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Vishay Siliconix SI8413DB-T1-E1
- Part No.:
- SI8413DB-T1-E1
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 4-XFBGA, CSPBGA
- Datasheet:
-
SI8413DB-T1-E1.pdf
- Description:
- MOSFET P-CH 20V 4.8A 4MICROFOOT
- Quantity:
- Payment:
- Shipping:
Inventory:5,167
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Product details
Overview
SI8413DB-T1-E1 from Vishay Siliconix is a P-channel enhancement-mode MOSFET in MICRO FOOT® 1.6 mm × 1.6 mm chipscale package, rated for -20 V VDS, 0.048 Ω RDS(on) at VGS = -4.5 V, and -6.5 A continuous drain current at TA = 25 °C. It serves as a compact, low-profile load or battery switch in space-constrained portable electronics.
For engineers reviewing the SI8413DB-T1-E1 datasheet, SI8413DB-T1-E1 pinout, SI8413DB-T1-E1 application, or SI8413DB-T1-E1 equivalent, key selection criteria include its ultra-low footprint, verified thermal performance via RthJF = 16 °C/W (steady state), and guaranteed gate threshold voltage range of -0.6 V to -1.4 V at ID = -250 µA.
Technical Context
This device uses trench-based silicon process architecture to achieve high channel density and low on-resistance per unit area. Its gate structure supports stable operation down to VGS = -2.5 V, enabling direct interface with 2.5 V logic controllers without level shifting.
The MICRO FOOT® package integrates solder bumps directly on the die active surface, eliminating wire bonds and leadframes. Thermal path from junction to PCB foot is optimized via direct copper bump contact, yielding RthJF = 16 °C/W - critical for sustained pulsed switching in battery-powered systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum reverse drain-source blocking capability for battery-side switching up to 2-cell Li-ion systems |
| RDS(on) | 0.048 Ω at VGS = -4.5 V - Enables <100 mW conduction loss at 6.5 A, supporting high-efficiency power path control |
| ID (continuous) | -6.5 A at TA = 25 °C - Sustained load switching capacity on standard FR4 with minimal heatsinking |
| Qg | 14 nC typical - Low gate charge reduces drive power and enables fast turn-on/turn-off (td(on) = 31 ns) |
| VGS(th) | -0.6 V to -1.4 V - Guaranteed turn-on threshold compatible with 2.5 V and 3.3 V microcontroller GPIOs |
| RthJF | 16 °C/W (steady state) - Direct junction-to-PCB thermal path minimizes temperature rise under continuous load |
| Package | MICRO FOOT® 1.6 mm × 1.6 mm - 4-bump chipscale footprint with 0.8 mm pitch, 0.29 mm bump height |
Pinout & Package
MICRO FOOT® 1.6 mm × 1.6 mm chipscale package with four solder bumps on active die surface; no molded plastic body; backside marked "8413" and orientation indicator.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal accepting negative VGS; requires no external pull-up for default-off operation |
| 2 (D) | Drain | High-side connection point; electrically tied to PCB copper foot for thermal and electrical return path |
| 3 (D) | Drain | Second drain bump - parallel connection to Pin 2 for reduced current density and lower RDS(on) contribution |
| 4 (S) | Source | Reference node for gate drive; connects to system ground or battery negative in high-side switch configurations |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® silicon process | Delivers 23% lower RDS(on) per mm² vs. planar P-channel MOSFETs at same voltage rating |
| MICRO FOOT® packaging | Reduces board area by 80% vs. TSSOP-8 while maintaining comparable thermal resistance to ambient |
| Guaranteed VGS(th) range | Ensures reliable turn-on across full temperature range (-55 °C to 150 °C) with 2.5 V logic drivers |
| Low Qgd/Qg ratio | 0.36 (5.1/14 nC) - improves switching efficiency and reduces Miller-induced shoot-through risk |
| Integrated body diode | VSD = -0.8 V at IS = -1 A - supports synchronous rectification and reverse-current blocking in charger paths |
Applications
| Battery Protection Circuit | USB Power Delivery Switch |
|---|---|
Use Scenario: Bidirectional overvoltage/overcurrent protection between battery pack and system bus in smartphones and wearables. IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side disconnect switch, controlled by protection IC to isolate battery during fault conditions. Use Value: Ultra-low RDS(on) limits voltage drop to <315 mV at 6.5 A, preserving battery runtime; MICRO FOOT® footprint allows placement adjacent to battery connector without routing congestion. | Use Scenario: Dynamic power path management in USB-C PD adapters, enabling seamless transition between adapter input and internal battery supply. IC Role / Device Role / Timing Role: Load switch controlling power delivery to downstream DC-DC converters; driven by PD controller's GPIO with 2.5 V logic levels. Use Value: Verified -1.4 V VGS(th) max ensures robust turn-on even with degraded gate drive; low Qg enables <100 ns switching transitions for fast fault response. |
| Wireless Earbud Charging Case | Portable Medical Sensor Hub |
Use Scenario: Isolating lithium-polymer battery from charging circuitry during wireless charging cycles to prevent reverse current leakage. IC Role / Device Role / Timing Role: Battery-side switch placed between battery anode and linear charger IC; activated only during active charging. Use Value: 0.063 Ω RDS(on) at VGS = -2.5 V eliminates need for level-shifter; 0.62 mm profile fits within 4 mm-thick case height constraints. | Use Scenario: Enabling/disabling power to analog front-end and BLE radio subsystems in FDA-cleared wearable ECG monitors. IC Role / Device Role / Timing Role: Low-quiescent-current load switch providing controlled power sequencing and leakage isolation during sleep mode. Use Value: IDSS ≤ -1 µA at VDS = -20 V ensures <10 nA standby leakage per switch - critical for multi-week battery life in clinical-grade devices. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8411DB-T1-E1 | VDS = -20 V, RDS(on) = 0.075 Ω @ -4.5 V, ID = -4.8 A - higher on-resistance, lower current rating | Lower power handling; suitable where peak load <5 A and board space allows marginally larger thermal footprint | Select when lower cost is prioritized over conduction loss and thermal performance |
| DMN2013LFG-7 | VDS = -20 V, RDS(on) = 0.042 Ω @ -4.5 V, but in 2 mm × 2 mm TSOP-6 package - 56% larger footprint, higher RthJA | Compatible with legacy TSOP-6 land patterns; better suited for manual rework or mixed-technology boards | Select when compatibility with existing TSOP-6 layouts or simplified assembly outweighs size/thermal advantages |
Compared with SI8413DB-T1-E1, Si8411DB-T1-E1 trades 25% higher RDS(on) for lower unit cost, while DMN2013LFG-7 offers marginally lower on-resistance but sacrifices 56% board area and delivers 2.2× higher junction-to-ambient thermal resistance - making SI8413DB-T1-E1 optimal for ultra-compact, thermally constrained designs requiring >6 A continuous switching.
Availability
SI8413DB-T1-E1 is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, wireless earbud charging cases, and portable medical sensor hubs requiring stable component supply across high-volume production ramps.
Supply support for SI8413DB-T1-E1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and miniaturization.
The Si8413DB-T1-E1 belongs to Vishay's MICRO FOOT® trench MOSFET product line, engineered specifically for space- and thermally constrained battery-powered consumer and medical electronics where traditional packaged devices cannot meet form factor or thermal targets.
FAQ
What is the maximum allowable gate-source voltage for SI8413DB-T1-E1?
The absolute maximum gate-source voltage for SI8413DB-T1-E1 is ±12 V, as specified in the Absolute Maximum Ratings table. Operation beyond this limit risks permanent gate oxide damage. For reliable long-term use, design gate drive circuits to clamp VGS within -10 V to +10 V, especially during transient events such as hot-plug or ESD exposure. The SI8413DB-T1-E1 gate structure is optimized for -4.5 V and -2.5 V logic-level drive, not high-voltage gate biasing.
Does SI8413DB-T1-E1 require a gate resistor for stable switching?
SI8413DB-T1-E1 does not require a gate resistor for basic functionality, but a 1–10 Ω series gate resistor is recommended to dampen ringing caused by PCB trace inductance interacting with its 14 nC total gate charge and low gate impedance. Without damping, oscillations can exceed ±12 V VGS limits during fast edge transitions. The SI8413DB-T1-E1's low Qgd/Qg ratio helps suppress Miller effects, but layout-dependent parasitics still necessitate controlled gate drive impedance.
Can SI8413DB-T1-E1 be used in a synchronous rectifier configuration?
SI8413DB-T1-E1 is not designed or characterized for synchronous rectification. Its body diode forward voltage (VSD = -0.8 V typ. at -1 A) and reverse recovery time (trr = 85 ns) are specified for freewheeling and clamping roles, not high-frequency bidirectional conduction. The SI8413DB-T1-E1 lacks dual-gate control, adaptive dead-time management, or reverse-conduction SOA validation required for synchronous rectifier operation in buck or flyback topologies.
What is the thermal resistance from junction to PCB foot (RthJF) for SI8413DB-T1-E1?
The steady-state junction-to-foot thermal resistance (RthJF) for SI8413DB-T1-E1 is 16 °C/W, measured under standard JEDEC test conditions on 1" × 1" FR4 board. This value reflects the direct thermal path from silicon junction through solder bumps to the PCB copper layer, bypassing traditional package molding compound. It enables accurate thermal modeling of power dissipation in SI8413DB-T1-E1-based designs without relying on less predictable junction-to-ambient metrics.
Is SI8413DB-T1-E1 suitable for automotive applications?
SI8413DB-T1-E1 is not qualified to AEC-Q101 or automotive PPAP requirements and is intended for commercial and industrial applications only. While its operating junction temperature range (-55 °C to +150 °C) overlaps with automotive ambient conditions, it lacks automotive-specific reliability testing (e.g., HTSL, uHAST, temperature cycling), failure-in-time (FIT) data, and change notification protocols. For automotive use, consider Vishay's AEC-Q101-qualified alternatives such as SQ2318CES-T1_GE3, not SI8413DB-T1-E1.
SI8413DB-T1-E1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 4-XFBGA, CSPBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 48mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 21 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.47W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 4-Microfoot
SI8413DB-T1-E1 FAQ
1.How can I place an order for SI8413DB-T1-E1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI8413DB-T1-E1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI8413DB-T1-E1 reliable?
The price and inventory of SI8413DB-T1-E1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8413DB-T1-E1 is usually 5 days.
3.What payment methods are accepted for SI8413DB-T1-E1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8413DB-T1-E1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI8413DB-T1-E1?
SI8413DB-T1-E1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI8413DB-T1-E1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI8413DB-T1-E1?
For technical support, including SI8413DB-T1-E1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8413DB-T1-E1 requirements.
6.How does Aetrix verify that SI8413DB-T1-E1 is sourced from the original manufacturer or authorized distributors?
All SI8413DB-T1-E1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8413DB-T1-E1 meets industry standards.
7.What is the process for return or replacement of SI8413DB-T1-E1?
All SI8413DB-T1-E1 units undergo pre-shipment inspection (PSI). If there is an issue with SI8413DB-T1-E1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI8413DB-T1-E1 part is unused and in its original packaging.
Return procedure for SI8413DB-T1-E1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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