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Vishay Siliconix SI9433BDY-T1-GE3
- Part No.:
- SI9433BDY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI9433BDY-T1-GE3.pdf
- Description:
- MOSFET P-CH 20V 4.5A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:179
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Product details
Overview
SI9433BDY-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET designed for high-efficiency load switching in space-constrained DC-DC converters and power management circuits. It features -20 V drain-source voltage rating, 0.040 Ω RDS(on) at VGS = -4.5 V, and -6.2 A continuous drain current at TA = 25 °C - enabling compact, low-loss synchronous rectification in portable battery-powered systems.
For engineers reviewing the SI9433BDY-T1-GE3 datasheet, SI9433BDY-T1-GE3 pinout, SI9433BDY-T1-GE3 application, or SI9433BDY-T1-GE3 equivalent, key selection criteria include its halogen-free and RoHS-compliant SO-8 package, gate threshold voltage range (-0.6 V to -1.5 V), thermal resistance (RthJA = 80 °C/W steady-state), and verified diode recovery time (trr = 35–55 ns) for fast-switching topologies.
Technical Context
This device operates as a single P-channel MOSFET with no integrated driver or protection circuitry. Its gate threshold voltage (VGS(th)) is specified between -0.6 V and -1.5 V at ID = -250 µA, ensuring reliable turn-on with standard logic-level negative gate drive. The RDS(on) is characterized at both -4.5 V and -2.7 V gate bias, supporting operation in low-voltage control environments such as USB power delivery and battery protection IC interfaces.
Thermal performance is defined by junction-to-ambient (RthJA = 80 °C/W max, steady-state) and junction-to-foot (RthJF = 24 °C/W max) resistances, indicating suitability for PCB-mounted thermal relief via exposed drain pad. Dynamic parameters include total gate charge Qg = 8.8–14 nC and turn-off delay td(off) = 65–100 ns, confirming compatibility with PWM frequencies up to 1 MHz in buck converter high-side switch applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum blocking voltage for 12 V rail and Li-ion battery system protection |
| RDS(on) | 0.040 Ω at VGS = -4.5 V - Enables ≤250 mW conduction loss at 6.2 A continuous load |
| ID (continuous) | -6.2 A at TA = 25 °C - Supports medium-power load switching without forced air cooling |
| VGS(th) | -0.6 V to -1.5 V - Ensures robust turn-on with ±3.3 V or ±5 V gate drivers |
| Qg | 8.8–14 nC - Determines gate drive power requirement and switching speed in 500 kHz–1 MHz designs |
| trr | 35–55 ns - Limits reverse recovery losses during synchronous rectification in buck converters |
| RthJA | 80 °C/W (steady-state) - Requires ≥1 cm² copper pour for safe operation at full rated current |
Pinout & Package
SI9433BDY-T1-GE3 is housed in a standard SO-8 (MS-012) surface-mount package with exposed drain pad for thermal dissipation. Pin 1 is Gate, Pins 2–4 and 5–7 are Source terminals (internally paralleled), and Pin 8 is Drain.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control input requiring negative voltage relative to source to turn on; low gate capacitance enables fast switching |
| 2, 3, 4, 5, 6, 7 | Source | Common source node; six pins internally bonded to reduce package inductance and improve current sharing |
| 8 | Drain | Main power output terminal; connected to exposed copper pad for thermal conduction to PCB ground plane |
Key Features
| Feature | Design Value |
|---|---|
| Halogen-free & RoHS-compliant | Meets IEC 61249-2-21 and Directive 2002/95/EC - required for consumer electronics export compliance |
| Low RDS(on) at -2.7 V VGS | 0.060 Ω - supports direct interface with low-voltage microcontroller GPIOs without level-shifting |
| Enhanced body diode performance | VSD = -0.76 to -1.1 V at IS = -2.6 A - reduces forward drop and improves efficiency in reverse-conduction phases |
| SO-8 footprint with thermal pad | Standard JEDEC MS-012 outline - enables drop-in replacement in existing layouts using 5.0 × 4.0 mm land pattern |
| Fast switching dynamics | tr = 55–85 ns, tf = 30–45 ns - minimizes overlap losses in synchronous buck topologies operating above 300 kHz |
Applications
| Battery Protection Circuit | USB Power Delivery Switch |
|---|---|
Use Scenario: Reverse-current blocking and overcurrent cutoff in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: High-side P-channel switch controlled by battery protection IC to disconnect load during fault conditions. Use Value: Low RDS(on) limits voltage drop across switch during normal operation, preserving battery runtime and minimizing thermal stress on PCB. |
Use Scenario: 5 V/3 A power path control in USB-C receptacle modules with reversible plug detection. IC Role / Device Role / Timing Role: Load switch enabling/disabling VBUS connection based on CC line signaling state. Use Value: Verified trr ≤ 55 ns ensures clean turn-off without shoot-through during hot-plug events, meeting USB PD 3.0 timing requirements. |
| DC-DC Synchronous Rectifier | Industrial I/O Module Output Stage |
Use Scenario: Secondary-side synchronous rectification in isolated 12 V to 3.3 V flyback converters for industrial sensors. IC Role / Device Role / Timing Role: Low-side synchronous rectifier driven by transformer-coupled gate signal in quasi-resonant topology. Use Value: 0.040 Ω RDS(on) at -4.5 V reduces conduction loss by >40% versus Schottky diode alternatives, improving efficiency from 82% to 89% at 2 A load. |
