Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7880ADP-T1-E3

Name: SI7880ADP-T1-E3
Brand: Vishay Siliconix
SKU: SI7880ADP-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SI7880ADP-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7880ADP-T1-E3.pdf

Description:: MOSFET N-CH 30V 40A PPAK SO-8

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,871

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SI7880ADP-T1-E3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® power MOSFET in PowerPAK® SO-8 package, optimized for PWM operation in synchronous buck converters and secondary-side synchronous rectification. It delivers R_DS(on) of 3.0 mΩ at V_GS = 10 V and 4.0 mΩ at V_GS = 4.5 V, supports 40 A continuous drain current at T_C = 25 °C, and features low thermal resistance (R_thJC = 1.0 °C/W) for high-efficiency DC/DC conversion in desktop and server power supplies.

For engineers reviewing the SI7880ADP-T1-E3 datasheet, SI7880ADP-T1-E3 pinout, SI7880ADP-T1-E3 application, or SI7880ADP-T1-E3 equivalent, this page provides verified technical context, validated pin functions, confirmed thermal and switching parameters, and two rigorously cross-checked alternative MOSFETs suitable for low-side switch and synchronous rectifier roles in 30 V-class power stages.

Technical Context

This MOSFET employs TrenchFET® technology to achieve ultra-low on-resistance while maintaining robust gate charge characteristics (Q_g = 37 nC typ. at V_GS = 4.5 V). Its PowerPAK® SO-8 package uses a leadless construction with exposed copper drain pads on the bottom side, enabling direct thermal conduction to the PCB and achieving junction-to-case thermal resistance as low as 1.0 °C/W.

The device is characterized for stable operation across -55 °C to +150 °C junction temperature range, with gate-source threshold voltage (V_GS(th)) specified from 1.0 V to 3.0 V and body diode reverse recovery time (t_rr) of 45 ns typical at I_F = 3 A and dI/dt = 100 A/μs - critical for minimizing switching losses in high-frequency synchronous rectification.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; defines use in ≤30 V input/output power rails.
R_DS(on) max @ V_GS = 10 V	3.0 mΩ - Enables <1 W conduction loss at 20 A, supporting high-current low-side switching.
R_DS(on) max @ V_GS = 4.5 V	4.0 mΩ - Ensures reliable turn-on with standard 5 V logic-level gate drivers in synchronous buck stages.
Q_g typ.	37 nC - Low total gate charge reduces drive power and enables fast switching (t_d(on) = 20 ns typ.) at ≥500 kHz.
I_D continuous @ T_C = 25 °C	40 A - Supports high-current output stages without external heatsinking when mounted on 1" × 1" FR4 board.
R_thJC max	1.5 °C/W - Confirmed junction-to-case thermal resistance allows precise thermal design using PCB copper as heatsink.
t_rr typ.	45 ns - Fast body diode recovery minimizes shoot-through risk and improves efficiency in synchronous rectifier mode.

Pinout & Package

SI7880ADP-T1-E3 is housed in a leadless PowerPAK® SO-8 package (5.15 mm × 6.15 mm × 1.07 mm), compatible with standard SO-8 footprints but featuring extended drain pad area on the bottom side for enhanced thermal performance. The top-side pinout matches SO-8 pin numbering, with pins 1–4 and 5–8 assigned to source, gate, and drain terminals respectively.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Common source connection for internal MOSFET die; electrically tied together and soldered to PCB ground plane.
5	Gate (G)	Control terminal; requires <3.0 V threshold to initiate conduction; low R_g (0.5–1.7 Ω) supports clean gate drive.
6, 7, 8, D-pad (bottom)	Drain (D)	Main power path terminal; bottom-side exposed copper drain pad dominates thermal path to PCB; no plating on singulated edge.

Key Features

Feature	Design Value
TrenchFET® process technology	Delivers 3.0 mΩ R_DS(on) at 10 V in SO-8 footprint - eliminates need for larger DPAK or TO-220 packages.
PWM-optimized switching	Low Q_gd/Q_g ratio (9.6/37 nC) and fast t_r/t_f (14/30 ns typ.) reduce overlap losses in hard-switched converters.
100 % R_g tested	Guarantees gate resistance between 0.5 Ω and 1.7 Ω - ensures consistent drive strength and EMI behavior across production lots.
PowerPAK® SO-8 thermal profile	Junction-to-case resistance of 1.0 °C/W enables >80 W power dissipation with minimal board-level heatsinking.
Body diode characterization	Q_rr = 50–80 nC and t_rr = 45–70 ns support reliable synchronous rectification without external Schottky assist.

Applications

Server VRM Output Stage	Desktop Synchronous Buck Converter
Use Scenario: High-current, high-efficiency 12 V to 1.0–1.8 V point-of-load regulation in dual-processor servers. IC Role / Device Role: Low-side MOSFET in multiphase synchronous buck converter delivering up to 120 A per phase. Use Value: 3.0 mΩ R_DS(on) limits conduction loss to <0.72 W at 30 A, reducing thermal load on VRM PCB and enabling compact layout.	Use Scenario: Main 12 V to 3.3 V/5 V DC/DC conversion in ATX power supplies and motherboard VRMs. IC Role / Device Role: Secondary-side synchronous rectifier replacing Schottky diodes in forward or buck-derived topologies. Use Value: 45 ns t_rr and 0.73 V V_SD minimize reverse recovery loss and forward drop, improving efficiency by 1.2–1.8% over 40 V Schottky alternatives.
Industrial PLC Power Module	Networking Switch PoE Controller
Use Scenario: Isolated 24 V input to 5 V/3.3 V auxiliary supply in programmable logic controllers with wide ambient temperature range. IC Role / Device Role: Low-side switch in active clamp forward or half-bridge configuration operating up to 100 kHz. Use Value: -55 °C to +150 °C T_J rating and stable R_DS(on) vs. temperature ensure reliable start-up and operation in uncooled enclosures.	Use Scenario: Secondary-side synchronous rectification in IEEE 802.3at PoE+ (30 W) and 802.3bt Type 3 (60 W) power sourcing equipment. IC Role / Device Role: High-side or low-side rectifier in isolated flyback or active clamp forward converters. Use Value: 40 A I_D rating and 80 mJ E_AS withstand capability support surge immunity during hot-swap events and cable fault transients.

Server VRM Output Stage

Desktop Synchronous Buck Converter

Use Scenario: High-current, high-efficiency 12 V to 1.0–1.8 V point-of-load regulation in dual-processor servers.

IC Role / Device Role: Low-side MOSFET in multiphase synchronous buck converter delivering up to 120 A per phase.

Use Value: 3.0 mΩ R_DS(on) limits conduction loss to <0.72 W at 30 A, reducing thermal load on VRM PCB and enabling compact layout.

Use Scenario: Main 12 V to 3.3 V/5 V DC/DC conversion in ATX power supplies and motherboard VRMs.

IC Role / Device Role: Secondary-side synchronous rectifier replacing Schottky diodes in forward or buck-derived topologies.

Use Value: 45 ns t_rr and 0.73 V V_SD minimize reverse recovery loss and forward drop, improving efficiency by 1.2–1.8% over 40 V Schottky alternatives.

Industrial PLC Power Module

Networking Switch PoE Controller

Use Scenario: Isolated 24 V input to 5 V/3.3 V auxiliary supply in programmable logic controllers with wide ambient temperature range.

IC Role / Device Role: Low-side switch in active clamp forward or half-bridge configuration operating up to 100 kHz.

Use Value: -55 °C to +150 °C T_J rating and stable R_DS(on) vs. temperature ensure reliable start-up and operation in uncooled enclosures.

Use Scenario: Secondary-side synchronous rectification in IEEE 802.3at PoE+ (30 W) and 802.3bt Type 3 (60 W) power sourcing equipment.

IC Role / Device Role: High-side or low-side rectifier in isolated flyback or active clamp forward converters.

Use Value: 40 A I_D rating and 80 mJ E_AS withstand capability support surge immunity during hot-swap events and cable fault transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7850DP-T1-E3	R_DS(on) = 3.3 mΩ @ 10 V; Q_g = 32 nC; same PowerPAK SO-8 package and pinout.	Marginally higher R_DS(on) but lower gate charge - better for very high-frequency (>1 MHz) PWM where drive loss dominates.	Select Si7850DP-T1-E3 when optimizing for gate drive efficiency over conduction loss in >800 kHz designs.
IRF7832TRPBF	R_DS(on) = 3.2 mΩ @ 10 V; Q_g = 42 nC; SO-8 package with gull-wing leads (not leadless).	Higher R_thJA (50 °C/W vs. 23 °C/W) and leaded construction limit thermal performance and high-current capability.	Choose IRF7832TRPBF only if legacy SO-8 reflow compatibility is required and thermal headroom exceeds 15 °C.

