Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIA108DJ-T1-GE3

Name: SIA108DJ-T1-GE3
Brand: Vishay Siliconix
SKU: SIA108DJ-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SIA108DJ-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SC-70-6

Datasheet:: SIA108DJ-T1-GE3.pdf

Description:: MOSFET N-CH 80V 6.6A/12A PPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,674

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SIA108DJ-T1-GE3 from Vishay Siliconix is an N-channel 80 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SC-70-6L package, delivering R_DS(on) = 0.038 Ω at V_GS = 10 V, Q_g = 7.1 nC (typ), and 12 A continuous drain current at T_C = 25 °C - optimized for primary-side switching in compact DC/DC converters.

For engineers reviewing the SIA108DJ-T1-GE3 datasheet, SIA108DJ-T1-GE3 pinout, SIA108DJ-T1-GE3 application, or SIA108DJ-T1-GE3 equivalent, key selection criteria include its low R_DS(on) × Q_oss figure of merit, 100% R_g and UIS testing, and thermal performance with R_thJC = 5.3 °C/W (typ) for high-efficiency, space-constrained power stages.

Technical Context

This MOSFET employs TrenchFET® Gen IV silicon technology to minimize conduction and switching losses simultaneously, with a gate threshold voltage (V_GS(th)) of 2–4 V and guaranteed 100% gate resistance (R_g) screening. Its dynamic parameters - C_iss = 545 pF, C_oss = 75 pF, C_rss = 9 pF at V_DS = 40 V - support fast, low-noise switching in hard-switched topologies.

The device integrates a robust body diode with t_rr = 30–60 ns and Q_rr = 25–50 nC, enabling reliable operation in synchronous rectification and freewheeling roles. Thermal design is supported by validated junction-to-case (R_thJC) and junction-to-ambient (R_thJA = 28–36 °C/W) metrics under standardized FR4 board conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - supports primary-side switching in 48 V input DC/DC and boost converters without derating.
R_DS(on) max @ V_GS = 10 V	0.038 Ω - enables ≤ 1.8 W conduction loss at 7 A, critical for thermally constrained SC-70 layouts.
Q_g typ	7.1 nC - reduces gate drive power and allows use with low-current controllers in portable power supplies.
I_D continuous @ T_C = 25 °C	12 A - defines maximum steady-state current when mounted on heatsink-equipped PCBs per JEDEC standards.
R_thJC typical	5.3 °C/W - confirms efficient heat transfer from die to case, enabling >12 W dissipation with modest heatsinking.
V_GS(th)	2–4 V - ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers.
E_AS	7.2 mJ - quantifies single-pulse avalanche energy handling, supporting robustness in inductive load switching.

Pinout & Package

Package: PowerPAK® SC-70-6L - leadless, surface-mount, 2.05 mm × 2.05 mm footprint with exposed drain copper pads on bottom side for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
1, 3, 4, 5	Drain (D)	Four parallel drain terminals tied internally; provide low-inductance, high-current path and primary thermal conduction path to PCB.
2	Gate (G)	Single gate input; requires <1.3 Ω gate resistance for optimal switching speed and EMI control per datasheet test conditions.
6	Source (S)	Source reference terminal; forms return path for load current and gate drive loop - critical for minimizing shoot-through risk.

Key Features

Feature	Design Value
TrenchFET® Gen IV silicon	Delivers lowest R_DS(on) × Q_oss among comparable 80 V SC-70 MOSFETs, reducing total switching + conduction loss.
100% R_g and UIS tested	Ensures gate integrity and ruggedness against unclamped inductive switching stress - no screening escapes in production.
Low Q_gd/Q_g ratio	Q_gd = 1.7 nC / Q_g = 7.1 nC ≈ 24% - improves Miller immunity and enables stable operation with high dV/dt.
Body diode t_rr	30–60 ns - supports efficient freewheeling in non-synchronous buck or boost without external Schottky.
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization standard (doc#99912).

