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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIA112LDJ-T1-GE3

Name: SIA112LDJ-T1-GE3
Brand: Vishay Siliconix
SKU: SIA112LDJ-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIA112LDJ-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SC-70-6

Datasheet:: SIA112LDJ-T1-GE3.pdf

Description:: N-CHANNEL 100-V (D-S) MOSFET POW

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Product details

Overview

SIA112LDJ-T1-GE3 from Vishay Siliconix is an N-channel 100 V, 8.8 A (T_C = 25 °C) TrenchFET® Gen IV power MOSFET in a PowerPAK® SC-70-6L package, with R_DS(on) = 0.119 Ω @ V_GS = 10 V and Q_g = 2.7 nC @ V_GS = 4.5 V, optimized for high-efficiency primary-side switching in DC/DC converters.

For engineers reviewing the SIA112LDJ-T1-GE3 datasheet, SIA112LDJ-T1-GE3 pinout, SIA112LDJ-T1-GE3 application, or SIA112LDJ-T1-GE3 equivalent, this device delivers low R_DS(on)–Q_oss figure-of-merit, 100% R_g and UIS tested reliability, and thermal performance validated up to +150 °C junction temperature - critical for compact, high-frequency power stages.

Technical Context

This MOSFET employs Vishay's TrenchFET® Gen IV process to achieve enhanced gate charge efficiency and reduced switching losses. Its low Q_gd (0.6 nC) and fast turn-off delay (15–30 ns @ V_GEN = 4.5 V) support high-frequency operation in synchronous buck and boost topologies.

The device integrates a robust body diode with t_rr = 22–44 ns and Q_rr = 25–50 nC, enabling reliable operation in hard-switched applications. Thermal design is supported by R_thJC = 6–8 °C/W (junction-to-case) and R_thJA = 32–43 °C/W (junction-to-ambient, t ≤ 10 s).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports primary-side switching in offline flyback and 48 V bus DC/DC converters without derating.
R_DS(on) max @ 10 V	0.119 Ω - enables <3.5 W conduction loss at 8.8 A, suitable for thermally constrained SC-70 layouts.
Q_g typ @ 4.5 V	2.7 nC - reduces gate drive power and allows use with low-current controllers in space-constrained designs.
I_D continuous @ T_C = 25 °C	8.8 A - rated for sustained current in PCB-mounted heatsinked configurations per FR4 board test conditions.
E_AS	1.8 mJ - provides single-pulse avalanche ruggedness for inductive load switching and transient overvoltage events.
R_thJC max	8 °C/W - confirms effective thermal path to PCB copper pour or thermal pad, critical for >1 W power dissipation.

Pinout & Package

PowerPAK® SC-70-6L is a leadless, surface-mount package with exposed drain paddle on bottom side. Dimensions: 2.05 mm × 2.05 mm × 0.95 mm. Thermal pad must be soldered to PCB for optimal R_thJC performance.

Pin/Terminal	Circuit Role	Design Meaning
1, 3, 4	Drain (D)	Three parallel drain terminals connected to internal die and exposed bottom paddle - primary current path and thermal conduction path.
2	Gate (G)	Control input with R_g = 0.3–2.8 Ω - low gate resistance minimizes ringing and simplifies RC snubber design.
5	Source (S)	Reference node for gate drive and current sensing; tied to source of internal MOSFET and body diode cathode.
6	Drain (D)	Fourth drain terminal - reinforces current handling and thermal spreading across package corners.

Key Features

Feature	Design Value
TrenchFET® Gen IV process	Delivers lowest R_DS(on)–Q_oss FOM among comparable 100 V SC-70 MOSFETs, reducing total switching loss.
100 % R_g and UIS tested	Ensures gate robustness against ESD and avalanche energy tolerance - no screening failures in production lots.
Body diode t_rr = 22–44 ns	Minimizes reverse recovery loss and cross-conduction risk in synchronous rectification and half-bridge configurations.
Exposed drain paddle	Enables direct thermal coupling to PCB ground plane, achieving R_thJC as low as 6 °C/W under optimal layout.

Applications

Primary Side Switch	DC/DC Converter
Use Scenario: High-voltage switch in isolated flyback converter operating from 48–100 V input rails. IC Role / Device Role / Timing Role: Primary-side power switch controlling energy transfer to secondary winding during ON-time. Use Value: 100 V V_DS rating and 1.8 mJ E_AS withstand capability ensure safe operation during output short-circuit transients.	Use Scenario: High-efficiency non-isolated buck converter for industrial I/O power supplies. IC Role / Device Role / Timing Role: Low-side synchronous rectifier or high-side switch in 300 kHz–1 MHz PWM stage. Use Value: 2.7 nC Q_g @ 4.5 V enables clean switching with low-power gate drivers, reducing driver IC cost and footprint.
Motor Drive Switch	LED Backlighting
Use Scenario: H-bridge half-bridge leg driving 24 V brushed DC motors in portable medical pumps. IC Role / Device Role / Timing Role: High-speed switching element with fast fall time (4–8 ns) and low R_DS(on) to minimize heat generation. Use Value: R_DS(on) = 0.135 Ω @ 4.5 V ensures <1.2 W conduction loss at 3 A motor stall current, supporting fanless enclosure design.	Use Scenario: Boost converter switch powering LED strings in automotive interior lighting modules. IC Role / Device Role / Timing Role: High-frequency switching transistor in 500 kHz boost topology with tight thermal constraints. Use Value: PowerPAK SC-70-6L footprint and 8.8 A rating allow single-device solution for 10–15 W LED loads without external heatsinking.

Primary Side Switch

DC/DC Converter

Use Scenario: High-voltage switch in isolated flyback converter operating from 48–100 V input rails.

IC Role / Device Role / Timing Role: Primary-side power switch controlling energy transfer to secondary winding during ON-time.

Use Value: 100 V V_DS rating and 1.8 mJ E_AS withstand capability ensure safe operation during output short-circuit transients.

Use Scenario: High-efficiency non-isolated buck converter for industrial I/O power supplies.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier or high-side switch in 300 kHz–1 MHz PWM stage.

Use Value: 2.7 nC Q_g @ 4.5 V enables clean switching with low-power gate drivers, reducing driver IC cost and footprint.

Motor Drive Switch

LED Backlighting

Use Scenario: H-bridge half-bridge leg driving 24 V brushed DC motors in portable medical pumps.

IC Role / Device Role / Timing Role: High-speed switching element with fast fall time (4–8 ns) and low R_DS(on) to minimize heat generation.

Use Value: R_DS(on) = 0.135 Ω @ 4.5 V ensures <1.2 W conduction loss at 3 A motor stall current, supporting fanless enclosure design.

Use Scenario: Boost converter switch powering LED strings in automotive interior lighting modules.

IC Role / Device Role / Timing Role: High-frequency switching transistor in 500 kHz boost topology with tight thermal constraints.

Use Value: PowerPAK SC-70-6L footprint and 8.8 A rating allow single-device solution for 10–15 W LED loads without external heatsinking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiA913DJ-T1-GE3	Lower V_DS (60 V), lower R_DS(on) (0.042 Ω @ 4.5 V), same PowerPAK SC-70-6L package.	Not suitable for >60 V bus applications; better for 12–24 V motor drives or battery-powered DC/DC.	Select only if system V_DS stress remains below 60 V - not a drop-in replacement for 100 V designs.
DMN3026LFG-7	Same V_DS (100 V), higher R_DS(on) (0.145 Ω @ 4.5 V), larger TSOP-6 package (3.05 mm × 1.65 mm).	Requires PCB layout change due to different footprint and thermal pad geometry; higher conduction loss.	Use when legacy TSOP-6 compatibility is required; verify thermal margin given higher R_DS(on) and larger R_thJA.

Compared with SiA913DJ-T1-GE3 and DMN3026LFG-7, the SIA112LDJ-T1-GE3 uniquely balances 100 V rating, SC-70 footprint, and sub-0.12 Ω R_DS(on), making it optimal for miniaturized 48–100 V power stages where board area and thermal density are limiting factors.

Availability

SIA112LDJ-T1-GE3 is available at Aetrix Electronics and suitable for primary-side switching, DC/DC conversion, and motor drive applications requiring stable component supply, consistent parametric performance, and long-term lifecycle support.

Supply support for SIA112LDJ-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SIA112LDJ-T1-GE3 belongs to Vishay's TrenchFET® Gen IV family, engineered specifically for high-frequency, high-density power conversion in space-constrained industrial and automotive subsystems.

FAQ

What is the maximum continuous drain current for SIA112LDJ-T1-GE3 at 70 °C case temperature?

The SIA112LDJ-T1-GE3 supports 7.0 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capacity at elevated case temperatures and must be verified against actual PCB layout and ambient conditions.

Does SIA112LDJ-T1-GE3 have avalanche rating, and what is its single-pulse capability?

Yes, the SIA112LDJ-T1-GE3 is rated for single-pulse avalanche energy (E_AS) of 1.8 mJ and single-pulse avalanche current (I_AS) of 6 A with L = 0.1 mH. These values are production-tested and guarantee ruggedness against inductive switching transients in real-world power circuits.

What is the gate-source threshold voltage range for SIA112LDJ-T1-GE3, and how does it vary with temperature?

The SIA112LDJ-T1-GE3 has a V_GS(th) range of 1.0 V to 2.5 V at T_J = 25 °C, with a negative temperature coefficient of −4.6 mV/°C. This means threshold voltage decreases as junction temperature rises, which must be accounted for in gate drive design to avoid unintended turn-on.

Can SIA112LDJ-T1-GE3 be used in synchronous rectification applications?

Yes, the SIA112LDJ-T1-GE3 is suitable for synchronous rectification due to its low R_DS(on) (0.135 Ω @ 4.5 V), fast body diode recovery (t_rr = 22–44 ns), and low Q_rr (25–50 nC). Its performance supports efficient replacement of Schottky diodes in 100 V-class forward and LLC resonant converters.

What is the recommended rework method for SIA112LDJ-T1-GE3 given its leadless PowerPAK SC-70-6L package?

Vishay explicitly advises against manual soldering with a soldering iron for the SIA112LDJ-T1-GE3 due to its leadless construction. Recommended rework uses controlled hot-air systems with profile matching the JEDEC J-STD-020 standard and peak temperature ≤260 °C, ensuring uniform heating of the thermal paddle and all terminals.

SIA112LDJ-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SC-70-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 3.5A (Ta), 8.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 14mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 11.8 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 355 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 2.9W (Ta), 15.6W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SC-70-6

SIA112LDJ-T1-GE3 FAQ

1.How can I place an order for SIA112LDJ-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIA112LDJ-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIA112LDJ-T1-GE3 reliable?

The price and inventory of SIA112LDJ-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIA112LDJ-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIA112LDJ-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIA112LDJ-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIA112LDJ-T1-GE3?

SIA112LDJ-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIA112LDJ-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIA112LDJ-T1-GE3?

For technical support, including SIA112LDJ-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIA112LDJ-T1-GE3 requirements.

6.How does Aetrix verify that SIA112LDJ-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIA112LDJ-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIA112LDJ-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIA112LDJ-T1-GE3?

All SIA112LDJ-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIA112LDJ-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIA112LDJ-T1-GE3 part is unused and in its original packaging.

Return procedure for SIA112LDJ-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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