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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIA421DJ-T1-GE3

Name: SIA421DJ-T1-GE3
Brand: Vishay Siliconix
SKU: SIA421DJ-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIA421DJ-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SC-70-6

Datasheet:: SIA421DJ-T1-GE3.pdf

Description:: MOSFET P-CH 30V 12A PPAK SC70-6

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Product details

Overview

SIA421DJ-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode MOSFET in PowerPAK® SC-70-6L package, rated for -30 V V_DS, 0.035 Ω R_DS(on) at V_GS = -10 V, and -12 A continuous drain current at T_C = 25 °C. It serves as a high-efficiency load switch or synchronous rectifier in portable power management and DC-DC conversion circuits.

For engineers reviewing the SIA421DJ-T1-GE3 datasheet, SIA421DJ-T1-GE3 pinout, SIA421DJ-T1-GE3 application, or SIA421DJ-T1-GE3 equivalent, key selection criteria include its low gate charge (10 nC at V_GS = -4.5 V), thermally enhanced leadless package, and guaranteed -30 V breakdown voltage under transient conditions.

Technical Context

This MOSFET uses TrenchFET® technology to achieve low on-resistance and fast switching with minimal gate drive requirements. Its gate threshold voltage of -1.5 V to -3.0 V enables direct interfacing with 3.3 V and 4.5 V logic controllers without level shifting.

The PowerPAK SC-70-6L package features exposed drain pads on the bottom side for thermal conduction, with R_thJC = 5.3 °C/W (typ.) and R_thJA = 28 °C/W (typ.) on a 1" × 1" FR4 board - enabling compact, high-current switching in space-constrained portable designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum drain-source blocking voltage; supports 24 V rail systems with margin against transients.
R_DS(on)	0.035 Ω at V_GS = -10 V - Enables ≤ 2.2 W conduction loss at 10 A, critical for thermal budget in handheld devices.
I_D (cont.)	-12 A at T_C = 25 °C - Supports high-side load switching in battery-powered buck converters up to ~15 W output.
Q_g	10 nC at V_GS = -4.5 V - Reduces gate driver power and switching losses in 1–3 MHz DC-DC applications.
V_GS(th)	-1.5 to -3.0 V - Ensures reliable turn-on with standard 3.3 V GPIO or PMIC control signals.
C_iss	950 pF - Low input capacitance minimizes Miller effect and improves stability in high-frequency switching nodes.
V_SD	-0.8 to -1.2 V - Body diode forward voltage impacts reverse recovery loss in synchronous rectification mode.

Pinout & Package

Package: PowerPAK® SC-70-6L - thermally enhanced, leadless surface-mount package with 2.05 mm × 2.05 mm footprint and exposed drain terminals on bottom side for PCB heat sinking.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts -4.5 V to -10 V drive for full enhancement; low C_iss reduces drive power.
2 (S)	Source	Reference node for gate drive; tied to system ground or high-side return path in load-switch configurations.
3 (D)	Drain	Main current path; internally connected to exposed copper pad on package underside for thermal conduction.
4 (D)	Drain	Second drain connection; paralleled with Pin 3 to reduce package inductance and improve current sharing.
5 (D)	Drain	Third drain connection; enhances thermal dissipation and current capacity across the die-to-PCB interface.
6 (S)	Source	Redundant source terminal; improves bond wire reliability and reduces source inductance in high-dI/dt switching.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 30 % lower R_DS(on) vs. planar P-channel MOSFETs at same die size, improving power density in portable designs.
PowerPAK SC-70-6L package	Provides 2× better thermal performance than standard SC-70, enabling -12 A operation without external heatsink.
Low Q_g/Q_gd ratio	Q_gd = 4.5 nC / Q_g = 10 nC at -4.5 V - ensures clean, controllable turn-off with minimal shoot-through risk in half-bridge topologies.
Specified body diode t_rr	20–30 ns reverse recovery time - supports efficient synchronous rectification in 500 kHz–2 MHz buck converters.
Lead (Pb)-free & Halogen-free	Complies with RoHS 2011/65/EU and JEDEC JS709C; suitable for consumer and medical portable equipment.