Applications

Primary Side Switch	DC/DC Converter
Use Scenario: High-frequency flyback or forward converter primary switch in industrial power supplies. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from input to transformer primary winding. Use Value: Low R_DS(on) minimizes conduction loss at full load; low Q_g enables clean 500 kHz+ switching with minimal gate drive overhead.	Use Scenario: Step-down (buck) or step-up (boost) regulator in space-limited embedded systems. IC Role / Device Role / Timing Role: Synchronous rectifier or high-side switch managing regulated output voltage via PWM duty cycle. Use Value: R_DS(on) = 0.038 Ω at 10 V gate drive delivers <1.5 W loss at 6 A, enabling >92% efficiency in 12 V → 5 V conversion.
Motor Drive Switch	LED Backlighting
Use Scenario: Low-voltage brushed DC motor H-bridge half-bridge leg in battery-powered tools or actuators. IC Role / Device Role / Timing Role: Unidirectional current switch controlling motor direction and speed via PWM modulation. Use Value: 12 A I_D rating supports peak stall currents up to 30 A (IDM); body diode t_rr < 60 ns prevents cross-conduction during dead-time.	Use Scenario: Constant-current LED driver for LCD backlight in portable medical displays or handheld instrumentation. IC Role / Device Role / Timing Role: PWM-controlled current sink regulating LED string brightness with precise dimming resolution. Use Value: Fast turn-off (t_f = 5–10 ns) enables clean 1–20 kHz dimming without visible flicker; low V_SD = 0.82 V reduces forward drop loss.

Primary Side Switch

DC/DC Converter

Use Scenario: High-frequency flyback or forward converter primary switch in industrial power supplies.

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from input to transformer primary winding.

Use Value: Low R_DS(on) minimizes conduction loss at full load; low Q_g enables clean 500 kHz+ switching with minimal gate drive overhead.

Use Scenario: Step-down (buck) or step-up (boost) regulator in space-limited embedded systems.

IC Role / Device Role / Timing Role: Synchronous rectifier or high-side switch managing regulated output voltage via PWM duty cycle.

Use Value: R_DS(on) = 0.038 Ω at 10 V gate drive delivers <1.5 W loss at 6 A, enabling >92% efficiency in 12 V → 5 V conversion.

Motor Drive Switch

LED Backlighting

Use Scenario: Low-voltage brushed DC motor H-bridge half-bridge leg in battery-powered tools or actuators.

IC Role / Device Role / Timing Role: Unidirectional current switch controlling motor direction and speed via PWM modulation.

Use Value: 12 A I_D rating supports peak stall currents up to 30 A (IDM); body diode t_rr < 60 ns prevents cross-conduction during dead-time.

Use Scenario: Constant-current LED driver for LCD backlight in portable medical displays or handheld instrumentation.

IC Role / Device Role / Timing Role: PWM-controlled current sink regulating LED string brightness with precise dimming resolution.

Use Value: Fast turn-off (t_f = 5–10 ns) enables clean 1–20 kHz dimming without visible flicker; low V_SD = 0.82 V reduces forward drop loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 80 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiA913EDJ-T1-GE3	Lower V_DS = 30 V; R_DS(on) = 0.013 Ω @ 10 V; Q_g = 5.2 nC; same PowerPAK SC-70-6L package.	Restricted to ≤30 V input rails; unsuitable for 48 V primary-side switching but superior for 12 V motor drives.	Select only if system V_IN ≤30 V and lower R_DS(on) is prioritized over voltage rating.
DMN3026LSD-13	60 V V_DS; R_DS(on) = 0.026 Ω @ 10 V; Q_g = 6.5 nC; PowerDI™ 3330 package (3.3 mm × 3.3 mm).	Larger footprint; higher thermal resistance (R_thJA ≈ 60 °C/W); not pin-compatible with SC-70 layout.	Choose when higher power dissipation (>20 W) is required and board area permits larger package.

Compared with SiA108DJ-T1-GE3, SiA913EDJ-T1-GE3 trades voltage headroom for lower loss at low voltages, while DMN3026LSD-13 offers higher current capability at the cost of PCB area and thermal efficiency - neither is pin-compatible, requiring layout revision.

Availability

SIA108DJ-T1-GE3 is available at Aetrix Electronics and suitable for DC/DC converters, LED backlighting drivers, and motor drive switches requiring stable component supply across industrial and embedded production cycles.

Supply support for SIA108DJ-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with global manufacturing and reliability validation across qualified sites.

The SIA108DJ-T1-GE3 belongs to Vishay's TrenchFET® Gen IV power MOSFET family, engineered specifically for high-efficiency, high-density DC/DC conversion and primary-side switching in space-constrained applications.

FAQ

What is the maximum continuous drain current rating for SIA108DJ-T1-GE3 at 70 °C case temperature?

The SIA108DJ-T1-GE3 supports 12 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area and thermal vias per Vishay's recommended layout for PowerPAK SC-70-6L. Derating applies above 70 °C case temperature per the current derating curve on page 5 of the datasheet.

Does SIA108DJ-T1-GE3 require a gate resistor for stable operation?

Yes - the SIA108DJ-T1-GE3 datasheet specifies gate resistance testing at R_g = 1 Ω for switching time characterization. A gate resistor between 1 Ω and 10 Ω is recommended to control dV/dt, suppress ringing, and prevent shoot-through in half-bridge configurations. The device's R_g parameter (0.3–2.6 Ω) reflects intrinsic gate resistance, not external drive impedance.

Is SIA108DJ-T1-GE3 suitable for synchronous rectification in a buck converter?

No - the SIA108DJ-T1-GE3 is an N-channel MOSFET intended for high-side or primary-side switching, not low-side synchronous rectification. Its body diode forward voltage (V_SD = 0.82 V) and reverse recovery characteristics are not optimized for freewheeling paths where ultra-low V_F and fast t_rr are critical. Use dedicated low-V_F Schottky or logic-level N-channel devices for synchronous rectification.

What is the thermal resistance from junction to ambient (R_thJA) for SIA108DJ-T1-GE3 under standard test conditions?

The SIA108DJ-T1-GE3 has a typical R_thJA of 28 °C/W and maximum of 36 °C/W when mounted on a 1" × 1" FR4 board with 2 oz copper, per JEDEC JESD51-3. This value assumes no additional heatsinking; actual R_thJA will improve with thermal vias and copper pour, but must be measured on the target PCB layout.

Can SIA108DJ-T1-GE3 be used with 3.3 V microcontroller GPIO for gate drive?

No - the SIA108DJ-T1-GE3 has a gate threshold voltage range of 2–4 V and requires ≥7.5 V gate drive to achieve its rated R_DS(on) = 0.046 Ω. At 3.3 V, the device operates in linear mode with significantly higher R_DS(on), leading to excessive conduction loss and thermal runaway. A dedicated gate driver or level shifter is mandatory for 3.3 V control interfaces.

SIA108DJ-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SC-70-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 6.6A (Ta), 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 38mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 545 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 3.5W (Ta), 19W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SC-70-6

SIA108DJ-T1-GE3 FAQ

1.How can I place an order for SIA108DJ-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIA108DJ-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIA108DJ-T1-GE3 reliable?

The price and inventory of SIA108DJ-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIA108DJ-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIA108DJ-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIA108DJ-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIA108DJ-T1-GE3?

SIA108DJ-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIA108DJ-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIA108DJ-T1-GE3?

For technical support, including SIA108DJ-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIA108DJ-T1-GE3 requirements.

6.How does Aetrix verify that SIA108DJ-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIA108DJ-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIA108DJ-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIA108DJ-T1-GE3?

All SIA108DJ-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIA108DJ-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIA108DJ-T1-GE3 part is unused and in its original packaging.

Return procedure for SIA108DJ-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …