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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI8819EDB-T2-E1

Name: SI8819EDB-T2-E1
Brand: Vishay Siliconix
SKU: SI8819EDB-T2-E1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI8819EDB-T2-E1

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 4-XFBGA

Datasheet:: SI8819EDB-T2-E1.pdf

Description:: MOSFET P-CH 12V 2.9A 4MICRO FOOT

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Product details

Overview

SI8819EDB-T2-E1 from Vishay Siliconix is a P-channel TrenchFET® MOSFET optimized for low-voltage load switching in space-constrained portable electronics, featuring -12 V V_DS, 0.080 Ω R_DS(on) at -3.7 V V_GS, -2.9 A continuous drain current, and MICRO FOOT® 0.8 mm × 0.8 mm package with 0.4 mm max profile - deployed in battery protection circuits of smartphones and tablet PCs.

For engineers reviewing the SI8819EDB-T2-E1 datasheet, SI8819EDB-T2-E1 pinout, SI8819EDB-T2-E1 application, or SI8819EDB-T2-E1 equivalent, key selection criteria include gate threshold voltage (-0.4 to -0.9 V), ESD robustness (1700 V HBM), thermal resistance (105–135 °C/W), body diode recovery (47 ns t_rr), and compatibility with 1.5–3.7 V logic-level drive in high-speed switching topologies.

Technical Context

This P-channel MOSFET operates as a high-side load switch with depletion-mode gate control logic: turn-on occurs at negative gate-source bias, enabling direct interface with standard GPIOs without level-shifting. Its trench-based silicon structure delivers low Q_g (7 nC typ. at -4.5 V) and fast switching (t_d(on) = 17 ns, t_f = 30 ns) under 1 Ω gate drive.

The device integrates a monolithic source-drain body diode with V_SD = -0.82 V at -1.5 A and Q_rr = 26 nC, supporting synchronous rectification and reverse-current blocking in bidirectional power paths. Thermal design relies on its ultra-thin MICRO FOOT® package, where junction-to-ambient resistance varies from 105 °C/W (full-copper PCB) to 260 °C/W (minimum-copper layout).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-12 V - Maximum drain-source blocking voltage; defines safe operating range in 3.3 V/5 V rail switching.
R_DS(on) max @ V_GS = -3.7 V	0.080 Ω - On-resistance at logic-compatible gate drive; enables <100 mW conduction loss at 1.5 A.
I_D continuous @ T_A = 25 °C	-2.9 A - Steady-state current capability on standard FR4; derates to -2.3 A at 70 °C ambient.
Q_g typ.	7 nC - Total gate charge at -4.5 V drive; determines gate driver current requirement and switching speed.
t_rr (body diode)	47 ns - Reverse recovery time; critical for minimizing shoot-through and power loss in bidirectional DC-DC stages.
R_thJA (typ.)	105 °C/W - Junction-to-ambient thermal resistance on full-copper board; sets maximum power dissipation limit (0.9 W).
ESD HBM	1700 V - Human-body-model robustness; ensures reliability during board assembly and handling without extra protection.

Pinout & Package

MICRO FOOT® 0.8 mm × 0.8 mm, 4-bump land-grid array (LGA) package with 0.4 mm pitch; solder bumps composed of 95.5% Sn / 3.8% Ag / 0.7% Cu; backside laser-marked with "AK" date/lot code; no leads - requires reflow-only assembly per J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts -1.5 V to -3.7 V logic-level drive for full enhancement; ±8 V absolute max rating.
2 (S)	Source	Reference node for gate drive; connected to higher-potential rail in high-side switch configuration.
3 (S)	Source (redundant)	Dual-source bump improves current sharing and reduces parasitic inductance in high-di/dt applications.
4 (D)	Drain	Switched output node; connects to load; body diode anode tied internally to source (S).

Key Features

Feature	Design Value
TrenchFET® architecture	Enables ultra-low R_DS(on) and high cell density in 0.8 mm² footprint - critical for mobile PCB area reduction.
0.4 mm max profile	Allows stacking under thin bezels or beneath batteries; eliminates height conflicts in ultra-slim handheld enclosures.
Body diode with t_rr = 47 ns	Supports efficient reverse-current commutation in USB-C PD sink paths and battery-fuel-gauge isolation circuits.
V_GS(th) = -0.4 to -0.9 V	Ensures reliable turn-on with 1.8 V and 2.5 V I/O domains - eliminates need for external gate drivers in SoC-integrated designs.
1700 V HBM ESD rating	Permits direct integration into front-end power rails of consumer devices without discrete TVS or RC snubbers.