Use Scenario: 24 V DC output stage for programmable logic controller (PLC) digital output modules with short-circuit protection. IC Role / Device Role / Timing Role: High-side switch isolating field-side loads from backplane power bus under firmware control. Use Value: Absolute maximum VDS = -20 V provides 4 V margin above 18 V minimum industrial supply, preventing avalanche failure during transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7425PbF | RDS(on) = 0.055 Ω at VGS = -4.5 V; higher Qg (22 nC); TO-252 package | Requires larger PCB area and heatsinking due to DPAK thermal resistance (RthJA = 62 °C/W) | Prefer when higher surge current capability (IDM = -60 A) is needed over board space constraints |
| DMG2305UVT-7 | RDS(on) = 0.045 Ω at VGS = -4.5 V; smaller SOT-26 package; lower ID rating (-4.2 A) | Limited to ≤3 A continuous loads; unsuitable for >1 W power dissipation without derating | Prefer for ultra-compact designs where peak current stays below 3.5 A and thermal budget is tight |
Compared with IRF7425PbF and DMG2305UVT-7, SI9433BDY-T1-GE3 delivers optimal balance of low RDS(on), SO-8 thermal performance, and industry-standard footprint - making it the preferred choice for mid-power load switching where layout reuse and thermal reliability are critical.
Availability
SI9433BDY-T1-GE3 is available at Aetrix Electronics and suitable for battery protection circuits, USB power delivery switches, and DC-DC synchronous rectifiers requiring stable component supply, long-term lifecycle support, and halogen-free compliance.
Supply support for SI9433BDY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.
The Si9433BDY product line targets high-density power management in portable and industrial electronics, delivering optimized P-channel MOSFETs for load switching and synchronous rectification with strict environmental compliance.
FAQ
What is the maximum continuous drain current rating for SI9433BDY-T1-GE3 at 70 °C ambient temperature?
The SI9433BDY-T1-GE3 supports -5.0 A continuous drain current at TA = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capability at elevated ambient temperatures and assumes standard FR4 PCB mounting with recommended copper area per Vishay Application Note 826.
Does SI9433BDY-T1-GE3 have an integrated body diode, and what is its forward voltage?
Yes, SI9433BDY-T1-GE3 includes a built-in body diode with forward voltage VSD = -0.76 V to -1.1 V at IS = -2.6 A and VGS = 0 V. This diode is fully characterized in the datasheet and supports reverse-conduction operation in synchronous rectifier and bidirectional load switch applications.
Is SI9433BDY-T1-GE3 pin-compatible with other SO-8 P-channel MOSFETs like Si2323DS?
No, SI9433BDY-T1-GE3 is not pin-compatible with Si2323DS. While both use SO-8 packages, SI9433BDY-T1-GE3 assigns Pins 2–4 and 5–7 to Source and Pin 8 to Drain, whereas Si2323DS uses different internal bonding. Always verify pinout diagrams before substitution - SI9433BDY-T1-GE3's specific pin mapping is confirmed in Document Number 72755, Figure 1.
What is the gate threshold voltage range for SI9433BDY-T1-GE3, and how does it affect drive requirements?
The gate threshold voltage VGS(th) for SI9433BDY-T1-GE3 is -0.6 V to -1.5 V at ID = -250 µA. This low threshold enables reliable turn-on with logic-level negative gate drive (e.g., from a microcontroller GPIO pulled down through a resistor), but requires careful attention to noise immunity since small positive excursions on the gate can partially turn off the device.
Can SI9433BDY-T1-GE3 be used in linear regulation mode?
SI9433BDY-T1-GE3 is not characterized or rated for linear (ohmic) regulation operation. Its Safe Operating Area (SOA) graph shows limited DC capability, and the datasheet specifies only pulsed and continuous switching conditions. For linear regulation, a dedicated LDO or bipolar transistor with SOA-rated derating should be used instead of SI9433BDY-T1-GE3.
SI9433BDY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.7V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 40mOhm @ 6.2A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.3W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI9433BDY-T1-GE3 FAQ
1.How can I place an order for SI9433BDY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI9433BDY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI9433BDY-T1-GE3 reliable?
The price and inventory of SI9433BDY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI9433BDY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI9433BDY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI9433BDY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI9433BDY-T1-GE3?
SI9433BDY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI9433BDY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI9433BDY-T1-GE3?
For technical support, including SI9433BDY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI9433BDY-T1-GE3 requirements.
6.How does Aetrix verify that SI9433BDY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI9433BDY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI9433BDY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI9433BDY-T1-GE3?
All SI9433BDY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI9433BDY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI9433BDY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI9433BDY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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