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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIA415DJ-T1-GE3

Name: SIA415DJ-T1-GE3
Brand: Vishay Siliconix
SKU: SIA415DJ-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIA415DJ-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SC-70-6

Datasheet:: SIA415DJ-T1-GE3.pdf

Description:: MOSFET P-CH 20V 12A PPAK SC70-6

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Product details

Overview

SIA415DJ-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET in PowerPAK® SC-70-6L package, rated for -20 V drain-source voltage, 0.035 Ω R_DS(on) at V_GS = -4.5 V, and -12 A continuous drain current at T_C = 25 °C. It serves as a compact, low-loss load switch in portable device power management circuits.

For engineers reviewing the SIA415DJ-T1-GE3 datasheet, SIA415DJ-T1-GE3 pinout, SIA415DJ-T1-GE3 application, or SIA415DJ-T1-GE3 equivalent, key selection criteria include its thermally enhanced leadless package, gate threshold of -0.6 to -1.5 V, body diode recovery time (35–55 ns), and suitability for battery-switching duty cycles with <300 μs pulse width.

Technical Context

This MOSFET employs TrenchFET® technology to achieve low on-resistance and fast switching in a 2.05 mm × 2.05 mm footprint. Its gate charge profile (Q_g = 15 nC typ. at V_GS = -4.5 V) supports efficient drive from low-voltage logic controllers.

The device features an integrated source-drain body diode with V_SD = -0.8 to -1.2 V at -6.7 A and reverse recovery charge Q_rr = 21–35 nC, enabling bidirectional current handling in compact DC-DC and load-switch topologies without external diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - Maximum blocking voltage for battery-side switching in 3.3 V/5 V systems
R_DS(on) max @ V_GS = -4.5 V	0.035 Ω - Enables ≤190 mW conduction loss at 8.4 A, critical for thermal budget in portable PCBs
I_D continuous @ T_C = 25 °C	-12 A - Supports high-current load switching without external heatsink under case-cooled conditions
Q_g typ. @ V_GS = -4.5 V	15 nC - Matches standard GPIO or PMIC gate drivers with ≤10 mA peak output capability
R_thJC max	6.5 °C/W - Confirms effective thermal path from junction to exposed drain pad for board-level heat spreading
V_GS(th)	-0.6 to -1.5 V - Ensures reliable turn-on with 1.8 V or 2.5 V logic-level control signals
t_rr	35–55 ns - Limits switching losses and EMI during fast load disconnect in USB-C PD and power bank designs

Pinout & Package

PowerPAK® SC-70-6L is a leadless, surface-mount package with exposed drain pad on bottom side for thermal and electrical connection. Dimensions: 2.05 mm × 2.05 mm × 0.85 mm.

Pin/Terminal	Circuit Role	Design Meaning
1, 3, 4, 5	Drain (D)	Internally connected to exposed copper pad; primary current path and thermal conduction path to PCB
2	Gate (G)	Control terminal requiring ≤±12 V rating; low input capacitance (C_iss = 1250 pF) eases drive design
6, 7	Source (S)	Return path for load current; dual pins reduce resistance and inductance in high-di/dt switching

Key Features

Feature	Design Value
TrenchFET® process	Delivers 30% lower R_DS(on) vs. planar P-channel MOSFETs in same SC-70 footprint, reducing board area and thermal stress
Thermally enhanced PowerPAK SC-70	Exposed drain pad enables 5.3 °C/W junction-to-case thermal resistance-critical for sustained 8.4 A operation on 1" × 1" FR4
Low gate threshold range	V_GS(th) = -0.6 to -1.5 V ensures full enhancement with 1.8 V I/O rails, eliminating level-shifter requirement in ultra-low-power systems
Fast body diode recovery	t_rr = 35–55 ns and Q_rr = 21–35 nC minimize shoot-through risk and ringing in synchronous buck or OR-ing configurations
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's Green Standard (doc. 99912), supporting eco-conscious consumer electronics manufacturing

Applications

Smartphone Battery Protection	USB-C Power Delivery Switch
Use Scenario: Isolating main Li-ion battery from system rail during charging or fault conditions in slim smartphones. IC Role / Device Role / Timing Role: High-side load switch controlling battery discharge path with <300 μs response to protection IC signals. Use Value: 0.035 Ω R_DS(on) limits voltage drop to <300 mV at 8.4 A, preserving runtime and enabling accurate fuel gauging.	Use Scenario: Enabling/disabling VBUS path between USB-C port and internal 5 V/9 V/15 V rails in portable chargers and docks. IC Role / Device Role / Timing Role: Bidirectional power switch managing source/sink direction with integrated body diode for reverse current blocking. Use Value: 35–55 ns t_rr prevents cross-conduction during PD contract renegotiation, ensuring safe voltage transition between PDOs.
Wireless Earbud Charging Case	Wearable Health Monitor Power Gating
Use Scenario: Disconnecting charging circuitry from battery when case lid closes or battery reaches full charge. IC Role / Device Role / Timing Role: Low-quiescent-load battery switch activated by hall-effect sensor or MCU GPIO. Use Value: -0.6 to -1.5 V V_GS(th) allows direct drive from 1.8 V microcontroller outputs, eliminating external bias components.	Use Scenario: Powering down ECG/PPG sensor subsystems between measurement intervals to extend battery life in clinical-grade wearables. IC Role / Device Role / Timing Role: Ultra-low-leakage power gate with IDSS ≤ -1 μA at -20 V, minimizing standby current drain. Use Value: 100 nA IGSS maximum ensures <100 nA gate leakage, contributing <0.1 μA to total system sleep current budget.

Smartphone Battery Protection

USB-C Power Delivery Switch

Use Scenario: Isolating main Li-ion battery from system rail during charging or fault conditions in slim smartphones.

IC Role / Device Role / Timing Role: High-side load switch controlling battery discharge path with <300 μs response to protection IC signals.

Use Value: 0.035 Ω R_DS(on) limits voltage drop to <300 mV at 8.4 A, preserving runtime and enabling accurate fuel gauging.

Use Scenario: Enabling/disabling VBUS path between USB-C port and internal 5 V/9 V/15 V rails in portable chargers and docks.

IC Role / Device Role / Timing Role: Bidirectional power switch managing source/sink direction with integrated body diode for reverse current blocking.

Use Value: 35–55 ns t_rr prevents cross-conduction during PD contract renegotiation, ensuring safe voltage transition between PDOs.

Wireless Earbud Charging Case

Wearable Health Monitor Power Gating

Use Scenario: Disconnecting charging circuitry from battery when case lid closes or battery reaches full charge.

IC Role / Device Role / Timing Role: Low-quiescent-load battery switch activated by hall-effect sensor or MCU GPIO.

Use Value: -0.6 to -1.5 V V_GS(th) allows direct drive from 1.8 V microcontroller outputs, eliminating external bias components.

Use Scenario: Powering down ECG/PPG sensor subsystems between measurement intervals to extend battery life in clinical-grade wearables.

IC Role / Device Role / Timing Role: Ultra-low-leakage power gate with IDSS ≤ -1 μA at -20 V, minimizing standby current drain.

Use Value: 100 nA IGSS maximum ensures <100 nA gate leakage, contributing <0.1 μA to total system sleep current budget.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiA403DJ-T1-GE3	R_DS(on) = 0.055 Ω @ -4.5 V; higher threshold (-0.8 to -2.0 V); same PowerPAK SC-70-6L package	Lower current rating (-8.4 A vs. -12 A); better suited for <5 A portable loads with tighter gate drive margin	Select when gate drive voltage exceeds 2.5 V and thermal headroom is constrained by lower R_DS(on) tolerance
DMN2013LFG-7	R_DS(on) = 0.032 Ω @ -4.5 V; 6-pin SOT-23 package; higher Q_g (22 nC); no exposed drain pad	Higher thermal resistance (R_thJA = 150 °C/W vs. 36 °C/W); requires larger copper area for equivalent current handling	Choose only if existing SOT-23 layout prohibits SC-70 rework and gate driver can supply >15 nC without slew rate limitation

Compared with SiA403DJ-T1-GE3 and DMN2013LFG-7, the SIA415DJ-T1-GE3 delivers superior thermal performance via its exposed drain pad and lowest R_DS(on) among SC-70 P-channel devices, making it optimal for space-constrained, high-current portable power switches where board-level heat spreading is feasible.