Applications

Smartphone Battery Protection	Tablet PC Load Switching
Use Scenario: Isolating main Li-ion battery from system during deep sleep or fault conditions to minimize standby leakage. IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as active disconnect switch controlled by PMIC enable signal. Use Value: Achieves <1 μA off-state current via tight V_GS(th) distribution and low I_DSS (-1 μA), extending shelf life and standby runtime.	Use Scenario: Enabling/disabling auxiliary power rails (e.g., display backlight, SSD interface) based on OS power states. IC Role / Device Role / Timing Role: Logic-level-controlled load switch with fast turn-off (<90 ns t_d(off)) to meet ACPI S3/S4 transition timing. Use Value: Low Q_g and R_DS(on) reduce dynamic losses during frequent rail cycling, improving overall system efficiency.
USB-C Power Delivery Sink	Mobile Computing Power Sequencing
Use Scenario: Blocking reverse current from VBUS to internal battery when external adapter is disconnected. IC Role / Device Role / Timing Role: Back-to-back configured P-MOSFET providing unidirectional conduction and reverse polarity protection. Use Value: Integrated body diode with 47 ns t_rr and low V_SD (-0.82 V) minimizes forward drop and recovery loss during hot-plug events.	Use Scenario: Controlling power-up sequence of multi-rail SoCs (e.g., core, I/O, memory) to prevent latch-up or inrush faults. IC Role / Device Role / Timing Role: Cascaded high-side switch enabling precise timing-controlled rail activation via GPIO or sequencer output. Use Value: 0.8 mm × 0.8 mm footprint allows placement adjacent to BGA packages; low thermal resistance supports burst-mode operation.

Smartphone Battery Protection

Tablet PC Load Switching

Use Scenario: Isolating main Li-ion battery from system during deep sleep or fault conditions to minimize standby leakage.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as active disconnect switch controlled by PMIC enable signal.

Use Value: Achieves <1 μA off-state current via tight V_GS(th) distribution and low I_DSS (-1 μA), extending shelf life and standby runtime.

Use Scenario: Enabling/disabling auxiliary power rails (e.g., display backlight, SSD interface) based on OS power states.

IC Role / Device Role / Timing Role: Logic-level-controlled load switch with fast turn-off (<90 ns t_d(off)) to meet ACPI S3/S4 transition timing.

Use Value: Low Q_g and R_DS(on) reduce dynamic losses during frequent rail cycling, improving overall system efficiency.

USB-C Power Delivery Sink

Mobile Computing Power Sequencing

Use Scenario: Blocking reverse current from VBUS to internal battery when external adapter is disconnected.

IC Role / Device Role / Timing Role: Back-to-back configured P-MOSFET providing unidirectional conduction and reverse polarity protection.

Use Value: Integrated body diode with 47 ns t_rr and low V_SD (-0.82 V) minimizes forward drop and recovery loss during hot-plug events.

Use Scenario: Controlling power-up sequence of multi-rail SoCs (e.g., core, I/O, memory) to prevent latch-up or inrush faults.

IC Role / Device Role / Timing Role: Cascaded high-side switch enabling precise timing-controlled rail activation via GPIO or sequencer output.

Use Value: 0.8 mm × 0.8 mm footprint allows placement adjacent to BGA packages; low thermal resistance supports burst-mode operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si8829EDB-T2-E1	Same MICRO FOOT® 0.8×0.8 package but rated for -20 V V_DS and higher R_DS(on) (0.125 Ω @ -4.5 V); slightly larger Q_g (9 nC).	Better suited for 12 V input systems or where higher breakdown margin is required; less optimal for 3.3 V logic drive due to higher V_GS(th).	Select Si8829EDB-T2-E1 only if system V_IN exceeds 12 V or long-term reliability under overvoltage stress is prioritized.
DMN2011UFG-7	0.95 mm × 0.95 mm DFN package; -20 V V_DS; R_DS(on) = 0.115 Ω @ -4.5 V; 1000 V HBM ESD rating.	Larger footprint and lower ESD robustness; requires more PCB area and additional ESD protection in handheld designs.	Choose DMN2011UFG-7 only when existing layout accommodates larger DFN or when -20 V rating is mandatory for industrial variant reuse.

Compared with Si8829EDB-T2-E1 and DMN2011UFG-7, the SI8819EDB-T2-E1 offers the smallest footprint, lowest R_DS(on) at 1.8–3.7 V drive, and highest HBM ESD rating - making it the preferred choice for next-generation compact mobile power switches where size, efficiency, and assembly yield are critical.

Availability

SI8819EDB-T2-E1 is available at Aetrix Electronics and suitable for smartphone battery protection, tablet PC load switching, USB-C power delivery sink circuits, and mobile computing power sequencing requiring stable component supply across high-volume production cycles.

Supply support for SI8819EDB-T2-E1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-efficiency, miniaturized, and ruggedized solutions for consumer, industrial, and automotive markets.

The SI8819EDB-T2-E1 belongs to Vishay's MICRO FOOT® TrenchFET® P-channel MOSFET family, engineered specifically for ultra-compact, high-speed load switching in battery-powered portable electronics where board space and thermal performance are tightly constrained.

FAQ

What is the maximum continuous drain current for SI8819EDB-T2-E1 at 70 °C ambient temperature?

The SI8819EDB-T2-E1 supports -2.3 A continuous drain current at T_A = 70 °C when mounted on a 1" × 1" FR4 board with full copper. This rating reflects thermal derating due to increased junction-to-ambient resistance at elevated ambient temperatures and must be validated against actual PCB layout and airflow conditions in the final design.

Does SI8819EDB-T2-E1 require a gate driver for 1.8 V microcontroller GPIO control?

No, the SI8819EDB-T2-E1 does not require an external gate driver when driven by a 1.8 V GPIO because its gate threshold voltage (V_GS(th)) ranges from -0.4 V to -0.9 V - ensuring full enhancement at -1.8 V V_GS. The SI8819EDB-T2-E1 achieves 0.190 Ω R_DS(on) at -1.8 V, sufficient for low-power load switching applications.

What is the body diode forward voltage of SI8819EDB-T2-E1 at -1.5 A?

The body diode forward voltage (V_SD) of the SI8819EDB-T2-E1 is -0.82 V (typical) at -1.5 A and V_GS = 0 V, measured at T_J = 25 °C. This low V_SD minimizes conduction loss during reverse-current flow, such as in USB-C sink path reverse-blocking configurations using the SI8819EDB-T2-E1.

Can SI8819EDB-T2-E1 be used in a back-to-back configuration for reverse polarity protection?

Yes, the SI8819EDB-T2-E1 is commonly used in back-to-back P-channel MOSFET configurations for reverse polarity and reverse-current protection. Its matched source/drain terminals, low R_DS(on), and integrated body diode with 47 ns t_rr make the SI8819EDB-T2-E1 well-suited for this topology in portable power inputs where space and efficiency are critical.

What is the thermal resistance junction-to-ambient for SI8819EDB-T2-E1 on minimum-copper PCB?

The maximum junction-to-ambient thermal resistance (R_thJA) for the SI8819EDB-T2-E1 on a 1" × 1" FR4 board with minimum copper is 260 °C/W (t = 5 s). This value informs worst-case thermal design - for example, at 0.5 W dissipation, junction temperature rise would be up to 130 °C above ambient, requiring careful layout or derating in thermally constrained environments.

SI8819EDB-T2-E1 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: 4-XFBGA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 2.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.5V, 3.7V

Rds On (Max) @ Id, Vgs:: 80mOhm @ 1.5A, 3.7V

Vgs(th) (Max) @ Id:: 900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 8 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 650 pF @ 6 V

FET Feature:: -

Power Dissipation (Max):: 900mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 4-MICRO FOOT® (0.8x0.8)

SI8819EDB-T2-E1 FAQ

1.How can I place an order for SI8819EDB-T2-E1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI8819EDB-T2-E1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI8819EDB-T2-E1 reliable?

The price and inventory of SI8819EDB-T2-E1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI8819EDB-T2-E1 is usually 5 days.

3.What payment methods are accepted for SI8819EDB-T2-E1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI8819EDB-T2-E1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI8819EDB-T2-E1?

SI8819EDB-T2-E1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI8819EDB-T2-E1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI8819EDB-T2-E1?

For technical support, including SI8819EDB-T2-E1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI8819EDB-T2-E1 requirements.

6.How does Aetrix verify that SI8819EDB-T2-E1 is sourced from the original manufacturer or authorized distributors?

All SI8819EDB-T2-E1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI8819EDB-T2-E1 meets industry standards.

7.What is the process for return or replacement of SI8819EDB-T2-E1?

All SI8819EDB-T2-E1 units undergo pre-shipment inspection (PSI). If there is an issue with SI8819EDB-T2-E1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI8819EDB-T2-E1 part is unused and in its original packaging.

Return procedure for SI8819EDB-T2-E1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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