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Vishay Siliconix SI8497DB-T2-E1
- Part No.:
- SI8497DB-T2-E1
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 6-UFBGA
- Datasheet:
-
SI8497DB-T2-E1.pdf
- Description:
- MOSFET P-CH 30V 13A 6MICROFOOT
- Quantity:
- Payment:
- Shipping:
Inventory:3,091
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Product details
Overview
SI8497DB-T2-E1 from Vishay Siliconix is a P-channel enhancement-mode MOSFET optimized for low-voltage load switching in space-constrained portable electronics, featuring -30 V VDS, 0.053 Ω RDS(on) at VGS = -4.5 V, -13 A continuous drain current (TC = 25 °C), and Micro Foot® 1.5 mm × 1 mm package with 0.5 mm pitch.
For engineers reviewing the SI8497DB-T2-E1 datasheet, SI8497DB-T2-E1 pinout, SI8497DB-T2-E1 application, or SI8497DB-T2-E1 equivalent, this device is selected for ultra-thin battery protection switches, USB port OVP circuits, and high-density PMIC output stages where PCB area < 1.5 mm² and height < 0.59 mm are mandatory.
Technical Context
This MOSFET uses TrenchFET® technology to achieve low gate charge (16.3 nC at VGS = -4.5 V) and fast switching (td(off) = 60–120 ns), enabling efficient operation in DC-DC converter synchronous rectification and battery disconnect paths. Its -1.1 V maximum VGS(th) ensures reliable turn-on with standard 3.3 V or 2.5 V logic-level gate drivers.
The device integrates a body diode with VSD = -0.73 V (typ.) at IS = -1.5 A and trr = 21 ns, supporting bidirectional current flow in charger IC reverse-current protection and load-sharing configurations without external diodes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Supports full discharge of two-cell Li-ion batteries (up to 8.4 V) with 3.5× voltage margin for transient spikes. |
| RDS(on) max | 0.053 Ω at VGS = -4.5 V - Delivers ≤ 120 mW conduction loss at 1.5 A, critical for thermal management in sealed handheld enclosures. |
| ID continuous | -13 A at TC = 25 °C - Enables single-device handling of peak load currents in power banks and tablet charging circuits. |
| Qg typ | 16.3 nC at VGS = -4.5 V - Reduces gate drive power and enables use with low-current GPIOs in battery-powered microcontrollers. |
| Package | Micro Foot® 1.5 mm × 1 mm - Fits within 1.5 mm² PCB footprint, allowing placement under narrow connectors or near edge-mounted USB ports. |
| RthJA max | 45 °C/W - Requires minimal copper pour (≥ 100 mm²) for 1.5 A continuous operation at ambient ≤ 55 °C without forced airflow. |
| VGS(th) | -0.5 to -1.1 V - Ensures guaranteed turn-on with 2.5 V logic outputs, eliminating need for level-shifting circuitry in low-power SoC designs. |
Pinout & Package
SI8497DB-T2-E1 uses a 6-bump Micro Foot® package (1.5 mm × 1 mm, 0.5 mm pitch) with solder bumps arranged in a 2×3 array. The package has no leads; electrical connection is made via bottom-side bumps. Pin 1 is marked by a laser dot on the die backside.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control input requiring ≤ ±100 nA leakage; connects directly to MCU GPIO or dedicated gate driver output. |
| 2, 3, 4, 6 (S) | Source | Four parallel source terminals reduce bond wire inductance and improve current sharing; tied to system ground or battery negative. |
| 5 (D) | Drain | Main power path terminal; connects to battery anode or load input; requires thermal pad connection to PCB ground plane for heat dissipation. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables 0.053 Ω RDS(on) in 1.5 mm × 1 mm footprint, reducing conduction loss by 35% vs. comparable SOT-23 P-MOSFETs. |
| Ultra-thin 0.59 mm max height | Permits integration into < 1 mm-thick devices such as smartwatches and wireless earbuds without mechanical interference. |
| Lead (Pb)-free and halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile, supporting lead-free assembly in high-volume manufacturing. |
| Low Qgd/Qg ratio (0.3) | Minimizes Miller effect during switching, improving stability in high-frequency load switch applications (>1 MHz). |
| Body diode trr = 21 ns | Reduces reverse-recovery losses in bidirectional power paths, extending battery life in USB-C dual-role port implementations. |
Applications
| Battery Protection Switch | USB Port Overvoltage Protection |
|---|---|
|
Use Scenario: Isolating Li-ion battery from system during overvoltage fault or deep discharge. IC Role / Device Role / Timing Role: High-side P-channel switch controlled by battery management IC to break main power path within 100 μs. Use Value: 0.053 Ω RDS(on) limits voltage drop to < 80 mV at 1.5 A, preserving battery cutoff accuracy and preventing false shutdowns. |
Use Scenario: Blocking > 5.5 V transients on USB VBUS line before reaching downstream USB controller. IC Role / Device Role / Timing Role: Reverse-polarity protected OVP switch placed between USB connector and PMIC input. Use Value: -30 V VDS rating withstands 12 V ESD events per IEC 61000-4-2 Level 4 without clamping diode overhead. |
| Charger IC Reverse-Current Block | PMIC Output Load Switch |
|
Use Scenario: Preventing battery discharge back into USB host when no external power is present. IC Role / Device Role / Timing Role: Low-side configured P-MOSFET in series with charger IC output to enforce unidirectional current flow. Use Value: Body diode VSD = -0.73 V enables passive blocking without gate control, reducing BOM count in cost-sensitive wearables. |
Use Scenario: Enabling/disabling power rail to RF module or sensor subsystem in sleep/wake cycles. IC Role / Device Role / Timing Role: Load switch driven by PMIC's enable signal to sequence power delivery with < 10 μs response time. Use Value: 16.3 nC Qg allows full turn-on with 1 mA gate drive, compatible with integrated PMIC GPIOs without external buffer. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8495DB-T2-E1 | RDS(on) = 0.071 Ω at VGS = -2.5 V; same package and pinout | Higher threshold sensitivity enables direct interface with 1.8 V logic, but higher conduction loss at 3.3 V systems | Select when gate drive voltage is ≤ 2.5 V and lower VGS(th) tolerance is required. |
| DMN3026LSD-13 | SO-8 package (4.9 mm × 6 mm); RDS(on) = 0.028 Ω at VGS = -4.5 V; higher ID = -20 A | Requires PCB redesign due to larger footprint and different thermal path; suited for industrial-grade power rails | Choose for higher current capacity (>13 A) and legacy SO-8 layout compatibility, not for space-constrained designs. |
Compared with Si8495DB-T2-E1, SI8497DB-T2-E1 delivers lower RDS(on) at 3.3 V gate drive and better thermal performance in ultra-dense layouts; versus DMN3026LSD-13, it trades current rating for 95% smaller footprint and 70% lower profile-critical for consumer wearables.
Availability
SI8497DB-T2-E1 is available at Aetrix Electronics and suitable for battery protection, USB OVP, and PMIC load switching applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for SI8497DB-T2-E1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-efficiency, miniaturized solutions for portable and automotive markets.
The Si8497DB belongs to Vishay's Micro Foot® TrenchFET® P-channel MOSFET product line, engineered specifically for ultra-compact battery-powered devices where board space and thermal envelope are primary constraints.
FAQ
What is the maximum junction temperature rating for SI8497DB-T2-E1?
The SI8497DB-T2-E1 has an operating junction temperature range of -55 °C to +150 °C. This 150 °C maximum allows sustained operation in thermally demanding environments such as enclosed power banks or wearable devices with limited airflow, provided PCB thermal design maintains RthJA ≤ 45 °C/W under worst-case ambient conditions. The SI8497DB-T2-E1 datasheet specifies derating curves for continuous current versus case temperature.
Does SI8497DB-T2-E1 require a gate resistor for stable switching?
SI8497DB-T2-E1 does not require a gate resistor for basic on/off operation, but a 1 Ω to 10 Ω series gate resistor is recommended to dampen ringing caused by parasitic inductance in high-speed switching applications. The SI8497DB-T2-E1 exhibits low gate resistance (8 Ω typical) and fast switching times (td(off) = 60–120 ns), making external gate control essential for EMI-sensitive designs like Bluetooth headsets or medical sensors.
Can SI8497DB-T2-E1 be used in a high-side configuration with 3.3 V logic control?
Yes, SI8497DB-T2-E1 supports high-side switching with 3.3 V logic control because its VGS(th) range (-0.5 V to -1.1 V) ensures full enhancement at VGS = -3.3 V. In high-side configuration, the SI8497DB-T2-E1 source connects to the positive rail and gate is pulled down to ground, delivering 0.053 Ω RDS(on) with negligible voltage drop-ideal for battery disconnect circuits in smartphones and tablets.
What is the thermal resistance from junction to case (RthJC) for SI8497DB-T2-E1?
The SI8497DB-T2-E1 has a maximum junction-to-case (drain) thermal resistance of 9.5 °C/W under steady-state conditions. This value is measured from the silicon junction to the drain bump surface, enabling accurate thermal modeling when the SI8497DB-T2-E1 drain is soldered directly to a large PCB copper pour or thermal pad. It supports power dissipation up to 13 W at TC = 25 °C without heatsink.
Is SI8497DB-T2-E1 suitable for automotive applications?
SI8497DB-T2-E1 is not AEC-Q200 qualified and is intended for commercial portable electronics-not automotive applications. While its -55 °C to +150 °C operating range meets some automotive temperature requirements, the SI8497DB-T2-E1 lacks the extended reliability testing, failure rate reporting, and PPAP documentation mandated for automotive use. For automotive-grade alternatives, consult Vishay's AEC-Q101-qualified TrenchFET® portfolio.
SI8497DB-T2-E1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 6-UFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 53mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 49 nC @ 10 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1320 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.77W (Ta), 13W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-microfoot
SI8497DB-T2-E1 FAQ
1.How can I place an order for SI8497DB-T2-E1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI8497DB-T2-E1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI8497DB-T2-E1 reliable?
The price and inventory of SI8497DB-T2-E1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8497DB-T2-E1 is usually 5 days.
3.What payment methods are accepted for SI8497DB-T2-E1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8497DB-T2-E1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI8497DB-T2-E1?
SI8497DB-T2-E1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI8497DB-T2-E1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI8497DB-T2-E1?
For technical support, including SI8497DB-T2-E1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8497DB-T2-E1 requirements.
6.How does Aetrix verify that SI8497DB-T2-E1 is sourced from the original manufacturer or authorized distributors?
All SI8497DB-T2-E1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8497DB-T2-E1 meets industry standards.
7.What is the process for return or replacement of SI8497DB-T2-E1?
All SI8497DB-T2-E1 units undergo pre-shipment inspection (PSI). If there is an issue with SI8497DB-T2-E1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI8497DB-T2-E1 part is unused and in its original packaging.
Return procedure for SI8497DB-T2-E1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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