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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIA110DJ-T1-GE3

Name: SIA110DJ-T1-GE3
Brand: Vishay Siliconix
SKU: SIA110DJ-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIA110DJ-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SC-70-6

Datasheet:: SIA110DJ-T1-GE3.pdf

Description:: MOSFET N-CH 100V 5.4A/12A PPAK

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Product details

Overview

SIA110DJ-T1-GE3 from Vishay Siliconix is an N-channel 100 V (D-S) TrenchFET® Gen IV power MOSFET in PowerPAK® SC-70-6L package, with R_DS(on) = 0.055 Ω @ V_GS = 10 V, Q_g = 6.5 nC (typ.), and continuous drain current I_D = 12 A at T_C = 25 °C. It serves as a primary-side switch in high-efficiency DC/DC converters and motor drive circuits.

For engineers reviewing the SIA110DJ-T1-GE3 datasheet, SIA110DJ-T1-GE3 pinout, SIA110DJ-T1-GE3 application, or SIA110DJ-T1-GE3 equivalent, this page delivers verified electrical parameters, thermal resistance data (R_thJC = 5.3 °C/W), body diode characteristics (V_SD = 0.85 V typ. @ I_S = 4 A), and validated alternative part options for power switching design validation.

Technical Context

This MOSFET employs trench-based silicon architecture optimized for low R_DS(on) × Q_oss product-critical for reducing conduction and switching losses in high-frequency hard-switched topologies. Its gate threshold voltage V_GS(th) ranges from 2 V to 4 V, enabling robust turn-on with standard 7.5 V or 10 V gate drivers.

The device integrates 100% R_g and UIS testing per unit, supports pulsed drain current I_DM = 20 A, and features a body diode with t_rr = 50 ns (typ.) and Q_rr = 55 nC (typ.), suitable for synchronous rectification and freewheeling in boost and flyback converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum drain-source blocking voltage; defines use in ≤100 V bus applications like 48 V industrial supplies.
R_DS(on) max @ 10 V	0.055 Ω - Low on-resistance enables <1 W conduction loss at 4 A, supporting compact thermal design.
Q_g typ.	6.5 nC - Low total gate charge reduces driver power demand and improves switching efficiency above 500 kHz.
I_D continuous @ T_C = 25 °C	12 A - Rated current under heatsink-cooled conditions; derates to 4.3 A at ambient (T_A = 70 °C).
R_thJC max	6.5 °C/W - Junction-to-case thermal resistance confirms effective heat transfer to PCB copper or external heatsink.
V_GS(th)	2–4 V - Gate threshold range ensures reliable enhancement-mode operation with standard logic-level drivers.
C_iss	550 pF - Input capacitance impacts gate drive loop stability and EMI filtering requirements in high-dV/dt environments.

Pinout & Package

Package: PowerPAK® SC-70-6L - leadless surface-mount package with 2.05 mm × 2.05 mm footprint, exposed drain pad on bottom for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
1, 3, 4, 5	Drain (D)	Four parallel drain terminals tied internally to exposed copper pad; primary current path and thermal conduction path to PCB.
2	Gate (G)	Single gate input; requires controlled slew rate to minimize ringing due to low R_g (0.3–2.6 Ω) and Crss = 7 pF.
6	Source (S)	Source reference node; connects to power ground plane; critical for gate drive return path integrity and noise immunity.

Key Features

Feature	Design Value
TrenchFET® Gen IV process	Delivers lowest R_DS(on) × Q_oss ratio among comparable 100 V SC-70 MOSFETs, optimizing hard-switched efficiency.
100% R_g and UIS tested	Ensures gate robustness against transient overvoltage and avalanche energy tolerance up to E_AS = 5 mJ.
Body diode t_rr = 50 ns (typ.)	Enables fast commutation in synchronous buck or boost stages without external Schottky catch diodes.
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile for leadless packages.
Exposed drain thermal pad	Provides direct thermal path to PCB copper; achieves R_thJA = 28 °C/W (typ.) on 1" × 1" FR4 board.

Applications

Primary Side Switch	DC/DC Converter
Use Scenario: High-voltage side switch in isolated flyback or forward converter operating from 24–48 V input. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer to transformer primary; duty-cycle modulated at 100–500 kHz. Use Value: Low Q_g and R_DS(on) reduce switching and conduction losses, improving overall converter efficiency by ≥1.2% at full load.	Use Scenario: Non-isolated buck or boost regulator in telecom power modules delivering 3.3–12 V outputs. IC Role / Device Role / Timing Role: High-side switching element synchronized with controller IC; handles peak currents up to 12 A. Use Value: Fast t_r/t_f (5–10 ns) and low C_iss support clean PWM edges and reduced EMI filter size.
Motor Drive Switch	LED Backlighting
Use Scenario: H-bridge half-bridge leg in 24 V BLDC fan or pump driver with PWM speed control. IC Role / Device Role / Timing Role: Low-side or high-side switching transistor; switched at 10–25 kHz to regulate torque and direction. Use Value: Robust UIS rating and 100% avalanche-tested design withstand inductive kickback without snubbers.	Use Scenario: Boost-stage switch in LCD TV or monitor LED backlight driver supplying 60–120 V to series-connected LEDs. IC Role / Device Role / Timing Role: Primary switching transistor in current-regulated boost topology; operates at 200–600 kHz. Use Value: Optimized R_DS(on) × Q_oss minimizes power loss during high-duty-cycle operation, extending thermal margin.

Primary Side Switch

DC/DC Converter

Use Scenario: High-voltage side switch in isolated flyback or forward converter operating from 24–48 V input.

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer to transformer primary; duty-cycle modulated at 100–500 kHz.

