchronous rectifier in LLC or phase-shifted full-bridge topology.

Use Value: 16 V V_DS provides sufficient margin for 12 V output with transient spikes; 54 nC Q_g balances switching loss and gate drive complexity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7852DP-T1-E3	Same PowerPAK® SO-8 package, but 20 V V_DS, 4.0 mΩ R_DS(on) @ 4.5 V, 25 A I_D.	Suitable for 15 V output rails; slightly higher conduction loss limits max current in thermally constrained designs.	Select when higher V_DS margin is needed without changing footprint or thermal design.
Si7446DP-T1-E3	Same 16 V rating, but 4.5 mΩ R_DS(on) @ 4.5 V, 22 A I_D, and 42 nC Q_g.	Lower gate charge reduces driver losses but higher R_DS(on) increases conduction loss above 15 A.	Prefer for high-frequency, low-current applications where switching loss dominates; avoid for >20 A continuous loads.

Compared with Si7852DP-T1-E3 and Si7446DP-T1-E3, SI7862ADP-T1-E3 delivers the lowest R_DS(on) and highest continuous current in the 16 V PowerPAK® SO-8 family - making it optimal for high-efficiency, high-current synchronous rectification where thermal headroom is limited.

Availability

SI7862ADP-T1-E3 is available at Aetrix Electronics and suitable for server VRMs, GPU power delivery, industrial PLC I/O modules, and telecom DC/DC converters requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for SI7862ADP-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SI7862ADP-T1-E3 belongs to Vishay's TrenchFET® PowerPAK® SO-8 MOSFET product line, engineered specifically for high-current, low-voltage synchronous rectification in computing and communications infrastructure.

FAQ

What is the maximum continuous drain current for SI7862ADP-T1-E3 at 70 °C ambient?

The SI7862ADP-T1-E3 supports 23 A continuous drain current at T_A = 70 °C with proper PCB thermal management (e.g., 1" × 1" FR4 board per datasheet note). This rating assumes steady-state operation and accounts for package thermal resistance and board dissipation capability. Derating applies above this temperature per the datasheet's thermal curves.

Does SI7862ADP-T1-E3 require a gate driver in 3.3 V systems?

No - SI7862ADP-T1-E3 is rated for 2.5 V gate drive and has a gate threshold voltage range of 0.6–2.0 V, enabling direct interface with 3.3 V microcontrollers or PWM controllers without external level shifting. Its low 0.5–1.1 Ω gate resistance further simplifies driver design.

Can SI7862ADP-T1-E3 be mounted on a standard SO-8 land pattern?

Yes - SI7862ADP-T1-E3 uses the same footprint and pinout as standard SO-8, allowing direct replacement on existing layouts. However, optimal thermal performance requires extending the drain pad area per Vishay AN826; using only the minimum SO-8 pad yields ~10 °C/W higher R_thJA than the recommended pattern.

What is the safe operating area (SOA) limitation for SI7862ADP-T1-E3 at DC operation?

At DC, the SI7862ADP-T1-E3 SOA is limited by its 5.4 W maximum power dissipation at T_A = 25 °C and 18 °C/W typical junction-to-ambient thermal resistance. For example, at 20 A, R_DS(on) = 3.3 mΩ yields 1.32 W conduction loss - well within SOA, but ambient temperature rise must be managed to keep T_J ≤ 150 °C.

Is SI7862ADP-T1-E3 halogen-free?

No - SI7862ADP-T1-E3 is lead-free (RoHS-compliant) but not halogen-free. The halogen-free version is the Si7862ADP-T1-GE3, which carries the additional "-GE3" suffix and meets IEC 61249-2-21 requirements for bromine and chlorine content.

SI7862ADP-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 16 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 3mOhm @ 29A, 4.5V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 80 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 7340 pF @ 8 V

FET Feature:: -

Power Dissipation (Max):: 1.9W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7862ADP-T1-E3 FAQ

1.How can I place an order for SI7862ADP-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7862ADP-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7862ADP-T1-E3 reliable?

The price and inventory of SI7862ADP-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7862ADP-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI7862ADP-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7862ADP-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7862ADP-T1-E3?

SI7862ADP-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7862ADP-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7862ADP-T1-E3?

For technical support, including SI7862ADP-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7862ADP-T1-E3 requirements.

6.How does Aetrix verify that SI7862ADP-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI7862ADP-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7862ADP-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI7862ADP-T1-E3?

All SI7862ADP-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7862ADP-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7862ADP-T1-E3 part is unused and in its original packaging.

Return procedure for SI7862ADP-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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