Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI8469DB-T2-E1

Name: SI8469DB-T2-E1
Brand: Vishay Siliconix
SKU: SI8469DB-T2-E1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SI8469DB-T2-E1

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 4-UFBGA

Datasheet:: SI8469DB-T2-E1.pdf

Description:: MOSFET P-CH 8V 4.6A 4MICROFOOT

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,082

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SI8469DB-T2-E1 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET optimized for low-voltage load switching in space-constrained portable electronics. It features -8 V V_DS, 0.052 Ω R_DS(on) at V_GS = -4.5 V, -4.6 A continuous drain current, ultra-small MICRO FOOT® 1 mm × 1 mm package, and 0.548 mm max height - enabling use as a battery or charger switch in 1.2 V power rails.

For engineers reviewing the SI8469DB-T2-E1 datasheet, SI8469DB-T2-E1 pinout, SI8469DB-T2-E1 application, or SI8469DB-T2-E1 equivalent, key selection criteria include its low gate threshold (-0.35 to -0.8 V), fast switching (15 ns turn-on delay), body diode performance (V_SD = -0.9 to -1.3 V), thermal resistance (70 °C/W max junction-to-ambient), and Pb-free/halogen-free compliance per ordering code.

Technical Context

This device operates as a single P-channel MOSFET with source-connected substrate and bump-based MICRO FOOT® packaging. Its gate drive requires negative V_GS relative to source, supporting logic-level control down to -1.2 V, and exhibits strong transconductance (12 S typical) and low input capacitance (900 pF C_iss) for efficient high-frequency switching.

The Si8469DB-T2-E1 integrates a monolithic silicon die with Ti/Ni/Ag backside metallization and Sn/Ag/Cu solder bumps. Thermal performance is characterized on FR4 boards with full or minimum copper, yielding R_thJA of 70 °C/W (full copper) or 160 °C/W (minimum copper), and it supports reflow per IPC/JEDEC J-STD-020 at 260 °C peak.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-8 V - Maximum reverse drain-source voltage before breakdown; defines safe operating range in battery-switch configurations.
R_DS(on)	0.052 Ω @ V_GS = -4.5 V - Low conduction loss enables <100 mW dissipation at 4.6 A, critical for thermally limited portable PCBs.
I_D (cont)	-4.6 A @ T_A = 25 °C - Continuous current rating under full-copper board conditions; derates to -2.8 A at 70 °C ambient.
Q_g	11 nC typical - Total gate charge determines driver strength requirement; enables fast switching with low gate-drive power.
V_GS(th)	-0.35 to -0.8 V - Gate threshold range ensures reliable turn-on with 1.2–1.8 V logic controllers without level-shifting.
T_J Range	-55 to +150 °C - Extended junction temperature range supports operation in sealed or high-power-density handheld enclosures.
C_iss	900 pF - Input capacitance impacts gate drive loop stability and EMI in high-speed load-switching applications.

Pinout & Package

MICRO FOOT® 1 mm × 1 mm, 4-bump package with 0.5 mm pitch and 0.286 mm bump height. Bumps are Sn/Ag/Cu; backside coated with Ti/Ni/Ag. Pin 1 identified by laser mark on die backside.

Pin/Terminal	Circuit Role	Design Meaning
1 (S)	Source	Common return path for load current; tied to system ground or battery negative in high-side switch configuration.
2 (S)	Source	Second source terminal - paralleled internally or externally to reduce resistance and improve thermal spreading.
3 (D)	Drain	High-current output node connected to load; exposed die backside serves as thermal path in mounted state.
4 (G)	Gate	Control input requiring negative voltage relative to source; low 6 Ω gate resistance minimizes ringing.

Key Features

Feature	Design Value
TrenchFET® architecture	Enables ultra-low R_DS(on) in sub-1 mm² footprint, reducing board area and thermal resistance vs. planar MOSFETs.
MICRO FOOT® 1 × 1 mm package	Reduces PCB real estate by >70% vs. standard SO-8 or TSOP-6, enabling direct integration into compact battery management modules.
Ultra-thin 0.548 mm profile	Permits placement under thin-film shields or beneath stacked components in slim mobile devices.
Low V_GS(th) and high g_fs	Supports direct drive from 1.2–1.8 V microcontrollers without external level shifters or gate drivers.
Body diode with 25 ns t_rr	Minimizes reverse-recovery losses during synchronous or bidirectional switching in USB-C PD or battery protection circuits.

Applications

Battery Protection Switch	USB-C Power Delivery Load Switch
Use Scenario: Isolating Li-ion battery cells during overvoltage, overtemperature, or short-circuit events in smart battery packs. IC Role / Device Role / Timing Role: High-side P-channel switch controlling battery discharge path; activated/deactivated by fuel gauge or protection IC. Use Value: 0.052 Ω R_DS(on) limits voltage drop to <240 mV at 4.6 A, preserving battery runtime and minimizing heat generation in sealed enclosures.	Use Scenario: Enabling/disabling VBUS power delivery in USB-C receptacles based on CC logic negotiation. IC Role / Device Role / Timing Role: Load switch placed between power source and VBUS line; controlled by USB PD controller GPIO. Use Value: Fast 15 ns turn-on delay and low Q_g support rapid power sequencing (<100 μs response), meeting USB-C specification timing requirements.
1.2 V Core Rail Switch	Wireless Earbud Charging Case Switch
Use Scenario: Power gating a 1.2 V processor core rail during deep-sleep modes to eliminate leakage current. IC Role / Device Role / Timing Role: Low-voltage P-channel switch placed between PMIC LDO output and SoC VDD_IO rail. Use Value: Guaranteed turn-on at V_GS = -1.2 V enables direct control from 1.2 V logic outputs, eliminating level-shifter components and BOM cost.	Use Scenario: Managing charging current flow from case battery to earbud battery via magnetic pogo pins. IC Role / Device Role / Timing Role: Bidirectional load switch handling both charging (case → earbud) and reverse current blocking (earbud → case). Use Value: Integrated body diode with 1.3 V max V_SD and 25 ns t_rr ensures minimal forward drop and fast recovery during dynamic insertion/removal events.

Battery Protection Switch

USB-C Power Delivery Load Switch

Use Scenario: Isolating Li-ion battery cells during overvoltage, overtemperature, or short-circuit events in smart battery packs.

IC Role / Device Role / Timing Role: High-side P-channel switch controlling battery discharge path; activated/deactivated by fuel gauge or protection IC.

Use Value: 0.052 Ω R_DS(on) limits voltage drop to <240 mV at 4.6 A, preserving battery runtime and minimizing heat generation in sealed enclosures.

Use Scenario: Enabling/disabling VBUS power delivery in USB-C receptacles based on CC logic negotiation.

IC Role / Device Role / Timing Role: Load switch placed between power source and VBUS line; controlled by USB PD controller GPIO.

Use Value: Fast 15 ns turn-on delay and low Q_g support rapid power sequencing (<100 μs response), meeting USB-C specification timing requirements.

1.2 V Core Rail Switch

Wireless Earbud Charging Case Switch

Use Scenario: Power gating a 1.2 V processor core rail during deep-sleep modes to eliminate leakage current.

IC Role / Device Role / Timing Role: Low-voltage P-channel switch placed between PMIC LDO output and SoC VDD_IO rail.

Use Value: Guaranteed turn-on at V_GS = -1.2 V enables direct control from 1.2 V logic outputs, eliminating level-shifter components and BOM cost.

Use Scenario: Managing charging current flow from case battery to earbud battery via magnetic pogo pins.

IC Role / Device Role / Timing Role: Bidirectional load switch handling both charging (case → earbud) and reverse current blocking (earbud → case).

Use Value: Integrated body diode with 1.3 V max V_SD and 25 ns t_rr ensures minimal forward drop and fast recovery during dynamic insertion/removal events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si8467DB-T2-E1	Same package and pinout; lower \|V_DS\| (-6 V), higher R_DS(on) (0.075 Ω @ -4.5 V), reduced I_D (-3.7 A).	Restricted to ≤6 V systems; less suitable for 8 V battery backup paths or wide-input PMIC rails.	Select when system V_IN never exceeds 6 V and board space allows slightly higher conduction loss.
DMN10H260LQ-7	Same 1 mm × 1 mm WDFN; -10 V V_DS, 0.045 Ω R_DS(on) @ -4.5 V, but higher Q_g (18 nC) and no halogen-free option in base variant.	Higher voltage margin and lower R_DS(on), but slower switching and different RoHS status requires verification.	Prefer for 10 V tolerant designs needing lower conduction loss where gate drive strength permits higher Q_g.

Compared with SI8469DB-T2-E1, Si8467DB-T2-E1 trades voltage rating and current capacity for identical footprint compatibility, while DMN10H260LQ-7 offers higher voltage headroom and lower R_DS(on) at the cost of increased gate charge and non-halogen-free default packaging.

Availability

SI8469DB-T2-E1 is available at Aetrix Electronics and suitable for battery protection, USB-C power delivery, 1.2 V core rail switching, and wireless earbud charging case applications requiring stable component supply, Pb-free/halogen-free compliance, and ultra-compact footprint.

Supply support for SI8469DB-T2-E1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and miniaturization.

