My Inquiry
My Account
Vishay Siliconix SIA418DJ-T1-GE3
- Part No.:
- SIA418DJ-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SC-70-6
- Datasheet:
-
SIA418DJ-T1-GE3.pdf
- Description:
- MOSFET N-CH 30V 12A PPAK SC70-6
- Quantity:
- Payment:
- Shipping:
Inventory:7,274
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SIA418DJ-T1-GE3 from Vishay Siliconix is an N-channel 30 V (D-S) TrenchFET® Power MOSFET in a PowerPAK® SC-70-6L package, delivering 12 A continuous drain current at TJ = 150 °C, RDS(on) = 0.018 Ω at VGS = 10 V, and Qg = 5 nC (typ.) - optimized for high-efficiency synchronous buck converters and DC/DC power stages.
For engineers reviewing the SIA418DJ-T1-GE3 datasheet, SIA418DJ-T1-GE3 pinout, SIA418DJ-T1-GE3 application, or SIA418DJ-T1-GE3 equivalent, key selection criteria include low gate charge for fast switching, 30 V VDS rating for 24 V input rails, thermal performance on FR4 (RthJA = 36 °C/W max), and Pb-free/halogen-free compliance per JEDEC JS709A.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low RDS(on) and fast switching dynamics. Its 5 nC typical total gate charge (at VGS = 4.5 V) enables efficient operation in high-frequency synchronous rectification, while the 0.85 V body diode forward voltage (VSD) at IS = 10 A supports low-loss freewheeling in buck topologies.
The device features 100 % Rg testing for gate resistance consistency and operates across -55 °C to +150 °C junction temperature range. Thermal design is supported by specified RthJC = 6.5 °C/W (max) and RthJA = 36 °C/W (max) under standard 1" × 1" FR4 mounting conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - supports 24 V nominal input rails with margin for transient spikes in industrial and telecom DC/DC converters |
| RDS(on) (max) | 0.022 Ω at VGS = 4.5 V - enables low conduction loss in 3.3 V–5 V gate drive applications |
| ID (cont) | 12 A at TC = 25 °C - rated for high-current synchronous FET positions in compact power modules |
| Qg (typ) | 5 nC at VGS = 4.5 V - reduces driver power loss and enables >1 MHz switching in space-constrained designs |
| VGS(th) | 1.2–2.4 V - ensures reliable turn-on with standard logic-level gate drivers (e.g., 3.3 V or 5 V microcontrollers) |
| VSD | 0.85–1.2 V at IS = 10 A - minimizes reverse recovery loss during dead-time conduction in buck converters |
| RthJA (max) | 36 °C/W - defines thermal derating limit for surface-mount operation on standard FR4 PCBs without heatsink |
Pinout & Package
Package: PowerPAK® SC-70-6L-Single - leadless, thermally enhanced 2.05 mm × 2.05 mm footprint with exposed drain paddle for improved heat dissipation and low-inductance layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Drain (D) | Four parallel drain terminals connected to internal die paddle - provide low-resistance current path and primary thermal conduction path to PCB copper |
| 5 | Gate (G) | Single gate input - requires <2.4 V threshold for full enhancement; low Ciss (570 pF) eases gate driver sizing |
| 6 | Source (S) | Source terminal - forms return path for load current and reference node for gate drive; tied to power ground in buck low-side configuration |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® architecture | Enables 0.018 Ω RDS(on) at 10 V and 0.022 Ω at 4.5 V in ultra-small SC-70 package - balances conduction loss and size for portable power |
| 100 % Rg tested | Guarantees gate resistance ≤ 2 Ω - ensures consistent turn-on timing and prevents driver overcurrent in parallel configurations |
| Low Qgd/Qg ratio | Qgd = 1.6 nC / Qg = 5 nC → 32 % - improves hard-switching robustness and reduces Miller-induced shoot-through risk |
| Body diode trr | 20–40 ns - enables clean commutation in synchronous rectification without external Schottky clamp |
| Pb-free & halogen-free | Complies with JEDEC JS709A - meets RoHS and environmental requirements for consumer, industrial, and automotive-qualified designs |
Applications
| Server VRM Output Stage | USB-C PD Portable Charger |
|---|---|
|
Use Scenario: High-density 12 V input → 1.0 V/60 A output VRM using multiphase synchronous buck topology. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET - conducts during bottom switch interval with precise gate timing controlled by PWM controller. Use Value: 0.022 Ω RDS(on) at 4.5 V gate drive minimizes conduction loss; 5 nC Qg allows >800 kHz operation without excessive driver loss. |
Use Scenario: 20 V USB-C PD input → 5 V/3 A output DC/DC converter in credit-card-sized portable charger. IC Role / Device Role / Timing Role: Primary switching FET in monolithic or controller-based buck regulator - handles peak currents up to 12 A during transient loads. Use Value: 2.05 mm × 2.05 mm PowerPAK SC-70-6L footprint saves board area; low VGS(th) ensures full enhancement from 3.3 V controller outputs. |
| Industrial PLC I/O Module | Automotive ADAS Camera Power Supply |
|
Use Scenario: 24 V rail → 3.3 V/2 A isolated or non-isolated supply powering microcontroller and analog front-end in DIN-rail mounted PLC. IC Role / Device Role / Timing Role: High-efficiency buck converter power switch - operates continuously at ambient temperatures up to 70 °C. Use Value: RthJA = 36 °C/W enables stable thermal performance on standard FR4; -55 °C to +150 °C rating supports extended industrial temperature range. |