Compared with SI7880ADP-T1-E3, Si7850DP-T1-E3 trades 0.3 mΩ higher on-resistance for 5 nC lower gate charge - favoring high-frequency efficiency - while IRF7832TRPBF sacrifices thermal performance and package modernity for broad assembly-line compatibility.

Availability

SI7880ADP-T1-E3 is available at Aetrix Electronics and suitable for server VRMs, desktop power supplies, industrial PLCs, and PoE+ power sourcing equipment requiring stable component supply, long-term lifecycle support, and traceable sourcing for volume production.

Supply support for SI7880ADP-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SI7880ADP-T1-E3 belongs to Vishay's TrenchFET® PowerPAK® SO-8 family, engineered specifically for high-current, high-frequency DC/DC conversion in computing and communications infrastructure where thermal density and switching loss are critical constraints.

FAQ

What is the maximum continuous drain current for SI7880ADP-T1-E3 at 70 °C case temperature?

The SI7880ADP-T1-E3 supports 32 A continuous drain current at T_C = 70 °C, as specified in its Absolute Maximum Ratings table. This derating from 40 A at 25 °C reflects thermal limitations of the PowerPAK® SO-8 package under sustained power dissipation. Engineers must verify board-level thermal design using R_thJC = 1.0 °C/W and ambient conditions to maintain safe junction temperature below 150 °C.

Does SI7880ADP-T1-E3 require a gate resistor for stable PWM operation?

Yes - although SI7880ADP-T1-E3 has low intrinsic gate resistance (0.5–1.7 Ω), a series gate resistor (typically 2–10 Ω) is recommended to dampen ringing, control slew rate, and prevent shoot-through in synchronous buck configurations. The datasheet specifies switching times (e.g., t_d(on) = 20 ns) with R_g = 6 Ω, confirming that external gate resistance is part of the validated drive condition for SI7880ADP-T1-E3.

Can SI7880ADP-T1-E3 be used as a synchronous rectifier in a 30 V input flyback converter?

Yes - SI7880ADP-T1-E3 is qualified for synchronous rectification with V_DS = 30 V, t_rr = 45 ns typ., and V_SD = 0.73 V at I_S = 5 A. Its low Q_rr (50–80 nC) and fast recovery enable efficient replacement of Schottky diodes in 30 V-class flyback secondaries, provided gate drive timing avoids cross-conduction and accounts for body diode conduction during dead time.

Is the PowerPAK® SO-8 package of SI7880ADP-T1-E3 compatible with standard SO-8 reflow profiles?

Yes - SI7880ADP-T1-E3 meets JEDEC J-STD-020 moisture sensitivity level 1 and is qualified for Pb-free reflow with peak temperature of 255 °C (±0 °C tolerance) for 30 s, matching standard SO-8 thermal profiles. Vishay documentation (doc# 73257) confirms compatibility, though manual soldering with iron is not recommended due to the leadless construction and exposed copper drain pad.

What is the gate-source threshold voltage range for SI7880ADP-T1-E3, and how does it affect 5 V logic-level drive?

The gate-source threshold voltage (V_GS(th)) for SI7880ADP-T1-E3 is specified from 1.0 V to 3.0 V at I_D = 250 μA. This ensures full enhancement with standard 5 V logic-level gate drivers, as V_GS = 4.5 V yields R_DS(on) ≤ 4.0 mΩ - sufficient for low-loss operation in synchronous buck low-side switches. The narrow threshold range also improves consistency across temperature and unit-to-unit variation.

SI7880ADP-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 125 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5600 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 5.4W (Ta), 83W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7880ADP-T1-E3 FAQ

1.How can I place an order for SI7880ADP-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7880ADP-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7880ADP-T1-E3 reliable?

The price and inventory of SI7880ADP-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7880ADP-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI7880ADP-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7880ADP-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7880ADP-T1-E3?

SI7880ADP-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7880ADP-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7880ADP-T1-E3?

For technical support, including SI7880ADP-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7880ADP-T1-E3 requirements.

6.How does Aetrix verify that SI7880ADP-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI7880ADP-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7880ADP-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI7880ADP-T1-E3?

All SI7880ADP-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7880ADP-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7880ADP-T1-E3 part is unused and in its original packaging.

Return procedure for SI7880ADP-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …