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Vishay Siliconix SI8410DB-T2-E1
- Part No.:
- SI8410DB-T2-E1
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 4-UFBGA
- Datasheet:
-
SI8410DB-T2-E1.pdf
- Description:
- MOSFET N-CH 20V 4MICRO FOOT
- Quantity:
- Payment:
- Shipping:
Inventory:5,890
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Product details
Overview
SI8410DB-T2-E1 from Vishay Siliconix is an N-channel 20 V TrenchFET® power MOSFET in MICRO FOOT® 1 mm × 1 mm package, delivering RDS(on) = 0.037 Ω at VGS = 4.5 V and supporting 5.7 A continuous drain current at TA = 25 °C. It serves as a high-efficiency load switch in space-constrained power management circuits.
For engineers reviewing the SI8410DB-T2-E1 datasheet, SI8410DB-T2-E1 pinout, SI8410DB-T2-E1 application, or SI8410DB-T2-E1 equivalent, this page provides verified package mapping, thermal resistance data (RthJA = 70 °C/W max), gate charge (Qg = 5.9 nC at 4.5 V), body diode recovery (trr = 15–30 ns), and validated alternatives for compact DC-DC and battery-switching designs.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low RDS(on) and fast switching in ultra-thin, lead-free MICRO FOOT® packaging. Its gate threshold voltage (VGS(th) = 0.4–0.85 V) enables compatibility with 1.8 V and 2.5 V logic-level drive, while its low Qgd/Qg ratio (0.66/5.9 nC) supports clean turn-off in high-frequency load switching.
The device features a monolithic source-drain body diode with VSD = 0.7–1.2 V at IS = 1.5 A and Qrr = 6–15 nC, making it suitable for synchronous rectification and bidirectional current paths where reverse recovery behavior must be tightly controlled.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum blocking voltage for 3.3 V/5 V rail protection and battery-input switching. |
| RDS(on) @ 4.5 V | 0.037 Ω - Enables ≤210 mW conduction loss at 5.7 A, critical for thermally limited PCB layouts. |
| Qg | 5.9 nC - Low gate charge reduces driver power and allows use with microcontroller GPIOs without external buffers. |
| tr/tf | 25/10 ns - Fast edge rates support >1 MHz PWM operation in compact DC-DC converters. |
| RthJA (max) | 70 °C/W - Thermal performance on full-copper FR4 enables 1.1 W dissipation at 70 °C ambient without heatsinking. |
| VGS(th) | 0.4–0.85 V - Ensures reliable turn-on with 1.8 V logic, eliminating need for level-shifting in low-voltage systems. |
| ID (cont) | 5.7 A @ 25 °C - Sustains high peak loads in portable power rails and USB-C PD sink applications. |
Pinout & Package
MICRO FOOT® 1 mm × 1 mm package with 4 solder bumps (0.5 mm pitch); bump-side-down mounting; backside marked "8410" and lot code. Package height ≤0.548 mm enables co-placement under connectors or shields.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Bump) | Source | Primary current return path; electrically tied to exposed die backside for lowest inductance and thermal path. |
| 2 (Bump) | Source | Second parallel source connection to reduce RDS(on) and improve current sharing in high-current paths. |
| 3 (Bump) | Drain | Main power output node; connected directly to die top metallization; requires thermal pad on PCB for heat transfer. |
| 4 (Bump) | Gate | Control input; sensitive to ESD (±8 V rating); layout must minimize trace inductance to prevent ringing during fast switching. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 30% lower RDS(on) vs. planar MOSFETs of same die size, enabling higher current density in 1 mm² footprint. |
| MICRO FOOT® 1 × 1 mm | Reduces board area by >75% vs. SO-8 or TSOP-6, allowing placement in tight spaces like wearable battery compartments. |
| Ultra-thin 0.548 mm profile | Permits stacking under low-profile connectors or beneath display modules without mechanical interference. |
| Lead-free and halogen-free | Meets IPC/JEDEC J-STD-020 reflow standards (260 °C peak) and RoHS/REACH compliance for global manufacturing. |
| Body diode trr = 15–30 ns | Minimizes reverse recovery losses in synchronous buck stages, improving efficiency over discrete Schottky alternatives. |
Applications
| Battery Protection Circuit | USB-C Power Delivery Sink |
|---|---|
Use Scenario: Isolating main Li-ion cell from system during overvoltage or short-circuit events. IC Role / Device Role / Timing Role: High-side load switch controlled by protection IC to disconnect battery within <100 μs. Use Value: Low RDS(on) limits voltage drop to <210 mV at 5.7 A, preserving battery runtime; fast tf ensures rapid fault isolation. |
Use Scenario: Enabling/disabling 5–20 V power path from USB-C port to system PMIC based on CC logic. IC Role / Device Role / Timing Role: Logic-level-controlled power switch responding to MCU GPIO signals at 3.3 V. Use Value: VGS(th) ≤0.85 V guarantees turn-on with 1.8 V/3.3 V IO; 0.548 mm height avoids interference with USB-C connector height. |
| Portable Medical Sensor Node | Low-Power IoT Edge Module |
Use Scenario: Sequencing power to analog front-end, RF transceiver, and MCU subsystems during wake-up. IC Role / Device Role / Timing Role: Controlled power gate activated by real-time clock interrupt to minimize standby leakage. Use Value: IDSS ≤1 μA at 20 V ensures <100 nA system standby current contribution; small footprint saves space on 2-layer PCBs. |
Use Scenario: Managing power to BLE SoC and environmental sensors in coin-cell–powered asset trackers. IC Role / Device Role / Timing Role: Load switch toggled by microcontroller to cycle peripherals and extend battery life. Use Value: Qg = 5.9 nC enables full turn-on in <1 μs using standard GPIO, reducing active time and energy per wake cycle. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8410BD-T1-E3 | Same die, tape-and-reel variant with different packaging (7-inch reel vs. 13-inch); identical electrical specs and MICRO FOOT® 1×1 package. | No functional difference; selected when procurement requires smaller reel size or legacy inventory alignment. | Drop-in replacement for SI8410DB-T2-E1 in new designs if reel logistics favor 7-inch format. |
| DMN2016LFG-7 | Diodes Inc. 20 V N-channel MOSFET; RDS(on) = 0.032 Ω @ 4.5 V, but in 1.6 × 1.6 mm SOT-23-3 package - 2.56× larger footprint. | Higher thermal resistance (RthJA ≈ 150 °C/W) limits continuous current to ~2.5 A on same PCB layout. | Use only when MICRO FOOT® assembly capability is unavailable; expect 30% larger board area and reduced power density. |
Compared with SI8410DB-T2-E1, Si8410BD-T1-E3 offers identical performance in a different reel configuration, while DMN2016LFG-7 trades superior RDS(on) for significantly larger footprint and poorer thermal performance-making SI8410DB-T2-E1 optimal for miniaturized, thermally constrained designs.
Availability
SI8410DB-T2-E1 is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery sinks, and portable medical sensor nodes requiring stable component supply and long-term manufacturability.
Supply support for SI8410DB-T2-E1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and miniaturization.
The SI8410DB series belongs to Vishay's MICRO FOOT® TrenchFET® portfolio, engineered specifically for ultra-compact, high-current load switching in portable and wearables applications where board space and thermal headroom are severely constrained.
FAQ
What is the maximum continuous drain current for SI8410DB-T2-E1 at 70 °C ambient temperature?
The SI8410DB-T2-E1 supports 4.5 A continuous drain current at TA = 70 °C when mounted on a 1" × 1" FR4 board with full copper. This rating is derived from its RthJA = 70 °C/W maximum and TJ(max) = 150 °C limit, ensuring safe operation without derating in thermally managed handheld designs. The SI8410DB-T2-E1 maintains stable RDS(on) up to 125 °C junction temperature.
Does SI8410DB-T2-E1 require a gate resistor for typical 3.3 V GPIO switching?
While the SI8410DB-T2-E1 can be driven directly by 3.3 V microcontroller GPIOs due to its low VGS(th), a 10 Ω gate resistor is recommended to dampen ringing caused by its 5.9 nC Qg and low gate impedance. This prevents false triggering and reduces EMI in densely routed PCBs. The SI8410DB-T2-E1 gate structure tolerates ±8 V, so minor overshoot remains within safe limits.
Can SI8410DB-T2-E1 be used in reverse conduction mode (source-to-drain)?
Yes-the SI8410DB-T2-E1 integrates a monolithic body diode rated for 1.5 A continuous and 20 A pulsed source-drain current, with VSD = 0.7–1.2 V and trr = 15–30 ns. This makes the SI8410DB-T2-E1 suitable for bidirectional power paths such as battery charging/discharging circuits, provided reverse voltage does not exceed 20 V and thermal limits are observed.
What is the reflow profile compliance for SI8410DB-T2-E1?
The SI8410DB-T2-E1 complies with IPC/JEDEC J-STD-020 moisture sensitivity level 1 and supports peak reflow temperatures up to 260 °C for lead-free processes. Its MICRO FOOT® package uses Sn/Ag/Cu bumps and Ti/Ni/Ag backside plating, ensuring robust solder joint integrity. The SI8410DB-T2-E1 must not be hand-soldered-reflow-only assembly is required per Vishay specification S15-1510-Rev. B.
How does the thermal performance of SI8410DB-T2-E1 compare between full-copper and minimum-copper PCBs?
On a 1" × 1" FR4 board with full copper, the SI8410DB-T2-E1 achieves RthJA = 70 °C/W (max), enabling 1.1 W dissipation at 70 °C ambient. With minimum copper, RthJA degrades to 160 °C/W (max), limiting usable power to 0.5 W. This 2.3× thermal penalty means the SI8410DB-T2-E1 must be placed over solid ground planes in high-power applications to avoid exceeding TJ = 150 °C.
SI8410DB-T2-E1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 4-UFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 37mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 850mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 16 nC @ 8 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 620 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 780mW (Ta), 1.8W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 4-Micro Foot (1x1)
SI8410DB-T2-E1 FAQ
1.How can I place an order for SI8410DB-T2-E1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI8410DB-T2-E1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI8410DB-T2-E1 reliable?
The price and inventory of SI8410DB-T2-E1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8410DB-T2-E1 is usually 5 days.
3.What payment methods are accepted for SI8410DB-T2-E1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8410DB-T2-E1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI8410DB-T2-E1?
SI8410DB-T2-E1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI8410DB-T2-E1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI8410DB-T2-E1?
For technical support, including SI8410DB-T2-E1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8410DB-T2-E1 requirements.
6.How does Aetrix verify that SI8410DB-T2-E1 is sourced from the original manufacturer or authorized distributors?
All SI8410DB-T2-E1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8410DB-T2-E1 meets industry standards.
7.What is the process for return or replacement of SI8410DB-T2-E1?
All SI8410DB-T2-E1 units undergo pre-shipment inspection (PSI). If there is an issue with SI8410DB-T2-E1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI8410DB-T2-E1 part is unused and in its original packaging.
Return procedure for SI8410DB-T2-E1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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