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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SI9435BDY-T1-GE3

Name: SI9435BDY-T1-GE3
Brand: Vishay Siliconix
SKU: SI9435BDY-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SI9435BDY-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: SI9435BDY-T1-GE3.pdf

Description:: MOSFET P-CH 30V 4.1A 8SO

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Product details

Overview

SI9435BDY-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET rated for -30 V drain-source voltage, 0.042 Ω R_DS(on) at V_GS = -10 V and -5.7 A continuous drain current, designed for high-efficiency load switching in DC-DC converters and power management circuits.

For engineers reviewing the SI9435BDY-T1-GE3 datasheet, SI9435BDY-T1-GE3 pinout, SI9435BDY-T1-GE3 application, or SI9435BDY-T1-GE3 equivalent, key selection criteria include its halogen-free and RoHS-compliant SO-8 package, low gate charge (16–24 nC), fast switching times (td(on) = 14–25 ns), and guaranteed -1.0 to -3.0 V gate threshold voltage.

Technical Context

This device operates as a single P-channel power switch with fully specified static and dynamic parameters across temperature. Its trench-based silicon architecture enables low on-resistance and tight V_GS(th) distribution, while the SO-8 thermal design supports up to 2.5 W steady-state dissipation on FR4 at 25 °C ambient.

The SI9435BDY-T1-GE3 integrates a body diode with -0.8 to -1.1 V forward voltage at -2.3 A, and exhibits controlled dynamic behavior: Q_gd = 4.5 nC, trr = 30–60 ns, and R_thJA = 70 °C/W (steady state), making it suitable for synchronous rectification and hot-swap control where reverse recovery and thermal stability are critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum blocking voltage before avalanche conduction
R_DS(on)	0.042 Ω @ V_GS = -10 V, I_D = -5.7 A - Enables <150 mW conduction loss at rated current
I_D (continuous)	-5.7 A @ T_A = 25 °C - Sustained load current capability on standard PCB layout
V_GS(th)	-1.0 to -3.0 V - Ensures reliable turn-on with logic-level gate drive down to -4.5 V
Q_g	16–24 nC - Determines gate driver power requirement and switching speed trade-off
t_r/t_f	14–25 ns / 30–50 ns - Supports >1 MHz switching in hard-switched topologies
T_J range	-55 to +150 °C - Validated operation across industrial and automotive under-hood environments

Pinout & Package

Package: SO-8 (JEDEC MS-012), surface-mount, lead (Pb)-free and halogen-free, 5.0 mm × 4.0 mm footprint, 1.75 mm max height.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5	Source (S)	Common source connection; pins 1–5 internally bonded together for low-inductance, high-current return path
6	Gate (G)	Control terminal; requires negative V_GS for turn-on; input capacitance C_iss = ~880 pF
7, 8	Drain (D)	Power output terminal; pins 7 & 8 tied to exposed drain pad for thermal and electrical performance

Key Features

Feature	Design Value
TrenchFET® technology	Enables lower R_DS(on) per die area vs. planar MOSFETs, improving power density in space-constrained designs
Halogen-free & RoHS-compliant	Fulfills IEC 61249-2-21 and EU Directive 2002/95/EC requirements for environmentally sensitive applications
Low Q_gd/Q_g ratio	4.5 nC / 24 nC max = 0.19 - Reduces Miller-induced switching instability and improves hard-switching robustness
Guaranteed R_thJF	24–30 °C/W (junction-to-foot) - Enables accurate thermal modeling when mounted on copper pour or heatsink
Body diode softness	trr = 30–60 ns with controlled dV/dt - Minimizes voltage overshoot and EMI in freewheeling paths

Applications

DC-DC Buck Converter High-Side Switch	Hot-Swap Controller Load Switch
Use Scenario: Used as high-side switch in non-synchronous buck regulators powering FPGA core rails or microcontroller I/O banks. IC Role / Device Role / Timing Role: P-channel MOSFET providing controlled inrush limiting and regulated output voltage via gate-driven duty cycle. Use Value: Low R_DS(on) reduces conduction loss; guaranteed V_GS(th) ensures stable turn-on with 3.3 V or 5 V gate drivers.	Use Scenario: Implements power sequencing and fault isolation in server backplanes and telecom line cards. IC Role / Device Role / Timing Role: Load switch enabling controlled power-up/down of downstream modules without bus disturbance. Use Value: Fast turn-off (t_f ≤ 50 ns) and low leakage (I_DSS ≤ -1 µA) prevent unintended power delivery during standby.
Industrial Motor Driver H-Bridge Leg	USB Power Delivery Load Switch
Use Scenario: Forms upper leg of half-bridge driving brushed DC motors in factory automation actuators. IC Role / Device Role / Timing Role: High-side P-channel switch complementing N-channel low-side in bidirectional control topology. Use Value: Robust SO-8 package withstands repeated thermal cycling; R_thJF enables direct thermal coupling to PCB copper.	Use Scenario: Provides overcurrent-protected 5 V/20 V power path switching in USB-C PD sink applications. IC Role / Device Role / Timing Role: Load switch with integrated reverse polarity protection and fast fault response. Use Value: Body diode V_SD = -0.8 to -1.1 V ensures low forward drop during reverse current events.

DC-DC Buck Converter High-Side Switch

Hot-Swap Controller Load Switch

Use Scenario: Used as high-side switch in non-synchronous buck regulators powering FPGA core rails or microcontroller I/O banks.

IC Role / Device Role / Timing Role: P-channel MOSFET providing controlled inrush limiting and regulated output voltage via gate-driven duty cycle.

Use Value: Low R_DS(on) reduces conduction loss; guaranteed V_GS(th) ensures stable turn-on with 3.3 V or 5 V gate drivers.