Applications

Portable Load Switch	Buck Converter High-Side Switch
Use Scenario: Power sequencing and battery isolation in smartphones, tablets, and wearables. IC Role / Device Role / Timing Role: High-side P-channel load switch controlled by baseband processor GPIO. Use Value: 0.035 Ω R_DS(on) limits voltage drop to < 35 mV at 1 A, preserving battery runtime and system voltage stability.	Use Scenario: Upper switch in non-synchronous buck regulators powering SoCs or PMICs. IC Role / Device Role / Timing Role: Main power switch operating at 500 kHz–1 MHz with fixed 10–20 ns dead-time. Use Value: 10 nC total gate charge reduces driver loss and allows use of low-cost integrated gate drivers.
Synchronous Rectifier	USB-C Power Delivery Switch
Use Scenario: Secondary-side rectification in isolated DC-DC converters for USB PD adapters. IC Role / Device Role / Timing Role: Synchronous rectifier driven by transformer-coupled timing signal or controller IC. Use Value: 20–30 ns body diode t_rr and low V_SD minimize reverse recovery loss and conduction loss simultaneously.	Use Scenario: Input protection and VBUS path control in USB-C receptacles supporting 20 V/5 A. IC Role / Device Role / Timing Role: Reverse-polarity and overcurrent protected high-side switch in VBUS path. Use Value: -30 V V_DS rating accommodates 20 V PD profiles with 50 % safety margin against surge events.

Portable Load Switch

Buck Converter High-Side Switch

Use Scenario: Power sequencing and battery isolation in smartphones, tablets, and wearables.

IC Role / Device Role / Timing Role: High-side P-channel load switch controlled by baseband processor GPIO.

Use Value: 0.035 Ω R_DS(on) limits voltage drop to < 35 mV at 1 A, preserving battery runtime and system voltage stability.

Use Scenario: Upper switch in non-synchronous buck regulators powering SoCs or PMICs.

IC Role / Device Role / Timing Role: Main power switch operating at 500 kHz–1 MHz with fixed 10–20 ns dead-time.

Use Value: 10 nC total gate charge reduces driver loss and allows use of low-cost integrated gate drivers.

Synchronous Rectifier

USB-C Power Delivery Switch

Use Scenario: Secondary-side rectification in isolated DC-DC converters for USB PD adapters.

IC Role / Device Role / Timing Role: Synchronous rectifier driven by transformer-coupled timing signal or controller IC.

Use Value: 20–30 ns body diode t_rr and low V_SD minimize reverse recovery loss and conduction loss simultaneously.

Use Scenario: Input protection and VBUS path control in USB-C receptacles supporting 20 V/5 A.

IC Role / Device Role / Timing Role: Reverse-polarity and overcurrent protected high-side switch in VBUS path.

Use Value: -30 V V_DS rating accommodates 20 V PD profiles with 50 % safety margin against surge events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiA403DJ-T1-GE3	V_DS = -20 V, R_DS(on) = 0.022 Ω @ -4.5 V, smaller 1.6 mm × 1.6 mm footprint	Limited to ≤ 12 V input rails; unsuitable for 24 V industrial or USB PD 20 V operation	Select when board space is critical and voltage stress remains below 15 V.
DMN3026LSD-13	V_DS = -30 V, R_DS(on) = 0.042 Ω @ -4.5 V, SO-8 package with higher R_thJA = 62 °C/W	Larger footprint and inferior thermal performance; requires larger copper pour or heatsink for same current	Choose only if SO-8 compatibility or dual-N/P channel pairing is required in legacy designs.

Compared with SiA403DJ-T1-GE3 and DMN3026LSD-13, the SIA421DJ-T1-GE3 uniquely balances -30 V rating, 0.035 Ω on-resistance at logic-level drive, and PowerPAK SC-70 thermal efficiency - making it optimal for next-gen portable power switches where voltage margin, loss, and size are co-constrained.

Availability

SIA421DJ-T1-GE3 is available at Aetrix Electronics and suitable for portable load switching, buck converter high-side switching, and USB-C power delivery applications requiring stable component supply, RoHS-compliant sourcing, and consistent thermal performance across production batches.

Supply support for SIA421DJ-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The SiA421DJ series belongs to Vishay's TrenchFET® PowerPAK® portfolio, designed specifically for space- and thermally constrained portable power management, where low R_DS(on), fast switching, and logic-level gate drive are essential.

FAQ

What is the maximum continuous drain current for SIA421DJ-T1-GE3 at 70 °C case temperature?

The SIA421DJ-T1-GE3 supports -12 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating reflects derating due to thermal resistance and is validated under steady-state conditions with proper PCB copper area per Vishay's recommended layout for PowerPAK SC-70-6L. The SIA421DJ-T1-GE3 maintains this current capability without forced airflow or external heatsinking.

Does SIA421DJ-T1-GE3 support 3.3 V logic-level gate drive?

Yes, the SIA421DJ-T1-GE3 has a gate threshold voltage range of -1.5 V to -3.0 V and delivers 0.056 Ω R_DS(on) at V_GS = -4.5 V, confirming robust enhancement with 3.3 V logic (V_GS ≈ -3.3 V). Its low Q_g of 10 nC further ensures fast, low-loss switching when driven directly from microcontroller GPIO pins - a key feature of the SIA421DJ-T1-GE3 design.

What is the thermal resistance from junction to ambient for SIA421DJ-T1-GE3 on a standard PCB?

The typical junction-to-ambient thermal resistance (R_thJA) for SIA421DJ-T1-GE3 is 28 °C/W when mounted on a 1" × 1" FR4 board with 1 oz copper, per Vishay's test conditions in Document 73975. This value assumes no additional heatsinking and is measured with t ≤ 5 s pulse; the maximum R_thJA is 36 °C/W. The SIA421DJ-T1-GE3 achieves this via its exposed drain pad and optimized PowerPAK SC-70-6L layout.

Is SIA421DJ-T1-GE3 suitable for synchronous rectification in DC-DC converters?

Yes, the SIA421DJ-T1-GE3 is qualified for synchronous rectification with a body diode reverse recovery time (t_rr) of 20–30 ns and Q_rr of 15–30 nC at I_F = -6.3 A. Its low V_SD (-0.8 to -1.2 V) and fast turn-off characteristics enable high efficiency in buck and flyback topologies operating up to 2 MHz. These parameters are explicitly characterized and guaranteed for the SIA421DJ-T1-GE3 in the datasheet.

What is the marking code for SIA421DJ-T1-GE3 on the package?

The top-side marking for SIA421DJ-T1-GE3 is "BJX", as shown in the package drawing and confirmed in Vishay's ordering information section. This three-character code identifies the device variant and is laser-etched on the PowerPAK SC-70-6L package surface adjacent to the orientation notch. The SIA421DJ-T1-GE3 marking is distinct from other variants like SiA421DJ-T4-GE3, which shares the same die but differs in reel packaging.

SIA421DJ-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SC-70-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 35mOhm @ 5.3A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 29 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 950 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.5W (Ta), 19W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SC-70-6

SIA421DJ-T1-GE3 FAQ

1.How can I place an order for SIA421DJ-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIA421DJ-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIA421DJ-T1-GE3 reliable?

The price and inventory of SIA421DJ-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIA421DJ-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIA421DJ-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIA421DJ-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIA421DJ-T1-GE3?

SIA421DJ-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIA421DJ-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIA421DJ-T1-GE3?

For technical support, including SIA421DJ-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIA421DJ-T1-GE3 requirements.

6.How does Aetrix verify that SIA421DJ-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIA421DJ-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIA421DJ-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIA421DJ-T1-GE3?

All SIA421DJ-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIA421DJ-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIA421DJ-T1-GE3 part is unused and in its original packaging.

Return procedure for SIA421DJ-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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