Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI8406DB-T2-E1

Name: SI8406DB-T2-E1
Brand: Vishay Siliconix
SKU: SI8406DB-T2-E1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SI8406DB-T2-E1

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 6-UFBGA

Datasheet:: SI8406DB-T2-E1.pdf

Description:: MOSFET N-CH 20V 16A 6MICRO FOOT

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,466

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SI8406DB-T2-E1 from Vishay Siliconix is an N-channel 20 V (D-S) TrenchFET® power MOSFET in a MICRO FOOT® 1.5 mm × 1 mm package, featuring R_DS(on) = 0.033 Ω at V_GS = 4.5 V, 16 A continuous drain current (T_C = 25 °C), and ultra-thin 0.59 mm max height - optimized for space-constrained load switch and battery management applications.

For engineers reviewing the SI8406DB-T2-E1 datasheet, SI8406DB-T2-E1 pinout, SI8406DB-T2-E1 application, or SI8406DB-T2-E1 equivalent, this page delivers verified package dimensions, validated thermal resistance (R_thJC = 7 °C/W typ.), confirmed gate charge (Q_g = 7.5 nC at V_GS = 4.5 V), and real-world body diode recovery (t_rr = 15 ns), enabling accurate switching loss estimation and PCB layout planning.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance with fast switching dynamics. Its 6-bump MICRO FOOT® package uses Sn/Ag/Cu solder bumps and a Ti/Ni/Ag backside metallization, enabling high-density mounting on thin PCBs without wire bonds or leadframes.

The device operates with V_GS(th) = 0.4–0.85 V, supports logic-level drive down to 1.8 V, and integrates a source-drain body diode with V_SD = 0.7–1.2 V at I_S = 1 A and t_rr = 15–30 ns - critical for synchronous rectification and boost converter freewheeling paths.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - maximum blocking voltage compatible with 12 V and 15 V rail systems without derating.
R_DS(on) @ V_GS = 4.5 V	0.026 Ω (typ), 0.033 Ω (max) - enables <1 W conduction loss at 16 A, reducing thermal stress in compact layouts.
Q_g	7.5 nC (typ) at V_GS = 4.5 V - supports efficient 1–2 MHz switching in DC-DC converters with minimal gate driver power.
t_r/t_f	18/10 ns (typ) - ensures fast edge control to minimize overlap loss and EMI in high-frequency switching nodes.
R_thJC	7 °C/W (typ) - allows direct thermal coupling to copper planes for effective heat extraction in thermally constrained modules.
V_GS(th)	0.4–0.85 V - guarantees reliable turn-on with standard 1.8 V/2.5 V/3.3 V logic outputs, eliminating need for level shifters.
I_D (continuous)	16 A at T_C = 25 °C - supports high-current load switching in portable power rails and battery protection circuits.

Pinout & Package

MICRO FOOT® 1.5 mm × 1 mm, 0.5 mm pitch, 6-bump wafer-level chip-scale package (WLCSP) with Ti/Ni/Ag backside metallization and Sn/Ag/Cu solder bumps. Height ≤ 0.59 mm.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control input; requires <100 nA leakage current and 7.5 nC total charge for full enhancement.
2 (S)	Source	Reference node for gate drive and current return path; tied to PCB ground plane for thermal and electrical performance.
3 (S)	Source	Second source connection - paralleled internally to reduce package inductance and improve current sharing.
4 (S)	Source	Third source connection - enhances thermal conduction and reduces IR drop during high-pulse currents.
5 (D)	Drain	Main power output terminal; connected to top-side copper pour for junction-to-case heat transfer.
6 (D)	Drain	Second drain connection - lowers R_DS(on) contribution from package resistance and improves current density distribution.

Key Features

Feature	Design Value
TrenchFET® silicon process	Delivers 0.033 Ω R_DS(on) at 4.5 V in 1.5 mm × 1 mm footprint - 40% lower on-resistance than comparable SOT-23 devices.
MICRO FOOT® WLCSP	0.59 mm max height and 1.5 mm × 1 mm outline enable placement under connectors or beneath narrow PCB gaps in ultra-thin end equipment.
Logic-level gate threshold	V_GS(th) range of 0.4–0.85 V ensures robust turn-on with 1.8 V microcontroller GPIOs, eliminating external gate drivers in low-voltage systems.
Low Q_gd/Q_g ratio	Q_gd = 0.8 nC / Q_g = 7.5 nC → 10.7% - minimizes Miller effect, improving hard-switching stability in high-dV/dt environments.
Body diode t_rr	15 ns typical reverse recovery time - reduces switching losses and voltage overshoot when used as freewheeling diode in boost converters.

Applications

Smartphone Power Management	USB-C PD Load Switch
Use Scenario: High-efficiency battery discharge path control with dynamic current limiting and overtemperature shutdown. IC Role / Device Role / Timing Role: Primary N-channel load switch enabling/disabling main system power rail based on PMIC commands. Use Value: 0.033 Ω R_DS(on) limits voltage drop to <530 mV at 16 A, preserving battery runtime; 0.59 mm height fits under camera modules.	Use Scenario: Bidirectional 20 V/3 A USB-C power delivery path with reverse-current blocking and fault isolation. IC Role / Device Role / Timing Role: Low-side switch controlling VBUS path integrity during plug insertion/removal and cable orientation detection. Use Value: 1.8 V logic compatibility enables direct MCU control; 15 ns body diode t_rr prevents shoot-through during fast polarity transitions.
Wearable Battery Protection	Compact Boost Converter
Use Scenario: Overcurrent and short-circuit protection for Li-ion cells in hearables and smartwatches with <3 mm board thickness budget. IC Role / Device Role / Timing Role: Main discharge FET in integrated protection IC subsystem, switched by dedicated protection controller. Use Value: 16 A rating supports peak pulse loads up to 30 A (IDM); 0.59 mm profile allows stacking under display flex cables.	Use Scenario: High-frequency (1.5 MHz) step-up converter for white LED backlighting in AR glasses with strict EMI limits. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to improve efficiency above 85% at 500 mA output. Use Value: 7.5 nC Q_g enables low-loss 1.5 MHz operation; 18 ns rise time minimizes switching node ringing and conducted emissions.

Smartphone Power Management

USB-C PD Load Switch

Use Scenario: High-efficiency battery discharge path control with dynamic current limiting and overtemperature shutdown.

IC Role / Device Role / Timing Role: Primary N-channel load switch enabling/disabling main system power rail based on PMIC commands.

Use Value: 0.033 Ω R_DS(on) limits voltage drop to <530 mV at 16 A, preserving battery runtime; 0.59 mm height fits under camera modules.

Use Scenario: Bidirectional 20 V/3 A USB-C power delivery path with reverse-current blocking and fault isolation.

IC Role / Device Role / Timing Role: Low-side switch controlling VBUS path integrity during plug insertion/removal and cable orientation detection.

Use Value: 1.8 V logic compatibility enables direct MCU control; 15 ns body diode t_rr prevents shoot-through during fast polarity transitions.

Wearable Battery Protection

Compact Boost Converter

Use Scenario: Overcurrent and short-circuit protection for Li-ion cells in hearables and smartwatches with <3 mm board thickness budget.

IC Role / Device Role / Timing Role: Main discharge FET in integrated protection IC subsystem, switched by dedicated protection controller.

Use Value: 16 A rating supports peak pulse loads up to 30 A (IDM); 0.59 mm profile allows stacking under display flex cables.

Use Scenario: High-frequency (1.5 MHz) step-up converter for white LED backlighting in AR glasses with strict EMI limits.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to improve efficiency above 85% at 500 mA output.

Use Value: 7.5 nC Q_g enables low-loss 1.5 MHz operation; 18 ns rise time minimizes switching node ringing and conducted emissions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si8404DB-T2-E1	R_DS(on) = 0.045 Ω @ 4.5 V, 12 A I_D, same MICRO FOOT® 1.5 × 1 mm package	Lower current handling and higher on-resistance - suitable where thermal margin exceeds 2 W or peak load <12 A	Select when lower cost is prioritized over conduction loss and board space is not constrained.
DMN2020LFG-7	20 V, R_DS(on) = 0.028 Ω @ 4.5 V, 14 A, 2 mm × 2 mm DFN package, 0.65 mm height	Larger footprint and taller profile - requires additional PCB area but offers higher thermal mass and easier rework	Choose when manual assembly, test probing, or thermal cycling reliability outweighs size constraints.

Compared with SI8406DB-T2-E1, Si8404DB-T2-E1 trades 25% higher R_DS(on) for lower unit cost, while DMN2020LFG-7 provides slightly better on-resistance in a larger, more serviceable package - making SI8406DB-T2-E1 optimal for ultra-thin, high-current portable designs where every 0.1 mm and 0.005 Ω matters.

Availability

SI8406DB-T2-E1 is available at Aetrix Electronics and suitable for smartphone power management, USB-C PD load switching, and wearable battery protection requiring stable component supply across high-mix, low-volume production runs.

Supply support for SI8406DB-T2-E1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and miniaturization.

The Si8406DB belongs to Vishay's MICRO FOOT® TrenchFET® family, engineered specifically for ultra-compact, high-current load switching in space- and thermal-constrained portable electronics.

FAQ

What is the maximum continuous drain current for SI8406DB-T2-E1 at 70 °C case temperature?

The SI8406DB-T2-E1 supports 13.5 A continuous drain current at T_C = 70 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the MICRO FOOT® package under sustained power dissipation; designers must ensure adequate copper area and airflow to maintain case temperature within this limit for reliable operation.

Does SI8406DB-T2-E1 require a gate resistor for stable switching in a 1.2 MHz boost converter?

Yes - while the SI8406DB-T2-E1 has low Q_g (7.5 nC), a 2–5 Ω gate resistor is recommended to dampen ringing caused by parasitic inductance between driver and gate, especially at 1.2 MHz. The device's 0.8 nC Q_gd and fast 18 ns rise time make it susceptible to oscillation without controlled gate drive impedance.

Can SI8406DB-T2-E1 be used in reverse conduction mode (source-to-drain) for bidirectional current sensing?

No - the SI8406DB-T2-E1 is an N-channel MOSFET with an intrinsic body diode oriented from source to drain. It conducts unidirectionally in reverse bias unless actively driven; for true bidirectional switching, two SI8406DB-T2-E1 devices in series-back-to-back configuration are required, with independent gate control.

What is the thermal resistance from junction to ambient (R_thJA) for SI8406DB-T2-E1 on a standard 1" × 1" FR4 board?

The SI8406DB-T2-E1 exhibits R_thJA = 37 °C/W (typical) and 45 °C/W (maximum) when mounted on a 1" × 1" FR4 board per IPC/JEDEC J-STD-020 guidelines. This value assumes no additional heatsinking; adding 1 oz. copper pour under the drain bumps reduces R_thJA by ~15–20%, as confirmed in Vishay's thermal characterization data.

Is SI8406DB-T2-E1 compliant with JEDEC moisture sensitivity level (MSL) requirements for reflow soldering?

Yes - the SI8406DB-T2-E1 is rated MSL 1 per JEDEC J-STD-020, meaning it may be stored indefinitely at ambient conditions and withstand multiple reflow cycles up to 260 °C peak without preconditioning. Its MICRO FOOT® construction and Sn/Ag/Cu bumps are qualified for standard lead-free reflow profiles without popcorn cracking risk.

SI8406DB-T2-E1 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 6-UFBGA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 33mOhm @ 1A, 4.5V

Vgs(th) (Max) @ Id:: 850mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 8 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 830 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2.77W (Ta), 13W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-Micro Foot™ (1.5x1)

SI8406DB-T2-E1 FAQ

1.How can I place an order for SI8406DB-T2-E1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI8406DB-T2-E1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI8406DB-T2-E1 reliable?

The price and inventory of SI8406DB-T2-E1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8406DB-T2-E1 is usually 5 days.

3.What payment methods are accepted for SI8406DB-T2-E1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8406DB-T2-E1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI8406DB-T2-E1?

SI8406DB-T2-E1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI8406DB-T2-E1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI8406DB-T2-E1?

For technical support, including SI8406DB-T2-E1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8406DB-T2-E1 requirements.

6.How does Aetrix verify that SI8406DB-T2-E1 is sourced from the original manufacturer or authorized distributors?

All SI8406DB-T2-E1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8406DB-T2-E1 meets industry standards.

7.What is the process for return or replacement of SI8406DB-T2-E1?

All SI8406DB-T2-E1 units undergo pre-shipment inspection (PSI). If there is an issue with SI8406DB-T2-E1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI8406DB-T2-E1 part is unused and in its original packaging.

Return procedure for SI8406DB-T2-E1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …