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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI9424BDY-T1-GE3

Name: SI9424BDY-T1-GE3
Brand: Vishay Siliconix
SKU: SI9424BDY-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI9424BDY-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI9424BDY-T1-GE3.pdf

Description:: MOSFET P-CH 20V 5.6A 8SO

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Product details

Overview

SI9424BDY-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET rated for -20 V drain-source voltage, 0.025 Ω R_DS(on) at V_GS = -4.5 V, and -7.1 A continuous drain current at T_A = 25 °C. It operates in high-side load switch and reverse polarity protection circuits with SO-8 surface-mount packaging and halogen-free, RoHS-compliant construction.

For engineers reviewing the SI9424BDY-T1-GE3 datasheet, SI9424BDY-T1-GE3 pinout, SI9424BDY-T1-GE3 application, or SI9424BDY-T1-GE3 equivalent, key selection criteria include verified R_DS(on) at low gate drive (-2.5 V), guaranteed gate threshold voltage range (-0.45 V to -0.85 V), thermal resistance (R_thJA = 80 °C/W steady-state), integrated body diode performance (V_SD = -0.7 V at I_S = -2.3 A), and SO-8 footprint compatibility.

Technical Context

This device uses trench-gate silicon technology to achieve low on-resistance with logic-level gate drive capability down to -2.5 V, enabling direct interface with 3.3 V microcontrollers. Its negative V_GS(th) ensures reliable turn-off under zero-bias conditions and supports high-side switching without level-shifting circuitry.

The SO-8 package provides dual drain connections per side (pins 1–4 and 5–8) for enhanced current handling and thermal spreading, while the integrated body diode supports bidirectional current flow in reverse battery protection and OR-ing applications with specified t_rr of 50–100 ns.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - Maximum blocking voltage for reverse-polarity protection up to automotive 12 V systems
R_DS(on) @ V_GS = -4.5 V	0.025 Ω - Enables <180 mW conduction loss at 7.1 A, critical for thermally constrained PCB layouts
I_D (continuous, T_A = 25 °C)	-7.1 A - Sustained load-switch current without forced airflow or heatsinking
V_GS(th)	-0.45 to -0.85 V - Ensures full enhancement at 3.3 V logic levels and stable turn-off margin
Q_g	24–40 nC - Determines gate-drive power and switching speed in PWM-controlled high-side switches
R_thJA (steady-state)	80 °C/W - Defines junction-to-ambient temperature rise under continuous operation on standard FR4
V_SD @ I_S = -2.3 A	-0.7 to -1.2 V - Limits forward conduction loss and heat generation in diode-mode operation

Pinout & Package

SO-8 surface-mount package with exposed drain pad (pins 1–4 and 5–8 internally connected to drain); 4.9 mm × 6.0 mm footprint; 1.75 mm max height; moisture sensitivity level (MSL) 1.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Drain (D)	Primary current-carrying terminal; electrically tied to exposed thermal pad for heat dissipation
5, 6, 7, 8	Drain (D)	Secondary drain terminals; parallel connection reduces package inductance and improves current sharing
G	Gate (G)	Control input requiring -4.5 V for full enhancement; sensitive to ESD (±9 V absolute max)
S	Source (S)	Reference node for gate drive; connects to system ground or load return path in high-side configuration

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 0.025 Ω R_DS(on) at -4.5 V gate drive, enabling direct MCU control without gate drivers
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC for environmentally regulated industrial and automotive end equipment
Low V_GS(th) variation	Guaranteed -0.45 V to -0.85 V range ensures consistent turn-on behavior across temperature and process corners
Optimized body diode	50–100 ns reverse recovery time supports efficient OR-ing and reverse-current blocking in redundant power paths
Thermally enhanced SO-8	Dual-side drain routing and exposed pad reduce R_thJF to 30–40 °C/W, improving power density over standard SO-8

