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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7862ADP-T1-GE3

Name: SI7862ADP-T1-GE3
Brand: Vishay Siliconix
SKU: SI7862ADP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7862ADP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7862ADP-T1-GE3.pdf

Description:: MOSFET N-CH 16V 18A PPAK SO-8

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Product details

Overview

SI7862ADP-T1-GE3 from Vishay Siliconix is an N-channel TrenchFET® Power MOSFET optimized for low-voltage synchronous rectification, featuring 16 V V_DS, 3.3 mΩ R_DS(on) at V_GS = 4.5 V, and 29 A continuous drain current at T_A = 25 °C. It uses a lead-free and halogen-free PowerPAK® SO-8 package for high-efficiency DC/DC converters in server VRMs and notebook power stages.

For engineers reviewing the SI7862ADP-T1-GE3 datasheet, SI7862ADP-T1-GE3 pinout, SI7862ADP-T1-GE3 application, or SI7862ADP-T1-GE3 equivalent, key selection criteria include its 2.5 V gate threshold compatibility with low-voltage controllers, 54 nC total gate charge for fast switching, and 1.0 °C/W junction-to-case thermal resistance enabling high-current operation without derating on standard PCB layouts.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve ultra-low on-resistance while maintaining robust gate oxide integrity at ±8 V V_GS. Its 2.5 V rated gate drive enables direct interface with 3.3 V and 2.5 V logic-level controllers, eliminating level-shifting requirements in compact synchronous buck converters.

The device integrates a body diode with 0.75 V forward voltage at 4.5 A and exhibits 80 ns turn-off delay under 6 V V_DD, 6 Ω load conditions - critical for minimizing dead-time losses in high-frequency (>500 kHz) power stages used in modern CPU/GPU VRMs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	16 V - supports input rails up to 12 V with margin for transient spikes in point-of-load converters
R_DS(on)	3.3 mΩ at V_GS = 4.5 V - enables <1 W conduction loss at 29 A, reducing thermal stress in dense power modules
I_D (continuous)	29 A at T_A = 25 °C - delivers high current density in space-constrained 5.15 mm × 6.15 mm footprint
Q_g	54 nC typical - balances switching speed and gate driver power consumption in 300–1000 kHz applications
R_thJC	1.0 °C/W max - allows direct thermal coupling to PCB copper, matching DPAK performance in SO-8 form factor
V_GS(th)	0.6–2.0 V - ensures reliable turn-on with 2.5 V logic controllers and stable operation across -55 to 150 °C junction range
C_iss	7340 pF - defines Miller capacitance impact on gate drive loop stability in high-dV/dt environments

Pinout & Package

SI7862ADP-T1-GE3 uses the PowerPAK® SO-8 package - a leadless, surface-mount variant of the SO-8 outline with exposed drain pads on the bottom side for enhanced thermal conduction. Dimensions: 5.15 mm × 6.15 mm × 1.04 mm height. Compatible with standard SO-8 land patterns but requires extended drain copper for optimal thermal performance.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 8	Drain (D)	Four parallel drain terminals connected to exposed bottom pad - forms primary thermal path to PCB and carries full load current
4	Gate (G)	Single gate input - low 1.1 Ω gate resistance minimizes ringing and simplifies RC snubber design
5, 6, 7	Source (S)	Three-source terminals tied to internal source metallization - reduces source inductance for improved switching efficiency

Key Features

Feature	Design Value
TrenchFET® architecture	Enables 3.3 mΩ R_DS(on) in SO-8 footprint - eliminates need for larger DPAK or TO-252 packages in 12 V input systems
PowerPAK® SO-8 package	Provides 1.0 °C/W R_thJC - achieves DPAK-level thermal performance without layout redesign or board real estate penalty
100 % R_g tested	Guarantees gate resistance ≤1.1 Ω - ensures consistent switching timing and prevents gate oscillation in paralleled configurations
Halogen-free and Pb-free	Meets IPC-J-STD-020 moisture sensitivity level 1 - supports lead-free reflow without baking or special handling
Low Q_gd/Q_g ratio	12.5 nC / 54 nC = 0.23 - improves hard-switching efficiency and reduces EMI generation in high-frequency VRMs

Applications

Server Voltage Regulator Modules (VRMs)	Notebook CPU Power Stages
Use Scenario: High-current, multi-phase buck converter supplying core voltage to Intel Xeon or AMD EPYC processors. IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 300–600 kHz with 2.5 V gate drive from integrated PWM controller. Use Value: 3.3 mΩ R_DS(on) reduces conduction loss by >40 % vs. legacy SO-8 MOSFETs, enabling 95 %+ efficiency at 100 A output with minimal heatsinking.	Use Scenario: Compact dual-phase buck regulator powering mobile CPUs in ultrabooks with strict height constraints (<1.2 mm). IC Role / Device Role / Timing Role: Low-side synchronous rectifier in 12 V input → 0.8–1.2 V output conversion, driven by 3.3 V logic-level controller. Use Value: PowerPAK® SO-8's 1.04 mm profile fits under thin heat pipes; 1.0 °C/W R_thJC maintains T_J < 115 °C at 25 A without forced airflow.
Telecom DC/DC Converters	Industrial PLC Power Supplies
Use Scenario: 48 V input to 3.3/5/12 V isolated intermediate bus converter in 1RU telecom equipment. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp forward topology, operating at 250–500 kHz. Use Value: 0.75 V V_SD body diode forward voltage minimizes reverse-recovery losses during light-load discontinuous conduction mode.	Use Scenario: Non-isolated 24 V input to 5 V/3.3 V power supply for programmable logic controllers in factory automation cabinets. IC Role / Device Role / Timing Role: High-side switch in pre-regulator stage, controlled via optocoupler-isolated gate driver. Use Value: ±8 V V_GS rating withstands gate drive transients in electrically noisy industrial environments; -55 to 150 °C T_J range ensures reliability across ambient temperatures up to 70 °C.

Server Voltage Regulator Modules (VRMs)

Notebook CPU Power Stages

Use Scenario: High-current, multi-phase buck converter supplying core voltage to Intel Xeon or AMD EPYC processors.

IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 300–600 kHz with 2.5 V gate drive from integrated PWM controller.

Use Value: 3.3 mΩ R_DS(on) reduces conduction loss by >40 % vs. legacy SO-8 MOSFETs, enabling 95 %+ efficiency at 100 A output with minimal heatsinking.

Use Scenario: Compact dual-phase buck regulator powering mobile CPUs in ultrabooks with strict height constraints (<1.2 mm).

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in 12 V input → 0.8–1.2 V output conversion, driven by 3.3 V logic-level controller.

Use Value: PowerPAK® SO-8's 1.04 mm profile fits under thin heat pipes; 1.0 °C/W R_thJC maintains T_J < 115 °C at 25 A without forced airflow.

Telecom DC/DC Converters

Industrial PLC Power Supplies

Use Scenario: 48 V input to 3.3/5/12 V isolated intermediate bus converter in 1RU telecom equipment.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp forward topology, operating at 250–500 kHz.

Use Value: 0.75 V V_SD body diode forward voltage minimizes reverse-recovery losses during light-load discontinuous conduction mode.

Use Scenario: Non-isolated 24 V input to 5 V/3.3 V power supply for programmable logic controllers in factory automation cabinets.

IC Role / Device Role / Timing Role: High-side switch in pre-regulator stage, controlled via optocoupler-isolated gate driver.

Use Value: ±8 V V_GS rating withstands gate drive transients in electrically noisy industrial environments; -55 to 150 °C T_J range ensures reliability across ambient temperatures up to 70 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	20 V V_DS, 2.8 mΩ R_DS(on) at 4.5 V, same PowerPAK® SO-8 package	Higher voltage rating suits 15 V input systems; lower R_DS(on) reduces conduction loss by ~15 %	Select when system input exceeds 13.5 V or when maximum efficiency at >30 A is required
IRF7478PBF	20 V V_DS, 4.0 mΩ R_DS(on) at 4.5 V, standard SO-8 package with leads	Lead-based package increases R_thJA to 50 °C/W - requires larger PCB copper area for equivalent thermal performance	Choose only if legacy SO-8 land pattern must be reused without modification and thermal budget permits 15–20 °C higher T_J

Compared with SiR872DP-T1-GE3, SI7862ADP-T1-GE3 offers tighter V_GS(th) distribution (0.6–2.0 V vs. 1.0–2.5 V) for improved gate drive margin in low-voltage control schemes; versus IRF7478PBF, SI7862ADP-T1-GE3 delivers 30 % lower R_thJC and eliminates lead-induced solder joint fatigue risk in high-reliability deployments.