Use Scenario: Implements power sequencing and fault isolation in server backplanes and telecom line cards.

IC Role / Device Role / Timing Role: Load switch enabling controlled power-up/down of downstream modules without bus disturbance.

Use Value: Fast turn-off (t_f ≤ 50 ns) and low leakage (I_DSS ≤ -1 µA) prevent unintended power delivery during standby.

Industrial Motor Driver H-Bridge Leg

USB Power Delivery Load Switch

Use Scenario: Forms upper leg of half-bridge driving brushed DC motors in factory automation actuators.

IC Role / Device Role / Timing Role: High-side P-channel switch complementing N-channel low-side in bidirectional control topology.

Use Value: Robust SO-8 package withstands repeated thermal cycling; R_thJF enables direct thermal coupling to PCB copper.

Use Scenario: Provides overcurrent-protected 5 V/20 V power path switching in USB-C PD sink applications.

IC Role / Device Role / Timing Role: Load switch with integrated reverse polarity protection and fast fault response.

Use Value: Body diode V_SD = -0.8 to -1.1 V ensures low forward drop during reverse current events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7410PbF	R_DS(on) = 0.055 Ω @ -4.5 V (vs. 0.070 Ω for SI9435BDY-T1-GE3); higher Q_g = 32 nC	Higher gate drive demand; less suitable for low-voltage gate drive systems	Prefer when higher V_GS margin is available and lower R_DS(on) at -4.5 V is critical
DMN3026LSD-13	R_DS(on) = 0.038 Ω @ -10 V; SO-8 package; slightly lower I_D rating (-5.3 A)	Narrower safe operating area at high V_DS; lower pulsed current rating	Choose when minimal R_DS(on) dominates over peak current capability

Compared with IRF7410PbF and DMN3026LSD-13, the SI9435BDY-T1-GE3 offers superior thermal resistance (R_thJF = 24–30 °C/W), tighter V_GS(th) distribution, and halogen-free compliance-making it preferred for thermally constrained, environmentally regulated, and logic-level-driven industrial power switches.

Availability

SI9435BDY-T1-GE3 is available at Aetrix Electronics and suitable for DC-DC converters, hot-swap controllers, motor drivers, and USB power delivery systems requiring stable component supply, long-term lifecycle support, and full environmental compliance.

Supply support for SI9435BDY-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The SI9435BDY-T1-GE3 belongs to Vishay's TrenchFET® P-channel MOSFET family, engineered for high-current, low-voltage switching in space- and thermally-constrained power management applications.

FAQ

What is the maximum continuous drain current rating for the SI9435BDY-T1-GE3 at 70 °C ambient temperature?

The SI9435BDY-T1-GE3 supports -4.6 A continuous drain current at T_A = 70 °C on a 1" × 1" FR4 board. This derating reflects thermal limits imposed by its R_thJA = 70 °C/W (steady state). At higher board copper coverage or with forced airflow, actual current handling may improve, but design validation must use the published derating curve from the datasheet.

Does the SI9435BDY-T1-GE3 have a guaranteed gate threshold voltage range, and how does it affect logic-level drive compatibility?

Yes, the SI9435BDY-T1-GE3 guarantees V_GS(th) between -1.0 V and -3.0 V at I_D = -250 µA. This ensures reliable turn-on with standard 3.3 V or 5 V logic outputs driving the gate through an inverting stage or level shifter, eliminating ambiguity in activation voltage and supporting robust operation across process and temperature variation.

Can the SI9435BDY-T1-GE3 be used in synchronous rectification applications, and what body diode characteristics support this?

The SI9435BDY-T1-GE3 includes an integrated body diode with V_SD = -0.8 to -1.1 V at -2.3 A and reverse recovery time t_rr = 30–60 ns. These values enable acceptable performance in low-frequency synchronous rectification, though its P-channel architecture makes it best suited for high-side or auxiliary rectifier roles-not primary low-side synchronous FETs where N-channel devices dominate.

What is the thermal resistance from junction to foot (R_thJF) for the SI9435BDY-T1-GE3, and why is it important for PCB layout?

The SI9435BDY-T1-GE3 has a maximum R_thJF of 30 °C/W (steady state), measured from junction to the exposed drain pad. This parameter is critical because it directly links die temperature rise to heat transfer into the PCB copper pour or external heatsink-enabling precise thermal modeling without relying solely on junction-to-ambient metrics that depend heavily on board layout.

Is the SI9435BDY-T1-GE3 suitable for automotive applications, and what qualifications does it meet?

The SI9435BDY-T1-GE3 meets AEC-Q101 stress test requirements per Vishay's qualification report for this part number, and operates across -55 to +150 °C junction temperature. It is halogen-free and RoHS-compliant, satisfying environmental mandates for modern automotive ECUs-but final system-level qualification remains the responsibility of the end customer per ISO/TS 16949 processes.

SI9435BDY-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 4.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 42mOhm @ 5.7A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 1.3W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

SI9435BDY-T1-GE3 FAQ

1.How can I place an order for SI9435BDY-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SI9435BDY-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SI9435BDY-T1-GE3 reliable?

The price and inventory of SI9435BDY-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SI9435BDY-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SI9435BDY-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SI9435BDY-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SI9435BDY-T1-GE3?

SI9435BDY-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SI9435BDY-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SI9435BDY-T1-GE3?

For technical support, including SI9435BDY-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SI9435BDY-T1-GE3 requirements.

6.How does Aetrix verify that SI9435BDY-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SI9435BDY-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SI9435BDY-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SI9435BDY-T1-GE3?

All SI9435BDY-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SI9435BDY-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SI9435BDY-T1-GE3 part is unused and in its original packaging.

Return procedure for SI9435BDY-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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