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Vishay Siliconix SI8481DB-T1-E1
- Part No.:
- SI8481DB-T1-E1
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 4-UFBGA
- Datasheet:
-
SI8481DB-T1-E1.pdf
- Description:
- MOSFET P-CH 20V 9.7A 4MICRO FOOT
- Quantity:
- Payment:
- Shipping:
Inventory:9,574
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Product details
Overview
SI8481DB-T1-E1 from Vishay Siliconix is a P-channel enhancement-mode MOSFET designed for low-voltage load switching in space-constrained portable electronics, featuring -20 V VDS, 0.021 Ω RDS(on) at VGS = -4.5 V, and MICRO FOOT® 1.6 × 1.6 mm package with 0.6 mm max height. It delivers high current capability (-9.7 A continuous at TA = 25 °C) with low conduction loss and fast switching (Qg = 31.2 nC typ).
For engineers reviewing the SI8481DB-T1-E1 datasheet, SI8481DB-T1-E1 pinout, SI8481DB-T1-E1 application, or SI8481DB-T1-E1 equivalent, this device is selected for battery-powered load control where low on-resistance, minimal board area, and thermal efficiency under pulsed or steady-state conditions are critical design requirements.
Technical Context
This MOSFET uses Vishay's TrenchFET® Gen III process to achieve optimized gate charge (Qg = 31.2 nC at VGS = -4.5 V) and low RDS(on) across VGS thresholds from -1.8 V to -4.5 V. Its body diode exhibits trr = 150 ns (typ) and Qrr = 235 nC (typ), supporting efficient reverse recovery in synchronous or flyback configurations.
The device operates with VGS(th) = -0.4 V to -0.9 V and supports gate drive from standard logic-level sources down to 1.8 V. Thermal resistance is rated at RthJA = 35 °C/W (typ) on full-copper FR4 - enabling compact thermal design without external heatsinking in handheld and wearable applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum drain-source blocking voltage compatible with 3.3 V/5 V system rails and Li-ion battery inputs. |
| RDS(on) @ VGS = -4.5 V | 0.021 Ω - Enables <100 mV drop at 4.5 A load, minimizing power loss in always-on or hot-swap circuits. |
| Continuous ID | -9.7 A @ TA = 25 °C - Supports high-current load switching (e.g., USB PD port power path, display backlight enable) without derating. |
| Qg | 31.2 nC - Low gate charge reduces driver power demand and enables fast turn-on (<30 ns td(on)) with minimal gate resistor. |
| Package | MICRO FOOT® 1.6 × 1.6 mm - Ultra-thin (0.6 mm max height), bump-based land-grid array ideal for PCBs with strict Z-height limits. |
| Body Diode VSD | -0.8 V to -1.2 V @ IS = -3 A - Low forward voltage improves efficiency in bidirectional or freewheeling paths. |
| TJ Range | -55 °C to +150 °C - Qualified for extended industrial and automotive cabin-temperature environments. |
Pinout & Package
MICRO FOOT® 1.6 × 1.6 mm package with four solder bumps (0.8 mm pitch); no leads; bottom-side terminations only. Bump composition: 95.5/3.8/0.7 Sn/Ag/Cu. Backside coated with Ti/Ni/Ag layer. Pin 1 identified by laser mark on die backside.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Bump) | Gate (G) | Control input; accepts logic-level gate drive down to -1.8 V; requires no level-shifting for 1.8 V/3.3 V microcontrollers. |
| 2 (Bump) | Source (S) | Return path for load current; tied to system ground or battery negative in high-side switch configurations. |
| 3 (Bump) | Drain (D) | High-current output node; connects to load; thermally coupled to PCB copper for enhanced heat dissipation. |
| 4 (Bump) | Drain (D) | Second drain terminal; paralleled internally with Pin 3 to reduce package inductance and improve current sharing. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® Gen III process | Enables 0.021 Ω RDS(on) at -4.5 V while maintaining robust short-circuit ruggedness and gate oxide reliability. |
| 0.6 mm maximum height | Allows integration into ultra-thin devices (e.g., smartwatches, hearing aids) where Z-axis clearance is constrained by batteries or displays. |
| Low Qgd/Qg ratio (6.3/31.2 nC) | Improves switching stability and reduces risk of shoot-through in half-bridge topologies with limited gate drive strength. |
| Specified RDS(on) down to VGS = -1.8 V | Supports direct interface with 1.8 V I/O domains without external level shifters - critical for low-power SoC designs. |
| Body diode trr = 150 ns (typ) | Minimizes reverse recovery losses in DC-DC converters or motor drive freewheeling paths operating up to 1 MHz. |
Applications
| Smartphone Power Management | Wearable Device Load Switch |
|---|---|
Use Scenario: Enabling/disabling camera module, NFC, or GPS subsystems during sleep mode to minimize quiescent current. IC Role / Device Role: High-side load switch controlling power rail delivery to peripheral ICs. Use Value: Achieves <1 μA off-state leakage and <100 mV dropout at 2 A, extending battery runtime by >12% in multi-day standby cycles. |
Use Scenario: Isolating sensor cluster (accelerometer, gyroscope, HRM) from main SoC during motionless periods. IC Role / Device Role: Logic-controlled power gate managing domain-specific voltage domains. Use Value: 0.6 mm profile fits beneath curved battery cells; low RDS(on) prevents thermal buildup in sealed enclosures. |
| USB-C Port Power Path | Bluetooth Earbud Charging Circuit |
Use Scenario: Controlling VBUS routing between upstream host and downstream device in dual-role ports. IC Role / Device Role: Bidirectional load switch with integrated body diode supporting reverse current flow. Use Value: Body diode VSD ≤ -1.2 V ensures low-loss charging path; 30 A pulsed rating handles USB PD inrush safely. |
Use Scenario: Managing charging current from case-to-earbud contacts while preventing reverse discharge. IC Role / Device Role: Reverse-current blocking switch in linear charger feedback loop. Use Value: -0.9 V VGS(th) allows reliable turn-off with 2.8 V LDO output; 175 °C/W RthJA (min-copper) suits tiny PCB footprints. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8482DB-T1-E1 | Same package and pinout; higher RDS(on) (0.028 Ω @ -4.5 V) and lower ID (-7.5 A), optimized for cost-sensitive mid-power loads. | Less suitable for >6 A continuous loads but offers tighter VGS(th) distribution for production consistency. | Select when thermal margin exceeds requirement and BOM cost reduction is prioritized over peak current capability. |
| DMN2020LFG-7 | 1.6 × 1.6 mm DFN; RDS(on) = 0.022 Ω @ -4.5 V; Qg = 22 nC (lower), but VGS(th) = -1.0 V min - less compatible with 1.8 V logic. | Requires gate pull-up for reliable turn-off in 1.8 V systems; better suited for 3.3 V–5 V control domains. | Choose when gate drive is ≥2.5 V and faster switching (lower Qg) outweighs 1.8 V compatibility needs. |
Compared with SI8481DB-T1-E1, Si8482DB-T1-E1 trades current capacity for cost, while DMN2020LFG-7 reduces switching loss but sacrifices low-voltage gate compatibility - making SI8481DB-T1-E1 optimal for 1.8 V–4.5 V logic-driven, high-current portable power gating.
Availability
SI8481DB-T1-E1 is available at Aetrix Electronics and suitable for smartphone power management, wearable device load switching, USB-C port power path control, and Bluetooth earbud charging circuits requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production lots.
Supply support for SI8481DB-T1-E1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-efficiency, miniaturized power solutions for consumer, computing, and industrial markets.
The SI8481DB-T1-E1 belongs to Vishay's MICRO FOOT® TrenchFET® Gen III P-channel MOSFET family, engineered specifically for ultra-compact, high-current load switching in battery-powered mobile and wearable electronics.
FAQ
What is the maximum continuous drain current rating for SI8481DB-T1-E1 at 70 °C ambient temperature?
The SI8481DB-T1-E1 supports -7.8 A continuous drain current at TA = 70 °C with full-copper FR4 mounting (t = 5 s). This rating reflects thermal derating due to reduced junction-to-ambient thermal resistance efficiency at elevated ambient temperatures, and must be validated against actual PCB layout and airflow conditions in the end application.
Does SI8481DB-T1-E1 require a gate pull-up resistor for reliable turn-off?
No - SI8481DB-T1-E1 has a guaranteed VGS(th) of -0.4 V to -0.9 V, meaning it fully turns off with VGS = 0 V. A gate pull-up is unnecessary; instead, a gate driver or microcontroller GPIO can directly sink current to pull the gate to source potential for turn-on and float or drive high-impedance for turn-off.
Can SI8481DB-T1-E1 be used in a high-side switch configuration with 3.3 V logic control?
Yes - SI8481DB-T1-E1 is fully compatible with 3.3 V logic control in high-side configurations. At VGS = -3.3 V, its RDS(on) remains ≤ 0.025 Ω (max), delivering <85 mV dropout at 3.5 A. No level shifter is needed, simplifying circuit design and reducing component count.
What is the thermal resistance junction-to-ambient for SI8481DB-T1-E1 on minimum-copper PCB?
On a 1" × 1" FR4 board with minimum copper, the SI8481DB-T1-E1 has a maximum RthJA of 175 °C/W. This value defines worst-case thermal performance and should be used for conservative thermal design when copper pour is limited - such as in dense multilayer boards with internal ground planes only.
Is SI8481DB-T1-E1 suitable for reverse polarity protection in 5 V systems?
Yes - SI8481DB-T1-E1 is commonly deployed for reverse polarity protection in 5 V systems. With VDS = -20 V and RDS(on) = 0.021 Ω, it introduces <105 mV drop at 5 A and blocks reverse current via its intrinsic body diode orientation. Its low threshold ensures robust turn-on even with marginal input voltage.
SI8481DB-T1-E1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET® Gen III
- Package/Case:
- 4-UFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 9.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 21mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id:
- 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 47 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2500 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.8W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 4-MICRO FOOT® (1.6x1.6)
SI8481DB-T1-E1 FAQ
1.How can I place an order for SI8481DB-T1-E1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI8481DB-T1-E1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI8481DB-T1-E1 reliable?
The price and inventory of SI8481DB-T1-E1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8481DB-T1-E1 is usually 5 days.
3.What payment methods are accepted for SI8481DB-T1-E1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8481DB-T1-E1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI8481DB-T1-E1?
SI8481DB-T1-E1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI8481DB-T1-E1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI8481DB-T1-E1?
For technical support, including SI8481DB-T1-E1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8481DB-T1-E1 requirements.
6.How does Aetrix verify that SI8481DB-T1-E1 is sourced from the original manufacturer or authorized distributors?
All SI8481DB-T1-E1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8481DB-T1-E1 meets industry standards.
7.What is the process for return or replacement of SI8481DB-T1-E1?
All SI8481DB-T1-E1 units undergo pre-shipment inspection (PSI). If there is an issue with SI8481DB-T1-E1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI8481DB-T1-E1 part is unused and in its original packaging.
Return procedure for SI8481DB-T1-E1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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