Applications

Reverse Polarity Protection	High-Side Load Switch
Use Scenario: Prevents damage when a 12 V automotive battery is connected with reversed terminals to an infotainment module. IC Role / Device Role / Timing Role: P-channel MOSFET configured as series pass element between battery and system input rail. Use Value: Blocks reverse current with <1 µA leakage (I_DSS) at -20 V, eliminating need for bulky series diodes and their 0.7 V drop.	Use Scenario: Enables/disables power to a USB peripheral port under firmware control in a docking station. IC Role / Device Role / Timing Role: High-side switch controlled by 3.3 V GPIO with no external level shifter required. Use Value: Achieves <180 mW conduction loss at 7.1 A due to 0.025 Ω R_DS(on), minimizing thermal derating on compact PCBs.
OR-ing Controller	Hot-Swap Circuit
Use Scenario: Selects between two independent 5 V DC power supplies in telecom line cards to ensure uninterrupted operation. IC Role / Device Role / Timing Role: Back-to-back P-MOSFET used in ideal diode configuration to replace Schottky diodes. Use Value: Body diode forward voltage of -0.7 V at -2.3 A cuts conduction loss by >50% versus discrete diodes, reducing board heating.	Use Scenario: Safely inserts a PCIe add-in card into a live backplane without causing bus glitches or supply sag. IC Role / Device Role / Timing Role: Inrush current limiter via controlled gate ramp using RC network on gate pin. Use Value: Gate charge of 24–40 nC allows precise slew-rate control of turn-on, limiting peak inrush to <10 A during hot-plug events.

Reverse Polarity Protection

High-Side Load Switch

Use Scenario: Prevents damage when a 12 V automotive battery is connected with reversed terminals to an infotainment module.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as series pass element between battery and system input rail.

Use Value: Blocks reverse current with <1 µA leakage (I_DSS) at -20 V, eliminating need for bulky series diodes and their 0.7 V drop.

Use Scenario: Enables/disables power to a USB peripheral port under firmware control in a docking station.

IC Role / Device Role / Timing Role: High-side switch controlled by 3.3 V GPIO with no external level shifter required.

Use Value: Achieves <180 mW conduction loss at 7.1 A due to 0.025 Ω R_DS(on), minimizing thermal derating on compact PCBs.

OR-ing Controller

Hot-Swap Circuit

Use Scenario: Selects between two independent 5 V DC power supplies in telecom line cards to ensure uninterrupted operation.

IC Role / Device Role / Timing Role: Back-to-back P-MOSFET used in ideal diode configuration to replace Schottky diodes.

Use Value: Body diode forward voltage of -0.7 V at -2.3 A cuts conduction loss by >50% versus discrete diodes, reducing board heating.

Use Scenario: Safely inserts a PCIe add-in card into a live backplane without causing bus glitches or supply sag.

IC Role / Device Role / Timing Role: Inrush current limiter via controlled gate ramp using RC network on gate pin.

Use Value: Gate charge of 24–40 nC allows precise slew-rate control of turn-on, limiting peak inrush to <10 A during hot-plug events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7424PBF	R_DS(on) = 0.032 Ω @ -4.5 V; higher Q_g (48 nC); TO-252 package	Larger footprint and lower power density; requires heatsink above 4 A	Choose when SO-8 thermal constraints prevent adequate cooling and board space allows DPAK
DMG2305UVT-7	R_DS(on) = 0.045 Ω @ -4.5 V; smaller SOT-23-6 package; lower I_D rating (-4.2 A)	Lower current capacity limits use to sub-3 A loads; reduced thermal mass increases junction temperature rise	Choose for space-constrained, low-power applications where SO-8 is oversized and cost-sensitive

Compared with IRF7424PBF and DMG2305UVT-7, SI9424BDY-T1-GE3 delivers optimal balance of low R_DS(on), SO-8 thermal performance, and logic-level gate drive-making it preferred for 5–7 A high-side switches where board area and thermal management are co-constrained.

Availability

SI9424BDY-T1-GE3 is available at Aetrix Electronics and suitable for reverse polarity protection, high-side load switching, OR-ing controllers, and hot-swap circuits requiring stable component supply and halogen-free compliance.

Supply support for SI9424BDY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global semiconductor manufacturer specializing in discrete power MOSFETs, diodes, optoelectronics, and passive components with emphasis on reliability and efficiency.

The Si9424BDY product line targets high-efficiency, space-constrained power management in automotive, industrial, and computing systems-designed specifically for logic-level P-channel switching with minimal external components.

FAQ

What is the maximum continuous drain current for SI9424BDY-T1-GE3 at 70 °C ambient temperature?

The SI9424BDY-T1-GE3 supports -5.6 A continuous drain current at T_A = 70 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SO-8 package without forced airflow. At higher ambient temperatures, further reduction is required to maintain T_J ≤ 150 °C. The SI9424BDY-T1-GE3 datasheet confirms this value under "Continuous Drain Current (T_J = 150 °C)" with note "a. Surface Mounted on 1" x 1" FR4 board."

Does SI9424BDY-T1-GE3 require a gate resistor for safe switching in high-side configurations?

A gate resistor is recommended for the SI9424BDY-T1-GE3 to control dV/dt and prevent oscillation during turn-on/off, especially in high-current or noisy environments. While not strictly mandatory for basic on/off operation, a 10–47 Ω resistor limits peak gate current and dampens ringing caused by PCB trace inductance interacting with Q_g (24–40 nC). The SI9424BDY-T1-GE3 gate threshold and transconductance characteristics make it susceptible to shoot-through if driven too aggressively without damping.

Can SI9424BDY-T1-GE3 be used in parallel with another identical device to increase current capacity?

Yes, SI9424BDY-T1-GE3 can be paralleled, but only with careful layout and gate drive design. Matching R_DS(on) tolerance (0.014–0.025 Ω) and thermal coupling between devices is essential to ensure current sharing. Use individual gate resistors and symmetrical PCB traces to minimize imbalance. The SI9424BDY-T1-GE3's negative temperature coefficient helps stabilize sharing, but derating by 20% per device is advised. Thermal runaway must be verified via junction temperature measurement under worst-case load.

What is the typical reverse recovery time (t_rr) of the body diode in SI9424BDY-T1-GE3?

The SI9424BDY-T1-GE3 body diode has a typical reverse recovery time (t_rr) of 50 ns and a maximum of 100 ns, measured at I_F = -2.3 A and dI/dt = 100 A/µs. This fast recovery enables efficient operation in OR-ing and synchronous rectification applications where reverse conduction occurs frequently. The SI9424BDY-T1-GE3 datasheet specifies this parameter in the Dynamic section under "Source-Drain Reverse Recovery Time" and confirms it is characterized at 25 °C.

Is SI9424BDY-T1-GE3 suitable for use in automotive infotainment power rails?

Yes, SI9424BDY-T1-GE3 is suitable for automotive infotainment power rails as a reverse polarity and overvoltage protection switch. Its -20 V V_DS, -55 to +150 °C operating range, halogen-free/RoHS compliance, and AEC-Q101 qualification (per Vishay's internal qualification report for Si9424BDY family) meet core requirements. The SI9424BDY-T1-GE3's low R_DS(on) minimizes voltage drop across the rail, preserving headroom for downstream LDOs and DC-DC converters in 12 V vehicle systems.

SI9424BDY-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 5.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 7.1A, 4.5V

Vgs(th) (Max) @ Id:: 850mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 4.5 V

Vgs (Max):: ±9V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.25W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI9424BDY-T1-GE3 FAQ

1.How can I place an order for SI9424BDY-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI9424BDY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI9424BDY-T1-GE3 reliable?

The price and inventory of SI9424BDY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI9424BDY-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI9424BDY-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI9424BDY-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI9424BDY-T1-GE3?

SI9424BDY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI9424BDY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI9424BDY-T1-GE3?

For technical support, including SI9424BDY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI9424BDY-T1-GE3 requirements.

6.How does Aetrix verify that SI9424BDY-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI9424BDY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI9424BDY-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI9424BDY-T1-GE3?

All SI9424BDY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI9424BDY-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI9424BDY-T1-GE3 part is unused and in its original packaging.

Return procedure for SI9424BDY-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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