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Vishay Siliconix SI8809EDB-T2-E1
- Part No.:
- SI8809EDB-T2-E1
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 4-XFBGA
- Datasheet:
-
SI8809EDB-T2-E1.pdf
- Description:
- MOSFET P-CH 20V 1.9A MICROFOOT
- Quantity:
- Payment:
- Shipping:
Inventory:4,764
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Product details
Overview
SI8809EDB-T2-E1 from Vishay Siliconix is a P-channel enhancement-mode MOSFET designed for ultra-compact load and battery switching in portable electronics. It features -20 V VDS, 0.090 Ω RDS(on) at VGS = -4.5 V, -2.6 A continuous drain current (TA = 25 °C), 6 nC total gate charge, and Micro Foot® 0.8 mm × 0.8 mm package with 0.357 mm height.
For engineers reviewing the SI8809EDB-T2-E1 datasheet, SI8809EDB-T2-E1 pinout, SI8809EDB-T2-E1 application, or SI8809EDB-T2-E1 equivalent, this device is selected for space-constrained, low-voltage DC power path control where high-speed switching, low on-resistance, and robust ESD protection (1000 V HBM) are critical design requirements.
Technical Context
This MOSFET employs TrenchFET® technology to achieve low RDS(on) and fast switching performance in a chip-scale package. Its gate threshold voltage of -0.4 V to -0.9 V enables reliable turn-on with low-voltage logic-level drive (e.g., 1.8 V or 2.5 V GPIO), while its body diode forward voltage of -0.8 V to -1.2 V supports bidirectional current handling in battery protection circuits.
The device operates over -55 °C to +150 °C junction temperature range and is rated for ±8 V gate-source voltage. Thermal resistance is 105 °C/W (typical, full copper board) and 200 °C/W (typical, minimum copper), defining practical power dissipation limits in real PCB layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum reverse-blocking capability for battery-side switching in 3.3 V or lower systems |
| RDS(on) | 0.090 Ω at VGS = -4.5 V - Enables <100 mW conduction loss at 1.5 A load current |
| ID (cont) | -2.6 A at TA = 25 °C - Supports typical smartphone/tablet load switch applications up to ~2.5 A |
| Qg | 6 nC at VGS = -4.5 V - Low gate drive energy reduces controller loading and switching losses |
| VGS(th) | -0.4 V to -0.9 V - Ensures turn-on with standard 1.8 V or 2.5 V I/O without level-shifting |
| ESD HBM | 1000 V - Provides robust handling margin during automated assembly and end-user operation |
| Package | Micro Foot® 0.8 mm × 0.8 mm - Fits within 0.64 mm² footprint, ideal for <1.0 mm board thickness constraints |
Pinout & Package
SI8809EDB-T2-E1 uses a 4-bump Micro Foot® package (0.4 mm pitch) with bottom-side terminations. The package is lead (Pb)-free and halogen-free, compliant with RoHS and Vishay's material categorization standards.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control input; accepts logic-level negative voltage to turn on P-channel device |
| 2 (S) | Source | Connected to higher potential rail (e.g., battery anode); serves as reference for gate drive |
| 3 (S) | Source | Second source bump - paralleled with Pin 2 to reduce source inductance and improve current sharing |
| 4 (D) | Drain | Switched output node; connects to load; body diode cathode faces drain side |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Delivers industry-leading RDS(on) × area efficiency for P-channel devices in sub-1 mm² footprint |
| Ultra-thin 0.357 mm profile | Enables use in ultra-slim handhelds and wearables where Z-height is constrained by battery or display stackup |
| High-speed switching | Turn-on delay <30 ns and fall time <20 ns (VGEN = -8 V) support >1 MHz PWM load control |
| Body diode with trr = 20–40 ns | Minimizes reverse recovery losses in synchronous rectification or back-to-back switch configurations |
| 1000 V HBM ESD rating | Eliminates need for external ESD protection in most portable end-equipment designs |
Applications
| Battery Protection Circuit | Smartphone Load Switch |
|---|---|
Use Scenario: Bidirectional current blocking between battery and system rails during fault conditions or shutdown. IC Role / Device Role / Timing Role: P-channel MOSFET used in back-to-back configuration to prevent reverse current flow and enable safe hot-swap disconnect. Use Value: Low RDS(on) minimizes voltage drop across battery terminals; compact size allows placement near battery connector. | Use Scenario: Controlled power-up/down sequencing of PMIC rails or peripheral modules in mobile SoC platforms. IC Role / Device Role / Timing Role: High-side load switch enabling precise timing-controlled power gating via GPIO. Use Value: Fast turn-off (<20 ns fall time) ensures clean rail collapse; 1.8 V compatible VGS(th) eliminates level shifter requirement. |
| Tablet PC Power Management | Wireless Earbud Charging Case |
Use Scenario: Isolating auxiliary subsystems (e.g., camera, audio codec) to reduce standby leakage current. IC Role / Device Role / Timing Role: Low-quiescent-current load switch controlled by application processor GPIO. Use Value: 1 μA max gate leakage at ±4.5 V ensures minimal control-line loading; 0.8 mm × 0.8 mm footprint saves PCB area in dense tablet layouts. | Use Scenario: Managing power delivery from Li-ion cell to charging IC and Bluetooth SoC in compact earbud cases. IC Role / Device Role / Timing Role: Battery-side switch enabling firmware-controlled battery isolation during firmware updates or safety lockout. Use Value: 0.357 mm height fits within tight 3–4 mm case height envelope; -20 V rating accommodates fully charged 4.4 V cells with margin. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8807EDB-T2-E1 | Same package, but -12 V VDS, 0.045 Ω RDS(on) at -4.5 V, -3.5 A ID | Better suited for 1.8 V/3.3 V systems with tighter voltage margins; not rated for 4.4 V battery rails | Select when VDS margin is less critical than RDS(on) and higher current is needed. |
| DMN2020LFG-7 | 0.9 mm × 0.6 mm package, -20 V VDS, 0.105 Ω RDS(on) at -4.5 V, -2.0 A ID | Slightly larger footprint, lower current rating, and no specified HBM rating | Consider if alternate package geometry eases layout routing or thermal relief constraints. |
Compared with SI8809EDB-T2-E1, Si8807EDB-T2-E1 offers lower on-resistance but reduced voltage headroom, while DMN2020LFG-7 trades slightly higher RDS(on) and unverified ESD robustness for a non-square package shape that may simplify trace fanout in dense layouts.
