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Vishay Siliconix SI8461DB-T2-E1
- Part No.:
- SI8461DB-T2-E1
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 4-XFBGA, CSPBGA
- Datasheet:
-
SI8461DB-T2-E1.pdf
- Description:
- MOSFET P-CH 20V 4MICROFOOT
- Quantity:
- Payment:
- Shipping:
Inventory:2,722
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Product details
Overview
SI8461DB-T2-E1 from Vishay Siliconix is a P-channel -20 V (D-S) TrenchFET® power MOSFET in MICRO FOOT® 1 mm × 1 mm package, delivering RDS(on) = 0.100 Ω at VGS = -4.5 V and continuous drain current of -3.7 A at TA = 25 °C. It serves as a compact, low-profile load switch in space-constrained portable electronics.
For engineers reviewing the SI8461DB-T2-E1 datasheet, SI8461DB-T2-E1 pinout, SI8461DB-T2-E1 application, or SI8461DB-T2-E1 equivalent, key selection criteria include ultra-thin 0.548 mm height, thermal resistance RthJA = 55 °C/W (full copper), gate charge Qg = 9.5 nC at -4.5 V, and body diode recovery time trr = 15 ns - all critical for high-efficiency battery and charger switching.
Technical Context
This device uses trench-gate silicon technology to achieve low on-resistance with minimal gate drive voltage, enabling operation down to VGS = -1.5 V. Its MICRO FOOT® bump-based packaging eliminates wire bonds and solder joints, reducing parasitic inductance and improving thermal path from die to PCB.
The Si8461DB-T2-E1 features a negative threshold voltage range of -0.4 V to -1.0 V, supports pulsed drain currents up to -20 A, and integrates a source-drain diode with VSD = -0.8 V at -1 A and Qrr = 10 nC - optimized for synchronous rectification and reverse polarity protection circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - maximum blocking voltage for battery-side switching in 3.3 V–12 V systems |
| RDS(on) | 0.100 Ω at VGS = -4.5 V - enables <100 mW conduction loss at 3.7 A load current |
| ID (continuous) | -3.7 A at TA = 25 °C - supports USB-C PD and multi-cell Li-ion battery switches |
| Qg | 9.5 nC at VGS = -4.5 V - allows fast turn-on with low gate driver power demand |
| trr | 15 ns - minimizes switching losses during body diode commutation in buck or OR-ing configurations |
| RthJA | 55 °C/W (full copper) - enables 1.8 W dissipation without heatsink on standard FR4 |
| Package | MICRO FOOT® 1 mm × 1 mm, 0.5 mm pitch, 4-bump - 70% smaller footprint than SOT-23 |
Pinout & Package
MICRO FOOT® 1 mm × 1 mm package with 4 solder bumps: Pin 1 = Source, Pin 2 = Source, Pin 3 = Drain, Pin 4 = Gate. Bump-side mounting places active die face down for optimal thermal transfer to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S) | Source terminal (bump) | Primary return path; dual-source bumps reduce current density and improve thermal spreading |
| 2 (S) | Source terminal (bump) | Redundant source connection lowers effective RDS(on) and improves current sharing |
| 3 (D) | Drain terminal (bump) | Main power input node; connects directly to battery or supply rail |
| 4 (G) | Gate terminal (bump) | Control input requiring <10 nC charge for full enhancement; compatible with 1.8 V–4.5 V logic |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® silicon process | Enables sub-0.1 Ω RDS(on) at -4.5 V gate drive while maintaining -20 V breakdown rating |
| Ultra-thin 0.548 mm profile | Permits integration beneath connectors or in stacked PCB assemblies where Z-height is constrained |
| Lead (Pb)-free and halogen-free | Complies with RoHS 2011/65/EU and JEDEC JS709B, suitable for consumer and medical end equipment |
| Low Qgd/Qgs ratio | 2.6 nC / 0.9 nC = 2.89 - improves hard-switching EMI behavior and reduces Miller-induced shoot-through risk |
| Body diode ta + tb = 15 ns | Enables efficient freewheeling in DC-DC converters without external Schottky clamp |
Applications
| Battery Protection Circuit | USB-C Power Delivery Switch |
|---|---|
Use Scenario: Reverse polarity and overcurrent protection in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: High-side P-channel MOSFET used as back-to-back switch to block reverse current and enable safe hot-plug insertion. Use Value: RDS(on) = 0.100 Ω limits voltage drop to <370 mV at 3.7 A, preserving battery runtime and thermal margin. | Use Scenario: VBUS path control in USB-C receptacles supporting 3 A / 20 V PD profiles. IC Role / Device Role / Timing Role: Load switch isolating downstream port circuitry during cable insertion/removal or fault conditions. Use Value: 9.5 nC Qg allows clean, bounce-free switching within USB-C specification timing windows (tON < 100 μs). |
| Smartphone Charger Switch | Wearable Device Power Management |
Use Scenario: Dual-input charging (USB + wireless) with automatic source selection and isolation. IC Role / Device Role / Timing Role: Low-RDS(on) P-channel switch routing power from either source to battery charging IC. Use Value: 0.548 mm height fits under thin bezels; trr = 15 ns prevents cross-conduction during source handover. | Use Scenario: Always-on power gating for BLE radio, sensors, and display in hearables and smart bands. IC Role / Device Role / Timing Role: Ultra-compact load switch enabling rapid power cycling (<10 μs) to meet strict sleep-mode current targets. Use Value: MICRO FOOT® 1 mm × 1 mm footprint saves >60% board area vs. SOT-23, critical for sub-100 mm² PCBs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8461BB-T1-E3 | Same die, 3000-piece tape-and-reel (T1) vs. 10000-piece (T2); identical electrical specs and package | No functional difference; differs only in packaging format and reel size | Select T1 for prototyping or low-volume production; T2 for high-volume automated assembly |
| DMN2011LFG-7 | 0.095 Ω RDS(on) at -4.5 V but larger 1.6 mm × 1.6 mm package and 0.65 mm height | Higher thermal resistance (RthJA = 85 °C/W) limits power handling in dense layouts | Choose when slightly lower RDS(on) outweighs footprint and height constraints |
Compared with SI8461DB-T2-E1, Si8461BB-T1-E3 offers identical performance in smaller reels, while DMN2011LFG-7 trades 5% lower on-resistance for 156% larger footprint and 19% greater height - making SI8461DB-T2-E1 optimal for ultra-thin, area-sensitive designs.
Availability
SI8461DB-T2-E1 is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, and wearable device power management requiring stable component supply and long-term lifecycle support.
Supply support for SI8461DB-T2-E1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high reliability and power efficiency.
The Si8461DB product line delivers ultra-compact P-channel TrenchFET® MOSFETs for space- and thermally constrained portable power management, targeting smartphone, wearables, and USB-C ecosystem applications.
FAQ
What is the maximum continuous drain current for SI8461DB-T2-E1 at 70 °C ambient temperature?
The SI8461DB-T2-E1 supports -3.0 A continuous drain current at TA = 70 °C with full copper PCB layout. This derating reflects thermal limits imposed by its RthJA = 55 °C/W and TJ(max) = 150 °C. At minimum copper, the rating drops to -1.9 A under the same condition - always verify layout-dependent thermal performance using the normalized transient impedance curves in the datasheet.
Does SI8461DB-T2-E1 require a gate resistor for reliable switching in a 3.3 V microcontroller-driven load switch?
No external gate resistor is required for basic on/off control of SI8461DB-T2-E1 with a 3.3 V GPIO, as its VGS(th) (-0.4 V to -1.0 V) ensures full enhancement. However, a 10 Ω series resistor is recommended to dampen ringing caused by PCB trace inductance and gate capacitance (Ciss = 610 pF), especially when driving at >100 kHz or in noise-sensitive environments.
Can SI8461DB-T2-E1 be used in place of an N-channel MOSFET in a high-side switch configuration?
Yes - SI8461DB-T2-E1 is specifically designed as a P-channel MOSFET for high-side switching, eliminating the need for a gate-boost circuit required by N-channel devices. Its -20 V VDS rating and -4.5 V optimized RDS(on) make it ideal for 3.3 V–12 V rail switching where simplicity and board area are prioritized over absolute lowest on-resistance.
What is the body diode forward voltage of SI8461DB-T2-E1 at -1 A, and how does it affect reverse-current protection?
The body diode forward voltage of SI8461DB-T2-E1 is -0.8 V (typical) at -1 A and 25 °C. This relatively low VSD enables effective reverse-current blocking in back-to-back configurations, but for stringent leakage requirements (<1 μA), a dedicated ideal diode controller or external Schottky may be needed - the SI8461DB-T2-E1 alone provides robust but not ultra-low-leakage protection.
Is SI8461DB-T2-E1 compatible with lead-free reflow profiles per IPC/JEDEC J-STD-020?
Yes - SI8461DB-T2-E1 is qualified for lead-free reflow with peak temperature up to 260 °C (IR/convection), meeting IPC/JEDEC J-STD-020 moisture sensitivity level 1. The device must be stored per MSL-1 guidelines and processed without manual or hand soldering. Its MICRO FOOT® bump structure is designed for reliable solder joint formation under standard Pb-free thermal profiles.
SI8461DB-T2-E1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 4-XFBGA, CSPBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 24 nC @ 8 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 610 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 780mW (Ta), 1.8W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 4-Microfoot
SI8461DB-T2-E1 FAQ
1.How can I place an order for SI8461DB-T2-E1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI8461DB-T2-E1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI8461DB-T2-E1 reliable?
The price and inventory of SI8461DB-T2-E1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8461DB-T2-E1 is usually 5 days.
3.What payment methods are accepted for SI8461DB-T2-E1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8461DB-T2-E1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI8461DB-T2-E1?
SI8461DB-T2-E1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI8461DB-T2-E1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI8461DB-T2-E1?
For technical support, including SI8461DB-T2-E1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8461DB-T2-E1 requirements.
6.How does Aetrix verify that SI8461DB-T2-E1 is sourced from the original manufacturer or authorized distributors?
All SI8461DB-T2-E1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8461DB-T2-E1 meets industry standards.
7.What is the process for return or replacement of SI8461DB-T2-E1?
All SI8461DB-T2-E1 units undergo pre-shipment inspection (PSI). If there is an issue with SI8461DB-T2-E1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI8461DB-T2-E1 part is unused and in its original packaging.
Return procedure for SI8461DB-T2-E1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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