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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI8475EDB-T1-E1

Name: SI8475EDB-T1-E1
Brand: Vishay Siliconix
SKU: SI8475EDB-T1-E1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI8475EDB-T1-E1

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 4-XFBGA, CSPBGA

Datasheet:: SI8475EDB-T1-E1.pdf

Description:: MOSFET P-CH 20V 4MICROFOOT

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Product details

Overview

SI8475EDB-T1-E1 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® power MOSFET in MICRO FOOT® 1.6 mm × 1.6 mm wafer-level chip-scale package, rated for −20 V V_DS, 0.032 Ω R_DS(on) at V_GS = −4.5 V, and −7.7 A continuous drain current (T_A = 25 °C, full copper board). It integrates gate-source overvoltage protection and delivers low on-resistance for portable load switching.

For engineers reviewing the SI8475EDB-T1-E1 datasheet, SI8475EDB-T1-E1 pinout, SI8475EDB-T1-E1 application, or SI8475EDB-T1-E1 equivalent, key selection criteria include its −20 V rating, 0.032 Ω on-resistance at −4.5 V drive, MICRO FOOT® footprint compatibility with space-constrained PCB layouts, and built-in gate-source OVP for reverse-polarity protection circuits.

Technical Context

This device operates as a single P-channel switch with enhancement-mode behavior, requiring negative gate-to-source voltage for conduction. Its trench-based silicon structure enables low R_DS(on) and fast switching dynamics, including 15–25 μs turn-on delay and 80–120 ns fall time under standard test conditions.

The integrated gate-source overvoltage protection circuit clamps V_GS to prevent damage during transient events, while the body diode supports reverse-current paths with V_SD = −0.85 to −1.2 V at −1 A and t_rr = 30–60 ns. Thermal performance is defined by R_thJA = 35–45 °C/W (full copper) and 85–110 °C/W (minimum copper).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−20 V: Maximum drain-source blocking voltage; defines safe operating range in reverse-polarity or high-side switch configurations.
R_DS(on)	0.032 Ω at V_GS = −4.5 V: Low conduction loss enabling efficient battery-switching in portable devices at typical logic-level drive.
I_D (continuous)	−7.7 A at T_A = 25 °C (full copper): Sustained load current capability for compact DC-DC input stages or USB power delivery switches.
V_GS(th)	−0.6 to −1.5 V: Threshold voltage range ensuring reliable turn-on with common microcontroller GPIO outputs.
Q_rr	15–30 nC: Reverse recovery charge of internal body diode; impacts efficiency and EMI in synchronous rectification or flyback snubberless designs.
R_thJA	35–45 °C/W (full copper): Junction-to-ambient thermal resistance defining maximum power dissipation without heatsinking in standard FR4 layouts.

Pinout & Package

MICRO FOOT® 1.6 mm × 1.6 mm wafer-level chip-scale package with four solder bumps; no leadframe or molded plastic enclosure. Bump pitch is 0.8 mm; bump height is 0.290 mm; backside marked "8475E".

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts −4.5 V or −2.5 V logic-level drive; includes integrated overvoltage clamp to ±12 V.
2 (D)	Drain	High-side or low-side switched node; connects to battery or supply rail; handles −7.7 A continuous current.
3 (D)	Drain	Second drain bump; paralleled internally to reduce current density and thermal resistance at the die edge.
4 (S)	Source	Reference terminal for gate drive; tied to system ground or load return; carries full load current and body diode forward current.

Key Features

Feature	Design Value
TrenchFET® technology	Enables 0.032 Ω R_DS(on) at −4.5 V in 1.6 mm × 1.6 mm footprint-reducing board area vs. SO-8 or TSOP-6 alternatives by >80%.
Gate-source overvoltage protection	Clamps V_GS within ±12 V absolute max rating, eliminating need for external Zener diodes in reverse-polarity protection circuits.
ESD robustness	3000 V HBM rating ensures reliability during automated assembly and end-user handling in consumer electronics.
Body diode performance	V_SD = −0.85 V at −1 A and t_rr = 30 ns enable use in freewheeling paths without external Schottky diodes in low-power DC-DC converters.

