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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIA425EDJ-T1-GE3

Name: SIA425EDJ-T1-GE3
Brand: Vishay Siliconix
SKU: SIA425EDJ-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIA425EDJ-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SC-70-6

Datasheet:: SIA425EDJ-T1-GE3.pdf

Description:: MOSFET P-CH 20V 4.5A PPAK SC70-6

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Product details

Overview

SIA425EDJ-T1-GE3 from Vishay Siliconix is a P-channel enhancement-mode TrenchFET® MOSFET in PowerPAK SC-70-6L package, rated for -20 V drain-source voltage, 0.060 Ω R_DS(on) at V_GS = -4.5 V, and -4.5 A continuous drain current at T_C = 25 °C. It serves as a compact, low-R_DS(on) load switch in portable battery-powered systems.

For engineers reviewing the SIA425EDJ-T1-GE3 datasheet, SIA425EDJ-T1-GE3 pinout, SIA425EDJ-T1-GE3 application, or SIA425EDJ-T1-GE3 equivalent, key selection criteria include its thermally enhanced SC-70 footprint, guaranteed 100% R_g test, ±12 V gate rating, -1.0 V typical V_GS(th), and 2.4 A ambient-rated continuous current at T_A = 70 °C.

Technical Context

This device operates as a single P-channel power switch with gate-controlled conduction between source and drain terminals. Its trench-based silicon structure delivers low on-resistance and fast switching (t_d(on) = 0.5–2.4 µs, t_f = 10–20 µs) under -4.5 V or -10 V gate drive, with body diode recovery time (t_rr) of 20–40 ns and Q_rr = 11–20 nC.

The PowerPAK SC-70-6L package features exposed drain copper on the bottom side for thermal conduction, with maximum junction-to-ambient thermal resistance of 43 °C/W (t ≤ 5 s) and junction-to-case (drain) of 8 °C/W under steady state - enabling efficient heat transfer in space-constrained PCB layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - Maximum reverse-blocking capability for battery-switch applications up to 20 V system rails.
R_DS(on)	0.060 Ω @ V_GS = -4.5 V - Enables <150 mW conduction loss at 4.5 A, critical for portable device efficiency.
I_D (continuous)	-4.5 A @ T_C = 25 °C - Supports high-side load switching with minimal derating in thermally managed designs.
Q_g	4.9 nC (typ.) - Low gate charge enables fast turn-on with minimal driver power and reduced switching losses.
V_GS(th)	-0.4 to -1.0 V - Ensures reliable turn-on with standard logic-level negative gate drive (e.g., from microcontroller GPIO).
t_rr	20–40 ns - Fast body diode recovery minimizes shoot-through risk in synchronous or bidirectional switching topologies.
P_D	2.9 W @ T_A = 25 °C - Ambient-limited power dissipation defines usable current in non-heatsinked surface-mount layouts.

Pinout & Package

Package: PowerPAK SC-70-6L-Single - 2.05 mm × 2.05 mm leadless surface-mount package with exposed drain pad on bottom side for thermal conduction; no leads protrude beyond package outline.

Pin/Terminal	Circuit Role	Design Meaning
1 (S)	Source	Main current return path; tied to system ground or battery negative in high-side switch configurations.
2 (S)	Source	Second source connection - paralleled internally or externally to reduce source inductance and improve current sharing.
3 (G)	Gate	Control terminal; requires negative voltage relative to source to turn on; 100% R_g tested for consistency.
4 (D)	Drain	Main power output node; electrically connected to exposed bottom copper pad for thermal and electrical conduction.
5 (D)	Drain	Second drain connection - bonded to same internal die region as Pin 4; used for current distribution and thermal spreading.
6 (D)	Drain	Third drain connection - completes low-inductance, low-resistance path from die to PCB copper pour.

Key Features

Feature	Design Value
TrenchFET® technology	Enables 0.060 Ω R_DS(on) in SC-70 footprint - achieves performance previously requiring larger packages like SO-8 or PowerPAK 1212.
Thermally enhanced PowerPAK SC-70	Exposed drain pad reduces R_thJC to 6–8 °C/W - allows 15.6 W power dissipation at case temperature, doubling thermal capability vs. standard SC-70.
100 % R_g tested	Guarantees gate resistance between 1.2 kΩ and 12 kΩ - ensures predictable switching speed and driver compatibility across production lots.
ESD protection	2400 V HBM - protects against handling damage during assembly without requiring external ESD safeguards.
Halogen-free & RoHS-compliant	Meets IEC 61249-2-21 and Directive 2002/95/EC - supports environmental compliance for consumer and medical portable devices.

Applications

Smartphone Battery Protection	Wireless Headset Power Management
Use Scenario: Isolates main Li-ion battery from charging circuitry and system loads during fault conditions or deep sleep. IC Role / Device Role / Timing Role: P-channel high-side load switch controlled by battery management IC or PMIC enable signal. Use Value: 0.060 Ω R_DS(on) limits voltage drop to <270 mV at 4.5 A, preserving battery runtime and enabling accurate fuel gauging.	Use Scenario: Enables/disables power to Bluetooth radio, audio codec, and sensors in true wireless stereo (TWS) earbuds. IC Role / Device Role / Timing Role: Low-quiescent-current load switch activated by baseband processor GPIO with logic-level negative drive. Use Value: -1.0 V typical V_GS(th) ensures full enhancement at -1.8 V gate drive, supporting ultra-low-voltage operation down to 1.8 V supply rails.
USB-C Port Power Switching	Portable Medical Sensor Hub
Use Scenario: Controls V_BUS delivery to USB-C receptacle while supporting reversible plug orientation detection. IC Role / Device Role / Timing Role: Bidirectional P-channel switch placed between source and sink paths, leveraging integrated body diode for reverse current path. Use Value: 20–40 ns t_rr and 11–20 nC Q_rr minimize reverse recovery losses during hot-swap events and cable insertion/removal transients.	Use Scenario: Powers clinical-grade analog front-end (AFE), ADC, and wireless transmitter only during active measurement cycles. IC Role / Device Role / Timing Role: Precision on/off control element in low-noise, low-leakage power domain isolation network. Use Value: -1 µA I_DSS at -20 V and -10 µA at 55 °C ensures <10 ppm standby current error in microampere-level sensor biasing circuits.

Smartphone Battery Protection

Wireless Headset Power Management

Use Scenario: Isolates main Li-ion battery from charging circuitry and system loads during fault conditions or deep sleep.

IC Role / Device Role / Timing Role: P-channel high-side load switch controlled by battery management IC or PMIC enable signal.

Use Value: 0.060 Ω R_DS(on) limits voltage drop to <270 mV at 4.5 A, preserving battery runtime and enabling accurate fuel gauging.

Use Scenario: Enables/disables power to Bluetooth radio, audio codec, and sensors in true wireless stereo (TWS) earbuds.

IC Role / Device Role / Timing Role: Low-quiescent-current load switch activated by baseband processor GPIO with logic-level negative drive.

Use Value: -1.0 V typical V_GS(th) ensures full enhancement at -1.8 V gate drive, supporting ultra-low-voltage operation down to 1.8 V supply rails.

USB-C Port Power Switching

Portable Medical Sensor Hub

Use Scenario: Controls V_BUS delivery to USB-C receptacle while supporting reversible plug orientation detection.

IC Role / Device Role / Timing Role: Bidirectional P-channel switch placed between source and sink paths, leveraging integrated body diode for reverse current path.

Use Value: 20–40 ns t_rr and 11–20 nC Q_rr minimize reverse recovery losses during hot-swap events and cable insertion/removal transients.

Use Scenario: Powers clinical-grade analog front-end (AFE), ADC, and wireless transmitter only during active measurement cycles.

IC Role / Device Role / Timing Role: Precision on/off control element in low-noise, low-leakage power domain isolation network.

Use Value: -1 µA I_DSS at -20 V and -10 µA at 55 °C ensures <10 ppm standby current error in microampere-level sensor biasing circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiA403EDJ-T1-GE3	R_DS(on) = 0.035 Ω @ -4.5 V; higher -6.5 A I_D; same PowerPAK SC-70-6L package	Supports higher current loads but draws more gate charge (6.2 nC); requires stronger driver	Select when lower conduction loss is prioritized over gate drive strength and board space is constrained.
DMN2020LFG-7	R_DS(on) = 0.055 Ω @ -4.5 V; SOT-23-6 package; 1.6 mm × 1.6 mm footprint	Smaller footprint but higher R_thJA (60 °C/W); limited to 1.5 W ambient power dissipation	Select when PCB area is extremely limited and thermal budget permits lower power handling.

Compared with SiA403EDJ-T1-GE3 and DMN2020LFG-7, the SIA425EDJ-T1-GE3 balances moderate R_DS(on), proven thermal performance in SC-70, and robust gate threshold for logic-compatible drive - making it optimal for mid-power portable load switching where reliability and ease of drive matter most.

Availability

SIA425EDJ-T1-GE3 is available at Aetrix Electronics and suitable for smartphone battery protection, wireless headset power management, and USB-C port power switching requiring stable component supply, consistent parametric performance, and long-term lifecycle support.

Supply support for SIA425EDJ-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The SiA425EDJ product line delivers compact, high-performance P-channel TrenchFET® MOSFETs optimized for battery-powered portable electronics where space, thermal management, and low-voltage gate drive are critical design constraints.

FAQ

What is the maximum continuous drain current for SIA425EDJ-T1-GE3 at 70 °C ambient temperature?

The SIA425EDJ-T1-GE3 supports -2.4 A continuous source-drain current at T_A = 70 °C, as specified in the Absolute Maximum Ratings table. This value reflects ambient-limited conduction under standard JEDEC test conditions (1" × 1" FR4 board), and is derived from its 1.8 W ambient power dissipation rating at that temperature. Designers must verify PCB copper area and airflow to sustain this current reliably in end equipment.

Does SIA425EDJ-T1-GE3 require a negative gate voltage to operate, and what is its typical threshold range?

Yes, the SIA425EDJ-T1-GE3 is a P-channel MOSFET and requires a gate voltage lower than the source to turn on. Its gate-source threshold voltage (V_GS(th)) is specified from -0.4 V to -1.0 V at I_D = -250 µA. This means the SIA425EDJ-T1-GE3 fully enhances with gate drives as low as -1.8 V relative to source, enabling direct interface with 1.8 V or 2.5 V logic outputs without level shifting.

Can SIA425EDJ-T1-GE3 be used in synchronous rectification applications?

No, the SIA425EDJ-T1-GE3 is not recommended for synchronous rectification due to its relatively high R_DS(on) temperature coefficient and lack of specified reverse recovery optimization for high-frequency freewheeling. Its body diode t_rr (20–40 ns) and Q_rr (11–20 nC) are suitable for load switching but not for MHz-range DC/DC converter secondary-side rectification where faster, lower-Q_rr devices are required.

What is the thermal resistance from junction to ambient for SIA425EDJ-T1-GE3 under short-duration pulse conditions?

Under short-duration pulse conditions (t ≤ 5 s), the SIA425EDJ-T1-GE3 has a maximum junction-to-ambient thermal resistance (R_thJA) of 43 °C/W, as stated in the Thermal Resistance Ratings table. This value applies to surface mounting on a 1" × 1" FR4 board and is used to estimate transient temperature rise during pulsed operation - such as inrush limiting or intermittent load switching - before steady-state equilibrium is reached.

Is SIA425EDJ-T1-GE3 compatible with lead-free reflow soldering processes?

Yes, the SIA425EDJ-T1-GE3 is qualified for lead-free reflow soldering with a peak temperature of 260 °C, per the Soldering Recommendations note in the datasheet. It is marked "Lead (Pb)-free and Halogen-free" in its ordering information, and the PowerPAK SC-70 package is designed for compatibility with standard JEDEC J-STD-020 profiles. Manual soldering with an iron is not recommended due to its leadless construction.

SIA425EDJ-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SC-70-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 60mOhm @ 4.2A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 2.9W (Ta), 15.6W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SC-70-6

SIA425EDJ-T1-GE3 FAQ

1.How can I place an order for SIA425EDJ-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIA425EDJ-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIA425EDJ-T1-GE3 reliable?

The price and inventory of SIA425EDJ-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIA425EDJ-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIA425EDJ-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIA425EDJ-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIA425EDJ-T1-GE3?

SIA425EDJ-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIA425EDJ-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIA425EDJ-T1-GE3?

For technical support, including SIA425EDJ-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIA425EDJ-T1-GE3 requirements.

6.How does Aetrix verify that SIA425EDJ-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIA425EDJ-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIA425EDJ-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIA425EDJ-T1-GE3?

All SIA425EDJ-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIA425EDJ-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIA425EDJ-T1-GE3 part is unused and in its original packaging.

Return procedure for SIA425EDJ-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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