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Vishay Siliconix SI8473EDB-T1-E1
- Part No.:
- SI8473EDB-T1-E1
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 4-XFBGA, CSPBGA
- Datasheet:
-
SI8473EDB-T1-E1.pdf
- Description:
- MOSFET P-CH 20V 4MICROFOOT
- Quantity:
- Payment:
- Shipping:
Inventory:3,929
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Product details
Overview
SI8473EDB-T1-E1 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET in MICRO FOOT® 1.6 × 1.6 mm wafer-level chip-scale package, rated for −20 V VDS, 0.041 Ω RDS(on) at VGS = −4.5 V, and −7.1 A continuous drain current (TA = 25 °C). It integrates gate-source overvoltage protection and delivers low on-resistance for high-efficiency load switching in space-constrained portable power systems.
For engineers reviewing the SI8473EDB-T1-E1 datasheet, SI8473EDB-T1-E1 pinout, SI8473EDB-T1-E1 application, or SI8473EDB-T1-E1 equivalent, key selection criteria include its −20 V rating, 0.041 Ω on-resistance at −4.5 V gate drive, MICRO FOOT® 4-bump layout, gate-source OVP feature, and suitability for reverse-polarity protection and battery-switching circuits.
Technical Context
This device operates as a single P-channel MOSFET with enhancement-mode behavior and built-in gate-source overvoltage protection circuitry. Its trench-based silicon structure enables low RDS(on) and fast switching characteristics, including 15–25 μs turn-on delay and 100–150 ns body diode reverse recovery time.
The MICRO FOOT® package uses four solder bumps (0.8 mm pitch, Sn/Ag/Cu composition) directly on the die active surface, eliminating leadframe parasitics and enabling ultra-low thermal resistance (RthJA = 35–45 °C/W on full-copper FR4). Gate threshold voltage is specified between −0.6 V and −1.5 V at ID = −250 μA.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −20 V - Maximum drain-source blocking voltage; defines safe operating range in reverse-polarity or high-side switch configurations. |
| RDS(on) | 0.041 Ω at VGS = −4.5 V - Enables <150 mW conduction loss at 6 A, critical for thermally constrained battery-switch applications. |
| ID (continuous) | −7.1 A at TA = 25 °C - Supports high-current load switching without external heatsinking on standard PCB layouts. |
| VGS(th) | −0.6 to −1.5 V - Ensures reliable turn-on with low-voltage control logic (e.g., 1.8 V or 3.3 V GPIO), minimizing gate drive complexity. |
| Qrr | 17–35 nC - Low reverse recovery charge reduces switching losses and EMI in synchronous rectifier or bidirectional switch topologies. |
| RthJA | 35–45 °C/W (full copper) - Enables >2 W power dissipation at ambient temperatures up to 70 °C without derating. |
| ESD Rating | 3000 V HBM - Provides robust handling during board assembly and end-use in consumer electronics environments. |
Pinout & Package
MICRO FOOT® 1.6 mm × 1.6 mm wafer-level chip-scale package with four solder bumps on the active die surface. Bump composition: 95.5/3.8/0.7 Sn/Ag/Cu; bump pitch: 0.8 mm; bump height: 0.26–0.29 mm. Backside marked "8473E".
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts −4.5 V or −2.5 V logic-level drive; includes integrated gate-source OVP clamp. |
| 2 (D) | Drain | Main current-carrying terminal; connected to input rail in high-side load switch configuration. |
| 3 (D) | Drain | Second drain connection; paralleled internally with Pin 2 to reduce package inductance and improve current sharing. |
| 4 (S) | Source | Reference terminal; tied to system ground or battery negative in load-switch applications; body diode anode. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® silicon technology | Delivers 0.041 Ω RDS(on) at −4.5 V in 1.6 × 1.6 mm footprint-enables compact, high-efficiency power switches without discrete gate drivers. |
| Integrated gate-source overvoltage protection | Clamps VGS to ±12 V absolute maximum, eliminating need for external Zener diodes in reverse-polarity protection circuits. |
| MICRO FOOT® WL-CSP packaging | Reduces board area by >80% vs. TSSOP-8; lowers thermal resistance by 50% and eliminates bond-wire inductance for faster switching. |
| Lead (Pb)-free and halogen-free construction | Complies with RoHS Directive 2011/65/EU and JEDEC JS709C; suitable for consumer, industrial, and medical-grade portable devices. |
| Low Qg and fast switching | Typical gate resistance of 3.6 kΩ and 7–25 μs propagation delays enable efficient operation at 100–500 kHz PWM frequencies. |
Applications
| Reverse-Polarity Protection | Battery Load Switch |
|---|---|
Use Scenario: Preventing damage to downstream circuitry when a user incorrectly inserts a barrel-jack or USB-C power adapter with reversed polarity. IC Role / Device Role / Timing Role: High-side P-channel MOSFET configured as ideal diode replacement, activated only when input polarity is correct. Use Value: Eliminates 0.3–0.7 V forward drop of Schottky diodes, preserving >98% of input voltage and reducing thermal load in compact enclosures. | Use Scenario: Enabling/disabling power to a subsystem (e.g., display, sensor array, or radio) in a battery-powered IoT node to extend runtime. IC Role / Device Role / Timing Role: Low-RDS(on) load switch controlled by microcontroller GPIO; supports fast turn-on (<25 μs) and soft-start via gate RC network. Use Value: Limits inrush current and prevents brownout during hot-plug events while maintaining <150 mW conduction loss at full load. |
| Charger Path Management | USB OTG Power Switch |
Use Scenario: Isolating battery from charging IC during charge termination or fault conditions in single-cell Li-ion packs. IC Role / Device Role / Timing Role: Bidirectional switch placed between charger output and battery terminal; leverages body diode for discharge path. Use Value: Enables precise charge/discharge path control with <1.2 V body diode forward voltage and 30–60 ns reverse recovery for minimal shoot-through risk. | Use Scenario: Providing 5 V VBUS power from a mobile device to peripheral accessories (e.g., USB flash drives) in On-The-Go mode. IC Role / Device Role / Timing Role: High-side switch controlling VBUS delivery; driven by USB controller's VBUS_EN signal with gate-source OVP safeguarding against cable ESD transients. Use Value: Guarantees ±12 V gate protection and 3000 V HBM ESD immunity-critical for unshielded USB data/power interfaces exposed to user handling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8471EDB-T1-E1 | Same package and pinout; lower RDS(on) (0.028 Ω @ −4.5 V) but reduced VDS rating (−12 V). | Not suitable for −20 V reverse-polarity protection; limited to 3.3 V or 5 V rail switching. | Select only if system VIN ≤ 12 V and lowest possible conduction loss is prioritized over voltage margin. |
| DMN2020LFG-7 | Different package (X2-DFN1006-3); higher RDS(on) (0.055 Ω @ −4.5 V); no integrated gate-source OVP. | Requires external 12 V Zener clamp; less robust in ESD-prone USB or battery-contact environments. | Choose only if footprint flexibility exists and cost sensitivity outweighs design simplification from integrated OVP. |
Compared with Si8471EDB-T1-E1 and DMN2020LFG-7, SI8473EDB-T1-E1 uniquely balances −20 V rating, 0.041 Ω on-resistance, integrated gate-source OVP, and MICRO FOOT® size-making it optimal for space-limited, high-reliability battery-switch and reverse-protection designs where voltage margin and protection simplicity are non-negotiable.
Availability
SI8473EDB-T1-E1 is available at Aetrix Electronics and suitable for reverse-polarity protection, battery load switching, and USB OTG power management requiring stable component supply across production lifecycles.
Supply support for SI8473EDB-T1-E1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.
The SI8473EDB-T1-E1 belongs to Vishay's MICRO FOOT® TrenchFET® MOSFET product line, engineered specifically for ultra-compact, high-efficiency power switching in portable and battery-powered electronics where board space, thermal performance, and protection integration are critical.
FAQ
What is the maximum gate-source voltage rating for SI8473EDB-T1-E1?
The SI8473EDB-T1-E1 has a maximum gate-source voltage rating of ±12 V, as defined in its Absolute Maximum Ratings table. This limit is enforced by internal gate-source overvoltage protection circuitry, which clamps transient excursions beyond this range-eliminating the need for external Zener diodes in most applications. The SI8473EDB-T1-E1 maintains this specification across its full operating temperature range of −55 °C to +150 °C.
Does SI8473EDB-T1-E1 require a gate resistor for stable operation?
The SI8473EDB-T1-E1 does not require a gate resistor for basic DC switching, but a small series gate resistor (typically 1–10 Ω) is recommended to dampen ringing and control dV/dt during fast transitions. Its typical gate resistance is 3.6 kΩ, and dynamic parameters-including 15–25 μs turn-on delay and 100–150 ns body diode reverse recovery-are characterized with Rg = 1 Ω in the datasheet. Using SI8473EDB-T1-E1 without a gate resistor may cause overshoot or EMI in high-speed PWM applications.
Can SI8473EDB-T1-E1 be used in a synchronous rectifier configuration?
The SI8473EDB-T1-E1 is not optimized for synchronous rectification due to its relatively high Qrr (17–35 nC) and body diode VSD (−0.85 to −1.2 V), which increase switching losses compared to dedicated synchronous rectifier MOSFETs. While it can conduct reverse current via its intrinsic body diode, the SI8473EDB-T1-E1 lacks the ultra-low Qg/Qrr ratio and optimized body diode timing required for high-frequency (>1 MHz) flyback or LLC rectification. Use only in low-frequency (<200 kHz), low-duty-cycle freewheeling roles.
What is the thermal resistance from junction to ambient for SI8473EDB-T1-E1 on a standard PCB?
For SI8473EDB-T1-E1 mounted on a 1" × 1" FR4 board with full copper, the typical junction-to-ambient thermal resistance (RthJA) is 35 °C/W, with a maximum of 45 °C/W. With minimum copper, RthJA rises to 85–110 °C/W. These values assume t = 5 s pulse testing per JEDEC JESD51-14 and are validated for the MICRO FOOT® 1.6 × 1.6 mm package using its four-solder-bump thermal path. Derating curves in the SI8473EDB-T1-E1 datasheet confirm 2.7 W max power dissipation at TA = 25 °C.
Is SI8473EDB-T1-E1 compatible with lead-free reflow profiles?
Yes, SI8473EDB-T1-E1 is qualified for lead-free reflow per IPC/JEDEC J-STD-020, with a peak reflow temperature of 260 °C (IR/convection). Its MICRO FOOT® package uses Sn/Ag/Cu solder bumps and is rated for standard Pb-free thermal profiles. The device marking "T1-E1" explicitly denotes lead (Pb)-free and halogen-free construction, and the datasheet specifies compatibility with both no-clean and water-soluble pastes such as UP78 eutectic 63Sn/37Pb type-3.
SI8473EDB-T1-E1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 4-XFBGA, CSPBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 41mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.1W (Ta), 2.7W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 4-Microfoot
SI8473EDB-T1-E1 FAQ
1.How can I place an order for SI8473EDB-T1-E1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI8473EDB-T1-E1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI8473EDB-T1-E1 reliable?
The price and inventory of SI8473EDB-T1-E1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8473EDB-T1-E1 is usually 5 days.
3.What payment methods are accepted for SI8473EDB-T1-E1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8473EDB-T1-E1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI8473EDB-T1-E1?
SI8473EDB-T1-E1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI8473EDB-T1-E1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI8473EDB-T1-E1?
For technical support, including SI8473EDB-T1-E1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8473EDB-T1-E1 requirements.
6.How does Aetrix verify that SI8473EDB-T1-E1 is sourced from the original manufacturer or authorized distributors?
All SI8473EDB-T1-E1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8473EDB-T1-E1 meets industry standards.
7.What is the process for return or replacement of SI8473EDB-T1-E1?
All SI8473EDB-T1-E1 units undergo pre-shipment inspection (PSI). If there is an issue with SI8473EDB-T1-E1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI8473EDB-T1-E1 part is unused and in its original packaging.
Return procedure for SI8473EDB-T1-E1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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