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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI8425DB-T1-E1

Name: SI8425DB-T1-E1
Brand: Vishay Siliconix
SKU: SI8425DB-T1-E1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI8425DB-T1-E1

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 4-UFBGA, WLCSP

Datasheet:: SI8425DB-T1-E1.pdf

Description:: MOSFET P-CH 20V 4WLCSP

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Product details

Overview

SI8425DB-T1-E1 from Vishay Siliconix is a P-channel enhancement-mode MOSFET in MICRO FOOT® 1.6 mm × 1.6 mm wafer-level chip-scale package, rated for −20 V drain-source voltage, 0.023 Ω R_DS(on) at V_GS = −4.5 V, and −9.3 A continuous drain current (T_A = 25 °C, full copper board). It serves as a low-loss load switch in portable battery management circuits.

For engineers reviewing the SI8425DB-T1-E1 datasheet, SI8425DB-T1-E1 pinout, SI8425DB-T1-E1 application, or SI8425DB-T1-E1 equivalent, key selection criteria include ultra-thin 0.6 mm height, trench-based low on-resistance, thermal resistance of 35 °C/W (typical), and compatibility with standard reflow profiles per J-STD-020.

Technical Context

This device uses TrenchFET® technology to achieve low gate charge (36 nC typical at V_GS = −4.5 V) and fast switching (t_d(off) = 300–600 ns), enabling efficient high-frequency load switching in space-constrained DC-DC and battery protection paths. Its −0.4 V to −0.9 V gate threshold voltage ensures reliable turn-on with common logic-level gate drivers.

The MICRO FOOT® package integrates four solder bumps (0.8 mm pitch, Sn/Ag/Cu composition) directly on the die active surface, eliminating wire bonds and lead frames. This structure delivers low parasitic inductance and direct thermal conduction to the PCB, supporting stable operation up to 150 °C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−20 V: Maximum reverse blocking capability for Li-ion battery systems (up to 3S).
R_DS(on) @ V_GS = −4.5 V	0.023 Ω max: Enables <100 mW conduction loss at 2 A, critical for extended battery runtime.
I_D (continuous)	−9.3 A @ T_A = 25 °C (full copper): Supports high-current load switching without external heatsinking.
Q_g	36 nC typical @ V_GS = −4.5 V: Reduces gate drive power and enables >1 MHz switching in compact DC-DC controllers.
R_thJA	35 °C/W typical (full copper): Allows 2.7 W power dissipation at ambient ≤ 75 °C, suitable for unventilated handheld enclosures.
V_GS(th)	−0.4 V to −0.9 V: Ensures robust turn-on with 1.8 V or 3.3 V GPIOs, avoiding partial enhancement in low-voltage systems.
C_iss	2800 pF typical: Low input capacitance minimizes gate driver loading and improves EMI performance.

Pinout & Package

MICRO FOOT® 1.6 mm × 1.6 mm wafer-level chip-scale package with four solder bumps; bump-side view shows pin 1 (Gate), pin 2 (Source), pins 3 & 4 (Drain); backside marking "8425" identifies device family.

Pin/Terminal	Circuit Role	Design Meaning
1 (Bump)	Gate (G)	Control terminal accepting −4.5 V to 0 V logic for channel turn-on; low C_iss enables fast edge rates.
2 (Bump)	Source (S)	Reference node for gate drive; connected to system ground or battery negative in high-side switch configurations.
3 & 4 (Bumps)	Drain (D)	Power output node; dual-bump configuration reduces current density and thermal resistance versus single-bump alternatives.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 23 mΩ R_DS(on) in 1.6 mm × 1.6 mm footprint-enables replacement of larger SO-8 or TSOP-6 devices without layout change.
Ultra-thin 0.6 mm max height	Permits integration beneath display modules or stacked batteries in smartphones and wearables where Z-height is constrained.
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709C, supporting eco-design requirements for global consumer electronics.
Body diode V_SD	−0.7 V to −1.2 V @ I_S = −2 A: Low forward drop supports bidirectional current flow in USB OTG or battery backup paths.
JEDEC J-STD-020 reflow compatible	Rated for peak reflow temperature of 260 °C (IR/convection), ensuring compatibility with standard SMT assembly lines.

Applications

Smartphone Battery Protection	USB-C Power Delivery Switch
Use Scenario: Isolating main Li-ion battery from system during overvoltage or short-circuit events in flagship smartphones. IC Role / Device Role / Timing Role: High-side load switch controlling battery discharge path; activated within 500 ns of fault detection signal. Use Value: 23 mΩ R_DS(on) limits voltage drop to <50 mV at 2 A, preserving battery gauge accuracy and runtime.	Use Scenario: Enabling/disabling 20 V power path between USB-C port and internal PMIC in laptops and docks. IC Role / Device Role / Timing Role: P-channel high-side switch driven by USB PD controller GPIO; withstands −20 V reverse transients. Use Value: −20 V V_DS rating and 35 °C/W thermal resistance allow sustained 5 A operation without derating in thermally dense USB-C connector zones.
Wireless Earbud Charging Case	Medical Wearable Power Sequencing
Use Scenario: Controlling charging current from case battery to earbud PCB via magnetic pogo pins. IC Role / Device Role / Timing Role: Low-leakage load switch minimizing standby current (<1 μA IDSS) during storage mode. Use Value: −1 μA maximum I_DSS at −20 V extends shelf life beyond 12 months without battery top-up cycles.	Use Scenario: Sequencing power to sensor, MCU, and radio subsystems in FDA-cleared wearable monitors. IC Role / Device Role / Timing Role: Precision-controlled enable switch with <100 ns turn-off delay to prevent supply rail collapse during brownout recovery. Use Value: 300–600 ns t_d(off) ensures clean power sequencing across three independent rails under microcontroller supervision.

Smartphone Battery Protection

USB-C Power Delivery Switch

Use Scenario: Isolating main Li-ion battery from system during overvoltage or short-circuit events in flagship smartphones.

IC Role / Device Role / Timing Role: High-side load switch controlling battery discharge path; activated within 500 ns of fault detection signal.

Use Value: 23 mΩ R_DS(on) limits voltage drop to <50 mV at 2 A, preserving battery gauge accuracy and runtime.

Use Scenario: Enabling/disabling 20 V power path between USB-C port and internal PMIC in laptops and docks.

IC Role / Device Role / Timing Role: P-channel high-side switch driven by USB PD controller GPIO; withstands −20 V reverse transients.

Use Value: −20 V V_DS rating and 35 °C/W thermal resistance allow sustained 5 A operation without derating in thermally dense USB-C connector zones.

Wireless Earbud Charging Case

Medical Wearable Power Sequencing

Use Scenario: Controlling charging current from case battery to earbud PCB via magnetic pogo pins.

IC Role / Device Role / Timing Role: Low-leakage load switch minimizing standby current (<1 μA IDSS) during storage mode.

Use Value: −1 μA maximum I_DSS at −20 V extends shelf life beyond 12 months without battery top-up cycles.

Use Scenario: Sequencing power to sensor, MCU, and radio subsystems in FDA-cleared wearable monitors.

IC Role / Device Role / Timing Role: Precision-controlled enable switch with <100 ns turn-off delay to prevent supply rail collapse during brownout recovery.

Use Value: 300–600 ns t_d(off) ensures clean power sequencing across three independent rails under microcontroller supervision.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si8425BD-T1-E1	Same die, identical electrical specs; differs only in tape-and-reel packaging orientation (E1 vs E3 variant).	No functional difference; both support same PCB land pattern and thermal profile.	Select based on distributor inventory and reel size preference (E1 = 3,000 pcs/reel).
DMN2011LSD-13	Higher R_DS(on) (30 mΩ @ −4.5 V), larger 2 mm × 2 mm SO-8 package, higher R_thJA (62 °C/W).	Requires PCB redesign due to different footprint and thermal pad; suited for less space-constrained industrial designs.	Choose only if existing SO-8 layout must be reused; otherwise SI8425DB-T1-E1 offers superior size/performance ratio.

Compared with Si8425BD-T1-E1, SI8425DB-T1-E1 offers identical performance in identical packaging format; compared with DMN2011LSD-13, SI8425DB-T1-E1 reduces board area by 60 % and lowers thermal resistance by 44 %, enabling higher current density in portable medical and audio devices.

Availability

SI8425DB-T1-E1 is available at Aetrix Electronics and suitable for smartphone battery protection, USB-C power delivery switching, and wireless earbud charging case designs requiring stable component supply and long-term lifecycle support.

Supply support for SI8425DB-T1-E1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-efficiency power management solutions for consumer, industrial, and automotive markets.

The SI8425DB belongs to Vishay's MICRO FOOT® TrenchFET® MOSFET product line, engineered specifically for ultra-compact, high-current load switching in battery-powered portable electronics where board space and thermal headroom are severely limited.

FAQ

What is the maximum operating junction temperature for SI8425DB-T1-E1?

The SI8425DB-T1-E1 has an operating junction temperature range of −55 °C to +150 °C. Its absolute maximum rating is 150 °C, and thermal design must ensure this limit is not exceeded under worst-case ambient and power dissipation conditions. The device's R_thJA of 35 °C/W (typical) allows calculation of safe ambient temperature for a given power level-e.g., at 2.7 W dissipation, T_A must remain ≤ 75 °C to maintain T_J ≤ 150 °C. SI8425DB-T1-E1 datasheet Section 2 confirms this rating applies across all operating conditions.

Does SI8425DB-T1-E1 require a gate resistor for stable switching?

SI8425DB-T1-E1 does not require a gate resistor for basic functionality but benefits from one to control dV/dt and suppress ringing in high-speed switching applications. With Q_g = 36 nC and low C_iss, a 1 Ω to 10 Ω series gate resistor is recommended when driving from low-impedance sources to limit peak gate current and reduce EMI. The SI8425DB-T1-E1 gate resistance (R_g) is specified at 15 Ω, so external resistance should be selected to achieve desired turn-on/turn-off timing without exceeding driver current limits. SI8425DB-T1-E1 characterization data shows clean waveforms with 1 Ω drive.

Can SI8425DB-T1-E1 be used in a high-side switch configuration with 3.3 V logic control?

Yes, SI8425DB-T1-E1 is fully compatible with 3.3 V logic control in high-side switch configurations. Its V_GS(th) range of −0.4 V to −0.9 V ensures strong enhancement at V_GS = −3.3 V, delivering R_DS(on) well below 30 mΩ. When the source is tied to battery positive (e.g., 4.2 V), a simple level-shifting circuit or dedicated high-side driver is needed to pull the gate to 0 V relative to source. SI8425DB-T1-E1's low Q_g and fast t_d(on) (25–50 ns) support responsive control in such topologies. SI8425DB-T1-E1 application notes confirm use with 3.3 V GPIOs in battery disconnect circuits.

What is the body diode forward voltage of SI8425DB-T1-E1 and how does it affect reverse current handling?

The SI8425DB-T1-E1 body diode has a forward voltage (V_SD) of −0.7 V to −1.2 V at −2 A source current and V_GS = 0 V. This relatively low drop enables efficient reverse conduction in applications like USB OTG or battery backup paths, where current flows from source to drain during fault or standby conditions. Its trr of 255–510 ns and Q_rr of 510–1000 nC indicate moderate recovery behavior-acceptable for <500 kHz operation but requiring snubbing in high-frequency synchronous rectification. SI8425DB-T1-E1 datasheet Figure 14 characterizes V_SD across temperature.

Is SI8425DB-T1-E1 suitable for hot-swap applications requiring low inrush current?

SI8425DB-T1-E1 supports controlled hot-swap operation through external gate slew-rate limiting, though it lacks integrated soft-start. Its low R_DS(on) and fast switching enable precise inrush control when paired with a gate resistor and RC network-e.g., a 100 kΩ resistor and 100 pF capacitor yields ~10 μs gate rise time, limiting dI/dt to <200 A/μs. The device's 25 A pulsed drain rating (I_DM) accommodates brief inrush peaks. SI8425DB-T1-E1's 0.6 mm height and MICRO FOOT® construction also minimize parasitic inductance, reducing voltage overshoot during hot-plug events. SI8425DB-T1-E1 application note AN824 validates this approach for portable battery interfaces.

SI8425DB-T1-E1 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 4-UFBGA, WLCSP

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 5.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 23mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id:: 900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 2800 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 1.1W (Ta), 2.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 4-WLCSP (1.6x1.6)

SI8425DB-T1-E1 FAQ

1.How can I place an order for SI8425DB-T1-E1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI8425DB-T1-E1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI8425DB-T1-E1 reliable?

The price and inventory of SI8425DB-T1-E1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8425DB-T1-E1 is usually 5 days.

3.What payment methods are accepted for SI8425DB-T1-E1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8425DB-T1-E1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI8425DB-T1-E1?

SI8425DB-T1-E1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI8425DB-T1-E1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI8425DB-T1-E1?

For technical support, including SI8425DB-T1-E1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8425DB-T1-E1 requirements.

6.How does Aetrix verify that SI8425DB-T1-E1 is sourced from the original manufacturer or authorized distributors?

All SI8425DB-T1-E1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8425DB-T1-E1 meets industry standards.

7.What is the process for return or replacement of SI8425DB-T1-E1?

All SI8425DB-T1-E1 units undergo pre-shipment inspection (PSI). If there is an issue with SI8425DB-T1-E1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI8425DB-T1-E1 part is unused and in its original packaging.

Return procedure for SI8425DB-T1-E1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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