Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7882DP-T1-E3

Name: SI7882DP-T1-E3
Brand: Vishay Siliconix
SKU: SI7882DP-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SI7882DP-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7882DP-T1-E3.pdf

Description:: MOSFET N-CH 12V 13A PPAK SO-8

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,905

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SI7882DP-T1-E3 from Vishay Siliconix is a 12 V, N-channel TrenchFET® Power MOSFET in PowerPAK® SO-8 package, with R_DS(on) = 0.0055 Ω at V_GS = 4.5 V, 17 A continuous drain current, and optimized gate charge (Q_g = 21–30 nC) for 500 kHz PWM synchronous rectification in point-of-load DC/DC converters.

For engineers reviewing the SI7882DP-T1-E3 datasheet, SI7882DP-T1-E3 pinout, SI7882DP-T1-E3 application, or SI7882DP-T1-E3 equivalent, key selection factors include its low thermal resistance (R_thJA = 20–25 °C/W, t ≤ 10 s), 1.07 mm profile, RoHS-compliant lead-free termination, and shoot-through resistant design for synchronous buck converters.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve reduced gate charge and fast switching with low conduction loss. Its threshold voltage (V_GS(th) = 0.6–1.4 V) enables reliable turn-on at 2.5 V drive, while the integrated body diode supports synchronous rectifier operation with V_SD = 0.70–1.1 V at I_S = 2.7 A.

The PowerPAK® SO-8 package features exposed copper drain pads on the bottom side for enhanced thermal performance and uses a leadless construction with four drain terminals, two source terminals, and one gate - all validated for surface-mount reflow per JEDEC J-STD-020.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	12 V - rated for 5 V or 3.3 V bus step-down applications with margin against transient overshoot
R_DS(on) @ 4.5 V	0.0055 Ω - enables <10 mW conduction loss at 17 A, critical for high-efficiency POL converters
Q_g	21–30 nC - optimized for 500 kHz PWM switching with minimal driver power and EMI
I_D (T_J = 150 °C)	22 A - supports high-current synchronous rectification without derating at elevated ambient
R_thJA (t ≤ 10 s)	20–25 °C/W - allows >3 W steady-state dissipation on standard 1" × 1" FR4 board
V_GS(th)	0.6–1.4 V - ensures robust enhancement-mode turn-on with 2.5 V logic-level gate drive
V_SD	0.70–1.1 V - low forward drop improves reverse recovery efficiency in synchronous rectifier mode

Pinout & Package

SI7882DP-T1-E3 is housed in a leadless PowerPAK® SO-8 package (6.15 mm × 5.15 mm, 1.07 mm height) with exposed drain copper on the bottom side. The top-side pinout is standardized: pins 1–3 and 8 are Source (S), pin 4 is Gate (G), and pins 5–7 are Drain (D).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 8	Source (S)	Common source node; dual-source configuration reduces package inductance and improves switching stability
4	Gate (G)	Control input; low R_g (0.8–3.5 Ω) minimizes gate ringing and enables direct microcontroller drive
5, 6, 7	Drain (D)	Power output node; four parallel drain terminals maximize current handling and thermal spreading

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers ultra-low Q_g/R_DS(on) ratio for high-frequency, high-efficiency switching in POL converters
PowerPAK® SO-8 package	1.07 mm profile and exposed drain pad reduce R_thJC to 2.0–2.6 °C/W for improved thermal management
PWM-optimized gate charge	Q_g = 21–30 nC and Q_gd/Q_gs = ~0.76 enable clean 500 kHz transitions with minimal shoot-through risk
100 % R_g tested	Guarantees consistent gate drive timing across production lots, critical for multi-phase synchronous designs
RoHS-compliant, Pb-free	Meets EU Directive 2011/65/EU with SnAgCu solder compatibility and JEDEC-standard reflow profile