Availability

SIA415DJ-T1-GE3 is available at Aetrix Electronics and suitable for smartphone battery protection, USB-C power delivery switching, and wearable health monitor power gating requiring stable component supply across high-mix, low-volume production runs.

Supply support for SIA415DJ-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and miniaturization.

The SIA415DJ-T1-GE3 belongs to Vishay's TrenchFET® PowerPAK® SC-70 family, engineered specifically for high-density portable electronics where low R_DS(on), fast switching, and minimal PCB footprint are mandatory.

FAQ

What is the maximum continuous drain current for SIA415DJ-T1-GE3 at 70 °C case temperature?

The SIA415DJ-T1-GE3 supports -12 A continuous drain current at T_C = 70 °C per the Absolute Maximum Ratings table. This rating assumes proper PCB copper area for thermal conduction and is validated under steady-state conditions with the exposed drain pad soldered to ≥1 in² of 2-oz copper.

Does SIA415DJ-T1-GE3 require a gate resistor for typical 1.8 V GPIO drive?

No external gate resistor is required for 1.8 V GPIO drive of the SIA415DJ-T1-GE3, as its V_GS(th) range (-0.6 to -1.5 V) ensures full enhancement. However, a 10–47 Ω series resistor is recommended to dampen potential gate oscillation during fast edge transitions in noisy environments.

Can SIA415DJ-T1-GE3 be used in reverse polarity protection circuits?

Yes, the SIA415DJ-T1-GE3 is suitable for reverse polarity protection due to its P-channel configuration and low R_DS(on). When placed in the high-side position with source tied to input and drain to load, it blocks reverse current while maintaining <300 mV drop at rated current, provided V_IN ≥ |V_GS(th)| + V_OUT.

What is the thermal resistance from junction to ambient for SIA415DJ-T1-GE3 on a 1" × 1" FR4 board?

On a 1" × 1" FR4 board, the SIA415DJ-T1-GE3 has a maximum R_thJA of 36 °C/W (typical 28 °C/W) per the Thermal Resistance Ratings table. This value assumes surface mounting per Vishay's recommended solder profile and excludes forced airflow or additional heatsinking.

Is the body diode of SIA415DJ-T1-GE3 suitable for synchronous rectification?

The body diode of the SIA415DJ-T1-GE3 is not optimized for synchronous rectification due to its relatively high forward voltage (-0.8 to -1.2 V) and moderate recovery speed (35–55 ns). It is intended for freewheeling and fault-current paths-not primary conduction-so external Schottky diodes or actively driven N-channel counterparts are preferred for high-efficiency synchronous designs.

SIA415DJ-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SC-70-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 35mOhm @ 5.6A, 4.5V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 47 nC @ 10 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 1250 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 3.5W (Ta), 19W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SC-70-6

SIA415DJ-T1-GE3 FAQ

1.How can I place an order for SIA415DJ-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIA415DJ-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIA415DJ-T1-GE3 reliable?

The price and inventory of SIA415DJ-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIA415DJ-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIA415DJ-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIA415DJ-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIA415DJ-T1-GE3?

SIA415DJ-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIA415DJ-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIA415DJ-T1-GE3?

For technical support, including SIA415DJ-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIA415DJ-T1-GE3 requirements.

6.How does Aetrix verify that SIA415DJ-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIA415DJ-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIA415DJ-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIA415DJ-T1-GE3?

All SIA415DJ-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIA415DJ-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIA415DJ-T1-GE3 part is unused and in its original packaging.

Return procedure for SIA415DJ-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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