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Vishay Siliconix SI9434BDY-T1-GE3
- Part No.:
- SI9434BDY-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
SI9434BDY-T1-GE3.pdf
- Description:
- MOSFET P-CH 20V 4.5A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:4,010
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Product details
Overview
SI9434BDY-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET rated for -20 V drain-source voltage, 0.040 Ω RDS(on) at VGS = -4.5 V, and -6.3 A continuous drain current at TA = 25 °C. It operates in load-switch and power-distribution roles within industrial DC-DC converters and USB power management circuits.
For engineers reviewing the SI9434BDY-T1-GE3 datasheet, SI9434BDY-T1-GE3 pinout, SI9434BDY-T1-GE3 application, or SI9434BDY-T1-GE3 equivalent, key selection criteria include its halogen-free and RoHS-compliant SO-8 package, low gate charge (12–18 nC), and guaranteed -1.5 V maximum gate threshold voltage for reliable turn-on with 3.3 V logic-level control.
Technical Context
This device uses silicon planar technology with optimized channel geometry to achieve stable RDS(on) across -55 °C to 150 °C junction temperature. Its gate threshold voltage range (-0.45 V to -1.5 V) ensures predictable turn-on behavior under varying thermal and supply conditions.
The SO-8 package provides dual-drain configuration (pins 1, 2, 3, 4, 5, 6, 7, 8 mapped as S–G–D–D–D–D–D–S), enabling high-current source-sink capability while maintaining low thermal resistance (RthJA = 45–50 °C/W for 10 s pulse).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum blocking voltage in reverse-polarity protection and high-side switch applications |
| RDS(on) | 0.040 Ω at VGS = -4.5 V - Enables <100 mW conduction loss at 5 A, critical for thermally constrained PCB layouts |
| ID (cont) | -6.3 A at TA = 25 °C - Supports sustained load switching in 5 V/3.3 V rail controllers without forced airflow |
| Qg | 12–18 nC - Reduces gate-drive power and switching transition time in high-frequency PWM circuits |
| VGS(th) | -0.45 to -1.5 V - Ensures full enhancement with standard 3.3 V microcontroller GPIOs, no level-shifting required |
| TJ range | -55 to +150 °C - Qualified for extended-temperature industrial and automotive under-hood auxiliary systems |
Pinout & Package
SI9434BDY-T1-GE3 is housed in a surface-mount SO-8 package with exposed drain pads for thermal performance. Pin 1 is Source, Pin 2 is Gate, Pins 3–8 are Drain (dual-side parallel connection).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 8 | Source | Common return path for load current; tied to system ground or negative rail in high-side configurations |
| 2 | Gate | Control input requiring ≤±8 V drive; low Qgs (1.7 nC) enables fast edge rates with minimal driver strength |
| 3–7 | Drain | Parallel-connected high-current output terminals; collectively handle full -6.3 A rating with reduced thermal impedance to PCB copper |
Key Features
| Feature | Design Value |
|---|---|
| Halogen-free construction | Complies with IEC 61249-2-21, eliminating corrosive off-gassing during reflow and long-term operation |
| Low RDS(on) at 2.5 V drive | 0.055 Ω at VGS = -2.5 V supports battery-powered systems using single-cell Li-ion (2.7–4.2 V) gate drive |
| Fast switching | Turn-off delay <130 ns and fall time <100 ns enable >1 MHz synchronous rectification in compact DC-DC modules |
| Integrated body diode | VSD = -0.8 to -1.2 V at -2.3 A allows bidirectional current handling in H-bridge motor drivers without external diodes |
Applications
| Reverse Polarity Protection | USB Power Switching |
|---|---|
Use Scenario: Prevents damage to downstream circuitry when input power is connected with incorrect polarity in industrial sensors and field instruments. IC Role / Device Role / Timing Role: High-side P-channel MOSFET configured as ideal diode replacement with near-zero forward drop. Use Value: Eliminates 0.3–0.7 V diode drop, preserving >98 % of input voltage for 3.3 V LDOs and microcontrollers. | Use Scenario: Enables/disables VBUS power delivery in USB 2.0 host ports per USB-IF specification. IC Role / Device Role / Timing Role: Load switch controlling 5 V rail with controlled slew rate to meet USB inrush current limits. Use Value: Qg and RDS(on) values ensure <1 ms turn-on and <100 mΩ on-resistance for compliant 500 mA port operation. |
| DC-DC Converter Synchronous Rectifier | Hot-Swap Controller Interface |
Use Scenario: Replaces Schottky diode in buck converter secondary side to improve efficiency in telecom power supplies. IC Role / Device Role / Timing Role: Low-side synchronous rectifier driven by controller's complementary gate signal. Use Value: 0.040 Ω RDS(on) reduces conduction loss by >60 % versus 0.4 V Schottky at 5 A, increasing full-load efficiency by ~2.5 %. | Use Scenario: Provides controlled inrush limiting and fault isolation in modular server backplanes and PCIe add-in cards. IC Role / Device Role / Timing Role: High-side switch interfaced with hot-swap controller IC (e.g., LTC4215) for precise current monitoring. Use Value: Guaranteed VGS(th) and tight RDS(on) tolerance allow accurate current-sense amplifier calibration over temperature. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7425PBF | RDS(on) = 0.042 Ω at -4.5 V; higher Qg (22 nC); TO-252 package | Requires larger PCB footprint and has higher gate-drive power demand | Prefer when board space allows DPAK and thermal mass exceeds SO-8 capability |
| DMN2020LFG-7 | RDS(on) = 0.045 Ω at -4.5 V; SO-8; lower ID rating (-4.9 A) | Not suitable for >5 A continuous loads; tighter VGS(th) distribution | Select when design prioritizes gate-threshold consistency over peak current capacity |
Compared with IRF7425PBF and DMN2020LFG-7, SI9434BDY-T1-GE3 delivers optimal balance of low RDS(on), moderate gate charge, and SO-8 thermal performance-making it preferred for space-constrained, medium-current industrial power switches where layout density and thermal management are co-critical.
Availability
SI9434BDY-T1-GE3 is available at Aetrix Electronics and suitable for industrial power management, USB-C PD accessories, and embedded DC-DC converter designs requiring stable component supply and halogen-free compliance.
Supply support for SI9434BDY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability power solutions.
The Si9434BDY product line targets high-efficiency, low-voltage load switching and synchronous rectification in compact industrial and portable electronics.
FAQ
What is the maximum continuous drain current for SI9434BDY-T1-GE3 at 70 °C ambient temperature?
The SI9434BDY-T1-GE3 supports -5.0 A continuous drain current at TA = 70 °C with proper PCB copper area. This rating assumes surface mounting on FR4 with ≥1 in² of 2-oz copper connected to drain pins, per Vishay's thermal test condition in Document 73050. Derating applies above this temperature.
Does SI9434BDY-T1-GE3 require a gate resistor for safe switching in 1 MHz DC-DC applications?
Yes - a 6 Ω gate resistor is specified in the SI9434BDY-T1-GE3 datasheet for switching characterization (td(on), tr, etc.). Using this value ensures controlled dv/dt and prevents ringing in high-frequency synchronous rectifier circuits. Lower values may cause overshoot; higher values increase switching losses.
Is SI9434BDY-T1-GE3 suitable for reverse battery protection in automotive 12 V systems?
No - SI9434BDY-T1-GE3 is rated for -20 V VDS, making it unsuitable for 12 V automotive systems where load dump transients exceed -35 V. It is designed for 5 V/3.3 V industrial and consumer applications. For automotive, consider -40 V or -60 V P-channel MOSFETs with AEC-Q101 qualification.
What is the typical source-drain diode forward voltage of SI9434BDY-T1-GE3 at -2.3 A?
The SI9434BDY-T1-GE3 exhibits a typical VSD of -0.8 V at -2.3 A and 25 °C, with a maximum of -1.2 V. This body diode performance is confirmed in the "Diode Forward Voltage" section of the datasheet (Document 73050), and remains stable up to 125 °C junction temperature.
How does the halogen-free status of SI9434BDY-T1-GE3 affect its assembly process?
The SI9434BDY-T1-GE3 meets IEC 61249-2-21 halogen-free requirements, meaning bromine and chlorine content is <900 ppm each. This eliminates corrosive halogen gas generation during reflow soldering and long-term operation, improving reliability in humid or sealed enclosures without requiring process changes.
SI9434BDY-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 40mOhm @ 6.3A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 1.3W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
SI9434BDY-T1-GE3 FAQ
1.How can I place an order for SI9434BDY-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SI9434BDY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SI9434BDY-T1-GE3 reliable?
The price and inventory of SI9434BDY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI9434BDY-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SI9434BDY-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI9434BDY-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SI9434BDY-T1-GE3?
SI9434BDY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SI9434BDY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SI9434BDY-T1-GE3?
For technical support, including SI9434BDY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI9434BDY-T1-GE3 requirements.
6.How does Aetrix verify that SI9434BDY-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SI9434BDY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI9434BDY-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SI9434BDY-T1-GE3?
All SI9434BDY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI9434BDY-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SI9434BDY-T1-GE3 part is unused and in its original packaging.
Return procedure for SI9434BDY-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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