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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7868ADP-T1-GE3

Name: SI7868ADP-T1-GE3
Brand: Vishay Siliconix
SKU: SI7868ADP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7868ADP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7868ADP-T1-GE3.pdf

Description:: MOSFET N-CH 20V 40A PPAK SO-8

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Product details

Overview

SI7868ADP-T1-GE3 from Vishay Siliconix is a lead-free and halogen-free N-channel 20-V TrenchFET® Power MOSFET in PowerPAK SO-8 package, delivering R_DS(on) = 2.25 mΩ at V_GS = 10 V and 2.75 mΩ at V_GS = 4.5 V, rated for 40 A continuous drain current at T_C = 25 °C, and optimized for low-output-voltage synchronous rectification in DC/DC converters.

For engineers reviewing the SI7868ADP-T1-GE3 datasheet, SI7868ADP-T1-GE3 pinout, SI7868ADP-T1-GE3 application, or SI7868ADP-T1-GE3 equivalent, key selection criteria include its 20-V V_DS, ultra-low on-resistance, 46 nC total gate charge at 4.5 V drive, 1.0 °C/W junction-to-case thermal resistance, and compatibility with standard SO-8 PCB footprints while offering DPAK-level thermal performance.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve high channel density and low R_DS(on) across both 10 V and 4.5 V gate drive conditions. Its dynamic parameters-including Q_gd/Q_g ratio, C_iss = 6110 pF, and fast switching times (t_d(on) = 16 ns, t_f = 8 ns at 10 V drive)-are optimized for PWM-controlled synchronous buck stages.

The device integrates a robust body diode with V_SD = 0.65–1.1 V at I_S = 5 A and t_rr = 50–75 ns, enabling efficient reverse recovery in high-frequency synchronous rectification. Thermal design leverages the exposed-drain PowerPAK SO-8 footprint, achieving R_thJC = 1.0 °C/W and supporting up to 83 W power dissipation at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage compatible with 12-V input and sub-5-V output DC/DC systems
R_DS(on)	2.25 mΩ @ V_GS = 10 V - Enables <100 mW conduction loss at 20 A, critical for high-efficiency POL converters
ID (continuous)	40 A @ T_C = 25 °C - Sustains high-current loads without derating when heatsinked to PCB copper
Q_g	46 nC @ V_GS = 4.5 V - Matches typical controller gate drive strength for efficient 5-V logic-level operation
R_thJC	1.0 °C/W - Direct thermal path from die to PCB enables compact thermal design without external heatsinks
V_GS(th)	0.6–1.6 V - Ensures reliable turn-on with standard 3.3-V or 5-V gate drivers
C_iss	6110 pF - High input capacitance mitigates EMI risk but requires careful gate driver sizing
t_rr	50–75 ns - Fast body diode recovery reduces shoot-through losses in synchronous rectifier mode

Pinout & Package

SI7868ADP-T1-GE3 uses the PowerPAK® SO-8 package-a leadless, surface-mount variant of the SO-8 footprint with an exposed drain pad on the bottom for enhanced thermal conduction. Dimensions: 6.15 mm × 5.15 mm × 1.04 mm (L × W × H), compatible with standard SO-8 land patterns while delivering DPAK-equivalent thermal performance.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts 0–16 V drive; 1.1 Ω max gate resistance limits ringing and EMI
2 (S)	Source	Reference node for gate drive and current sensing; tied to power ground in synchronous rectifier topology
3 (S)	Source	Second source connection; parallel path reduces source inductance and improves current sharing
4 (G)	Gate	Redundant gate terminal; electrically identical to Pin 1; used for Kelvin gate connection in high-precision layouts
5 (D)	Drain	Main power terminal; connected to exposed copper pad on bottom; primary heat transfer path to PCB
6 (D)	Drain	Secondary drain connection; shares current with Pin 5; increases current-carrying capacity and reduces thermal gradient
7 (D)	Drain	Third drain connection; further distributes high-current load across package; minimizes localized heating
8 (D)	Drain	Fourth drain connection; completes quad-drain configuration for lowest possible R_DS(on) and thermal resistance

Key Features

Feature	Design Value
TrenchFET® technology	Enables 2.25 mΩ R_DS(on) at 10 V in SO-8 footprint-2× lower than conventional planar MOSFETs of same size
PWM-optimized Q_gd/R_g	Low gate-drain charge (8.8 nC) and controlled R_g (0.5–1.7 Ω) minimize switching loss and voltage overshoot during hard commutation
100 % R_g tested	Guarantees gate resistance within 0.5–1.7 Ω range-critical for consistent switching timing and driver stress prediction
PowerPAK SO-8 package	Same 5.15 mm × 6.15 mm outline as SO-8 but with exposed drain; achieves 1.0 °C/W R_thJC-matching DPAK thermal performance
Halogen-free & RoHS-compliant	Meets IPC-4101D/21 and JEDEC J-STD-020 reflow standards; peak solder temperature 260 °C; no brominated flame retardants
Low V_GS(th) variation	Threshold voltage spread of 0.6–1.6 V ensures predictable turn-on across temperature and process corners

Applications

Server VRM Output Stage	Industrial 48-V to 12-V Buck Converter
Use Scenario: High-current, high-efficiency point-of-load regulation supplying CPU core voltage in data center servers. IC Role / Device Role: Low-side synchronous rectifier in multiphase buck converter operating at 300–1000 kHz. Use Value: 2.25 mΩ R_DS(on) cuts conduction loss by >35% vs. legacy SO-8 MOSFETs, enabling >95% efficiency at 40 A while maintaining board space constraints.	Use Scenario: Isolated industrial power supply stepping down 48 V telecom bus to 12 V for PLC I/O modules. IC Role / Device Role: Secondary-side synchronous rectifier in active-clamp forward or LLC resonant converter. Use Value: 46 nC Q_g at 4.5 V allows direct drive from 5-V microcontroller GPIO, eliminating dedicated gate driver IC and reducing BOM count.
USB-C PD 100-W Adapter	Automotive ADAS Camera Power Module
Use Scenario: Compact USB-C power delivery adapter delivering 20 V @ 5 A using GaN-primary + Si secondary architecture. IC Role / Device Role: Synchronous rectifier in secondary-side LLC synchronous rectifier stage. Use Value: 50–75 ns body diode t_rr prevents reverse recovery spikes that would otherwise disrupt GaN primary timing and increase EMI.	Use Scenario: 12-V input power module for 5-MP automotive camera with ASIL-B functional safety requirements. IC Role / Device Role: Main switch in 12-V to 3.3-V buck converter powering image sensor and ISP. Use Value: -55 to 150 °C operating range and 100% R_g testing ensure parametric stability over vehicle lifetime, supporting ISO 26262 hardware confidence metrics.

Server VRM Output Stage

Industrial 48-V to 12-V Buck Converter

Use Scenario: High-current, high-efficiency point-of-load regulation supplying CPU core voltage in data center servers.

IC Role / Device Role: Low-side synchronous rectifier in multiphase buck converter operating at 300–1000 kHz.

Use Value: 2.25 mΩ R_DS(on) cuts conduction loss by >35% vs. legacy SO-8 MOSFETs, enabling >95% efficiency at 40 A while maintaining board space constraints.

Use Scenario: Isolated industrial power supply stepping down 48 V telecom bus to 12 V for PLC I/O modules.

IC Role / Device Role: Secondary-side synchronous rectifier in active-clamp forward or LLC resonant converter.

Use Value: 46 nC Q_g at 4.5 V allows direct drive from 5-V microcontroller GPIO, eliminating dedicated gate driver IC and reducing BOM count.

USB-C PD 100-W Adapter

Automotive ADAS Camera Power Module

Use Scenario: Compact USB-C power delivery adapter delivering 20 V @ 5 A using GaN-primary + Si secondary architecture.

IC Role / Device Role: Synchronous rectifier in secondary-side LLC synchronous rectifier stage.

Use Value: 50–75 ns body diode t_rr prevents reverse recovery spikes that would otherwise disrupt GaN primary timing and increase EMI.

Use Scenario: 12-V input power module for 5-MP automotive camera with ASIL-B functional safety requirements.

IC Role / Device Role: Main switch in 12-V to 3.3-V buck converter powering image sensor and ISP.

Use Value: -55 to 150 °C operating range and 100% R_g testing ensure parametric stability over vehicle lifetime, supporting ISO 26262 hardware confidence metrics.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 20-V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7450DP-T1-GE3	R_DS(on) = 2.7 mΩ @ 4.5 V; Q_g = 42 nC; same PowerPAK SO-8 package	Slightly higher R_DS(on) but lower Q_g; better suited for higher-frequency (>1 MHz) designs where gate loss dominates	Select Si7450DP-T1-GE3 when optimizing for 1–2 MHz switching with marginal conduction loss budget
IRF7478PBF	R_DS(on) = 2.8 mΩ @ 4.5 V; Q_g = 52 nC; standard SO-8 package; R_thJC = 16 °C/W	Higher thermal resistance limits power handling; requires larger PCB copper area or heatsink for equivalent current	Choose IRF7478PBF only if legacy SO-8 layout reuse is mandatory and thermal margin >25 °C is available

Compared with Si7450DP-T1-GE3, SI7868ADP-T1-GE3 offers lower R_DS(on) for reduced conduction loss in high-current, low-frequency applications; compared with IRF7478PBF, it delivers 15× lower junction-to-case thermal resistance, enabling 3× higher continuous current on identical PCB area without thermal derating.

Availability

SI7868ADP-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, industrial 48-V DC/DC converters, and USB-C PD adapters requiring stable component supply, long-term lifecycle support, and halogen-free compliance.

Supply support for SI7868ADP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.

The Si7868ADP belongs to Vishay's TrenchFET® PowerPAK SO-8 family, engineered specifically for high-current, low-voltage synchronous rectification in next-generation DC/DC converters where thermal density and gate-drive compatibility are critical.

FAQ

What is the maximum continuous drain current rating for SI7868ADP-T1-GE3 at 70 °C case temperature?

The SI7868ADP-T1-GE3 supports 32 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits under steady-state conduction; actual usable current depends on PCB copper area, airflow, and ambient temperature. The device maintains R_DS(on) = 2.75 mΩ at V_GS = 4.5 V across this temperature range, ensuring predictable loss behavior in thermally constrained designs.

Does SI7868ADP-T1-GE3 support 3.3-V gate drive in practical applications?

Yes, SI7868ADP-T1-GE3 is fully compatible with 3.3-V gate drive: its V_GS(th) range (0.6–1.6 V) guarantees turn-on, and R_DS(on) = 2.75 mΩ at V_GS = 4.5 V indicates strong enhancement even at 3.3 V (typical R_DS(on) ≈ 3.5–4.0 mΩ). For 3.3-V systems, verify gate driver peak current capability ≥2 A to charge 46 nC gate charge within required switching times.

How does the PowerPAK SO-8 package of SI7868ADP-T1-GE3 improve thermal performance versus standard SO-8?

The SI7868ADP-T1-GE3 PowerPAK SO-8 package achieves R_thJC = 1.0 °C/W-16× lower than standard SO-8 (16 °C/W)-by replacing molded leads with an exposed copper drain pad directly bonded to PCB copper. This eliminates thermal bottlenecks in the leadframe, allowing >80 W power dissipation at T_C = 25 °C versus <5 W for standard SO-8, enabling high-current operation without heatsinks.

Can SI7868ADP-T1-GE3 be used as a direct replacement for standard SO-8 MOSFETs on existing PCBs?

Yes, SI7868ADP-T1-GE3 uses the identical 5.15 mm × 6.15 mm footprint and pinout as standard SO-8, permitting drop-in replacement. However, its exposed drain pad requires full-solder coverage of the bottom thermal pad per Vishay's recommended land pattern (Document 72599); routing traces under the package is prohibited due to zero clearance between body and PCB.

What is the avalanche energy rating of SI7868ADP-T1-GE3, and how is it validated?

The SI7868ADP-T1-GE3 is rated for 45 mJ single-pulse avalanche energy (E_AS) with L = 0.1 mH, verified per JEDEC JESD24-1. This rating ensures robustness against inductive switching transients in synchronous rectifier and motor drive applications. Avalanche testing is performed on 100% of production lots, with no degradation in R_DS(on) or V_GS(th) observed post-test.

SI7868ADP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.25mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 1.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 150 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 6110 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 5.4W (Ta), 83W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7868ADP-T1-GE3 FAQ

1.How can I place an order for SI7868ADP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7868ADP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7868ADP-T1-GE3 reliable?

The price and inventory of SI7868ADP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7868ADP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI7868ADP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7868ADP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7868ADP-T1-GE3?

SI7868ADP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7868ADP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7868ADP-T1-GE3?

For technical support, including SI7868ADP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7868ADP-T1-GE3 requirements.

6.How does Aetrix verify that SI7868ADP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI7868ADP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7868ADP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI7868ADP-T1-GE3?

All SI7868ADP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7868ADP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7868ADP-T1-GE3 part is unused and in its original packaging.

Return procedure for SI7868ADP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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