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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI8424CDB-T1-E1

Name: SI8424CDB-T1-E1
Brand: Vishay Siliconix
SKU: SI8424CDB-T1-E1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI8424CDB-T1-E1

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 4-UFBGA, WLCSP

Datasheet:: SI8424CDB-T1-E1.pdf

Description:: MOSFET N-CH 8V 4MICROFOOT

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Product details

Overview

SI8424CDB-T1-E1 from Vishay Siliconix is an N-channel TrenchFET® power MOSFET in a MICRO FOOT® 1.6 mm × 1.6 mm wafer-level chip-scale package, rated for 8 V drain-source voltage, 10 A continuous drain current (T_J = 150 °C, full-copper board), and 25 nC total gate charge. It delivers 0.020 Ω R_DS(on) at V_GS = 4.5 V and serves as a low-voltage load switch in space-constrained mobile computing applications.

For engineers reviewing the SI8424CDB-T1-E1 datasheet, SI8424CDB-T1-E1 pinout, SI8424CDB-T1-E1 application, or SI8424CDB-T1-E1 equivalent, key selection criteria include ultra-thin 0.6 mm height, 0.8 mm bump pitch, body diode reverse recovery time of 40–80 ns, thermal resistance R_thJA as low as 35 °C/W (full copper), and compatibility with lead-free reflow per J-STD-020.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low R_DS(on) at gate voltages down to 1.2 V, enabling direct interface with 1.8 V and 2.5 V logic controllers. Its WL-CSP construction eliminates wire bonds and plastic encapsulation, reducing parasitic inductance and improving thermal coupling to the PCB.

The device features a symmetric 4-bump layout (G, S, D, D) with Ti/Ni/Ag backside metallization and Sn/Ag/Cu eutectic solder bumps. Gate threshold voltage is specified at 0.35–0.8 V (V_GS(th)), supporting robust turn-on control in battery-powered systems where supply rails may sag below 3.3 V.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	8 V - Maximum blocking voltage compatible with single-cell Li-ion (4.2 V max) and dual-cell NiMH (3.0 V max) systems.
R_DS(on) @ V_GS = 4.5 V	0.020 Ω - Enables ≤20 mV conduction drop at 1 A, minimizing power loss in portable load-switching paths.
I_D (continuous)	10 A - Rated under JEDEC-standard 1"×1" FR4 board with full copper; derates to 5.1 A at 70 °C ambient.
Q_g (total gate charge)	25 nC - Supports fast switching with moderate drive strength; enables <30 ns turn-on delay using 1 Ω gate resistor.
V_GS(th)	0.35–0.8 V - Ensures reliable enhancement-mode turn-on with 1.2 V–1.8 V microcontroller GPIOs without level shifting.
R_thJA (max)	45 °C/W - Thermal resistance enables 2.7 W dissipation at 25 °C ambient on standard PCB; critical for thermally dense mobile layouts.
V_SD (body diode)	0.7–1.2 V - Low forward voltage supports bidirectional current flow in buck converter synchronous rectification or reverse-polarity protection.

Pinout & Package

MICRO FOOT® 1.6 mm × 1.6 mm wafer-level chip-scale package with 4 solder bumps (0.8 mm pitch, 0.29 mm bump height), no leads or mold compound. Backside marked "8424C" and die identification.

Pin/Terminal	Circuit Role	Design Meaning
1 (Bump)	Gate (G)	Control terminal; accepts logic-level gate drive; requires no external pull-down for default-off operation due to V_GS(th) > 0 V.
2 (Bump)	Source (S)	Reference node for gate drive and current return path; electrically tied to PCB ground plane for lowest inductance.
3 (Bump)	Drain (D)	Main power output terminal; connects to load or high-side rail; two parallel bumps (3 & 4) share drain current to reduce resistance and thermal stress.
4 (Bump)	Drain (D)	Second drain connection; identical to Pin 3; enables symmetrical current distribution and improved thermal spreading across PCB copper.

Key Features

Feature	Design Value
TrenchFET® silicon process	Delivers industry-leading R_DS(on) × Q_g figure-of-merit for 8 V MOSFETs, enabling high-efficiency switching at sub-2 V gate drive.
Ultra-thin 0.6 mm profile	Reduces Z-height in stacked PCB assemblies and enables integration beneath compact camera modules or display flex cables.
WL-CSP construction	Eliminates bond wires and package parasitics, yielding <600 pF C_oss and <25 ns fall time for clean edge control in high-frequency load switching.
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709C; suitable for consumer electronics with strict environmental compliance requirements.
Body diode t_rr = 40–80 ns	Supports synchronous rectification in DC-DC converters up to ~2 MHz without significant reverse recovery loss or ringing.

Applications

Smartphone Power Management	Tablet PC Load Switching
Use Scenario: Enabling/disabling USB OTG power rail or auxiliary sensor subsystems during sleep mode. IC Role / Device Role / Timing Role: Low-side load switch controlling 3.3 V or 1.8 V domain power sequencing with <100 ns response time. Use Value: 0.020 Ω R_DS(on) limits dropout to <20 mV at 1 A, preserving voltage margin for sensitive analog sensors.	Use Scenario: Isolating main SoC core voltage domain from peripheral I/O rails during dynamic DVFS transitions. IC Role / Device Role / Timing Role: High-current (up to 9.7 A) power switch activated by PMIC-controlled GPIO with 25 nC Q_g ensuring minimal drive burden. Use Value: 0.6 mm height allows placement under thin-film shielding layers, saving board area in slim tablet form factors.
Mobile SSD Power Gating	Wearable Battery Protection
Use Scenario: Disconnecting NAND flash memory array during deep-sleep states to eliminate leakage current. IC Role / Device Role / Timing Role: Ultra-low R_DS(on) (0.023 Ω @ 1.8 V) enables efficient gating of 1.2 V–1.8 V V_CC rails without external level shifters. Use Value: 1.6 mm × 1.6 mm footprint fits within tight spacing between BGA pads of UFS controller and NAND packages.	Use Scenario: Reverse-current blocking in coin-cell–powered health monitors to prevent battery drain through inactive circuits. IC Role / Device Role / Timing Role: Low-threshold (0.35 V min) N-channel switch used in ideal diode configuration with external sense resistor. Use Value: V_GS(th) specification ensures turn-on at ≥0.8 V battery voltage, extending usable runtime below 1.0 V cutoff.

Smartphone Power Management

Tablet PC Load Switching

Use Scenario: Enabling/disabling USB OTG power rail or auxiliary sensor subsystems during sleep mode.

IC Role / Device Role / Timing Role: Low-side load switch controlling 3.3 V or 1.8 V domain power sequencing with <100 ns response time.

Use Value: 0.020 Ω R_DS(on) limits dropout to <20 mV at 1 A, preserving voltage margin for sensitive analog sensors.

Use Scenario: Isolating main SoC core voltage domain from peripheral I/O rails during dynamic DVFS transitions.

IC Role / Device Role / Timing Role: High-current (up to 9.7 A) power switch activated by PMIC-controlled GPIO with 25 nC Q_g ensuring minimal drive burden.

Use Value: 0.6 mm height allows placement under thin-film shielding layers, saving board area in slim tablet form factors.

Mobile SSD Power Gating

Wearable Battery Protection

Use Scenario: Disconnecting NAND flash memory array during deep-sleep states to eliminate leakage current.

IC Role / Device Role / Timing Role: Ultra-low R_DS(on) (0.023 Ω @ 1.8 V) enables efficient gating of 1.2 V–1.8 V V_CC rails without external level shifters.

Use Value: 1.6 mm × 1.6 mm footprint fits within tight spacing between BGA pads of UFS controller and NAND packages.

Use Scenario: Reverse-current blocking in coin-cell–powered health monitors to prevent battery drain through inactive circuits.

IC Role / Device Role / Timing Role: Low-threshold (0.35 V min) N-channel switch used in ideal diode configuration with external sense resistor.

Use Value: V_GS(th) specification ensures turn-on at ≥0.8 V battery voltage, extending usable runtime below 1.0 V cutoff.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si8422CDB-T1-E1	Same package and pinout; lower R_DS(on) (0.015 Ω @ 4.5 V) but higher Q_g (32 nC); V_DS = 6 V rating.	Preferred for <6 V systems requiring lowest conduction loss; unsuitable for 8 V input rails or transient overvoltage conditions.	Select when system V_IN is strictly ≤6 V and gate drive strength permits higher Q_g.
DMN10H8TFA-7	Same 8 V rating and 1.6 mm × 1.6 mm DFN package; R_DS(on) = 0.022 Ω @ 4.5 V; higher V_GS(th) (0.5–1.2 V); not halogen-free.	Better suited for industrial environments where halogen-free compliance is non-mandatory; less tolerant of weak gate drive.	Choose if RoHS exemption applies and gate voltage margin exceeds 1.2 V.

Compared with SI8424CDB-T1-E1, Si8422CDB-T1-E1 offers lower on-resistance but reduced voltage headroom, while DMN10H8TFA-7 provides comparable performance with relaxed environmental compliance-making SI8424CDB-T1-E1 optimal for consumer mobile designs demanding 8 V tolerance, ultra-low profile, and full RoHS adherence.

Availability

SI8424CDB-T1-E1 is available at Aetrix Electronics and suitable for smartphone power management, tablet PC load switching, mobile SSD power gating, and wearable battery protection requiring stable component supply and long-term lifecycle support.

Supply support for SI8424CDB-T1-E1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, miniaturized packaging.

The MICRO FOOT® product line was developed specifically for ultra-compact, thermally efficient power switching in battery-powered portable electronics, leveraging wafer-level CSP to eliminate traditional package limitations.

FAQ

What is the maximum junction temperature rating for SI8424CDB-T1-E1?

The SI8424CDB-T1-E1 has an operating junction temperature range of –55 °C to +150 °C. This rating is validated per JEDEC standards and enables reliable operation in handheld devices where internal temperatures can exceed 100 °C under sustained CPU/GPU load. The 150 °C limit directly informs thermal design margins when calculating allowable power dissipation using R_thJA = 45 °C/W.

Does SI8424CDB-T1-E1 require a gate resistor for stability in load-switch applications?

While SI8424CDB-T1-E1 can operate without an external gate resistor when driven by low-impedance GPIOs, a 1 Ω to 10 Ω series resistor is recommended to dampen potential gate oscillation caused by PCB trace inductance and device C_iss/C_rss interaction. The SI8424CDB-T1-E1 datasheet specifies switching times (e.g., t_d(on) = 13 ns) using R_g = 1 Ω, confirming this value as a proven design point for controlled edge rates.

Can SI8424CDB-T1-E1 be used in a high-side switch configuration?

No-SI8424CDB-T1-E1 is an N-channel MOSFET with source tied to the lowest potential node in its standard 4-bump layout. Implementing it as a high-side switch would require a gate drive voltage exceeding the source potential by ≥4.5 V, which is impractical without a dedicated charge pump. For high-side switching, a P-channel alternative or integrated high-side driver IC is required; the SI8424CDB-T1-E1 is optimized for low-side load switching only.

What is the body diode forward voltage of SI8424CDB-T1-E1 at 2 A?

The body diode forward voltage (V_SD) of SI8424CDB-T1-E1 is specified as 0.7 V typical and 1.2 V maximum at I_S = 2 A and V_GS = 0 V. This parameter is critical for applications involving reverse current conduction, such as inductive load freewheeling or reverse-polarity protection, where low V_SD minimizes conduction loss and self-heating during diode conduction phases.

Is SI8424CDB-T1-E1 compatible with standard SMT reflow profiles?

Yes-SI8424CDB-T1-E1 is qualified for lead-free reflow per IPC/JEDEC J-STD-020, with peak temperature up to 260 °C (IR/convection). Its MICRO FOOT® construction withstands standard reflow without underfill, provided the PCB land pattern follows Vishay's NSMD pad recommendations (0.30 mm circular copper pad, 0.41 mm solder mask opening) and stencil aperture is 0.33 mm.

SI8424CDB-T1-E1 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 4-UFBGA, WLCSP

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 8 V

Current - Continuous Drain (Id) @ 25°C:: 6.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.2V, 4.5V

Rds On (Max) @ Id, Vgs:: 20mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id:: 800mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 4.5 V

Vgs (Max):: ±5V

Input Capacitance (Ciss) (Max) @ Vds:: 2340 pF @ 4 V

FET Feature:: -

Power Dissipation (Max):: 1.1W (Ta), 2.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 4-Microfoot

SI8424CDB-T1-E1 FAQ

1.How can I place an order for SI8424CDB-T1-E1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI8424CDB-T1-E1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI8424CDB-T1-E1 reliable?

The price and inventory of SI8424CDB-T1-E1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8424CDB-T1-E1 is usually 5 days.

3.What payment methods are accepted for SI8424CDB-T1-E1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8424CDB-T1-E1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI8424CDB-T1-E1?

SI8424CDB-T1-E1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI8424CDB-T1-E1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI8424CDB-T1-E1?

For technical support, including SI8424CDB-T1-E1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8424CDB-T1-E1 requirements.

6.How does Aetrix verify that SI8424CDB-T1-E1 is sourced from the original manufacturer or authorized distributors?

All SI8424CDB-T1-E1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8424CDB-T1-E1 meets industry standards.

7.What is the process for return or replacement of SI8424CDB-T1-E1?

All SI8424CDB-T1-E1 units undergo pre-shipment inspection (PSI). If there is an issue with SI8424CDB-T1-E1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI8424CDB-T1-E1 part is unused and in its original packaging.

Return procedure for SI8424CDB-T1-E1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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