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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI7892BDP-T1-E3

Name: SI7892BDP-T1-E3
Brand: Vishay Siliconix
SKU: SI7892BDP-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI7892BDP-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SO-8

Datasheet:: SI7892BDP-T1-E3.pdf

Description:: MOSFET N-CH 30V 15A PPAK SO-8

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Product details

Overview

SI7892BDP-T1-E3 from Vishay Siliconix is a N-channel 30-V (D-S) TrenchFET® Power MOSFET in PowerPAK® SO-8 package, delivering R_DS(on) = 4.2 mΩ at V_GS = 10 V and 5.7 mΩ at V_GS = 4.5 V, with 25 A continuous drain current (T_J = 150 °C) and 27 nC total gate charge - optimized for high-efficiency synchronous rectification in DC/DC converters.

For engineers reviewing the SI7892BDP-T1-E3 datasheet, SI7892BDP-T1-E3 pinout, SI7892BDP-T1-E3 application, or SI7892BDP-T1-E3 equivalent, key selection criteria include low thermal resistance (R_thJC = 2.1 °C/W), 100% R_g tested gate resistance, and compatibility with standard SO-8 land patterns while offering DPAK-level thermal performance.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve ultra-low on-resistance and fast switching dynamics. Its PowerPAK® SO-8 package features an exposed copper drain pad on the bottom surface, enabling direct thermal conduction to the PCB - reducing junction-to-case thermal resistance to 2.1 °C/W (typical).

The device supports gate drive voltages from 4.5 V to 10 V, with V_GS(th) specified from 1.0 V to 3.0 V and guaranteed 100% R_g testing. It exhibits low output capacitance (C_oss = 630 pF) and reverse transfer capacitance (C_rss = 295 pF) at V_DS = 15 V, supporting high-frequency operation in synchronous buck topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; suitable for 24-V input systems and point-of-load converters.
R_DS(on) @ V_GS = 10 V	4.2 mΩ (max) - Enables <1 W conduction loss at 25 A, critical for high-current synchronous rectifiers.
R_DS(on) @ V_GS = 4.5 V	5.7 mΩ (max) - Ensures robust turn-on with logic-level gate drivers (e.g., integrated controller outputs).
I_D (continuous, T_J = 150 °C)	25 A - Sustains high load currents without derating in thermally optimized layouts.
Q_g (total gate charge)	27 nC (typ) - Minimizes driver power loss and enables efficient 500 kHz–1 MHz switching in compact converters.
R_thJC	2.1 °C/W (typ) - Matches DPAK thermal performance; allows PCB copper to act as primary heatsink without external heatsinks.
C_iss/C_oss/C_rss	3775 / 630 / 295 pF @ V_DS = 15 V - Low capacitive losses and reduced EMI generation during hard switching.

Pinout & Package

SI7892BDP-T1-E3 uses the leadless PowerPAK® SO-8 package (6.15 mm × 5.15 mm × 1.07 mm), compatible with standard SO-8 footprints but featuring an exposed drain pad on the bottom for enhanced thermal conduction. The top-side pinout matches conventional SO-8: pins 1–4 are source terminals (S), pin 5 is gate (G), and pins 6–8 are drain terminals (D).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source connections reduce package inductance and improve current sharing in high-di/dt applications.
5	Gate (G)	Single gate terminal with R_g = 0.5–2.0 Ω (tested); optimized for low-noise, stable switching with minimal ringing.
6, 7, 8	Drain (D)	Three parallel drain terminals + bottom-exposed copper pad - forms low-impedance thermal and electrical path to PCB ground plane.

Key Features

Feature	Design Value
TrenchFET® silicon process	Delivers industry-leading R_DS(on) × Q_g figure of merit (FOM) for high-frequency efficiency in synchronous rectifiers.
PowerPAK® SO-8 package	Enables drop-in replacement on SO-8 layouts while achieving DPAK-equivalent thermal resistance (2.1 °C/W) via bottom-side thermal pad.
100% R_g tested	Guarantees gate resistance between 0.5 Ω and 2.0 Ω - ensures consistent turn-on timing and reduces gate driver stress.
Low-profile (1.07 mm)	Supports ultra-thin power modules and space-constrained consumer/industrial DC/DC designs without sacrificing thermal performance.
Halogen-free option available	Si7892BDP-T1-GE3 variant meets IEC 61249-2-21 requirements; SI7892BDP-T1-E3 is Pb-free and RoHS-compliant.

Applications

Server VRMs	Industrial DC/DC Converters
Use Scenario: High-current, multiphase buck converters supplying CPU/GPU core voltage (0.8–1.2 V @ up to 100 A per phase). IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET replacing Schottky diodes in low-side switch position; commutated at 300–1000 kHz. Use Value: Reduces conduction loss by >60% vs. 40-V Schottky diodes, lowering temperature rise by ~40 °C at 25 A and extending system lifetime.	Use Scenario: Isolated 48 V-to-12 V or 24 V-to-5 V DC/DC modules in programmable logic controllers and motor drives. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp forward topology; driven by transformer-coupled gate signals. Use Value: Achieves >95% full-load efficiency at 22 A output due to 4.2 mΩ R_DS(on), eliminating heat sink requirements in sealed enclosures.
Telecom Power Supplies	Laptop/Notebook Adapters
Use Scenario: 48 V input, 12 V/20 A intermediate bus converter in telecom shelf power systems. IC Role / Device Role / Timing Role: Primary-side high-side switch in half-bridge configuration; operated with 100 ns dead-time control. Use Value: Low C_rss (295 pF) minimizes shoot-through risk and dv/dt-induced false turn-on, improving reliability under transient load steps.	Use Scenario: Compact 65 W USB-C PD adapter with GaN primary-side switching and synchronous secondary-side rectification. IC Role / Device Role / Timing Role: Low-side synchronous rectifier driven by dedicated SR controller (e.g., MP6908) at 150–300 kHz. Use Value: 5.7 mΩ R_DS(on) at 4.5 V gate drive enables full regulation down to 3.3 V output without auxiliary bias winding.

Server VRMs

Industrial DC/DC Converters

Use Scenario: High-current, multiphase buck converters supplying CPU/GPU core voltage (0.8–1.2 V @ up to 100 A per phase).

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET replacing Schottky diodes in low-side switch position; commutated at 300–1000 kHz.

Use Value: Reduces conduction loss by >60% vs. 40-V Schottky diodes, lowering temperature rise by ~40 °C at 25 A and extending system lifetime.

Use Scenario: Isolated 48 V-to-12 V or 24 V-to-5 V DC/DC modules in programmable logic controllers and motor drives.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp forward topology; driven by transformer-coupled gate signals.

Use Value: Achieves >95% full-load efficiency at 22 A output due to 4.2 mΩ R_DS(on), eliminating heat sink requirements in sealed enclosures.

Telecom Power Supplies

Laptop/Notebook Adapters

Use Scenario: 48 V input, 12 V/20 A intermediate bus converter in telecom shelf power systems.

IC Role / Device Role / Timing Role: Primary-side high-side switch in half-bridge configuration; operated with 100 ns dead-time control.

Use Value: Low C_rss (295 pF) minimizes shoot-through risk and dv/dt-induced false turn-on, improving reliability under transient load steps.

Use Scenario: Compact 65 W USB-C PD adapter with GaN primary-side switching and synchronous secondary-side rectification.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier driven by dedicated SR controller (e.g., MP6908) at 150–300 kHz.

Use Value: 5.7 mΩ R_DS(on) at 4.5 V gate drive enables full regulation down to 3.3 V output without auxiliary bias winding.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	R_DS(on) = 3.8 mΩ @ 10 V; higher Q_g = 42 nC; same PowerPAK SO-8 package.	Better conduction loss but slower switching; suited for <300 kHz applications where efficiency > frequency is prioritized.	Choose SiR872DP-T1-GE3 when lowest possible R_DS(on) is critical and gate drive capability supports higher Q_g.
IRF7470PBF	Standard SO-8 package; R_DS(on) = 5.2 mΩ @ 10 V; R_thJC = 16 °C/W - significantly higher thermal resistance.	Requires larger PCB copper area or heatsink to match SI7892BDP-T1-E3 thermal performance; not pin-compatible due to different thermal pad layout.	Select IRF7470PBF only if legacy SO-8 footprint reuse is mandatory and thermal budget allows 40+ °C higher junction rise.

Compared with SI7892BDP-T1-E3, SiR872DP-T1-GE3 offers lower conduction loss but demands stronger gate drive, while IRF7470PBF sacrifices thermal performance for legacy compatibility - making SI7892BDP-T1-E3 the optimal balance of low R_DS(on), fast switching, and board-level thermal integration.

Availability

SI7892BDP-T1-E3 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, and telecom power supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for SI7892BDP-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The Si7892BDP belongs to Vishay's TrenchFET® PowerPAK® SO-8 family, engineered specifically for high-current, high-frequency synchronous rectification in space-constrained, thermally demanding power conversion systems.

FAQ

What is the maximum continuous drain current rating for SI7892BDP-T1-E3 at 70 °C ambient?

The SI7892BDP-T1-E3 supports 20 A continuous drain current at T_A = 70 °C (steady-state, with proper PCB thermal design). This rating assumes mounting on a 1" × 1" FR4 board with minimum recommended copper area per Vishay Application Note AN821. Derating curves in the datasheet (Document 73228, Rev. C) confirm linear reduction from 25 A at 25 °C to 12 A at 100 °C ambient.

Does SI7892BDP-T1-E3 have a built-in body diode, and what is its forward voltage?

Yes, SI7892BDP-T1-E3 includes an intrinsic body diode with V_SD = 0.75–1.2 V at I_S = 4.5 A and V_GS = 0 V (T_J = 25 °C). This diode enables freewheeling operation in synchronous rectifier and H-bridge configurations. Reverse recovery charge Q_rr is 40–60 nC, supporting moderate-frequency hard-switched use.

Is SI7892BDP-T1-E3 compatible with standard SO-8 reflow soldering profiles?

Yes, SI7892BDP-T1-E3 is qualified for Pb-free reflow per JEDEC J-STD-020. The peak temperature must not exceed 255 °C for ≤30 s, with time above 217 °C limited to 60–150 s. Full profile details are published in Vishay document 73257. Manual soldering with an iron is not recommended due to its leadless construction and thermal mass distribution.

What is the gate threshold voltage range for SI7892BDP-T1-E3, and how does it vary with temperature?

The gate threshold voltage V_GS(th) for SI7892BDP-T1-E3 is specified from 1.0 V to 3.0 V at V_DS = V_GS and I_D = 250 µA (T_J = 25 °C), with a temperature coefficient ΔV_GS(th)/T_J = −6.5 mV/°C. This negative coefficient ensures stable turn-on behavior across −55 °C to 150 °C operating range, critical for automotive and industrial environments.

Can SI7892BDP-T1-E3 be used as a high-side switch, and what gate drive voltage is required?

SI7892BDP-T1-E3 is optimized as a low-side or synchronous rectifier switch but can operate as a high-side switch with appropriate gate drive. It requires V_GS ≥ 4.5 V for full enhancement; 10 V drive yields lowest R_DS(on). For high-side use, a bootstrap or isolated gate driver capable of delivering ≥12 V relative to source is recommended to ensure robust saturation and minimize switching losses.

SI7892BDP-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SO-8

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.2mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3775 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.8W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SO-8

SI7892BDP-T1-E3 FAQ

1.How can I place an order for SI7892BDP-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI7892BDP-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI7892BDP-T1-E3 reliable?

The price and inventory of SI7892BDP-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7892BDP-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI7892BDP-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7892BDP-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI7892BDP-T1-E3?

SI7892BDP-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI7892BDP-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI7892BDP-T1-E3?

For technical support, including SI7892BDP-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7892BDP-T1-E3 requirements.

6.How does Aetrix verify that SI7892BDP-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI7892BDP-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7892BDP-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI7892BDP-T1-E3?

All SI7892BDP-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7892BDP-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI7892BDP-T1-E3 part is unused and in its original packaging.

Return procedure for SI7892BDP-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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