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Vishay Siliconix SI8407DB-T2-E1
- Part No.:
- SI8407DB-T2-E1
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 6-MICRO FOOT®CSP
- Datasheet:
-
SI8407DB-T2-E1.pdf
- Description:
- MOSFET P-CH 20V 5.8A 6MICRO FOOT
- Quantity:
- Payment:
- Shipping:
Inventory:3,771
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Product details
Overview
SI8407DB-T2-E1 from Vishay Siliconix is a P-channel 20 V (D-S) TrenchFET® Power MOSFET in MICRO FOOT® chipscale packaging, delivering 0.027 Ω RDS(on) at VGS = −4.5 V, −8.2 A continuous drain current at TA = 25 °C, and ultra-low 0.62 mm profile for space-constrained portable load switching applications.
For engineers reviewing the SI8407DB-T2-E1 datasheet, SI8407DB-T2-E1 pinout, SI8407DB-T2-E1 application, or SI8407DB-T2-E1 equivalent, key selection factors include its −20 V VDS, low gate threshold voltage (−0.4 to −0.9 V), thermal resistance (RthJA = 72 °C/W steady-state), 6-bump MICRO FOOT package layout, and suitability for battery-switch and PA-switch circuits requiring high-density integration.
Technical Context
This device operates as a single P-channel enhancement-mode MOSFET with trench-based silicon architecture optimized for low on-resistance and fast switching. Its gate threshold voltage range (−0.4 V to −0.9 V) enables reliable turn-on with low-voltage logic control, while the integrated body diode supports reverse-current conduction in load-switch topologies.
The MICRO FOOT 6-bump package uses Sn/Ag/Cu bumps on a 0.8 mm pitch with drain-connected bumps (Pins 1, 2, 6) and dual-source terminals (Pins 3, 4, 5), enabling efficient heat transfer through the drain foot (RthJF = 15 °C/W typical) and minimizing PCB footprint in handheld electronics.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −20 V - Maximum drain-source blocking voltage for battery-switch operation up to 2-cell Li-ion systems |
| RDS(on) | 0.027 Ω at VGS = −4.5 V - Enables <150 mW conduction loss at 8 A load current |
| ID (continuous) | −8.2 A at TA = 25 °C - Supports high-current portable device power rails without forced cooling |
| VGS(th) | −0.4 to −0.9 V - Ensures robust turn-on with 1.8 V–3.3 V GPIO control signals |
| RthJA | 72 °C/W (steady-state) - Limits junction temperature rise to ~110 °C under 2.9 W dissipation on standard FR4 |
| Package | MICRO FOOT 6-bump (2.4 mm × 2.0 mm, 0.8 mm pitch) - Reduces board area by >50% vs. SO-8 while maintaining thermal performance |
| Qg | 32–50 nC - Balances switching speed and gate-drive power in battery-powered load-switch designs |
Pinout & Package
MICRO FOOT® 6-bump chipscale package (2.4 mm × 2.0 mm, 0.8 mm pitch), 0.62 mm profile, Sn/Ag/Cu bumps (Ø0.38–0.40 mm), Ti/Ni/Ag backside coating, non-solder-mask-defined pads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D) | Drain | Primary high-side power path terminal; electrically and thermally connected to exposed drain pad |
| 2 (D) | Drain | Redundant drain connection for lower RDS(on) and improved thermal spreading |
| 3 (S) | Source | Return path for load current; tied to system ground or battery negative in high-side switch |
| 4 (S) | Source | Dual-source configuration reduces source inductance and improves current sharing |
| 5 (S) | Source | Third source bump enhances thermal coupling to PCB copper and lowers RthJS |
| 6 (G) | Gate | Control input; requires ≤±8 V drive; low Qgs (3.6 nC) enables fast turn-on with minimal gate driver stress |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® silicon technology | Delivers 0.027 Ω RDS(on) at −4.5 V in 2.4 mm × 2.0 mm footprint-enabling compact, high-efficiency power switches |
| MICRO FOOT® chipscale packaging | 0.62 mm height and 4.8 mm² area reduce PCB real estate by >60% vs. SO-8, critical for thin mobile devices |
| Low gate threshold voltage | VGS(th) = −0.4 to −0.9 V ensures full enhancement with 1.8 V microcontroller I/O, eliminating level-shifter need |
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC-supports green manufacturing and global compliance requirements |
| Optimized thermal path to drain foot | RthJF = 15 °C/W typical enables direct heat transfer to PCB ground plane, improving power handling by 2× over standard packages |
Applications
| Smartphone Battery Switch | Wireless Headset PA Switch |
|---|---|
Use Scenario: High-side disconnect between Li-ion battery and system power rail during sleep or fault conditions. IC Role / Device Role / Timing Role: P-channel load switch controlling main power domain entry/exit with <1 µA quiescent current in off-state. Use Value: 0.027 Ω RDS(on) limits voltage drop to <220 mV at 8 A, preserving battery runtime and enabling precise current sensing. | Use Scenario: Enabling/disabling RF power amplifier supply in Bluetooth audio devices to minimize standby leakage. IC Role / Device Role / Timing Role: Fast-turning P-channel switch synchronized with baseband processor enable signal for zero-power idle mode. Use Value: −0.4 V VGS(th) allows direct GPIO control from 1.8 V SoC, eliminating external bias circuitry and saving BOM cost. |
| Tablet USB-C Load Switch | Wearable Health Monitor Power Gate |
Use Scenario: Isolating USB-C VBUS path during hot-plug detection or overcurrent events in portable computing. IC Role / Device Role / Timing Role: High-speed, low-RDS(on) power switch placed between connector and PMIC input with <50 ns turn-off delay. Use Value: 550–825 ns td(off) and 220–330 ns tf support rapid fault response, meeting USB PD 3.0 safety timing requirements. | Use Scenario: Gating power to ECG/PPG sensor subsystems during intermittent measurement cycles in battery-powered wearables. IC Role / Device Role / Timing Role: Ultra-low-profile load switch managing sub-100 µA sleep current and <10 µs wake-up latency. Use Value: MICRO FOOT 2.4 mm × 2.0 mm footprint fits within tight 3 mm × 3 mm wearable PCB zones while maintaining thermal margin. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8405DB-T2-E1 | Lower RDS(on) (0.022 Ω @ −4.5 V) but reduced ID rating (−6.5 A); identical MICRO FOOT package | Better efficiency at lower currents (<5 A); less margin for peak battery loads | Select when optimizing for <5 A continuous loads and minimal conduction loss is primary |
| DMN2020LSD-13 | Higher RDS(on) (0.045 Ω @ −4.5 V), larger TSOP-6 package (3.05 mm × 1.65 mm), higher RthJA (100 °C/W) | Less board-area efficient; requires more PCB copper for thermal management | Select when legacy TSOP-6 footprint compatibility is required and 0.62 mm height is not constrained |
Compared with SI8407DB-T2-E1, Si8405DB-T2-E1 trades current capacity for lower on-resistance in the same footprint, while DMN2020LSD-13 offers comparable voltage rating but sacrifices size, thermal performance, and efficiency-making SI8407DB-T2-E1 optimal for next-gen portable designs demanding density and thermal headroom.
Availability
SI8407DB-T2-E1 is available at Aetrix Electronics and suitable for smartphone battery switching, wireless headset PA control, and tablet USB-C load management requiring stable component supply across high-volume consumer electronics programs.
Supply support for SI8407DB-T2-E1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and miniaturization.
The Si8407DB product line delivers high-performance P-channel TrenchFET MOSFETs in MICRO FOOT packages for space- and thermally constrained portable power management applications.
FAQ
What is the maximum continuous drain current for SI8407DB-T2-E1 at 70 °C ambient temperature?
The SI8407DB-T2-E1 supports −6.5 A continuous drain current at TA = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the MICRO FOOT package under natural convection on standard FR4; PCB copper area and airflow significantly influence actual achievable current.
Does SI8407DB-T2-E1 require a gate pull-up resistor in high-side switch configurations?
Yes, SI8407DB-T2-E1 requires an external gate pull-up resistor to VIN (battery) in high-side switch applications to ensure reliable turn-off when the driving GPIO goes high-impedance. The device's negative VGS(th) means gate must be pulled to source potential (VIN) to disable conduction; typical values range from 10 kΩ to 100 kΩ depending on switching speed requirements.
Is SI8407DB-T2-E1 compatible with lead-free reflow soldering processes?
Yes, SI8407DB-T2-E1 is qualified for lead-free reflow per IPC/JEDEC J-STD-020, with peak reflow temperature of 260 °C. The MICRO FOOT package uses Sn/Ag/Cu bumps and is rated for IR and convection reflow only-manual or hand soldering is not recommended per Vishay specification.
What is the typical gate charge (Qg) of SI8407DB-T2-E1 and how does it affect switching performance?
The SI8407DB-T2-E1 has a total gate charge (Qg) of 32–50 nC at VDS = −10 V and VGS = −4.5 V. This moderate Qg enables fast switching (td(on) = 30–45 ns, tf = 220–330 ns) with low-power gate drivers, reducing dynamic losses in portable load-switch applications operating at 10–100 kHz.
Can SI8407DB-T2-E1 be used in bidirectional current applications such as USB OTG power negotiation?
No, SI8407DB-T2-E1 is a unidirectional P-channel MOSFET intended for high-side load switching only. Its body diode conducts from source to drain (S→D), making it unsuitable for true bidirectional current flow. For USB OTG or reverse-current blocking, a back-to-back MOSFET configuration or dedicated bidirectional load switch IC is required.
SI8407DB-T2-E1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 6-MICRO FOOT®CSP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 27mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id:
- 900mV @ 350µA
- Gate Charge (Qg) (Max) @ Vgs:
- 50 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.47W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-Micro Foot™ (2.4x2)
SI8407DB-T2-E1 FAQ
1.How can I place an order for SI8407DB-T2-E1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI8407DB-T2-E1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI8407DB-T2-E1 reliable?
The price and inventory of SI8407DB-T2-E1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8407DB-T2-E1 is usually 5 days.
3.What payment methods are accepted for SI8407DB-T2-E1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8407DB-T2-E1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI8407DB-T2-E1?
SI8407DB-T2-E1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI8407DB-T2-E1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI8407DB-T2-E1?
For technical support, including SI8407DB-T2-E1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8407DB-T2-E1 requirements.
6.How does Aetrix verify that SI8407DB-T2-E1 is sourced from the original manufacturer or authorized distributors?
All SI8407DB-T2-E1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8407DB-T2-E1 meets industry standards.
7.What is the process for return or replacement of SI8407DB-T2-E1?
All SI8407DB-T2-E1 units undergo pre-shipment inspection (PSI). If there is an issue with SI8407DB-T2-E1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI8407DB-T2-E1 part is unused and in its original packaging.
Return procedure for SI8407DB-T2-E1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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