My Inquiry
My Account
Vishay Siliconix SI7913DN-T1-GE3
- Part No.:
- SI7913DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FET, MOSFET Arrays
- Package:
- PowerPAK® 1212-8 Dual
- Datasheet:
-
SI7913DN-T1-GE3.pdf
- Description:
- MOSFET 2P-CH 20V 5A PPAK 1212
- Quantity:
- Payment:
- Shipping:
Inventory:1,800
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SI7913DN-T1-GE3 from Vishay Siliconix is a dual P-channel enhancement-mode MOSFET in PowerPAK® 1212-8 package, rated for -20 V VDS, 0.037 Ω RDS(on) at VGS = -4.5 V, and -7.4 A continuous drain current at TA = 25 °C. It serves as a compact, low-RDS(on) load switch or battery protection switch in portable power rails.
For engineers reviewing the SI7913DN-T1-GE3 datasheet, SI7913DN-T1-GE3 pinout, SI7913DN-T1-GE3 application, or SI7913DN-T1-GE3 equivalent, key selection criteria include its halogen-free and lead-free compliance, ultra-low thermal resistance (RthJA = 35 °C/W, t ≤ 10 s), dual-channel isolation, and gate threshold voltage of -0.40 to -1.0 V - critical for low-voltage logic-level drive in space-constrained battery-powered systems.
Technical Context
This dual P-channel MOSFET uses Vishay's TrenchFET® technology to achieve low on-resistance with fast switching performance: total gate charge is 15.3–24 nC at VDS = -10 V, VGS = -4.5 V, and turn-off delay time is 72–110 ns under standard test conditions (VDD = -10 V, Rg = 6 Ω).
It features integrated body diodes with VSD = -0.74 to -1.2 V at IS = -2.3 A and exhibits stable RDS(on) over temperature - normalized to 1.0 at 25 °C and ~1.4 at 125 °C - enabling predictable conduction loss in thermally dynamic portable environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - maximum blocking voltage for battery-side high-side switching in 3.3 V/5 V systems |
| RDS(on) | 0.037 Ω at VGS = -4.5 V - enables <100 mW conduction loss at 7.4 A, minimizing self-heating |
| ID (continuous) | -7.4 A at TA = 25 °C - supports high-current load switching without external heatsinking |
| VGS(th) | -0.40 to -1.0 V - ensures reliable turn-on with 1.8 V or 2.5 V logic controllers |
| RthJA | 35 °C/W (t ≤ 10 s) - delivers superior thermal performance vs. TSSOP-8 (52 °C/W) and SO-8 (20 °C/W) |
| Qg | 15.3–24 nC - balances switching speed and gate drive power in portable DC-DC and power-path control |
| VSD | -0.74 to -1.2 V - defines forward voltage drop during reverse-current conduction in battery backup paths |
Pinout & Package
SI7913DN-T1-GE3 is housed in a leadless PowerPAK® 1212-8 package (3.30 mm × 3.30 mm footprint, 1.05 mm height) with exposed drain pads for low thermal impedance. The dual P-channel configuration provides fully isolated channels with shared substrate grounding.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S1 | Source 1 | Return path for Channel 1; electrically isolated from S2 and D2 |
| G1 | Gate 1 | Control input for Channel 1; requires negative bias relative to S1 to turn on |
| S2 | Source 2 | Return path for Channel 2; electrically isolated from S1 and D1 |
| G2 | Gate 2 | Control input for Channel 2; independent of G1 for dual-switch sequencing |
| D1 | Drain 1 | High-side power input/output for Channel 1; tied to exposed copper pad for thermal conduction |
| D2 | Drain 2 | High-side power input/output for Channel 2; tied to second exposed copper pad |
Key Features
| Feature | Design Value |
|---|---|
| Halogen-free & Pb-free construction | Complies with IEC 61249-2-21 and RoHS; eliminates hazardous material concerns in consumer portable designs |
| PowerPAK® 1212-8 package | Delivers RthJC = 4–5 °C/W and 40 % smaller footprint than TSSOP-8 - ideal for ultra-thin mobile PCBs |
| TrenchFET® process | Enables 0.037 Ω RDS(on) at -4.5 V while maintaining robust 20 V breakdown - optimized for efficiency in 3.3 V–5 V logic-driven switches |
| Low VGS(th) range | -0.40 to -1.0 V threshold ensures full enhancement with 1.8 V GPIO or PMIC outputs - no level-shifting required |
| Integrated body diodes | Supports bidirectional current flow in battery switchover and reverse-polarity protection circuits without external diodes |
Applications
| Portable PA Switch | Battery Protection Switch |
|---|---|
Use Scenario: Enabling/disabling RF power amplifier supply in smartphones and wearables during sleep mode. IC Role / Device Role / Timing Role: Dual-channel high-side load switch controlling independent PA bias rails with fast turn-off to prevent leakage. Use Value: 0.037 Ω RDS(on) limits voltage drop to <280 mV at 7.4 A, preserving PA efficiency; low Qg enables sub-100 ns switching for precise RF envelope control. | Use Scenario: Isolating main Li-ion battery from system during overvoltage, undervoltage, or thermal fault conditions. IC Role / Device Role / Timing Role: Dual P-channel MOSFET providing redundant, independently controlled battery disconnect paths with integrated body diodes for reverse-current blocking. Use Value: -20 V rating covers full battery voltage range (2.5–4.4 V + transients); -1.0 V max VGS(th) allows direct interface with fuel-gauge ICs operating at 1.8 V. |
| USB-C Load Switch | Hot-Swap Power Path Controller |
Use Scenario: Managing VBUS power delivery in USB-C receptacles where dual-path redundancy improves reliability. IC Role / Device Role / Timing Role: Dual independent load switches handling separate CC line power paths or redundant VBUS routing in docking stations. Use Value: PowerPAK 1212-8's 35 °C/W RthJA prevents thermal derating at 5 V/3 A loads; halogen-free compliance meets strict OEM environmental requirements. | Use Scenario: Inserting auxiliary power sources (e.g., external battery packs) into live systems without disrupting operation. IC Role / Device Role / Timing Role: Dual-channel hot-swap controller managing inrush limiting and fault isolation between primary and secondary supplies. Use Value: Independent gate control (G1/G2) enables staggered turn-on to suppress inrush; low RDS(on) minimizes insertion loss (<150 mW at 5 A), preserving system voltage stability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7911DN-T1-GE3 | Same PowerPAK 1212-8 package, but single-channel P-channel (-20 V, 0.037 Ω @ -4.5 V); lacks second channel | Not suitable for dual-path isolation; only appropriate when one switch suffices | Select if board layout or BOM simplification prioritizes single-channel operation with identical RDS(on) and thermal specs |
| DMC3025LSD-13 | Single P-channel in PowerDI™ 3333 package (-30 V, 0.025 Ω @ -4.5 V); higher voltage rating but no dual-channel capability | Used where 30 V blocking is mandatory (e.g., industrial 24 V rails); incompatible pinout and footprint | Choose only when VDS > 20 V is required and dual-channel functionality is not needed |
Compared with SI7913DN-T1-GE3, Si7911DN-T1-GE3 reduces channel count but retains identical thermal and conduction performance per channel, while DMC3025LSD-13 trades dual-channel integration for higher voltage headroom and lower RDS(on) - making SI7913DN-T1-GE3 uniquely suited for compact, dual-rail portable power management where space and channel independence are critical.
Availability
SI7913DN-T1-GE3 is available at Aetrix Electronics and suitable for portable PA switching, battery protection switching, and USB-C load switching requiring stable component supply, halogen-free compliance, and high thermal efficiency in space-constrained layouts.
Supply support for SI7913DN-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.
The Si7913DN product line targets portable and battery-powered applications demanding ultra-compact, thermally efficient dual-channel P-channel switches - specifically engineered for low-voltage logic compatibility and minimal PCB real estate consumption.
FAQ
What is the maximum continuous drain current rating for SI7913DN-T1-GE3 at 85 °C ambient?
The SI7913DN-T1-GE3 supports -5.3 A continuous drain current per channel at TA = 85 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PowerPAK 1212-8 package under steady-state convection cooling; actual usable current may increase with PCB copper area and airflow. SI7913DN-T1-GE3 maintains consistent performance across both channels under these conditions.