Availability

SI7862ADP-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, notebook CPU power stages, telecom DC/DC converters, and industrial PLC power supplies requiring stable component supply and long-term manufacturing continuity.

Supply support for SI7862ADP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The Si7862ADP product line targets high-efficiency, high-density DC/DC conversion in computing and communications infrastructure, emphasizing low R_DS(on), fast switching, and thermally optimized packaging for next-generation power delivery networks.

FAQ

What is the maximum continuous drain current rating for SI7862ADP-T1-GE3 at 70 °C ambient temperature?

The SI7862ADP-T1-GE3 supports 23 A continuous drain current at T_A = 70 °C, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating due to reduced heat dissipation capability at elevated ambient temperatures and assumes proper PCB copper layout per Vishay Application Note AN821. The SI7862ADP-T1-GE3 maintains this rating without external heatsinking when mounted on a 1" × 1" FR4 board with recommended drain pad area.

Does SI7862ADP-T1-GE3 require a gate resistor for stable operation in high-frequency switching applications?

While the SI7862ADP-T1-GE3 has a guaranteed gate resistance of ≤1.1 Ω, a small external gate resistor (typically 1–5 Ω) is recommended to dampen potential ringing caused by PCB trace inductance and gate driver output impedance. This is especially critical above 500 kHz where the SI7862ADP-T1-GE3's 54 nC Q_g and 945 pF C_rss interact with layout parasitics. The SI7862ADP-T1-GE3 datasheet provides gate drive design guidelines in Figure 12 of Document 73165.

Can SI7862ADP-T1-GE3 be used as a direct replacement for standard SO-8 MOSFETs on existing PCBs?

Yes, the SI7862ADP-T1-GE3 uses the same footprint and pinout as standard SO-8 packages, allowing drop-in replacement on legacy boards. However, its PowerPAK® SO-8 construction places the drain terminals on the bottom side, so the PCB must provide adequate copper area under the device for thermal conduction. The SI7862ADP-T1-GE3 will outperform standard SO-8 MOSFETs thermally but requires verification of solder reflow profile per Vishay document 73257 for lead-free assembly.

What is the safe operating area (SOA) limitation for SI7862ADP-T1-GE3 at DC conditions?

At DC operation, the SI7862ADP-T1-GE3 is limited by its maximum power dissipation of 1.9 W at T_A = 70 °C, corresponding to approximately 14 A at V_DS = 1.5 V or 6 A at V_DS = 5 V, as shown in the SOA curve on page 4 of Document 73165. This limitation arises from thermal saturation rather than avalanche or secondary breakdown. The SI7862ADP-T1-GE3 must be operated within this boundary to prevent junction temperature exceeding 150 °C under steady-state conditions.

How does the body diode performance of SI7862ADP-T1-GE3 affect synchronous rectifier efficiency?

The SI7862ADP-T1-GE3 body diode has a forward voltage of 0.75–1.2 V at 4.5 A, which directly impacts conduction loss during dead-time intervals in synchronous rectification. Its 80–120 ns reverse recovery time (t_rr) minimizes stored charge loss, making the SI7862ADP-T1-GE3 particularly effective in high-frequency, low-duty-cycle applications like multiphase VRMs. For optimal efficiency, gate timing must ensure the SI7862ADP-T1-GE3 turns on before the body diode conducts significantly.

SI7862ADP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 16 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 3mOhm @ 29A, 4.5V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 80 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 7340 pF @ 8 V

FET Feature:: -

Power Dissipation (Max):: 1.9W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7862ADP-T1-GE3 FAQ

1.How can I place an order for SI7862ADP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7862ADP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7862ADP-T1-GE3 reliable?

The price and inventory of SI7862ADP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7862ADP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI7862ADP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7862ADP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7862ADP-T1-GE3?

SI7862ADP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7862ADP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7862ADP-T1-GE3?

For technical support, including SI7862ADP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7862ADP-T1-GE3 requirements.

6.How does Aetrix verify that SI7862ADP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI7862ADP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7862ADP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI7862ADP-T1-GE3?

All SI7862ADP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7862ADP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7862ADP-T1-GE3 part is unused and in its original packaging.

Return procedure for SI7862ADP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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