Applications

Smartphone Battery Protection	USB-C Power Delivery Switch
Use Scenario: Isolating main Li-ion battery from system during fault conditions or deep discharge. IC Role / Device Role / Timing Role: High-side load switch controlled by PMIC or baseband processor GPIO. Use Value: 0.032 Ω R_DS(on) minimizes voltage drop and self-heating during sustained 3–5 A discharge, extending runtime and thermal margin.	Use Scenario: Enabling/disabling VBUS path between USB-C port and system power rail based on CC logic detection. IC Role / Device Role / Timing Role: Bidirectional load switch supporting sink/source modes; body diode conducts reverse current during cable insertion. Use Value: Gate-source OVP prevents latch-up during hot-plug transients; 30 ns body diode t_rr reduces switching losses in auto-negotiation sequences.
Wireless Earbud Charging Case	Portable Medical Sensor Power Gating
Use Scenario: Controlling power to charging circuitry inside compact earbud case to prevent battery drain when not in use. IC Role / Device Role / Timing Role: Low-quiescent-load battery disconnect switch activated by MCU sleep/wake signal. Use Value: −0.6 V V_GS(th) ensures turn-on with 1.8 V I/O; 1.6 mm × 1.6 mm footprint fits tight 3D layout constraints near battery connector.	Use Scenario: Gating power to analog front-end and BLE radio only during active measurement cycles in wearable biosensors. IC Role / Device Role / Timing Role: Precision load switch with minimal leakage (IDSS ≤ −1 μA) to preserve battery life during multi-day standby. Use Value: −1 μA IDSS at 25 °C and −10 μA at 70 °C ensures <10 nA average leakage per switch in multi-channel sensor arrays.

Smartphone Battery Protection

USB-C Power Delivery Switch

Use Scenario: Isolating main Li-ion battery from system during fault conditions or deep discharge.

IC Role / Device Role / Timing Role: High-side load switch controlled by PMIC or baseband processor GPIO.

Use Value: 0.032 Ω R_DS(on) minimizes voltage drop and self-heating during sustained 3–5 A discharge, extending runtime and thermal margin.

Use Scenario: Enabling/disabling VBUS path between USB-C port and system power rail based on CC logic detection.

IC Role / Device Role / Timing Role: Bidirectional load switch supporting sink/source modes; body diode conducts reverse current during cable insertion.

Use Value: Gate-source OVP prevents latch-up during hot-plug transients; 30 ns body diode t_rr reduces switching losses in auto-negotiation sequences.

Wireless Earbud Charging Case

Portable Medical Sensor Power Gating

Use Scenario: Controlling power to charging circuitry inside compact earbud case to prevent battery drain when not in use.

IC Role / Device Role / Timing Role: Low-quiescent-load battery disconnect switch activated by MCU sleep/wake signal.

Use Value: −0.6 V V_GS(th) ensures turn-on with 1.8 V I/O; 1.6 mm × 1.6 mm footprint fits tight 3D layout constraints near battery connector.

Use Scenario: Gating power to analog front-end and BLE radio only during active measurement cycles in wearable biosensors.

IC Role / Device Role / Timing Role: Precision load switch with minimal leakage (IDSS ≤ −1 μA) to preserve battery life during multi-day standby.

Use Value: −1 μA IDSS at 25 °C and −10 μA at 70 °C ensures <10 nA average leakage per switch in multi-channel sensor arrays.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si8473EDB-T1-E1	Same package and pinout; −30 V V_DS, 0.055 Ω R_DS(on) at −4.5 V, −5.5 A I_D.	Higher voltage tolerance but higher on-resistance; suitable where 24 V input rails or wider safety margin required.	Select when system input exceeds −20 V or where derated current capability is acceptable for enhanced ruggedness.
DMN2011UFD-7	1.6 mm × 1.6 mm WLCSP; −20 V V_DS, 0.035 Ω R_DS(on) at −4.5 V, −6.5 A I_D; no integrated gate OVP.	Lacks gate-source overvoltage protection; requires external clamping for reverse-polarity resilience.	Choose when cost sensitivity outweighs OVP requirement and layout allows discrete protection components.

Compared with SI8475EDB-T1-E1, Si8473EDB-T1-E1 trades lower R_DS(on) for higher voltage rating and reduced current capacity, while DMN2011UFD-7 matches voltage and footprint but omits gate OVP-requiring additional design effort for transient robustness.

Availability

SI8475EDB-T1-E1 is available at Aetrix Electronics and suitable for smartphone battery protection, USB-C power delivery switching, and portable medical sensor power gating requiring stable component supply across production ramps and long-lifecycle programs.

Supply support for SI8475EDB-T1-E1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-efficiency, miniaturized solutions.

The SI8475EDB-T1-E1 belongs to Vishay's MICRO FOOT® TrenchFET® family, engineered specifically for space-constrained portable electronics requiring ultra-small footprint, low on-resistance, and integrated protection features.

FAQ

What is the maximum gate-source voltage rating for SI8475EDB-T1-E1?

The absolute maximum gate-source voltage (V_GS) for SI8475EDB-T1-E1 is ±12 V. This rating is enforced by an integrated gate-source overvoltage protection circuit that clamps transients, making external Zener diodes unnecessary in most reverse-polarity protection designs. Operation beyond ±12 V risks permanent damage, even if duration is brief.

Does SI8475EDB-T1-E1 require a gate resistor in series with the driving GPIO?

SI8475EDB-T1-E1 does not require a gate resistor for basic on/off switching at moderate frequencies (<100 kHz), due to its low gate charge (Q_g ≈ 4.5 nC typical) and integrated gate protection. However, a 10–100 Ω resistor is recommended to dampen ringing during fast edge transitions in noise-sensitive applications or when driving from high-impedance sources.

Can SI8475EDB-T1-E1 be used in a high-side configuration with 5 V logic control?

No-SI8475EDB-T1-E1 is a P-channel MOSFET requiring a gate voltage *lower* than the source to conduct. With source tied to +5 V (high-side), the gate must be pulled to ≤3.5 V (e.g., 0 V) to achieve sufficient V_GS (≤−1.5 V). Direct 5 V logic cannot turn it off; a level-shifting driver or charge pump is needed for true high-side switching with 5 V control signals.

What is the thermal resistance junction-to-ambient (R_thJA) for SI8475EDB-T1-E1 on a standard PCB?

For SI8475EDB-T1-E1 mounted on a 1" × 1" FR4 board with full copper, R_thJA is 35 °C/W (typical) and 45 °C/W (maximum). With minimum copper, it rises to 85–110 °C/W. These values assume 5-second pulse testing and define the upper limit of power dissipation before exceeding T_J = 150 °C.

Is SI8475EDB-T1-E1 compatible with lead-free reflow processes?

Yes-SI8475EDB-T1-E1 is explicitly qualified for lead-free reflow per IPC/JEDEC J-STD-020, with peak reflow temperature up to 260 °C. The MICRO FOOT® package uses Sn/Ag/Cu (95.5/3.8/0.7) solder bumps and is rated for IR/convection profiles meeting JEDEC Class 3 moisture sensitivity level (MSL3) requirements.

SI8475EDB-T1-E1 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 4-XFBGA, CSPBGA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 4.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 32mOhm @ 1A, 4.5V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.1W (Ta), 2.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 4-Microfoot

SI8475EDB-T1-E1 FAQ

1.How can I place an order for SI8475EDB-T1-E1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI8475EDB-T1-E1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI8475EDB-T1-E1 reliable?

The price and inventory of SI8475EDB-T1-E1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8475EDB-T1-E1 is usually 5 days.

3.What payment methods are accepted for SI8475EDB-T1-E1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8475EDB-T1-E1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI8475EDB-T1-E1?

SI8475EDB-T1-E1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI8475EDB-T1-E1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI8475EDB-T1-E1?

For technical support, including SI8475EDB-T1-E1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8475EDB-T1-E1 requirements.

6.How does Aetrix verify that SI8475EDB-T1-E1 is sourced from the original manufacturer or authorized distributors?

All SI8475EDB-T1-E1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8475EDB-T1-E1 meets industry standards.

7.What is the process for return or replacement of SI8475EDB-T1-E1?

All SI8475EDB-T1-E1 units undergo pre-shipment inspection (PSI). If there is an issue with SI8475EDB-T1-E1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI8475EDB-T1-E1 part is unused and in its original packaging.

Return procedure for SI8475EDB-T1-E1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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