My Inquiry
My Account
Vishay Siliconix SI7880ADP-T1-GE3
- Part No.:
- SI7880ADP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SO-8
- Datasheet:
-
SI7880ADP-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 40A PPAK SO-8
- Quantity:
- Payment:
- Shipping:
Inventory:5,606
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SI7880ADP-T1-GE3 from Vishay Siliconix is an N-channel 30 V, 40 A TrenchFET® power MOSFET in PowerPAK® SO-8 package, optimized for PWM switching in low-side synchronous buck converters and secondary-side synchronous rectification. It delivers RDS(on) of 3.0 mΩ at VGS = 10 V and 4.0 mΩ at VGS = 4.5 V, with 37 nC total gate charge and 1.07 mm profile for space-constrained DC/DC designs.
For engineers reviewing the SI7880ADP-T1-GE3 datasheet, SI7880ADP-T1-GE3 pinout, SI7880ADP-T1-GE3 application, or SI7880ADP-T1-GE3 equivalent, this page provides verified electrical parameters, thermal performance data, PowerPAK SO-8 land pattern guidance, and validated alternative options for high-efficiency power conversion layouts.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance and fast switching dynamics. Its gate charge profile (Qg = 37 nC typ. at 4.5 V) and low Crss (320 pF) support high-frequency PWM operation up to 1 MHz while minimizing switching losses in synchronous rectifiers and low-side switches.
The device features a thermally enhanced PowerPAK SO-8 package with exposed drain pad, delivering RthJC = 1.0 °C/W (typ.) and RthJA = 18 °C/W (typ., t ≤ 10 s), enabling stable 40 A continuous conduction at TC = 25 °C without external heatsinking in properly designed PCB layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage for 24 V input rails and transient suppression in desktop/server DC/DC converters |
| RDS(on) @ 10 V | 3.0 mΩ max - Enables <1.2 W conduction loss at 20 A, critical for high-current low-side switch efficiency |
| RDS(on) @ 4.5 V | 4.0 mΩ max - Ensures robust turn-on with 5 V gate drivers in synchronous rectifier applications |
| Qg | 37 nC typ. @ 4.5 V - Supports efficient 500 kHz–1 MHz switching with moderate gate drive strength |
| ID (continuous) | 40 A @ TC = 25 °C - Sustains full-rated current in thermally managed buck converter low-side positions |
| RthJC | 1.0 °C/W typ. - Direct die-to-PCB thermal path enables junction temperature tracking within ±2 °C of board temperature |
| VGS(th) | 1.0–3.0 V - Compatible with standard logic-level and microcontroller GPIO gate drive without level shifting |
Pinout & Package
SI7880ADP-T1-GE3 uses the PowerPAK® SO-8 single-channel leadless package (5.15 mm × 6.15 mm × 1.07 mm), with identical footprint and pinout to standard SO-8 but featuring an exposed copper drain pad on the bottom for enhanced thermal conduction. The package is Pb-free and halogen-free per J-STD-609.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching |
| 5, 6, 7, 8 | Drain (D) | Exposed copper drain pad occupies pins 5–8 footprint; requires full-soldered thermal land for RthJC optimization |
| Gate (G) | Control terminal | Pin 1 top-side connection; low 1.1 Ω gate resistance minimizes ringing and supports clean 20 ns rise/fall times |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables 3.0 mΩ RDS(on) at 10 V in SO-8 footprint-equivalent to DPAK thermal performance without larger package |
| PWM-optimized gate charge | 37 nC Qg at 4.5 V balances switching speed and drive loss for 500 kHz–1 MHz synchronous buck stages |
| 100 % Rg tested | Guarantees gate resistance ≤1.7 Ω, ensuring consistent turn-on timing and eliminating need for external gate resistors in most designs |
| Low-profile 1.07 mm height | Enables ultra-thin power modules and laptop VRMs where Z-height is constrained to <1.2 mm |
| PowerPAK SO-8 compatibility | Direct drop-in replacement for standard SO-8 MOSFETs using same land pattern-no PCB redesign required |
Applications
| Desktop CPU VRM Low-Side Switch | Server DDR Memory Buck Converter |
|---|---|
Use Scenario: High-current, high-frequency step-down conversion feeding Intel/AMD CPU cores with dynamic load steps up to 200 A/μs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in dual-phase interleaved buck converter operating at 600–1000 kHz. Use Value: 3.0 mΩ RDS(on) reduces conduction loss by 42% vs. typical 5.2 mΩ SO-8 MOSFETs, improving full-load efficiency by 1.3% at 30 A. |
Use Scenario: Point-of-load regulation for DDR4/DDR5 memory subsystems requiring tight voltage tolerance (<±15 mV) and fast transient response. IC Role / Device Role / Timing Role: Low-side switch in 3-phase 500 kHz buck regulator with integrated controller and ceramic output capacitors. Use Value: 37 nC Qg enables clean 14 ns rise time with 6 Ω gate resistor, supporting <500 ns load-step recovery without overshoot. |
| Industrial PLC Power Supply | Networking ASIC Core Rail |
Use Scenario: 24 V input to 3.3 V/15 A output DC/DC module in programmable logic controller with extended temperature operation. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in isolated forward converter with active clamp reset. Use Value: 4.0 mΩ RDS(on) at 4.5 V ensures reliable turn-on with 5 V gate drive under cold-start conditions down to –40 °C. |
Use Scenario: Core voltage supply (0.8–1.2 V) for multi-core networking SoCs with peak currents >40 A and strict EMI limits. IC Role / Device Role / Timing Role: Low-side switch in multiphase buck converter using digital PWM controller with adaptive dead-time control. Use Value: 1.07 mm profile allows stacking with inductor and controller IC in <6 mm board height, meeting compact OCPM form factor. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR870DP-T1-GE3 | 30 V, 50 A, RDS(on) = 2.3 mΩ @ 10 V, Qg = 48 nC - higher current rating but 30% higher gate charge | Better for >40 A continuous loads; less suitable for 500+ kHz switching due to increased drive loss | Select when board layout allows marginally larger thermal pad and gate driver can support 48 nC Qg |
| IRF7821TRPBF | 30 V, 36 A, RDS(on) = 3.4 mΩ @ 10 V, Qg = 27 nC - lower gate charge but 13% higher RDS(on) and SO-8 (leaded) package | Lower switching loss but higher conduction loss; requires reflow-compatible leaded assembly and has 16 °C/W RthJA | Prefer only if legacy SO-8 tooling must be retained and thermal budget permits 13% higher I²R loss |
Compared with SI7880ADP-T1-GE3, SiR870DP-T1-GE3 offers higher current headroom at the cost of increased gate drive demand, while IRF7821TRPBF trades conduction efficiency for easier gate drive and legacy compatibility-neither is pin-compatible, but both fit similar functional roles in buck converter low-side positions.
Availability
SI7880ADP-T1-GE3 is available at Aetrix Electronics and suitable for desktop CPU VRMs, server memory buck converters, industrial PLC power supplies, and networking ASIC core rails requiring stable component supply across multi-year production cycles.
Supply support for SI7880ADP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The SI7880ADP-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK SO-8 family, engineered specifically for high-current, high-frequency DC/DC conversion in computing and communications infrastructure where thermal density and Z-height are critical constraints.
FAQ
What is the maximum continuous drain current for SI7880ADP-T1-GE3 at 70 °C case temperature?
The SI7880ADP-T1-GE3 supports 32 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerPAK SO-8 package under steady-state conduction, and assumes proper PCB copper area per Vishay Application Note AN821 for optimal heat spreading. At TC = 25 °C, the rating is 40 A.
Does SI7880ADP-T1-GE3 require a heatsink in typical desktop VRM applications?
No, SI7880ADP-T1-GE3 does not require an external heatsink in standard desktop VRM layouts. Its PowerPAK SO-8 package achieves RthJC = 1.0 °C/W (typ.), allowing direct thermal transfer to the PCB ground plane. With ≥1 in² of 2-oz copper on inner layers and a full drain land pattern, junction temperature remains below 105 °C at 30 A continuous, per Vishay thermal characterization data.
Is SI7880ADP-T1-GE3 compatible with standard SO-8 footprints?
Yes, SI7880ADP-T1-GE3 uses the PowerPAK SO-8 package with identical 5.15 mm × 6.15 mm outline and pin assignment as standard SO-8, enabling direct mounting on existing SO-8 land patterns. However, its exposed drain pad requires full-solder coverage of pins 5–8 area for optimal thermal performance-Vishay recommends minimum pad dimensions of 3.91 mm × 4.90 mm per Application Note AN826.
What is the body diode reverse recovery time (trr) of SI7880ADP-T1-GE3?
The SI7880ADP-T1-GE3 body diode reverse recovery time is 45–70 ns (typ./max) at IF = 3 A, dI/dt = 100 A/μs, and TJ = 25 °C, as measured per JEDEC standards. This fast recovery supports efficient synchronous rectification in high-frequency buck converters without significant shoot-through risk during dead-time transitions.
Can SI7880ADP-T1-GE3 be used with 3.3 V gate drive in synchronous rectifier mode?
SI7880ADP-T1-GE3 is not recommended for reliable operation with 3.3 V gate drive. Its gate threshold voltage range is 1.0–3.0 V, but RDS(on) rises sharply below 4.5 V: at VGS = 3.3 V, RDS(on) exceeds 6.5 mΩ (extrapolated from typical curves), increasing conduction loss by >60%. Use only with ≥4.5 V gate drive for synchronous rectifier applications.
SI7880ADP-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SO-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 125 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5600 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5.4W (Ta), 83W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SO-8
SI7880ADP-T1-GE3 FAQ
1.How can I place an order for SI7880ADP-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7880ADP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7880ADP-T1-GE3 reliable?
The price and inventory of SI7880ADP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7880ADP-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7880ADP-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7880ADP-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7880ADP-T1-GE3?
SI7880ADP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7880ADP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7880ADP-T1-GE3?
For technical support, including SI7880ADP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7880ADP-T1-GE3 requirements.
6.How does Aetrix verify that SI7880ADP-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7880ADP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7880ADP-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7880ADP-T1-GE3?
All SI7880ADP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7880ADP-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7880ADP-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7880ADP-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SI7880ADP-T1-GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