Does SI7913DN-T1-GE3 require a negative gate drive voltage to operate?
No - SI7913DN-T1-GE3 is a P-channel MOSFET and turns on when the gate is driven *below* the source voltage. With source tied to battery positive (high-side configuration), applying 0 V to the gate (relative to system ground) achieves full enhancement. Its VGS(th) range of -0.40 to -1.0 V means it fully conducts with 1.8 V logic-high referenced to source, eliminating need for dedicated negative supplies. SI7913DN-T1-GE3 operates reliably in standard 1.8 V/2.5 V/3.3 V GPIO-controlled topologies.
Can SI7913DN-T1-GE3 be used in synchronous rectification applications?
No - SI7913DN-T1-GE3 is not designed for synchronous rectification. Its body diode forward voltage (VSD = -0.74 to -1.2 V) and lack of specified reverse recovery time (trr) optimized for high-frequency switching make it unsuitable for flyback or buck converter secondary-side rectification. It is intended for DC load switching, battery protection, and power-path control where unidirectional or bidirectional blocking-not high-frequency conduction-is required. SI7913DN-T1-GE3 does not replace dedicated synchronous rectifier MOSFETs.
What is the thermal resistance from junction to case (RthJC) for SI7913DN-T1-GE3?
The SI7913DN-T1-GE3 has a typical junction-to-case thermal resistance of 4 °C/W and a maximum of 5 °C/W under steady-state conditions. This low value is enabled by the exposed drain pads in the PowerPAK 1212-8 package, which provide direct thermal conduction paths to the PCB. When mounted on a 4-layer board with internal ground/power planes, SI7913DN-T1-GE3 achieves significantly lower effective thermal resistance than SO-8 or TSSOP-8 alternatives. SI7913DN-T1-GE3 leverages this for sustained high-current operation without thermal throttling.
Is SI7913DN-T1-GE3 compatible with lead-free reflow soldering profiles?
Yes - SI7913DN-T1-GE3 is qualified for lead-free reflow per JEDEC J-STD-020. Its peak reflow temperature is rated to 240 +5/-0 °C for 20–40 seconds, matching standard Pb-free SAC305 profiles. The device undergoes preconditioning and reliability testing (temperature cycling, HAST) after exposure to this profile. SI7913DN-T1-GE3 also complies with IPC/JEDEC J-STD-033 moisture sensitivity level (MSL) 1, allowing unlimited floor life at ≤30 °C/60% RH. SI7913DN-T1-GE3 is fully compatible with automated SMT assembly lines using industry-standard Pb-free processes.
SI7913DN-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® 1212-8 Dual
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 5A
- Rds On (Max) @ Id, Vgs:
- 37mOhm @ 7.4A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 24nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- Power - Max:
- 1.3W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® 1212-8 Dual
SI7913DN-T1-GE3 FAQ
1.How can I place an order for SI7913DN-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI7913DN-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI7913DN-T1-GE3 reliable?
The price and inventory of SI7913DN-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI7913DN-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI7913DN-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI7913DN-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI7913DN-T1-GE3?
SI7913DN-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI7913DN-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI7913DN-T1-GE3?
For technical support, including SI7913DN-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI7913DN-T1-GE3 requirements.
6.How does Aetrix verify that SI7913DN-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI7913DN-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI7913DN-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI7913DN-T1-GE3?
All SI7913DN-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI7913DN-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI7913DN-T1-GE3 part is unused and in its original packaging.
Return procedure for SI7913DN-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SI7913DN-T1-GE3 Tags
-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
-
2N7002DW-7-F
Diodes Incorporated
-
SSM6L56FE,LM
Toshiba Semiconductor and Storage
-
SSM6N37FU,LF
Toshiba Semiconductor and Storage
-
2N7002DWH6327XTSA1
Infineon Technologies
-
2N7002BKS,115
Nexperia USA Inc.
-
DMG1016UDW-7
Diodes Incorporated
-
UM6K33NTN
Rohm Semiconductor
-
DMG6602SVT-7
Diodes Incorporated
-
EM6K34T2CR
Rohm Semiconductor
-
UM6K34NTCN
Rohm Semiconductor
-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
