My Inquiry
My Account
Vishay Siliconix SI8445DB-T2-E1
- Part No.:
- SI8445DB-T2-E1
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 4-XFBGA, CSPBGA
- Datasheet:
-
SI8445DB-T2-E1.pdf
- Description:
- MOSFET P-CH 20V 9.8A 4MICROFOOT
- Quantity:
- Payment:
- Shipping:
Inventory:5,227
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SI8445DB-T2-E1 from Vishay Siliconix is a P-channel TrenchFET® MOSFET optimized for low-voltage load switching in space-constrained portable electronics, featuring -20 V VDS, 0.084 Ω RDS(on) at VGS = -4.5 V, -9.8 A continuous drain current (TC = 25 °C), and ultra-thin 0.59 mm height in MICRO FOOT 2×2 bump package.
For engineers reviewing the SI8445DB-T2-E1 datasheet, SI8445DB-T2-E1 pinout, SI8445DB-T2-E1 application, or SI8445DB-T2-E1 equivalent, key selection criteria include gate threshold voltage (-0.35 to -0.85 V), body diode forward voltage (-0.7 to -1.2 V at -1 A), thermal resistance (RthJA = 55–70 °C/W), and lead-free reflow compatibility per J-STD-020C.
Technical Context
This P-channel MOSFET employs trench-gate silicon technology to achieve low on-resistance with minimal gate charge (Qg = 9.5 nC at VGS = -4.5 V), enabling fast switching in battery protection and load switch circuits. Its ultra-small 1.2 mm × 1.0 mm footprint and 0.59 mm profile support high-density PCB layouts in handheld devices.
The device integrates a robust intrinsic body diode (VSD = -0.7 to -1.2 V, trr = 25–50 ns) and operates across -55 to +150 °C junction temperature range. Absolute maximum ratings include ±5 V VGS, -20 V VDS, and 11.4 W power dissipation at TC = 25 °C - all validated under JEDEC-compliant reflow conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum drain-source blocking voltage for battery-side high-side switching in 3.3 V/5 V systems. |
| RDS(on) | 0.084 Ω at VGS = -4.5 V - Enables <100 mW conduction loss at 9.8 A, critical for thermal management in sealed enclosures. |
| ID (continuous) | -9.8 A at TC = 25 °C - Supports high-current load switching without external heatsinking in compact battery packs. |
| VGS(th) | -0.35 to -0.85 V - Ensures reliable turn-on with low-voltage logic (e.g., 1.8 V GPIO), reducing need for level-shifting circuitry. |
| Qg | 9.5 nC at VGS = -4.5 V - Minimizes gate drive power and switching transition time in high-frequency PWM control. |
| RthJA | 55–70 °C/W - Defines thermal derating slope; requires ≥1.8 W ambient-rated layout for full current at 70 °C ambient. |
| trr | 25–50 ns - Limits reverse recovery losses during synchronous rectification or bidirectional current flow. |
Pinout & Package
MICRO FOOT 2×2 bump package (1.2 mm × 1.0 mm × 0.59 mm), Pb-free 95.5Sn/3.8Ag/0.7Cu solder bumps on 0.5 mm pitch; backside marked "8445" and date/lot code; non-solder-mask-defined copper pads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Top-left) | Source (S) | Primary current return path; electrically tied to package backside metal for thermal conduction and low-inductance grounding. |
| 2 (Top-right) | Source (S) | Dual-source configuration reduces RDS(on) and improves current sharing; must be connected to common source node. |
| 3 (Bottom-left) | Drain (D) | Main power output terminal; connects to load or battery cathode; thermally coupled to die via bump array. |
| 4 (Bottom-right) | Gate (G) | Control input requiring <±100 nA leakage; sensitive to ESD; must be driven with low-impedance source to minimize switching delay. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers 0.084 Ω RDS(on) at -4.5 V in sub-1 mm² footprint - enables higher efficiency than planar MOSFETs of comparable size. |
| Ultra-thin 0.59 mm profile | Permits integration into <1.0 mm Z-height assemblies (e.g., slim smartphones, wearables) without mechanical interference. |
| Low VGS(th) (-0.35 to -0.85 V) | Ensures full enhancement with 1.2–1.8 V control signals - eliminates need for gate boosters in single-supply battery systems. |
| Body diode trr = 25–50 ns | Reduces switching losses during freewheeling in load-switch and battery-protection configurations with rapid polarity reversal. |
| J-STD-020C reflow compliant | Supports standard 260 °C peak reflow without degradation - ensures manufacturability in high-volume SMT lines without special process tuning. |
Applications
| Battery Protection Circuit | Low-Voltage Load Switch |
|---|---|
|
Use Scenario: Reverse-current blocking and overcurrent cutoff in Li-ion battery packs for tablets and power banks. IC Role / Device Role / Timing Role: High-side P-channel switch controlling battery cathode connection; responds within microseconds to protection IC fault signals. Use Value: 0.084 Ω RDS(on) limits voltage drop to <830 mV at 9.8 A, preserving battery runtime and minimizing thermal rise in sealed modules. |
Use Scenario: Controlled power-up sequencing for RF modules and sensors in IoT edge nodes powered by coin cells or small LiPo batteries. IC Role / Device Role / Timing Role: Load switch isolating downstream circuitry until MCU GPIO asserts gate; enables zero-quiescent-current sleep states. Use Value: -0.35 V minimum VGS(th) guarantees turn-on with 1.2 V I/O, eliminating level shifters and reducing BOM count by one active component. |
| Portable Device Power Management | USB-C Port Power Path |
|
Use Scenario: Dual-battery arbitration and system power rail selection in ruggedized handheld scanners and medical monitors. IC Role / Device Role / Timing Role: Back-to-back P-MOSFET pair configured as ideal diode controller; handles bidirectional current up to 5 A. Use Value: 25 ns body diode reverse recovery time minimizes shoot-through risk during dynamic load transients, improving system reliability. |
Use Scenario: VBUS switching and fault isolation in USB-C receptacles supporting 3 A @ 5 V (15 W) power delivery. IC Role / Device Role / Timing Role: High-side switch placed between upstream power source and downstream port controller; rated for -20 V transient tolerance. Use Value: -20 V VDS rating exceeds USB-C ±20 V surge requirements (IEC 61000-4-5), providing margin against ESD and hot-plug transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8445BB-T2-E1 | Same die, but MICRO FOOT 1.6 mm × 1.6 mm package (larger footprint, same 0.59 mm height); RDS(on) identical at -4.5 V. | Requires larger PCB area; better thermal performance (RthJA ≈ 45 °C/W) but incompatible with 1.2 mm × 1.0 mm layout. | Select when board space allows and lower thermal resistance is prioritized over miniaturization. |
| DMN2011UFG-7 | Diodes Inc. P-channel, -20 V, 0.075 Ω @ -4.5 V, 1.0 mm × 1.0 mm × 0.55 mm; different pinout (S-G-S-D vs D-S-S-G). | Not pin-compatible; requires PCB redesign; slightly lower RDS(on) but higher Qg (12.5 nC) increases gate drive loss. | Consider only if layout revision is feasible and marginal RDS(on) improvement justifies redesign effort. |
Compared with SI8445DB-T2-E1, Si8445BB-T2-E1 offers superior thermal performance in exchange for larger footprint, while DMN2011UFG-7 delivers marginally lower on-resistance but demands layout changes and increases gate drive burden - making SI8445DB-T2-E1 optimal for strict size-constrained designs where thermal margin is managed via layout.
Availability
SI8445DB-T2-E1 is available at Aetrix Electronics and suitable for battery protection, portable device load switching, and USB-C power path applications requiring stable component supply, RoHS compliance, and J-STD-020C reflow capability.
Supply support for SI8445DB-T2-E1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on efficiency, miniaturization, and reliability.
The Si8445DB series belongs to Vishay's MICRO FOOT TrenchFET® portfolio, engineered specifically for ultra-compact, high-current load switching in battery-powered consumer and portable industrial electronics.
FAQ
What is the maximum continuous drain current for SI8445DB-T2-E1 at 70 °C case temperature?
The SI8445DB-T2-E1 supports -7.9 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the MICRO FOOT package; maintaining adequate copper pour and airflow is essential to sustain this current without exceeding 150 °C junction temperature.
Does SI8445DB-T2-E1 have a specified body diode reverse recovery charge (Qrr)?
Yes, the SI8445DB-T2-E1 has a body diode reverse recovery charge of 10–20 nC, measured at IF = -1 A, dI/dt = 100 A/µs, and TJ = 25 °C. This parameter directly impacts switching loss in bidirectional or freewheeling configurations and is critical for designing efficient battery protection circuits.
Can SI8445DB-T2-E1 be used with 1.8 V GPIO control without external level shifting?
Yes, SI8445DB-T2-E1 can be fully enhanced using 1.8 V GPIO control because its gate threshold voltage range is -0.35 to -0.85 V. At VGS = -1.8 V, RDS(on) is 0.120 Ω - sufficient for most load-switch applications up to ~5 A, eliminating the need for level-shifting circuitry.
What is the thermal resistance from junction to foot (RthJF) for SI8445DB-T2-E1?
The SI8445DB-T2-E1 has a typical junction-to-foot thermal resistance of 8.5 °C/W (maximum 11 °C/W), measured under steady-state conditions. This value enables direct thermal coupling to PCB ground planes or thermal vias, making it suitable for applications where heat must be extracted through the drain bump rather than the top surface.
Is SI8445DB-T2-E1 compatible with standard lead-free reflow profiles?
Yes, SI8445DB-T2-E1 is qualified for IR/convection reflow up to 260 °C peak temperature per IPC/JEDEC J-STD-020C. The MICRO FOOT package uses Pb-free 95.5Sn/3.8Ag/0.7Cu bumps and is rated for no manual or hand soldering - ensuring compatibility with automated SMT assembly lines.
SI8445DB-T2-E1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 4-XFBGA, CSPBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 9.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 84mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id:
- 850mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 16 nC @ 5 V
- Vgs (Max):
- ±5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 700 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta), 11.4W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 4-Microfoot
SI8445DB-T2-E1 FAQ
1.How can I place an order for SI8445DB-T2-E1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI8445DB-T2-E1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI8445DB-T2-E1 reliable?
The price and inventory of SI8445DB-T2-E1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8445DB-T2-E1 is usually 5 days.
3.What payment methods are accepted for SI8445DB-T2-E1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8445DB-T2-E1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI8445DB-T2-E1?
SI8445DB-T2-E1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI8445DB-T2-E1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI8445DB-T2-E1?
For technical support, including SI8445DB-T2-E1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8445DB-T2-E1 requirements.
6.How does Aetrix verify that SI8445DB-T2-E1 is sourced from the original manufacturer or authorized distributors?
All SI8445DB-T2-E1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8445DB-T2-E1 meets industry standards.
7.What is the process for return or replacement of SI8445DB-T2-E1?
All SI8445DB-T2-E1 units undergo pre-shipment inspection (PSI). If there is an issue with SI8445DB-T2-E1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI8445DB-T2-E1 part is unused and in its original packaging.
Return procedure for SI8445DB-T2-E1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SI8445DB-T2-E1 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