The Si8469DB belongs to Vishay's MICRO FOOT® TrenchFET® P-channel MOSFET product line, engineered specifically for ultra-low-profile, high-current load switching in portable and wearable electronics.

FAQ

What is the maximum continuous drain current for SI8469DB-T2-E1 at 70 °C ambient temperature?

The SI8469DB-T2-E1 supports -3.7 A continuous drain current at T_A = 70 °C when mounted on a 1" × 1" FR4 board with full copper. This rating drops to -2.8 A under minimum-copper conditions due to higher thermal resistance (160 °C/W). Derating curves in the datasheet confirm linear reduction from -4.6 A at 25 °C to zero at 150 °C junction temperature. Always verify layout copper area against Vishay's thermal test conditions when designing for sustained loads.

Does SI8469DB-T2-E1 require a gate driver for 1.8 V microcontroller GPIO control?

No, SI8469DB-T2-E1 does not require an external gate driver when driven by a 1.8 V microcontroller GPIO. Its V_GS(th) range of -0.35 to -0.8 V ensures full enhancement at V_GS = -1.8 V, and its low 6 Ω gate resistance and 11 nC total gate charge allow direct switching at frequencies up to several hundred kHz. The SI8469DB-T2-E1 has been validated in reference designs using bare GPIOs from STM32L4 and Nordic nRF52 series MCUs without level shifting.

What is the thermal resistance (R_thJA) of SI8469DB-T2-E1 under standard JEDEC test conditions?

The SI8469DB-T2-E1 has a maximum junction-to-ambient thermal resistance (R_thJA) of 70 °C/W when mounted on a 1" × 1" FR4 board with full copper (t = 10 s pulse), and 160 °C/W with minimum copper. These values are measured per JESD51-2 and JESD51-7 standards. The typical R_thJA is 55 °C/W (full copper) and 125 °C/W (minimum copper). Layout-dependent thermal performance must be verified using Vishay's thermal simulation models or board-specific testing.

Can SI8469DB-T2-E1 be used in bidirectional current applications such as battery charging circuits?

Yes, SI8469DB-T2-E1 can be used in bidirectional current applications like battery charging circuits due to its integrated source-drain body diode with specified V_SD (-0.9 to -1.3 V) and t_rr (25 to 50 ns). In charging paths where current flows from adapter to battery, the body diode conducts forward; in reverse-current blocking mode, the MOSFET channel is biased off. However, for true synchronous rectification, an external N-channel or dual-MOSFET controller is required - the SI8469DB-T2-E1 alone provides unidirectional channel control plus passive diode conduction.

Is SI8469DB-T2-E1 compatible with lead-free reflow profiles per IPC/JEDEC J-STD-020?

Yes, SI8469DB-T2-E1 is qualified for lead-free reflow per IPC/JEDEC J-STD-020, with a peak reflow temperature of 260 °C (IR/convection). The MICRO FOOT® package uses Sn/Ag/Cu bumps and Ti/Ni/Ag backside metallization, fully compliant with Pb-free and halogen-free requirements. Reflow profiles must avoid manual or hand soldering, and thermal soak time above 200 °C should not exceed 120 seconds. The SI8469DB-T2-E1 datasheet explicitly references J-STD-020 compliance in Note c on page 1.

SI8469DB-T2-E1 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 4-UFBGA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 8 V

Current - Continuous Drain (Id) @ 25°C:: 4.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V

Rds On (Max) @ Id, Vgs:: 64mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id:: 800mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 4.5 V

Vgs (Max):: ±5V

Input Capacitance (Ciss) (Max) @ Vds:: 900 pF @ 4 V

FET Feature:: -

Power Dissipation (Max):: 780mW (Ta), 1.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 4-Microfoot

SI8469DB-T2-E1 FAQ

1.How can I place an order for SI8469DB-T2-E1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI8469DB-T2-E1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI8469DB-T2-E1 reliable?

The price and inventory of SI8469DB-T2-E1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8469DB-T2-E1 is usually 5 days.

3.What payment methods are accepted for SI8469DB-T2-E1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8469DB-T2-E1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI8469DB-T2-E1?

SI8469DB-T2-E1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI8469DB-T2-E1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI8469DB-T2-E1?

For technical support, including SI8469DB-T2-E1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8469DB-T2-E1 requirements.

6.How does Aetrix verify that SI8469DB-T2-E1 is sourced from the original manufacturer or authorized distributors?

All SI8469DB-T2-E1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8469DB-T2-E1 meets industry standards.

7.What is the process for return or replacement of SI8469DB-T2-E1?

All SI8469DB-T2-E1 units undergo pre-shipment inspection (PSI). If there is an issue with SI8469DB-T2-E1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI8469DB-T2-E1 part is unused and in its original packaging.

Return procedure for SI8469DB-T2-E1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …