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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI9424BDY-T1-E3

Name: SI9424BDY-T1-E3
Brand: Vishay Siliconix
SKU: SI9424BDY-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI9424BDY-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI9424BDY-T1-E3.pdf

Description:: MOSFET P-CH 20V 5.6A 8SO

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Product details

Overview

SI9424BDY-T1-E3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET rated for -20 V drain-source voltage, 0.025 Ω R_DS(on) at V_GS = -4.5 V, and -7.1 A continuous drain current at T_A = 25 °C. It operates in high-side load switch and reverse polarity protection circuits with low gate charge (24–40 nC) and fast switching (t_d(off) ≤ 200 ns).

For engineers reviewing the SI9424BDY-T1-E3 datasheet, SI9424BDY-T1-E3 pinout, SI9424BDY-T1-E3 application, or SI9424BDY-T1-E3 equivalent, key selection criteria include verified -20 V V_DS, guaranteed R_DS(on) ≤ 0.025 Ω at -4.5 V drive, SO-8 thermal performance (R_thJA ≤ 100 °C/W), and RoHS/halogen-free compliance per IEC 61249-2-21.

Technical Context

This device uses trench-gate silicon technology to achieve low on-resistance and fast switching in a surface-mount SO-8 package. Its negative threshold voltage (-0.45 to -0.85 V) enables direct logic-level gate drive from 3.3 V or 5 V controllers without level shifting.

The integrated body diode supports synchronous rectification and reverse-current blocking, with V_SD = -0.7 to -1.2 V at I_S = -2.3 A and zero gate bias. Thermal design is supported by documented R_thJF (30–40 °C/W) and transient impedance curves for pulsed power analysis.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - Maximum blocking voltage for high-side switches in 12 V automotive and industrial rails
R_DS(on)	0.025 Ω at V_GS = -4.5 V - Enables <175 mW conduction loss at 7.1 A, critical for thermally constrained PCBs
I_D (continuous)	-7.1 A at T_A = 25 °C - Supports robust load switching in space-limited DC/DC and battery management systems
Q_g	24–40 nC - Determines gate driver power requirement and switching speed in PWM-controlled applications
V_GS(th)	-0.45 to -0.85 V - Ensures turn-on with standard 3.3 V microcontroller GPIO, eliminating external level shifters
R_thJA	80–100 °C/W (steady state) - Defines maximum power dissipation before junction exceeds 150 °C on FR4 boards

Pinout & Package

SI9424BDY-T1-E3 is housed in a standard SO-8 surface-mount package with exposed drain pad for thermal enhancement. Pin numbering follows JEDEC MS-012AC, with pins 1–4 and 5–8 forming two parallel source/drain/gate groupings.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 6, 7, 8	Drain (D)	Internally connected to exposed thermal pad - must be soldered to large copper pour for R_thJF ≤ 40 °C/W
5	Gate (G)	Control terminal requiring <40 nC charge; sensitive to ESD (±9 V max rating)
Source (S)	Source (S)	Common reference for gate drive and load return; pins not explicitly numbered but electrically tied to leads 1–4 and 6–8 via internal bonding

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 0.025 Ω R_DS(on) in SO-8, enabling higher current density than planar P-channel alternatives
Logic-level gate drive	V_GS(th) ≤ -0.85 V ensures full enhancement with 3.3 V MCU outputs, reducing BOM count
RoHS and halogen-free	Complies with Directive 2002/95/EC and IEC 61249-2-21 - required for EU and automotive supply chains
Low Q_gd/Q_g ratio	5.8/40 ≈ 14.5 % - improves hard-switching efficiency and reduces Miller-induced shoot-through risk

Applications

Reverse Polarity Protection	High-Side Load Switch
Use Scenario: Protects downstream circuitry from damage when a 12 V battery is connected with reversed terminals. IC Role / Device Role / Timing Role: P-channel MOSFET configured as series pass element between input and system rail. Use Value: Blocks reverse current with <1 µA leakage (I_DSS) while delivering full load current with <175 mW conduction loss at 7.1 A.	Use Scenario: Enables/disables power to a subsystem (e.g., sensor array or communication module) under MCU control. IC Role / Device Role / Timing Role: High-side switch controlled by active-low GPIO signal driving the gate. Use Value: Achieves <100 ns turn-off delay and <105 ns fall time, supporting rapid power cycling without inrush current spikes.
Hot-Swap Controller Interface	OR-ing Diode Replacement
Use Scenario: Provides controlled inrush limiting during live insertion of a board into a backplane. IC Role / Device Role / Timing Role: Gate-driven by hot-swap controller's GATE output to regulate dV/dt during ramp-up. Use Value: Low R_DS(on) minimizes voltage drop across the FET, preserving rail margin while supporting >7 A steady-state current.	Use Scenario: Replaces Schottky diodes in redundant 12 V power supplies to reduce forward voltage drop and heat generation. IC Role / Device Role / Timing Role: Back-to-back configured with another P-FET to block reverse current while conducting forward current. Use Value: V_SD = -0.7 to -1.2 V at -2.3 A cuts conduction loss by >50 % versus 0.35 V Schottky, improving efficiency in dual-rail OR-ing.

Reverse Polarity Protection

High-Side Load Switch

Use Scenario: Protects downstream circuitry from damage when a 12 V battery is connected with reversed terminals.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as series pass element between input and system rail.

Use Value: Blocks reverse current with <1 µA leakage (I_DSS) while delivering full load current with <175 mW conduction loss at 7.1 A.

Use Scenario: Enables/disables power to a subsystem (e.g., sensor array or communication module) under MCU control.

