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Vishay Siliconix SI8451DB-T2-E1
- Part No.:
- SI8451DB-T2-E1
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 6-UFBGA
- Datasheet:
-
SI8451DB-T2-E1.pdf
- Description:
- MOSFET P-CH 20V 10.8A 6MICROFOOT
- Quantity:
- Payment:
- Shipping:
Inventory:8,212
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Product details
Overview
SI8451DB-T2-E1 from Vishay Siliconix is a P-channel TrenchFET® MOSFET rated for -20 V drain-source voltage, 0.080 Ω RDS(on) at VGS = -4.5 V, and -10.8 A continuous drain current at TC = 25 °C, designed for low-threshold load switching in portable battery management systems.
For engineers reviewing the SI8451DB-T2-E1 datasheet, SI8451DB-T2-E1 pinout, SI8451DB-T2-E1 application, or SI8451DB-T2-E1 equivalent, key selection factors include its MICRO FOOT 2×3 bump package, -1.0 V gate threshold, body diode recovery time of 25–40 ns, and Pb-free RoHS-compliant construction per J-STD-020C reflow profile.
Technical Context
This P-channel MOSFET operates with a gate-source threshold voltage range of -0.4 V to -1.0 V and delivers 0.080 Ω on-resistance at -4.5 V gate drive, enabling efficient low-voltage load switching down to 1.5 V logic levels. Its 7.7 nC total gate charge supports fast turn-on/turn-off with minimal drive power.
The device integrates a source-drain body diode with -0.8 V to -1.2 V forward voltage at -1 A and 25–40 ns reverse recovery time, making it suitable for synchronous rectification and bidirectional current paths in compact battery protection circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum blocking voltage for battery-side high-side switch applications |
| RDS(on) | 0.080 Ω at VGS = -4.5 V - Enables <100 mW conduction loss at 1 A load current |
| ID (cont) | -10.8 A at TC = 25 °C - Supports high-current battery discharge paths without external heatsink |
| VGS(th) | -0.4 to -1.0 V - Ensures reliable turn-on with 1.5–1.8 V logic-level control signals |
| Qg | 10–15 nC at VGS = -4.5 V - Reduces gate driver power and enables >1 MHz switching in DC-DC controllers |
| trr | 25–40 ns - Limits switching losses and EMI during body diode commutation |
| RthJA | 37–45 °C/W - Defines thermal derating for PCB layout on 1" × 1" FR4 board |
Pinout & Package
MICRO FOOT 6-bump package (2 × 3 array, 0.5 mm pitch), Pb-free Sn/Ag/Cu bumps (Ø 0.30–0.32 mm), backside Ti/Ni/Ag metallization, non-solder-mask-defined landing pads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 5, 6 (S) | Source | Five parallel source terminals reduce resistance and improve thermal spreading to PCB copper |
| 4 (G) | Gate | Single gate bump enables compact routing and minimizes gate loop inductance |
| 1, 2, 4, 5 (D) | Drain | Four drain bumps provide low-inductance, high-current path to ground plane or heat sink |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers ultra-low RDS(on) at 1.5–2.5 V gate drive, critical for single-cell Li-ion systems |
| MICRO FOOT 1.0 × 1.5 mm footprint | Reduces board area by >50% vs. SO-8 while maintaining 13 W power dissipation capability |
| RoHS-compliant Pb-free bumps | Meets J-STD-020C reflow profile (260 °C peak) without manual soldering restrictions |
| Body diode with Qrr = 13–20 nC | Minimizes reverse recovery energy loss in bidirectional battery protection ICs |
| VGS(th) temperature coefficient | Negative drift ensures stable turn-on behavior across -55 to 150 °C operating range |
Applications
| Battery Protection Circuit | Low-Voltage Load Switch |
|---|---|
Use Scenario: Overcurrent and short-circuit protection in single-cell Li-ion battery packs using integrated protection ICs. IC Role / Device Role / Timing Role: High-side P-channel switch controlled by protection IC's output to disconnect cell during fault conditions. Use Value: -1.0 V VGS(th) ensures full enhancement with 1.8 V logic outputs; 0.080 Ω RDS(on) limits voltage drop to <80 mV at 1 A. |
Use Scenario: Power gating for USB peripherals or sensors in wearables powered by 1.5–3.3 V rails. IC Role / Device Role / Timing Role: Load switch enabling/disabling power to downstream circuitry under microcontroller GPIO control. Use Value: 7.7 nC Qg allows clean 100 ns turn-on with 10 kΩ pull-up; MICRO FOOT footprint saves space in 3 × 3 mm system-in-package designs. |
| Portable Device Power Management | Smart Battery Pack Monitoring |
Use Scenario: Dual-path power selection (battery vs. adapter) in Bluetooth headsets and medical patches. IC Role / Device Role / Timing Role: Back-to-back P-MOSFET pair configured as ideal diode controller for seamless source switchover. Use Value: Body diode VSD = -0.8 to -1.2 V reduces forward drop vs. Schottky; trr = 25–40 ns prevents shoot-through during transition. |
Use Scenario: Cell balancing and fuel gauge interface in multi-cell smart batteries with embedded SMBus communication. IC Role / Device Role / Timing Role: Isolation switch between battery pack and host system during firmware updates or deep sleep. Use Value: -20 V VDS rating accommodates up to 5-series Li-ion stacks; RthJF = 7–9.5 °C/W enables direct thermal coupling to battery thermistor pad. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8452DB-T2-E1 | Same die, identical RDS(on), VGS(th), and Qg; differs only in marking code and tape/reel packaging | No functional difference; used interchangeably in production where reel size or date-code traceability differs | Select Si8452DB-T2-E1 when requiring alternate reel configuration or specific lot traceability format |
| DMN2011LFG-7 | Higher RDS(on) (0.115 Ω @ -4.5 V), larger 1.6 × 1.6 mm package, 12.5 A ID, same -20 V rating | Less suitable for space-constrained 1.5 V logic interfaces due to higher VGS(th) (-1.2 V min) | Choose DMN2011LFG-7 only when higher current margin (>12 A) justifies 2.5× footprint increase and tighter gate drive requirements |
Compared with SI8451DB-T2-E1, Si8452DB-T2-E1 offers identical electrical performance with packaging variation, while DMN2011LFG-7 trades compactness and low-threshold operation for higher current rating and less optimized gate drive sensitivity.
Availability
SI8451DB-T2-E1 is available at Aetrix Electronics and suitable for portable devices, battery protection circuits, and low-voltage load switching applications requiring stable component supply and RoHS-compliant manufacturing.
Supply support for SI8451DB-T2-E1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The Si8451DB belongs to Vishay's MICRO FOOT TrenchFET® P-channel MOSFET product line, engineered for ultra-compact, low-voltage battery-powered systems demanding minimal gate drive and high thermal efficiency.
FAQ
What is the maximum continuous drain current for SI8451DB-T2-E1 at 70 °C case temperature?
The SI8451DB-T2-E1 supports -8.7 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the MICRO FOOT package without additional heatsinking, and must be verified against actual PCB copper area and ambient airflow in the final design.
Does SI8451DB-T2-E1 support 1.5 V logic-level gate drive?
Yes, the SI8451DB-T2-E1 has a gate-source threshold voltage range of -0.4 V to -1.0 V and delivers 0.138–0.200 Ω RDS(on) at VGS = -1.5 V, confirming reliable enhancement with 1.5 V logic signals. This makes SI8451DB-T2-E1 suitable for direct interfacing with low-voltage microcontrollers and battery fuel gauges.
What is the thermal resistance from junction to foot (RthJF) for SI8451DB-T2-E1?
The SI8451DB-T2-E1 has a typical junction-to-foot thermal resistance of 7 °C/W and a maximum of 9.5 °C/W, measured from the silicon die to the solder bumps. This parameter enables accurate thermal modeling when the device is mounted directly to a high-copper PCB layer acting as a thermal spreader or heatsink.
Is SI8451DB-T2-E1 compatible with lead-free reflow processes?
Yes, SI8451DB-T2-E1 uses Pb-free 95.5Sn/3.8Ag/0.7Cu solder bumps and is qualified for IR/convection reflow up to 260 °C per J-STD-020C. The package requires no manual soldering and is designed for automated assembly in high-reliability portable electronics manufacturing.
How does the body diode performance of SI8451DB-T2-E1 compare to discrete Schottky diodes in battery protection?
The SI8451DB-T2-E1 body diode exhibits VSD = -0.8 to -1.2 V at -1 A and trr = 25–40 ns, offering lower forward voltage than most 20 V Schottky diodes above 0.5 A while avoiding external component count. Unlike Schottkys, its Qrr = 13–20 nC is tightly controlled and thermally stable, reducing EMI in fast-switching protection ICs.
SI8451DB-T2-E1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 6-UFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 10.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 80mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 24 nC @ 8 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 750 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.77W (Ta), 13W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-Micro Foot™ (1.5x1)
SI8451DB-T2-E1 FAQ
1.How can I place an order for SI8451DB-T2-E1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI8451DB-T2-E1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI8451DB-T2-E1 reliable?
The price and inventory of SI8451DB-T2-E1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8451DB-T2-E1 is usually 5 days.
3.What payment methods are accepted for SI8451DB-T2-E1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8451DB-T2-E1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI8451DB-T2-E1?
SI8451DB-T2-E1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI8451DB-T2-E1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI8451DB-T2-E1?
For technical support, including SI8451DB-T2-E1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8451DB-T2-E1 requirements.
6.How does Aetrix verify that SI8451DB-T2-E1 is sourced from the original manufacturer or authorized distributors?
All SI8451DB-T2-E1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8451DB-T2-E1 meets industry standards.
7.What is the process for return or replacement of SI8451DB-T2-E1?
All SI8451DB-T2-E1 units undergo pre-shipment inspection (PSI). If there is an issue with SI8451DB-T2-E1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI8451DB-T2-E1 part is unused and in its original packaging.
Return procedure for SI8451DB-T2-E1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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