Use Scenario: Compact 12 V automotive battery → 1.8 V/1.5 A core supply for image signal processor (ISP) in rear-view camera module. IC Role / Device Role / Timing Role: Synchronous rectifier in point-of-load (POL) buck regulator - switches at 2 MHz to minimize EMI and filter size. Use Value: Fast turn-off (tf = 10–20 ns) and low Qgd reduce switching loss and improve light-load efficiency critical for always-on camera systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiA403DJ-T1-GE3 | RDS(on) = 0.028 Ω @ 4.5 V; Qg = 4.5 nC; same PowerPAK SC-70-6L package | Higher conduction loss but slightly lower gate charge - better suited for ultra-high-frequency (>2 MHz) apps where switching loss dominates | Select when prioritizing minimal Qg over RDS(on); verify thermal margin given higher on-resistance |
| DMN3028LSD-13 | RDS(on) = 0.025 Ω @ 4.5 V; SO-8 package; higher RthJA (~62 °C/W); no 100 % Rg test | Larger footprint and inferior thermal performance - requires more PCB area and heatsinking for equivalent current handling | Choose only if SO-8 compatibility is mandatory; expect ~30 % higher junction temperature at same ID |
Compared with SiA403DJ-T1-GE3 and DMN3028LSD-13, the SIA418DJ-T1-GE3 offers the best balance of low RDS(on), low Qg, and thermal performance in the smallest footprint - making it optimal for space- and efficiency-critical 30 V synchronous buck designs.
Availability
SIA418DJ-T1-GE3 is available at Aetrix Electronics and suitable for server VRMs, USB-C PD chargers, and industrial PLC power supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for SIA418DJ-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power management and signal conditioning.
The SIA418DJ-T1-GE3 belongs to Vishay's TrenchFET® Power MOSFET family, engineered specifically for high-efficiency, high-frequency DC/DC conversion in space-constrained applications such as computing, communications, and portable electronics.
FAQ
What is the maximum continuous drain current rating for SIA418DJ-T1-GE3 at 70 °C case temperature?
The SIA418DJ-T1-GE3 supports 12 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area for thermal conduction and is limited by package power dissipation (PD = 12 W at TC = 70 °C). Derating applies above this temperature per the Current Derating curve on page 5 of the datasheet.
Does SIA418DJ-T1-GE3 support 3.3 V gate drive in logic-level applications?
Yes, the SIA418DJ-T1-GE3 has a gate threshold voltage (VGS(th)) of 1.2–2.4 V and delivers RDS(on) = 0.022 Ω at VGS = 4.5 V - fully compatible with 3.3 V logic-level gate drivers. For optimal performance, ensure gate drive can source ≥1 A peak current to charge its 5 nC gate charge within required switching times.
What is the thermal resistance from junction to ambient (RthJA) for SIA418DJ-T1-GE3 under standard mounting conditions?
The SIA418DJ-T1-GE3 has a maximum RthJA of 36 °C/W when mounted on a 1" × 1" FR4 board with standard solder profile, as stated in the Thermal Resistance Ratings table. The typical value is 28 °C/W. This value assumes no additional heatsinking and defines the upper bound for thermal design in compact layouts.
Is SIA418DJ-T1-GE3 suitable for synchronous rectification in buck converters?
Yes, the SIA418DJ-T1-GE3 is explicitly designed for synchronous buck applications, as confirmed by Vishay's Applications section and electrical characteristics. Its low RDS(on), fast switching (tf = 10–20 ns), and low Qgd reduce shoot-through risk and conduction losses - enabling high efficiency (>95 %) in 24 V input → 1–5 V output stages.
What does the "-GE3" suffix indicate in SIA418DJ-T1-GE3?
The "-GE3" suffix denotes Vishay's green, lead (Pb)-free, and halogen-free packaging standard compliant with JEDEC JS709A. It confirms that the SIA418DJ-T1-GE3 uses matte tin plating and environmentally compliant materials - meeting RoHS Directive 2011/65/EU and supporting sustainable manufacturing requirements.
SIA418DJ-T1-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SC-70-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 18mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 17 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 570 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.5W (Ta), 19W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SC-70-6
SIA418DJ-T1-GE3 FAQ
1.How can I place an order for SIA418DJ-T1-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIA418DJ-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIA418DJ-T1-GE3 reliable?
The price and inventory of SIA418DJ-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIA418DJ-T1-GE3 is usually 5 days.
3.What payment methods are accepted for SIA418DJ-T1-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIA418DJ-T1-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIA418DJ-T1-GE3?
SIA418DJ-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIA418DJ-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIA418DJ-T1-GE3?
For technical support, including SIA418DJ-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIA418DJ-T1-GE3 requirements.
6.How does Aetrix verify that SIA418DJ-T1-GE3 is sourced from the original manufacturer or authorized distributors?
All SIA418DJ-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIA418DJ-T1-GE3 meets industry standards.
7.What is the process for return or replacement of SIA418DJ-T1-GE3?
All SIA418DJ-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIA418DJ-T1-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIA418DJ-T1-GE3 part is unused and in its original packaging.
Return procedure for SIA418DJ-T1-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SIA418DJ-T1-GE3 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