Applications

Point-of-Load Synchronous Rectifier	Synchronous Buck Converter
Use Scenario: High-density DC/DC converter stepping down 5 V or 3.3 V bus to sub-1 V core voltage for FPGA or ASIC power rails. IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to minimize conduction loss and improve efficiency above 90 %. Use Value: R_DS(on) = 0.0055 Ω at 4.5 V gate drive reduces rectifier loss by >60 % vs. typical 0.3 V Schottky, enabling cooler operation at 20 A load.	Use Scenario: Dual-phase 12 V input to 1.2 V/40 A output VRM for server CPU power delivery. IC Role / Device Role: High-current, low-R_DS(on) power switch in low-side position with shoot-through immunity. Use Value: Fast turn-off delay (t_d(off) = 82–123 ns) and low Q_gd (3.5 nC) suppress cross-conduction during dead-time transitions.
DC/DC Module Internal Switch	Industrial PLC Power Stage
Use Scenario: Integrated 12 V input, 3.3 V output DC/DC module for embedded control subsystems requiring compact footprint. IC Role / Device Role: Primary switching FET in monolithic or hybrid power stage with integrated controller. Use Value: PowerPAK® SO-8's 1.07 mm height enables stacking with controller ICs under 1.2 mm total stack height, meeting module thickness constraints.	Use Scenario: 24 V industrial bus converter supplying isolated 5 V/3.3 V rails for I/O modules operating in -40 to +85 °C ambient. IC Role / Device Role: Robust, thermally stable MOSFET for continuous-duty 15 A loads with wide temperature range support. Use Value: R_DS(on) drift <15 % from -55 to +150 °C and guaranteed 100 % R_g testing ensure stable timing across full industrial temperature range.

Point-of-Load Synchronous Rectifier

Synchronous Buck Converter

Use Scenario: High-density DC/DC converter stepping down 5 V or 3.3 V bus to sub-1 V core voltage for FPGA or ASIC power rails.

IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to minimize conduction loss and improve efficiency above 90 %.

Use Value: R_DS(on) = 0.0055 Ω at 4.5 V gate drive reduces rectifier loss by >60 % vs. typical 0.3 V Schottky, enabling cooler operation at 20 A load.

Use Scenario: Dual-phase 12 V input to 1.2 V/40 A output VRM for server CPU power delivery.

IC Role / Device Role: High-current, low-R_DS(on) power switch in low-side position with shoot-through immunity.

Use Value: Fast turn-off delay (t_d(off) = 82–123 ns) and low Q_gd (3.5 nC) suppress cross-conduction during dead-time transitions.

DC/DC Module Internal Switch

Industrial PLC Power Stage

Use Scenario: Integrated 12 V input, 3.3 V output DC/DC module for embedded control subsystems requiring compact footprint.

IC Role / Device Role: Primary switching FET in monolithic or hybrid power stage with integrated controller.

Use Value: PowerPAK® SO-8's 1.07 mm height enables stacking with controller ICs under 1.2 mm total stack height, meeting module thickness constraints.

Use Scenario: 24 V industrial bus converter supplying isolated 5 V/3.3 V rails for I/O modules operating in -40 to +85 °C ambient.

IC Role / Device Role: Robust, thermally stable MOSFET for continuous-duty 15 A loads with wide temperature range support.

Use Value: R_DS(on) drift <15 % from -55 to +150 °C and guaranteed 100 % R_g testing ensure stable timing across full industrial temperature range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7821PbF	R_DS(on) = 0.0052 Ω @ 4.5 V, but Q_g = 32 nC and R_thJA = 50 °C/W (steady state); SO-8 package with gull-wing leads	Higher gate drive loss at 500 kHz; less effective thermal dissipation on same PCB area	Prefer when legacy SO-8 footprint and higher V_GS margin (>4.5 V) are required over ultra-low Q_g
DMN2020LSD-13	R_DS(on) = 0.0065 Ω @ 4.5 V, Q_g = 24 nC, but uses SuperSO8 with 0.9 mm height and R_thJA = 22 °C/W (t ≤ 10 s)	Similar switching performance but lower max I_D (16 A vs. 22 A) and no 100 % R_g test guarantee	Prefer when ultra-thin (<0.95 mm) profile is mandatory and 16 A rating suffices

Compared with IRF7821PbF and DMN2020LSD-13, SI7882DP-T1-E3 delivers the lowest combined Q_g/R_DS(on) product and highest pulsed current capability (50 A) in a thermally optimized PowerPAK® package - making it optimal for space-constrained, high-frequency synchronous rectifiers demanding reliability and repeatability.

Availability

SI7882DP-T1-E3 is available at Aetrix Electronics and suitable for point-of-load synchronous rectifiers, industrial DC/DC modules, and PLC power stages requiring stable component supply, RoHS compliance, and consistent thermal performance across production volumes.

Supply support for SI7882DP-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with vertical manufacturing and rigorous reliability qualification.

The Si7882DP series belongs to Vishay's TrenchFET® PowerPAK® portfolio, engineered specifically for high-efficiency, high-frequency DC/DC conversion in space- and thermally constrained applications such as server VRMs and telecom POL modules.

FAQ

What is the maximum continuous drain current for SI7882DP-T1-E3 at 70 °C ambient?

The SI7882DP-T1-E3 supports 18 A continuous drain current at T_A = 70 °C with proper PCB thermal design (1" × 1" FR4). This rating is derived from its R_thJA = 55–65 °C/W (steady state) and P_D = 3.2 W limit, ensuring safe operation without active cooling in most industrial and computing applications. The SI7882DP-T1-E3 maintains this current capability across its full operating temperature range.

Does SI7882DP-T1-E3 require a gate driver IC for 500 kHz operation?

The SI7882DP-T1-E3 can be driven directly by most microcontrollers or PWM controllers with ≥4 mA peak gate drive capability due to its low Q_g (21–30 nC) and R_g = 0.8–3.5 Ω. At 500 kHz, average gate drive power remains below 15 mW, eliminating need for external drivers in low-to-mid power POL converters. The SI7882DP-T1-E3's 100 % R_g test ensures predictable timing without additional characterization.

How does the PowerPAK® SO-8 package of SI7882DP-T1-E3 differ from standard SO-8?

The SI7882DP-T1-E3 uses a leadless PowerPAK® SO-8 with exposed copper drain pads on the bottom side - unlike gull-wing SO-8 - delivering R_thJC = 2.0–2.6 °C/W versus >5 °C/W for standard SO-8. Its 1.07 mm height and dual-source/dual-drain topology reduce parasitic inductance, improving EMI and switching stability. The SI7882DP-T1-E3 requires reflow per JEDEC J-STD-020, not manual soldering.

Is SI7882DP-T1-E3 suitable for synchronous rectification in 3.3 V input buck converters?

Yes - the SI7882DP-T1-E3 is explicitly qualified for 3.3 V BUS step-down applications as a synchronous rectifier. Its V_GS(th) = 0.6–1.4 V ensures full enhancement at 2.5 V gate drive, and R_DS(on) = 0.008 Ω @ 2.5 V enables efficient operation even at low duty cycles. The SI7882DP-T1-E3's low Q_gd also prevents shoot-through in tight dead-time designs common in 3.3 V systems.

What is the avalanche energy rating of SI7882DP-T1-E3 and how is it relevant in practice?

The SI7882DP-T1-E3 has a single-pulse avalanche energy rating (E_AS) of 7.2 mJ and I_AS = 12 A (L = 0.1 mH). This rating validates ruggedness against inductive switching transients in synchronous buck circuits - particularly during startup, overload, or controller fault conditions. While not intended for repetitive avalanche, this margin ensures the SI7882DP-T1-E3 survives typical system-level stress events without failure.

SI7882DP-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 5.5mOhm @ 17A, 4.5V

Vgs(th) (Max) @ Id:: 1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.9W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7882DP-T1-E3 FAQ

1.How can I place an order for SI7882DP-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7882DP-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7882DP-T1-E3 reliable?

The price and inventory of SI7882DP-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7882DP-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI7882DP-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7882DP-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7882DP-T1-E3?

SI7882DP-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7882DP-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7882DP-T1-E3?

For technical support, including SI7882DP-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7882DP-T1-E3 requirements.

6.How does Aetrix verify that SI7882DP-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI7882DP-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7882DP-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI7882DP-T1-E3?

All SI7882DP-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7882DP-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7882DP-T1-E3 part is unused and in its original packaging.

Return procedure for SI7882DP-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …