Vishay Siliconix SI8805EDB-T2-E1

Overview

SI8805EDB-T2-E1 from Vishay Siliconix is a P-channel TrenchFET® power MOSFET in a 0.8 mm × 0.8 mm MICRO FOOT® package, rated for -8 V V_DS, 0.056 Ω R_DS(on) at V_GS = -4.5 V, and -3.1 A continuous drain current at T_A = 25 °C. It serves as a compact, low-voltage load switch in space-constrained portable electronics.

For engineers reviewing the SI8805EDB-T2-E1 datasheet, SI8805EDB-T2-E1 pinout, SI8805EDB-T2-E1 application, or SI8805EDB-T2-E1 equivalent, key selection criteria include ultra-thin 0.357 mm height, 1500 V HBM ESD rating, gate threshold voltage range of -0.35 V to -0.7 V, and thermal resistance up to 135 °C/W (full-copper board).

Technical Context

This P-channel MOSFET employs trench-gate silicon technology optimized for low R_DS(on) at gate drive voltages as low as -1.2 V, enabling efficient switching on 1.2 V and 1.8 V power rails. Its 4-bump flip-chip construction eliminates bond wires and reduces parasitic inductance.

The device features an integrated body diode with reverse recovery time of 35 ns (typ.) and Q_rr of 15 nC (typ.), supporting fast turn-off in synchronous or diode-OR configurations. Absolute maximum V_GS is ±5 V, limiting compatibility with higher-voltage logic interfaces without level shifting.

Key Specifications

Pinout & Package

MICRO FOOT® 0.8 mm × 0.8 mm, 4-bump flip-chip package with solder bumps on the backside die surface. Bump composition: 95.5% Sn / 3.8% Ag / 0.7% Cu. Pin 1 identified by laser mark on die backside.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Compared with SI8805EDB-T2-E1, Si8804EDB-T2-E1 offers lower on-resistance in identical form factor but sacrifices 0.6 A current capacity, while AO3401A trades significant size and height penalty for broader distributor availability and legacy design compatibility.

Availability

SI8805EDB-T2-E1 is available at Aetrix Electronics and suitable for smartphone power management, tablet PC load switching, and wireless earbud charging case designs requiring stable component supply and lead-free compliance.

Supply support for SI8805EDB-T2-E1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and miniaturization.

The SI8805EDB-T2-E1 belongs to Vishay's MICRO FOOT® TrenchFET® family, engineered specifically for ultra-compact, low-voltage load switching in portable consumer electronics.

FAQ

What is the maximum gate-source voltage rating for SI8805EDB-T2-E1?

The SI8805EDB-T2-E1 has a maximum gate-source voltage (V_GS) rating of ±5 V, as specified in its Absolute Maximum Ratings table. Exceeding this limit risks permanent gate oxide damage. This rating constrains direct interface with 5 V logic without level translation, making it best suited for 1.2 V–4.5 V control signals. The SI8805EDB-T2-E1 must be driven within this window to ensure long-term reliability and consistent R_DS(on) performance.

Can SI8805EDB-T2-E1 be used as a high-side switch in a 1.2 V system?

Yes, SI8805EDB-T2-E1 is explicitly characterized for 1.2 V gate drive: its R_DS(on) is 0.290 Ω at V_GS = -1.2 V and I_D = -0.3 A. This enables functional high-side switching in 1.2 V domains without external level shifters. However, designers must verify that the controller's low-state voltage remains ≤ -1.2 V under load, and that the resulting 87 mW conduction loss (at 0.3 A) meets thermal targets. The SI8805EDB-T2-E1's low V_GS(th) range (-0.35 V to -0.7 V) supports robust turn-on margin in such applications.

What is the thermal resistance junction-to-ambient for SI8805EDB-T2-E1 on a standard PCB?

The SI8805EDB-T2-E1 has a typical junction-to-ambient thermal resistance (R_thJA) of 105 °C/W when mounted on a 1" × 1" FR4 board with full copper, and 200 °C/W on the same board with minimum copper. These values assume t ≤ 5 s pulse conditions. For continuous operation, derating curves show usable power dissipation drops from 0.9 W at 25 °C ambient to 0.3 W at 70 °C ambient (minimum copper). Accurate thermal modeling of the SI8805EDB-T2-E1 requires using these board-specific R_thJA values-not generic package numbers.

Does SI8805EDB-T2-E1 include ESD protection, and what level is certified?

Yes, SI8805EDB-T2-E1 features built-in ESD protection rated at 1500 V HBM (Human Body Model), as stated in its Features section. This level is verified per JEDEC JS-001 and qualifies the device for handling in standard electronics assembly environments without additional input protection. The ESD robustness stems from internal gate protection structures and is independent of external capacitors or TVS diodes. For systems exposed to higher discharge events, supplemental protection remains advisable-but the SI8805EDB-T2-E1 itself provides baseline immunity sufficient for most portable product workflows.

How does the body diode performance of SI8805EDB-T2-E1 impact its use in reverse-current blocking?

The SI8805EDB-T2-E1 body diode exhibits V_SD = -0.8 V to -1.2 V at I_S = -1.5 A and t_rr = 35 ns (typ.), enabling effective reverse-current blocking with low forward loss and fast recovery. In diode-OR or back-to-back configurations, this minimizes voltage drop during fault conditions and reduces switching losses during transient events. However, designers must account for Q_rr = 15 nC (typ.) in timing calculations, as uncontrolled reverse recovery can induce voltage spikes. The SI8805EDB-T2-E1's diode parameters are fully characterized and usable for precise power-path analysis without estimation.