Use Value: Low Q_g and R_DS(on) reduce switching and conduction losses, improving overall converter efficiency by ≥1.2% at full load.

Use Scenario: Non-isolated buck or boost regulator in telecom power modules delivering 3.3–12 V outputs.

IC Role / Device Role / Timing Role: High-side switching element synchronized with controller IC; handles peak currents up to 12 A.

Use Value: Fast t_r/t_f (5–10 ns) and low C_iss support clean PWM edges and reduced EMI filter size.

Motor Drive Switch

LED Backlighting

Use Scenario: H-bridge half-bridge leg in 24 V BLDC fan or pump driver with PWM speed control.

IC Role / Device Role / Timing Role: Low-side or high-side switching transistor; switched at 10–25 kHz to regulate torque and direction.

Use Value: Robust UIS rating and 100% avalanche-tested design withstand inductive kickback without snubbers.

Use Scenario: Boost-stage switch in LCD TV or monitor LED backlight driver supplying 60–120 V to series-connected LEDs.

IC Role / Device Role / Timing Role: Primary switching transistor in current-regulated boost topology; operates at 200–600 kHz.

Use Value: Optimized R_DS(on) × Q_oss minimizes power loss during high-duty-cycle operation, extending thermal margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiA913EDJ-T1-GE3	Lower V_DS = 30 V; R_DS(on) = 0.013 Ω @ 10 V; same PowerPAK SC-70-6L package.	Restricted to ≤30 V systems; unsuitable for 48 V primary-side switching but better for low-voltage motor drives.	Select only when bus voltage is ≤30 V and lower R_DS(on) is prioritized over voltage rating.
DMN3026LSD-13	Same V_DS = 100 V; R_DS(on) = 0.065 Ω @ 10 V; SO-8 package (larger footprint, higher R_thJA).	Requires PCB layout change; higher thermal resistance (R_thJA ≈ 62 °C/W) limits power density.	Choose when existing SO-8 layout exists and thermal margin allows higher junction temperature rise.

Compared with SiA110DJ-T1-GE3, SiA913EDJ-T1-GE3 trades voltage capability for lower on-resistance in low-voltage designs, while DMN3026LSD-13 offers identical voltage rating but sacrifices package miniaturization and thermal performance for legacy SO-8 compatibility.

Availability

SIA110DJ-T1-GE3 is available at Aetrix Electronics and suitable for DC/DC converters, motor drive switches, and LED backlighting applications requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for SIA110DJ-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIA110DJ-T1-GE3 belongs to Vishay's TrenchFET® Gen IV family, engineered specifically for high-frequency, high-efficiency power switching in space-constrained industrial and consumer power supplies.

FAQ

What is the maximum junction temperature rating for SIA110DJ-T1-GE3?

The SIA110DJ-T1-GE3 has an operating junction temperature range of –55 °C to +150 °C. This rating is confirmed in the Absolute Maximum Ratings table and supported by thermal characterization curves showing R_DS(on) drift versus T_J. The device must be operated within this limit to ensure reliability and avoid permanent degradation.

Does SIA110DJ-T1-GE3 support gate drive from a 5 V microcontroller?

No-SIA110DJ-T1-GE3 is not guaranteed to fully enhance with 5 V gate drive. Its V_GS(th) min is 2 V, but R_DS(on) is specified only at V_GS = 7.5 V and 10 V. At 5 V, R_DS(on) rises significantly (≥0.12 Ω), increasing conduction loss. A minimum 7.5 V gate drive is required for rated performance.

Is SIA110DJ-T1-GE3 suitable for avalanche operation?

Yes-SIA110DJ-T1-GE3 is 100% tested for Unclamped Inductive Switching (UIS) with single-pulse avalanche current I_AS = 10 A and energy E_AS = 5 mJ. This validates its ability to safely absorb inductive energy during switching transients without failure, provided layout minimizes stray inductance.

What is the recommended PCB pad layout for SIA110DJ-T1-GE3?

Vishay Application Note 826 specifies a dedicated pad layout for PowerPAK SC-70-6L: 0.65 mm pitch, 0.30–0.35 mm wide traces, and a 1.5 mm × 2.2 mm thermal pad with 0.235 mm solder mask opening. This ensures reliable solder fillet formation on the exposed drain and optimal thermal conduction to inner copper layers.

How does the body diode performance of SIA110DJ-T1-GE3 compare to external Schottky diodes?

The SIA110DJ-T1-GE3 body diode has V_SD = 0.85 V (typ.) and t_rr = 50 ns (typ.), which is slower and higher forward drop than most Schottky diodes (e.g., 0.45 V, <10 ns). It is adequate for non-synchronous freewheeling but not a replacement for high-efficiency synchronous rectification where external Schottky or MOSFETs are preferred.

SIA110DJ-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET® Gen IV

Package/Case:: PowerPAK® SC-70-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 5.4A (Ta), 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 7.5V, 10V

Rds On (Max) @ Id, Vgs:: 55mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 550 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 3.5W (Ta), 19W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SC-70-6

SIA110DJ-T1-GE3 FAQ

1.How can I place an order for SIA110DJ-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIA110DJ-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIA110DJ-T1-GE3 reliable?

The price and inventory of SIA110DJ-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIA110DJ-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIA110DJ-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIA110DJ-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIA110DJ-T1-GE3?

SIA110DJ-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIA110DJ-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIA110DJ-T1-GE3?

For technical support, including SIA110DJ-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIA110DJ-T1-GE3 requirements.

6.How does Aetrix verify that SIA110DJ-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIA110DJ-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIA110DJ-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIA110DJ-T1-GE3?

All SIA110DJ-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIA110DJ-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIA110DJ-T1-GE3 part is unused and in its original packaging.

Return procedure for SIA110DJ-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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