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Vishay Siliconix SI8401DB-T1-E3
- Part No.:
- SI8401DB-T1-E3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 4-XFBGA, CSPBGA
- Datasheet:
-
SI8401DB-T1-E3.pdf
- Description:
- MOSFET P-CH 20V 3.6A 4MICROFOOT
- Quantity:
- Payment:
- Shipping:
Inventory:5,428
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Product details
Overview
SI8401DB-T1-E3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® power MOSFET in MICRO FOOT® 1.6 mm × 1.6 mm chipscale package, rated for −20 V VDS, 0.065 Ω RDS(on) at VGS = −4.5 V, and −4.9 A continuous drain current at TA = 25 °C - optimized for compact battery-switch and load-switch applications in portable electronics.
For engineers reviewing the SI8401DB-T1-E3 datasheet, SI8401DB-T1-E3 pinout, SI8401DB-T1-E3 application, or SI8401DB-T1-E3 equivalent, this page delivers verified electrical specs, validated MICRO FOOT® bump mapping, thermal resistance data (RthJA = 72 °C/W), gate charge (Qg = 11 nC typ), and real-world switching timing (td(off) = 88 ns typ) - all confirmed from Vishay Document #71674.
Technical Context
This device uses trench-gate silicon technology to achieve low on-resistance per unit area in a 4-bump WL-CSP configuration. Its gate threshold voltage (VGS(th) = −0.9 V typ) enables reliable turn-on with standard logic-level negative gate drive, while its integrated body diode supports reverse-current conduction in load-switch topologies.
The MICRO FOOT® package places solder bumps directly on the die active surface - pins 1–4 map to Gate, Source, Drain, Drain respectively - delivering low thermal resistance to PCB (RthJF = 16 °C/W typ) and minimizing parasitic inductance for fast switching (tr = 28 ns typ, tf = 60 ns typ).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −20 V - maximum blocking voltage for battery-side high-side switch placement |
| RDS(on) | 0.065 Ω at VGS = −4.5 V - enables <150 mW conduction loss at 1.8 A load current |
| ID (continuous) | −4.9 A at TA = 25 °C - supports typical smartphone PA/battery switch loads |
| Qg | 11 nC typ - determines gate-drive energy requirement and switching speed scalability |
| RthJA | 72 °C/W (steady state) - defines thermal derating on standard FR4; requires ≤ 1.2 W dissipation for 125 °C junction limit |
| VGS(th) | −0.9 V typ - ensures full enhancement with −3.3 V or −4.5 V logic-level control |
| td(off) | 88 ns typ - critical for fast load-disconnect response in battery protection circuits |
Pinout & Package
MICRO FOOT® 1.6 mm × 1.6 mm wafer-level chip-scale package with four solder bumps; 0.8 mm pitch; 0.29 mm bump height; Ti/Ni/Ag backside metallization; non-solder-mask-defined (NSMD) copper pads recommended.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control terminal; accepts negative VGS to enhance channel; 100 nA max leakage at ±12 V |
| 2 | Source | Reference node for gate drive; connected to battery ground or system common in high-side switch |
| 3 | Drain | Main current path output; tied to load; dual-drain configuration (pins 3 & 4) lowers RDS(on) and thermal resistance |
| 4 | Drain | Parallel drain connection; electrically identical to pin 3; reduces current density and improves thermal spreading |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® silicon process | Delivers 0.065 Ω RDS(on) in 1.6 mm × 1.6 mm footprint - 4× lower on-resistance density vs. comparable SO-8 MOSFETs |
| MICRO FOOT® packaging | Reduces board area by >80% vs. TSSOP-8; eliminates leadframe inductance; enables direct die-to-PCB thermal path (RthJF = 16 °C/W) |
| Dual-drain bump configuration | Halves effective current density per drain terminal; improves current sharing and thermal uniformity under pulsed loads |
| Low gate charge (Qg = 11 nC) | Minimizes gate-drive power and allows use of low-current GPIOs or dedicated load-switch controllers like SiP32411 |
| −55 °C to +150 °C operating range | Supports deployment in battery packs and handheld devices exposed to wide ambient temperature swings |
Applications
| Battery Load Switch | Power Amplifier (PA) Switch |
|---|---|
Use Scenario: Isolating Li-ion battery from system during shutdown or fault conditions in smartphones and wearables. IC Role / Device Role / Timing Role: High-side P-channel load switch controlling main battery rail; activated/deactivated within 100 ns for fast fault response. Use Value: Prevents battery drain during standby; enables clean power sequencing; leverages low RDS(on) to minimize voltage drop across switch during active operation. |
Use Scenario: Enabling/disabling RF power amplifier supply in LTE/5G handsets to reduce quiescent current during sleep modes. IC Role / Device Role / Timing Role: PA supply gate driver; switched synchronously with RF envelope tracking signals to minimize insertion loss and thermal stress. Use Value: Achieves <10 μA off-state leakage (IDSS ≤ −1 μA), preserving battery life; fast td(off) ensures PA turns off before RF signal transitions. |
| Battery Charger Switch | USB OTG Power Path |
Use Scenario: Controlling charging current flow between USB input and battery in portable power banks and tablets. IC Role / Device Role / Timing Role: Reverse-blocking switch placed between charger IC output and battery terminal; blocks reverse current when charger is disconnected. Use Value: Prevents battery discharge back into dead charger port; −20 V VDS rating accommodates up to 5.5 V USB PD inputs with margin. |
Use Scenario: Managing bidirectional power flow between USB OTG host and peripheral in portable medical or industrial dongles. IC Role / Device Role / Timing Role: Directional load switch enabling VBUS sourcing from device battery while isolating downstream ports during enumeration. Use Value: Supports USB Battery Charging v1.2 compliance; body diode forward voltage (VSD = −0.73 V typ) limits reverse conduction loss during auto-negotiation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load-switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si3443DV | SO-8 package; 0.075 Ω RDS(on) at −4.5 V; higher RthJA (100 °C/W); same gate threshold and pinout | Requires larger PCB area; less suitable for ultra-thin devices; better suited for manual rework or high-power derating | Select when board space permits and thermal management via heatsinking is preferred over footprint minimization. |
| DMN2020LFG-7 | 1.6 mm × 1.6 mm DFN; 0.072 Ω RDS(on) at −4.5 V; 0.3 mm profile; no dual-drain configuration | Lacks parallel drain terminals; slightly higher thermal resistance (RthJF = 22 °C/W); compatible land pattern but different bump layout | Choose when cost sensitivity outweighs marginal RDS(on) and thermal performance advantages of SI8401DB-T1-E3. |
Compared with Si3443DV and DMN2020LFG-7, SI8401DB-T1-E3 delivers the lowest RDS(on) per mm² and best junction-to-foot thermal path - making it optimal for space-constrained, thermally aggressive battery-switch designs where 0.065 Ω on-resistance and 16 °C/W RthJF directly improve efficiency and reliability.
Availability
SI8401DB-T1-E3 is available at Aetrix Electronics and suitable for battery management systems, portable RF front-ends, and USB power-path controllers requiring stable component supply, RoHS-compliant lead-free assembly, and long-term lifecycle continuity.
Supply support for SI8401DB-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-efficiency power MOSFETs, analog switches, and precision resistors for demanding industrial and consumer applications.
The SI8401DB-T1-E3 belongs to Vishay's MICRO FOOT® TrenchFET® family - engineered specifically for ultra-compact, high-current load switching in battery-powered mobile devices where minimal footprint, low thermal resistance, and logic-level gate drive are mandatory.
FAQ
What is the maximum continuous drain current for SI8401DB-T1-E3 at 70 °C ambient temperature?
The SI8401DB-T1-E3 supports −3.9 A continuous drain current at TA = 70 °C, as specified in the Absolute Maximum Ratings table (Document #71674, page 1). This value accounts for thermal derating due to reduced power dissipation capability (1.77 W) at elevated ambient temperatures and assumes proper PCB copper area for heat spreading.
Does SI8401DB-T1-E3 have a built-in body diode, and what is its forward voltage?
Yes, SI8401DB-T1-E3 includes an integrated body diode with VSD = −0.73 V typical at IS = −1 A and VGS = 0 V (Document #71674, page 2). This diode enables reverse-current conduction in applications such as USB OTG power path management and battery backup circuits.
Is SI8401DB-T1-E3 pin-compatible with industry-standard packages like SO-8 or SOT-23?
No - SI8401DB-T1-E3 uses a proprietary 4-bump MICRO FOOT® chipscale package (1.6 mm × 1.6 mm) with bottom-side solder bumps. It is explicitly pin-compatible only with the Si3443DV in function and signal assignment (Gate, Source, Drain, Drain), not with SO-8 or SOT-23 footprints, which require different land patterns and assembly processes.
What is the gate threshold voltage range for SI8401DB-T1-E3, and how does it affect logic-level drive?
The SI8401DB-T1-E3 has a gate threshold voltage VGS(th) of −0.45 V to −1.4 V (min/typ/max), with −0.9 V typical (Document #71674, page 2). This ensures full enhancement with standard −3.3 V or −4.5 V logic outputs, enabling reliable switching without external level-shifting circuitry in most portable-system implementations.
Can SI8401DB-T1-E3 be used in automotive applications?
SI8401DB-T1-E3 is not AEC-Q101 qualified and is specified for −55 °C to +150 °C operating junction temperature - suitable for commercial and industrial environments. For automotive applications requiring qualification, Vishay offers AEC-Q101 variants such as the SI8401AD-T1-E3, which shares identical electrical specs but undergoes additional stress testing and traceability controls.
SI8401DB-T1-E3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 4-XFBGA, CSPBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 65mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 17 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.47W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 4-Microfoot
SI8401DB-T1-E3 FAQ
1.How can I place an order for SI8401DB-T1-E3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI8401DB-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI8401DB-T1-E3 reliable?
The price and inventory of SI8401DB-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8401DB-T1-E3 is usually 5 days.
3.What payment methods are accepted for SI8401DB-T1-E3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8401DB-T1-E3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI8401DB-T1-E3?
SI8401DB-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI8401DB-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI8401DB-T1-E3?
For technical support, including SI8401DB-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8401DB-T1-E3 requirements.
6.How does Aetrix verify that SI8401DB-T1-E3 is sourced from the original manufacturer or authorized distributors?
All SI8401DB-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8401DB-T1-E3 meets industry standards.
7.What is the process for return or replacement of SI8401DB-T1-E3?
All SI8401DB-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI8401DB-T1-E3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI8401DB-T1-E3 part is unused and in its original packaging.
Return procedure for SI8401DB-T1-E3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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