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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7882DP-T1-GE3

Name: SI7882DP-T1-GE3
Brand: Vishay Siliconix
SKU: SI7882DP-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7882DP-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7882DP-T1-GE3.pdf

Description:: MOSFET N-CH 12V 13A PPAK SO-8

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Product details

Overview

SI7882DP-T1-GE3 from Vishay Siliconix is a 12 V, N-channel TrenchFET® Power MOSFET in PowerPAK® SO-8 package, with R_DS(on) = 0.0055 Ω at V_GS = 4.5 V, 17 A continuous drain current (T_J = 150 °C), and 21 nC total gate charge - optimized for high-frequency synchronous buck converters and point-of-load rectification.

For engineers reviewing the SI7882DP-T1-GE3 datasheet, SI7882DP-T1-GE3 pinout, SI7882DP-T1-GE3 application, or SI7882DP-T1-GE3 equivalent, key selection criteria include low Q_g/R_DS(on) ratio for 500 kHz PWM operation, thermal resistance R_thJA = 25 °C/W (t ≤ 10 s), and halogen-free, lead-free compliance per RoHS.

Technical Context

This MOSFET uses trench-gate silicon technology to achieve fast switching with low conduction loss. Its gate threshold voltage (V_GS(th)) ranges from 0.6 V to 1.4 V, enabling robust turn-on at 2.5 V drive, while its 0.008 Ω R_DS(on) at V_GS = 2.5 V supports efficient operation in low-voltage synchronous rectifiers.

The PowerPAK® SO-8 package features exposed-drain copper pads on the bottom surface for enhanced thermal performance (R_thJC = 2.6 °C/W max), and its leadless construction eliminates solder wicking concerns but requires reflow-only assembly per Vishay's recommended profile (260 °C peak).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	12 V - rated for 5 V or 3.3 V bus step-down topologies with margin against transient overshoot
R_DS(on) @ 4.5 V	0.0055 Ω - enables <10 mW conduction loss at 17 A, critical for high-efficiency POL converters
Q_g	21 nC - optimized for 500 kHz PWM switching with minimal gate drive power requirement
I_D (continuous)	22 A @ T_J = 150 °C - supports high-current density PCB layouts with thermal derating
R_thJA (t ≤ 10 s)	25 °C/W - allows >2 W dissipation under short-pulse conditions without active cooling
V_GS(th)	0.6–1.4 V - ensures reliable enhancement-mode turn-on with standard logic-level drivers

Pinout & Package

SI7882DP-T1-GE3 is housed in a leadless PowerPAK® SO-8 package (6.15 mm × 5.15 mm, 1.07 mm height) with exposed drain terminals on the bottom side for thermal management. The top-side pinout follows standard SO-8 orientation.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; low 3.5 Ω max gate resistance minimizes ringing in high-dI/dt applications
2 (S)	Source	Reference node for gate drive; tied to power ground in synchronous buck high-side configuration
3 (S)	Source	Parallel source connection to reduce package inductance and improve current sharing
4 (G)	Gate	Second gate terminal - internally connected to Pin 1 for reduced gate loop inductance
5–8 (D)	Drain	Four parallel drain terminals with exposed copper bottom pad - primary thermal path to PCB

Key Features

Feature	Design Value
TrenchFET® architecture	Enables ultra-low R_DS(on) and fast switching with minimal Miller capacitance (C_rss = 35 pF typical)
PowerPAK® SO-8 package	Reduces thermal resistance by 40 % vs. standard SO-8; R_thJC = 2.6 °C/W enables compact heatsinking
PWM-optimized Q_g/R_DS(on) ratio	3.8 nC/Ω at 4.5 V - balances switching loss and conduction loss for 500 kHz operation
100 % R_g tested	Ensures consistent gate drive timing across production lots, critical for multi-phase synchronous designs

Applications

Point-of-Load Synchronous Rectifier	Synchronous Buck Converter
Use Scenario: 3.3 V output stage in server VRM delivering up to 40 A per phase with <90 % efficiency. IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to minimize forward voltage drop and conduction loss. Use Value: 0.0055 Ω R_DS(on) cuts rectifier loss by >65 % vs. 0.45 V Schottky at 20 A, directly improving system efficiency.	Use Scenario: High-density DC/DC module for telecom baseband processing requiring 500 kHz switching and tight thermal envelope. IC Role / Device Role: High-side switch in dual-MOSFET buck stage, driven by integrated controller with 2.5 V logic compatibility. Use Value: 0.008 Ω R_DS(on) at 2.5 V gate drive enables full-load operation without external level-shifting circuitry.
Shoot-Thru Resistant Buck Stage	Low-Voltage Motor Drive Half-Bridge
Use Scenario: Industrial PLC power supply where shoot-through immunity prevents catastrophic cross-conduction during dead-time transitions. IC Role / Device Role: Paired with complementary P-channel device in non-overlapping gate drive configuration. Use Value: Fast 42 ns rise time and 123 ns turn-off delay support precise dead-time control down to 20 ns.	Use Scenario: 12 V BLDC driver IC reference design for small appliances requiring <100 mΩ half-bridge R_DS(on). IC Role / Device Role: Low-side switch in half-bridge topology controlling motor phase current via PWM. Use Value: 50 A pulsed drain rating (I_DM) accommodates motor startup surge currents without derating.

Point-of-Load Synchronous Rectifier

Synchronous Buck Converter

Use Scenario: 3.3 V output stage in server VRM delivering up to 40 A per phase with <90 % efficiency.

IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to minimize forward voltage drop and conduction loss.

Use Value: 0.0055 Ω R_DS(on) cuts rectifier loss by >65 % vs. 0.45 V Schottky at 20 A, directly improving system efficiency.

Use Scenario: High-density DC/DC module for telecom baseband processing requiring 500 kHz switching and tight thermal envelope.

IC Role / Device Role: High-side switch in dual-MOSFET buck stage, driven by integrated controller with 2.5 V logic compatibility.

Use Value: 0.008 Ω R_DS(on) at 2.5 V gate drive enables full-load operation without external level-shifting circuitry.

Shoot-Thru Resistant Buck Stage

Low-Voltage Motor Drive Half-Bridge

Use Scenario: Industrial PLC power supply where shoot-through immunity prevents catastrophic cross-conduction during dead-time transitions.

IC Role / Device Role: Paired with complementary P-channel device in non-overlapping gate drive configuration.

Use Value: Fast 42 ns rise time and 123 ns turn-off delay support precise dead-time control down to 20 ns.

Use Scenario: 12 V BLDC driver IC reference design for small appliances requiring <100 mΩ half-bridge R_DS(on).

IC Role / Device Role: Low-side switch in half-bridge topology controlling motor phase current via PWM.

Use Value: 50 A pulsed drain rating (I_DM) accommodates motor startup surge currents without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLML6344TRPBF	R_DS(on) = 0.035 Ω @ 4.5 V; Q_g = 5.2 nC; SOT-23 package; lower current rating (4.3 A)	Better suited for space-constrained, low-power (<5 W) loads due to smaller footprint and lower gate charge	Select when board area is critical and I_D ≤ 4 A; not suitable for 17 A POL rectification
Si7852DP-T1-GE3	Same PowerPAK® SO-8 package; R_DS(on) = 0.0035 Ω @ 4.5 V; higher 30 A I_D; Q_g = 28 nC	Offers lower conduction loss but increased switching loss - optimal for <300 kHz operation where R_DS(on) dominates	Choose for higher-current, lower-frequency designs where thermal margin is tighter than switching speed

Compared with IRLML6344TRPBF and Si7852DP-T1-GE3, SI7882DP-T1-GE3 delivers the best balance of low R_DS(on), moderate Q_g, and 22 A current capability in PowerPAK® SO-8 - making it ideal for 500 kHz, 15–25 A synchronous buck stages where both conduction and switching losses must be minimized.

Availability

SI7882DP-T1-GE3 is available at Aetrix Electronics and suitable for point-of-load power supplies, telecom DC/DC modules, and industrial motor drive half-bridges requiring stable component supply, halogen-free compliance, and repeatable thermal performance.

Supply support for SI7882DP-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal performance, and application-specific optimization.

The Si78xxDP family targets high-efficiency, high-frequency DC/DC conversion - designed specifically for synchronous rectification and low-voltage, high-current switching in computing, telecom, and industrial power systems.

FAQ

What is the maximum continuous drain current rating for SI7882DP-T1-GE3 at 70 °C ambient?

The SI7882DP-T1-GE3 supports 18 A continuous drain current at T_A = 70 °C with proper PCB copper area per Vishay's thermal guidelines. This rating assumes surface mounting on a 1" × 1" FR4 board with minimum 2 oz copper and thermal vias to inner layers. Derating applies above 70 °C ambient per the R_thJA = 65 °C/W steady-state value.

Does SI7882DP-T1-GE3 require a gate driver IC for 500 kHz operation?

SI7882DP-T1-GE3 can be driven directly by most PWM controllers with ≥1 A peak gate drive capability due to its 21 nC Q_g and 3.5 Ω max R_g. At 500 kHz, average gate power is ~10.5 mW - well within the capability of integrated drivers like the TI UCC27524. External drivers are only needed if layout parasitics induce ringing or if faster edge rates are required.

Is SI7882DP-T1-GE3 suitable for use as a high-side switch in a synchronous buck converter?

Yes, SI7882DP-T1-GE3 is commonly used as the high-side switch in synchronous buck converters. Its 0.6–1.4 V V_GS(th) range and 0.0055 Ω R_DS(on) at 4.5 V make it compatible with bootstrap gate drivers operating from 5 V or 12 V rails. For high-side use, ensure gate drive voltage exceeds V_IN + V_GS(th) to maintain enhancement mode operation.

What is the avalanche energy rating of SI7882DP-T1-GE3, and how is it validated?

The SI7882DP-T1-GE3 has a single-pulse avalanche energy rating (E_AS) of 7.2 mJ, measured under L = 0.1 mH with I_AS = 12 A. This rating is validated per JEDEC JESD24-11 using controlled inductive switching tests and is guaranteed by design - not subject to 100 % production testing but confirmed through qualification lot sampling per Vishay's reliability program.

How does the PowerPAK® SO-8 package of SI7882DP-T1-GE3 differ from standard SO-8 in thermal performance?

The PowerPAK® SO-8 package of SI7882DP-T1-GE3 reduces junction-to-case thermal resistance to 2.6 °C/W (max), versus ~5–6 °C/W for standard SO-8, by exposing the drain copper on the bottom surface. This enables direct thermal coupling to the PCB ground plane, lowering R_thJA to 25 °C/W for t ≤ 10 s - a 40 % improvement over conventional SO-8 packages under identical board conditions.

SI7882DP-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 5.5mOhm @ 17A, 4.5V

Vgs(th) (Max) @ Id:: 1.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.9W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7882DP-T1-GE3 FAQ

1.How can I place an order for SI7882DP-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7882DP-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7882DP-T1-GE3 reliable?

The price and inventory of SI7882DP-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7882DP-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI7882DP-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7882DP-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7882DP-T1-GE3?

SI7882DP-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7882DP-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7882DP-T1-GE3?

For technical support, including SI7882DP-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7882DP-T1-GE3 requirements.

6.How does Aetrix verify that SI7882DP-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI7882DP-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7882DP-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI7882DP-T1-GE3?

All SI7882DP-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7882DP-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7882DP-T1-GE3 part is unused and in its original packaging.

Return procedure for SI7882DP-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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