IC Role / Device Role / Timing Role: High-side switch controlled by active-low GPIO signal driving the gate.

Use Value: Achieves <100 ns turn-off delay and <105 ns fall time, supporting rapid power cycling without inrush current spikes.

Hot-Swap Controller Interface

OR-ing Diode Replacement

Use Scenario: Provides controlled inrush limiting during live insertion of a board into a backplane.

IC Role / Device Role / Timing Role: Gate-driven by hot-swap controller's GATE output to regulate dV/dt during ramp-up.

Use Value: Low R_DS(on) minimizes voltage drop across the FET, preserving rail margin while supporting >7 A steady-state current.

Use Scenario: Replaces Schottky diodes in redundant 12 V power supplies to reduce forward voltage drop and heat generation.

IC Role / Device Role / Timing Role: Back-to-back configured with another P-FET to block reverse current while conducting forward current.

Use Value: V_SD = -0.7 to -1.2 V at -2.3 A cuts conduction loss by >50 % versus 0.35 V Schottky, improving efficiency in dual-rail OR-ing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7424PBF	R_DS(on) = 0.032 Ω @ -4.5 V; SO-8 but no exposed drain pad; R_thJA = 110 °C/W	Higher thermal resistance limits continuous current to ~5.5 A on same PCB area	Prefer SI9424BDY-T1-E3 where thermal headroom or lower conduction loss is critical
DMN2020LFG-7	R_DS(on) = 0.028 Ω @ -4.5 V; SOT-23-6 package; I_D = -4.2 A (T_A = 25 °C)	Smaller footprint but lower current rating and higher R_thJA (160 °C/W)	Choose SI9424BDY-T1-E3 for >5 A loads or when SO-8 mechanical stability is required

Compared with IRF7424PBF and DMN2020LFG-7, SI9424BDY-T1-E3 delivers the lowest R_DS(on) in SO-8 with documented thermal performance for high-current, thermally constrained designs - making it optimal for automotive body electronics and industrial PLC modules where reliability under sustained load is essential.

Availability

SI9424BDY-T1-E3 is available at Aetrix Electronics and suitable for reverse polarity protection, high-side load switching, and OR-ing diode replacement applications requiring stable component supply, lead-free compliance, and consistent SO-8 thermal behavior.

Supply support for SI9424BDY-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The Si9424BDY product line targets high-efficiency, logic-level P-channel switching in automotive, industrial, and computing power management - designed specifically for compact, thermally demanding DC/DC and battery-protection circuits.

FAQ

What is the maximum continuous drain current for SI9424BDY-T1-E3 at 70 °C ambient temperature?

The maximum continuous drain current for SI9424BDY-T1-E3 is -4.5 A at T_A = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SO-8 package on standard FR4 PCBs and must be applied in thermal design calculations alongside R_thJA = 80–100 °C/W.

Does SI9424BDY-T1-E3 require a gate resistor for safe operation?

SI9424BDY-T1-E3 does not mandate a gate resistor for basic on/off switching, but a 10–100 Ω series resistor is recommended to dampen ringing and limit peak gate current during fast transitions. The gate charge of 24–40 nC means even modest driver slew rates can induce oscillation without proper gate control.

Can SI9424BDY-T1-E3 be used in a synchronous buck converter high-side position?

No - SI9424BDY-T1-E3 is a P-channel MOSFET intended for high-side switching with referenced gate drive, not synchronous rectification. Its body diode recovery time (t_rr = 50–100 ns) and lack of optimized gate drive timing make it unsuitable as a synchronous rectifier; dedicated N-channel synchronous rectifiers or integrated controllers are required instead.

Is the exposed drain pad on SI9424BDY-T1-E3 electrically connected to the drain terminals?

Yes - the exposed drain pad on SI9424BDY-T1-E3 is internally bonded to all drain pins (1, 2, 3, 4, 6, 7, 8) and must be soldered to a thermal land on the PCB. This connection is essential to achieve the specified R_thJF of 30–40 °C/W and prevent thermal runaway under sustained load.

What is the gate threshold voltage range for SI9424BDY-T1-E3, and how does it affect 3.3 V logic compatibility?

The gate threshold voltage for SI9424BDY-T1-E3 is -0.45 to -0.85 V, measured at I_D = -250 µA. This ensures reliable turn-on with 3.3 V logic outputs (which pull gate to 0 V), since V_GS = -3.3 V exceeds the maximum |V_GS(th)| by >3× - guaranteeing strong enhancement without marginal conduction.

SI9424BDY-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 5.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 7.1A, 4.5V

Vgs(th) (Max) @ Id:: 850mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 4.5 V

Vgs (Max):: ±9V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.25W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI9424BDY-T1-E3 FAQ

1.How can I place an order for SI9424BDY-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI9424BDY-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI9424BDY-T1-E3 reliable?

The price and inventory of SI9424BDY-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI9424BDY-T1-E3 is usually 5 days.

3.What payment methods are accepted for SI9424BDY-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI9424BDY-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI9424BDY-T1-E3?

SI9424BDY-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI9424BDY-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI9424BDY-T1-E3?

For technical support, including SI9424BDY-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI9424BDY-T1-E3 requirements.

6.How does Aetrix verify that SI9424BDY-T1-E3 is sourced from the original manufacturer or authorized distributors?

All SI9424BDY-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI9424BDY-T1-E3 meets industry standards.

7.What is the process for return or replacement of SI9424BDY-T1-E3?

All SI9424BDY-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with SI9424BDY-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI9424BDY-T1-E3 part is unused and in its original packaging.

Return procedure for SI9424BDY-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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