Availability
SI8809EDB-T2-E1 is available at Aetrix Electronics and suitable for smartphone load switching, tablet power management, wireless earbud charging case design, and portable medical monitor battery isolation requiring stable component supply and long-term manufacturability.
Supply support for SI8809EDB-T2-E1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency, miniaturization, and reliability.
The Si88xxDB series targets ultra-compact, low-voltage DC power path control in consumer portables, delivering optimized P-channel performance in Micro Foot® packages for battery-switching and load-gating applications.
FAQ
What is the maximum continuous drain current for SI8809EDB-T2-E1 at 70 °C ambient temperature?
The SI8809EDB-T2-E1 supports -2.1 A continuous drain current at TA = 70 °C with full copper PCB (derated from -2.6 A at 25 °C). This value assumes surface mounting on a 1" × 1" FR4 board with full copper, per Vishay's S15-0346-Rev. C test condition (note a). At minimum copper, the rating drops to -1.5 A under the same ambient condition.
Does SI8809EDB-T2-E1 require a gate driver for GPIO control from a 1.8 V microcontroller?
No, SI8809EDB-T2-E1 does not require a gate driver when driven by a 1.8 V GPIO. Its gate threshold voltage range (-0.4 V to -0.9 V) ensures full enhancement with logic-low outputs down to 1.8 V, and its RDS(on) remains 0.155 Ω at VGS = -1.8 V, making it suitable for direct microcontroller interface in battery-powered systems.
What is the thermal resistance junction-to-ambient for SI8809EDB-T2-E1 on a standard PCB?
The typical junction-to-ambient thermal resistance (RthJA) for SI8809EDB-T2-E1 is 105 °C/W when mounted on a 1" × 1" FR4 board with full copper (t ≤ 5 s), and 200 °C/W with minimum copper. These values define the steady-state power dissipation limit - for example, 0.9 W max at TA = 25 °C with full copper - and are critical for thermal design validation.
Can SI8809EDB-T2-E1 be used in a back-to-back configuration for reverse polarity protection?
Yes, SI8809EDB-T2-E1 is commonly used in back-to-back P-channel configuration for reverse polarity and reverse current protection. Its matched source/drain characteristics, low RDS(on), and integrated body diode (VSD = -0.8 V to -1.2 V) allow symmetrical blocking in both directions when paired with a second identical device, eliminating the need for external Schottky diodes.
Is SI8809EDB-T2-E1 suitable for automotive applications?
No, SI8809EDB-T2-E1 is not qualified for automotive applications. Vishay documentation specifies no AEC-Q200 qualification, and its operating temperature range (-55 °C to +150 °C) meets industrial but not automotive grade requirements. For automotive load switching, designers should select Vishay's AEC-Q101-qualified alternatives such as the SQJQ412EP.
SI8809EDB-T2-E1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- 4-XFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.94 (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 90mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15 nC @ 8 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 500mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 4-Microfoot
SI8809EDB-T2-E1 FAQ
1.How can I place an order for SI8809EDB-T2-E1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI8809EDB-T2-E1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI8809EDB-T2-E1 reliable?
The price and inventory of SI8809EDB-T2-E1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8809EDB-T2-E1 is usually 5 days.
3.What payment methods are accepted for SI8809EDB-T2-E1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8809EDB-T2-E1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI8809EDB-T2-E1?
SI8809EDB-T2-E1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI8809EDB-T2-E1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI8809EDB-T2-E1?
For technical support, including SI8809EDB-T2-E1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8809EDB-T2-E1 requirements.
6.How does Aetrix verify that SI8809EDB-T2-E1 is sourced from the original manufacturer or authorized distributors?
All SI8809EDB-T2-E1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8809EDB-T2-E1 meets industry standards.
7.What is the process for return or replacement of SI8809EDB-T2-E1?
All SI8809EDB-T2-E1 units undergo pre-shipment inspection (PSI). If there is an issue with SI8809EDB-T2-E1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI8809EDB-T2-E1 part is unused and in its original packaging.
Return procedure for SI8809EDB-T2-E1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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