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Vishay Siliconix SI8401DB-T1-E1
- Part No.:
- SI8401DB-T1-E1
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 4-XFBGA, CSPBGA
- Datasheet:
-
SI8401DB-T1-E1.pdf
- Description:
- MOSFET P-CH 20V 3.6A 4MICROFOOT
- Quantity:
- Payment:
- Shipping:
Inventory:6,782
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Product details
Overview
SI8401DB-T1-E1 from Vishay Siliconix is a P-channel enhancement-mode MOSFET in MICRO FOOT® 1.6 mm × 1.6 mm chipscale package, rated for −20 V VDS, 0.065 Ω RDS(on) at VGS = −4.5 V, and −4.9 A continuous drain current at TA = 25 °C. It serves as a compact, low-profile load switch in portable battery-powered systems.
For engineers reviewing the SI8401DB-T1-E1 datasheet, SI8401DB-T1-E1 pinout, SI8401DB-T1-E1 application, or SI8401DB-T1-E1 equivalent, key selection criteria include its ultra-low footprint, trench-based on-resistance per area, gate threshold voltage range (−0.45 to −1.4 V), thermal resistance to ambient (72 °C/W steady-state), and compatibility with standard reflow profiles per J-STD-020.
Technical Context
This device uses TrenchFET® technology to achieve high channel density and low RDS(on) in a wafer-level chip-scale package. Its gate threshold voltage (VGS(th)) is specified between −0.45 V and −1.4 V at ID = −250 μA, enabling robust turn-on control with logic-level gate drive down to −2.5 V.
The MICRO FOOT® 4-bump configuration places drain (D), source (S), and gate (G) terminals on the active die surface with defined bump pitch (0.8 mm), diameter (0.37–0.41 mm), and height (0.26–0.29 mm). Thermal path is optimized via direct die-to-PCB conduction, yielding RthJF = 16 °C/W (typ.) to the drain foot.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −20 V - Maximum reverse-blocking capability across drain-source under DC conditions |
| RDS(on) @ VGS = −4.5 V | 0.065 Ω - On-resistance measured at 1 A, defining conduction loss in load-switch applications |
| ID (continuous) | −4.9 A @ TA = 25 °C - Max sustainable DC current without exceeding TJ = 150 °C on FR4 board |
| VGS(th) | −0.45 to −1.4 V - Gate voltage range where device transitions from off to on, critical for low-voltage control interface design |
| Qg | 11–17 nC - Total gate charge determining switching speed and driver strength requirements |
| RthJA (steady-state) | 72 °C/W - Junction-to-ambient thermal resistance on 1" × 1" FR4, used to calculate temperature rise under power dissipation |
| PD (TA = 25 °C) | 2.77 W - Max power dissipation before junction exceeds 150 °C, limited by package thermal performance |
Pinout & Package
MICRO FOOT® 1.6 mm × 1.6 mm chipscale package with four solder bumps; no external leads or molded body. Bump composition is 95.5/3.8/0.7 Sn/Ag/Cu; backside coated with Ti/Ni/Ag layer. Pin 1 identified by laser mark on die backside.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires −4.5 V to fully enhance; input capacitance Ciss = 1200 pF @ VDS = 10 V |
| 2 (D) | Drain | Main current-carrying terminal connected to PCB ground plane or system return; also thermal path to PCB |
| 3 (D) | Drain | Second drain bump - paralleled with Pin 2 to reduce current density and thermal resistance |
| 4 (S) | Source | Reference terminal for gate drive and load current return; internal body diode anode |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables 0.065 Ω RDS(on) in 1.6 mm × 1.6 mm footprint - reduces board area vs. SO-8 or TSOP-6 equivalents by >80% |
| MICRO FOOT® packaging | 0.62 mm profile and 0.29 mm bump height - supports ultra-thin portable designs and improves thermal coupling to PCB |
| Pin compatibility with Si3443DV | Same 4-bump layout and pitch (0.8 mm) - allows drop-in replacement in existing layouts designed for that industry-standard part |
| Low gate charge (Qg = 11–17 nC) | Reduces switching losses and enables use with low-power gate drivers in battery-constrained systems |
| Specified RDS(on) at VGS = −2.5 V | 0.095 Ω - ensures usable on-resistance with single-cell Li-ion or regulated 2.5 V logic rails |
Applications
| Battery Load Switch | Power Amplifier (PA) Switch |
|---|---|
Use Scenario: Isolating backup battery from main system during sleep or fault conditions in wearables and IoT sensors. IC Role / Device Role / Timing Role: High-side P-channel load switch controlling power delivery path with fast turn-off (<135 ns td(off)) to prevent leakage. Use Value: 0.065 Ω RDS(on) limits voltage drop to <325 mV at 5 A, preserving battery runtime; MICRO FOOT® footprint saves >1.5 mm² vs. SOT-23 alternatives. | Use Scenario: Enabling/disabling RF power amplifier stages in cellular handsets and Bluetooth modules to minimize standby current. IC Role / Device Role / Timing Role: Fast-switching P-channel switch placed between PA supply rail and VBAT, driven by baseband processor GPIO. Use Value: 28 ns rise time and 60 ns fall time enable clean, glitch-free PA enable timing; −1.4 V max VGS(th) ensures reliable turn-on with 1.8 V logic. |
| Battery Charger Switch | USB Power Delivery Path Control |
Use Scenario: Controlling charging current flow from USB-C or wall adapter into Li-ion cell in portable medical devices and power banks. IC Role / Device Role / Timing Role: Reverse-polarity protected, low-loss series switch in charger input path, operating with −20 V maximum input tolerance. Use Value: −20 V VDS rating accommodates USB PD transient surges; 0.095 Ω RDS(on) at −2.5 V gate drive allows direct connection to charger IC's enable output. | Use Scenario: Managing dual-input power routing (e.g., battery + USB) in smart speakers and portable monitors with USB-C PD support. IC Role / Device Role / Timing Role: Bidirectional blocking switch isolating battery from USB port during host negotiation or fault events. Use Value: Integrated body diode (VSD = −0.73 V typ.) supports reverse-current protection without external diodes; 1.6 mm × 1.6 mm size fits tight space constraints near USB-C connector. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si3443DV | Identical MICRO FOOT® 1.6 mm × 1.6 mm 4-bump package, same pinout, −20 V rating, but higher RDS(on) (0.085 Ω @ −4.5 V) | Same use cases; slightly higher conduction loss limits max current to −4.2 A at TA = 25 °C | Select Si3443DV only if SI8401DB-T1-E1 is unavailable; verify thermal margin due to +31% RDS(on). |
| DMN2011UW-7 | 1.6 mm × 1.6 mm DFN package, −20 V, 0.075 Ω @ −4.5 V, but uses conventional leadframe (not chipscale); RthJA = 95 °C/W (higher) | Acceptable for lower-power loads (<3 A); less suitable for thermally constrained thin devices due to thicker profile and poorer PCB thermal coupling | Prefer DMN2011UW-7 only when legacy DFN assembly lines lack MICRO FOOT® reflow capability or underfill process validation. |
Compared with Si3443DV and DMN2011UW-7, SI8401DB-T1-E1 delivers the lowest RDS(on) per unit area and best thermal resistance to PCB, making it optimal for space- and thermal-limited battery-switch applications where efficiency and form factor are prioritized over legacy package compatibility.
Availability
SI8401DB-T1-E1 is available at Aetrix Electronics and suitable for battery load switching, power amplifier enable control, and USB-C power path management requiring stable component supply across high-mix consumer electronics production.
Supply support for SI8401DB-T1-E1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-efficiency power management solutions for portable and industrial electronics.
The SI8401DB-T1-E1 belongs to Vishay's MICRO FOOT® TrenchFET® MOSFET product line, engineered specifically for ultra-compact, high-current-density load switching in space-constrained battery-powered devices.
FAQ
What is the maximum gate-source voltage rating for SI8401DB-T1-E1?
The absolute maximum gate-source voltage (VGS) for SI8401DB-T1-E1 is ±12 V. Exceeding this rating risks permanent gate oxide damage. The device is typically operated with VGS between −2.5 V and −4.5 V to ensure full enhancement while maintaining safe margin. This specification is confirmed in the Absolute Maximum Ratings table of Vishay document 71674.
Does SI8401DB-T1-E1 include an integrated body diode, and what is its forward voltage?
Yes, SI8401DB-T1-E1 includes an inherent parasitic body diode formed by the MOSFET structure. Its typical forward voltage (VSD) is −0.73 V at IS = −1 A and VGS = 0 V, with a maximum of −1.1 V. This diode conducts in the source-to-drain direction and is relevant for reverse-current protection and synchronous rectification analysis.
Can SI8401DB-T1-E1 be used with a 1.8 V logic-level gate drive?
Yes - SI8401DB-T1-E1 has a guaranteed gate threshold voltage (VGS(th)) as low as −0.45 V, and its RDS(on) is characterized down to VGS = −2.5 V (0.095 Ω). At 1.8 V logic swing (i.e., VGS ≈ −1.8 V), the device remains conductive with RDS(on) ~0.11 Ω (interpolated from typical curves), making it suitable for direct GPIO control in modern low-voltage SoCs.
What is the thermal resistance from junction to foot (RthJF) for SI8401DB-T1-E1, and why does it matter?
SI8401DB-T1-E1 has a typical junction-to-foot thermal resistance (RthJF) of 16 °C/W under steady-state conditions. This parameter quantifies heat transfer from the silicon die directly to the drain bumps and into the PCB copper, bypassing the traditional case-to-ambient path. It matters because it enables accurate thermal modeling in ultra-thin designs where convection cooling is minimal and PCB copper acts as the primary heatsink.
Is SI8401DB-T1-E1 compatible with lead-free reflow processes per J-STD-020?
Yes, SI8401DB-T1-E1 is qualified for lead-free reflow per IPC/JEDEC J-STD-020, with a peak reflow temperature of 260 °C. The MICRO FOOT® package uses Sn/Ag/Cu solder bumps and is rated for IR and convection reflow. Hand soldering is not recommended; refer to Vishay application note AN824 for stencil design and land pattern guidelines.
SI8401DB-T1-E1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 4-XFBGA, CSPBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 65mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 17 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.47W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 4-Microfoot
SI8401DB-T1-E1 FAQ
1.How can I place an order for SI8401DB-T1-E1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI8401DB-T1-E1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI8401DB-T1-E1 reliable?
The price and inventory of SI8401DB-T1-E1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8401DB-T1-E1 is usually 5 days.
3.What payment methods are accepted for SI8401DB-T1-E1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8401DB-T1-E1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI8401DB-T1-E1?
SI8401DB-T1-E1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI8401DB-T1-E1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI8401DB-T1-E1?
For technical support, including SI8401DB-T1-E1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8401DB-T1-E1 requirements.
6.How does Aetrix verify that SI8401DB-T1-E1 is sourced from the original manufacturer or authorized distributors?
All SI8401DB-T1-E1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8401DB-T1-E1 meets industry standards.
7.What is the process for return or replacement of SI8401DB-T1-E1?
All SI8401DB-T1-E1 units undergo pre-shipment inspection (PSI). If there is an issue with SI8401DB-T1-E1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI8401DB-T1-E1 part is unused and in its original packaging.
Return procedure for SI8401DB-T1-E1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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