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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIA426DJ-T1-GE3

Name: SIA426DJ-T1-GE3
Brand: Vishay Siliconix
SKU: SIA426DJ-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIA426DJ-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SC-70-6

Datasheet:: SIA426DJ-T1-GE3.pdf

Description:: MOSFET N-CH 20V 4.5A PPAK SC70-6

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Product details

Overview

SIA426DJ-T1-GE3 from Vishay Siliconix is a N-channel 20-V TrenchFET® Power MOSFET in PowerPAK® SC-70-6L package, delivering R_DS(on) = 0.0236 Ω at V_GS = 10 V, 4.5-A continuous drain current (T_J = 150 °C), and 7.9-nC total gate charge - optimized for compact load-switching applications in space-constrained DC/DC and battery-powered systems.

For engineers reviewing the SIA426DJ-T1-GE3 datasheet, SIA426DJ-T1-GE3 pinout, SIA426DJ-T1-GE3 application, or SIA426DJ-T1-GE3 equivalent, key selection criteria include low R_DS(on) at 4.5 V drive, thermally enhanced SC-70 footprint, 100% R_g tested gate resistance, and halogen-free RoHS-compliant construction.

Technical Context

This device uses trench-gate silicon technology to achieve low on-resistance with fast switching performance: t_d(on) = 7 ns (V_GEN = 10 V), t_f = 8 ns, and Q_gd/Q_g ratio of ~6.3%, supporting high-efficiency synchronous rectification and PWM-controlled power paths. Its 20-V V_DS rating and 1.5-V maximum V_GS(th) enable direct interfacing with 3.3-V and 5-V logic controllers.

The PowerPAK SC-70-6L package features exposed drain pads on both top and bottom for dual-side thermal dissipation, achieving R_thJC = 5.3 °C/W (typ.) and R_thJA = 28 °C/W (t ≤ 5 s), making it suitable for thermally dense portable electronics where board area and junction temperature rise are critical constraints.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - supports input rails up to 18 V with 10% margin; compatible with USB PD, Li-ion battery, and 12-V industrial bus systems.
R_DS(on) @ V_GS = 4.5 V	0.0263 Ω - enables <130 mW conduction loss at 4.5 A, reducing thermal stress in always-on load switches.
I_D (continuous)	4.5 A @ T_C = 25 °C - package-limited current handling; sufficient for USB-C port power delivery and e-fuse circuits.
Q_g (total)	7.9 nC @ V_GS = 4.5 V - low gate charge minimizes driver power and enables efficient operation with low-power microcontrollers.
V_GS(th)	0.6–1.5 V - ensures reliable turn-on with 3.3-V GPIOs without level-shifting; avoids unintended conduction near 0 V.
R_thJA	28 °C/W (t ≤ 5 s) - allows 3.5 W power dissipation on standard FR4; supports short-duration peak loads in portable devices.
Body diode V_SD	0.8–1.2 V @ I_S = 7.9 A - low forward voltage reduces reverse recovery losses in bidirectional current paths.

Pinout & Package

PowerPAK® SC-70-6L is a leadless surface-mount package measuring 2.05 mm × 2.05 mm × 0.75 mm, with dual-side thermal pads and six terminals arranged in single-row configuration. The exposed drain terminals (Pins 1, 2, 3, 4) provide low-inductance, high-current paths and enhanced heat transfer to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Drain (D)	Common high-current output node; electrically and thermally tied to internal MOSFET die drain; requires large copper pour for thermal management.
5	Gate (G)	Control input; low capacitance (C_iss = 1020 pF) enables fast edge rates with minimal driver strength; 100% R_g tested.
6	Source (S)	Reference node for gate drive and current sensing; connects to system ground or low-side return path; forms body diode anode.

Key Features

Feature	Design Value
TrenchFET® technology	Enables 0.0236 Ω R_DS(on) at 10 V in ultra-small SC-70 footprint - 40% lower on-resistance than comparable SOT-23-6 MOSFETs.
Thermally enhanced PowerPAK SC-70-6L	Dual-side drain exposure reduces R_thJC to 5.3 °C/W, allowing 19 W power dissipation at case temperature - double typical SC-70 limits.
100% R_g tested	Guarantees gate resistance between 0.6–6 Ω, ensuring consistent switching timing and EMI behavior across production lots.
Halogen-free & RoHS-compliant	Meets IPC-4101D/21 and JEDEC J-STD-020D reflow profiles; qualified for lead-free assembly up to 260 °C peak temperature.
Low V_GS(th) distribution	0.6–1.5 V threshold ensures robust turn-on with 3.3-V logic while preventing false triggering during power-up/down sequences.

Applications

USB-C Port Power Switching	Li-ion Battery Protection Circuit
Use Scenario: Controlling power delivery to downstream USB-C peripherals with dynamic voltage/current negotiation. IC Role / Device Role / Timing Role: Low-side load switch enabling/disabling VBUS path under MCU control; handles up to 3 A continuous current. Use Value: 0.0263 Ω R_DS(on) at 4.5 V drive keeps voltage drop below 80 mV at full load, preserving USB-C spec compliance.	Use Scenario: Isolating battery cell from charging/discharging circuitry during overcurrent or overtemperature fault conditions. IC Role / Device Role / Timing Role: Primary protection FET in integrated battery management IC (BMS) secondary protection path. Use Value: Fast 8 ns fall time and low Q_gd ensure sub-100-ns fault response, limiting energy dissipation during short-circuit events.
Always-On System Rail Switch	Low-Power IoT Sensor Node Power Gating
Use Scenario: Enabling/disabling auxiliary 3.3-V rail for Bluetooth/Wi-Fi modules in sleep/wake cycles. IC Role / Device Role / Timing Role: High-efficiency, low-quiescent-load power switch controlled by PMIC or microcontroller GPIO. Use Value: 100 nA max I_GSS and 1 µA I_DSS minimize leakage-induced battery drain during multi-week standby periods.	Use Scenario: Power gating discrete sensors (e.g., environmental, motion) to extend coin-cell battery life beyond 5 years. IC Role / Device Role / Timing Role: Ultra-low-I_Q load switch activated only during sensor sampling intervals. Use Value: 0.6 V min V_GS(th) ensures clean turn-on with weak-sourcing MCU pins; no external pull-up required.

USB-C Port Power Switching

Li-ion Battery Protection Circuit

Use Scenario: Controlling power delivery to downstream USB-C peripherals with dynamic voltage/current negotiation.

IC Role / Device Role / Timing Role: Low-side load switch enabling/disabling VBUS path under MCU control; handles up to 3 A continuous current.

Use Value: 0.0263 Ω R_DS(on) at 4.5 V drive keeps voltage drop below 80 mV at full load, preserving USB-C spec compliance.

Use Scenario: Isolating battery cell from charging/discharging circuitry during overcurrent or overtemperature fault conditions.

IC Role / Device Role / Timing Role: Primary protection FET in integrated battery management IC (BMS) secondary protection path.

Use Value: Fast 8 ns fall time and low Q_gd ensure sub-100-ns fault response, limiting energy dissipation during short-circuit events.

Always-On System Rail Switch

Low-Power IoT Sensor Node Power Gating

Use Scenario: Enabling/disabling auxiliary 3.3-V rail for Bluetooth/Wi-Fi modules in sleep/wake cycles.

IC Role / Device Role / Timing Role: High-efficiency, low-quiescent-load power switch controlled by PMIC or microcontroller GPIO.

Use Value: 100 nA max I_GSS and 1 µA I_DSS minimize leakage-induced battery drain during multi-week standby periods.

Use Scenario: Power gating discrete sensors (e.g., environmental, motion) to extend coin-cell battery life beyond 5 years.

IC Role / Device Role / Timing Role: Ultra-low-I_Q load switch activated only during sensor sampling intervals.

Use Value: 0.6 V min V_GS(th) ensures clean turn-on with weak-sourcing MCU pins; no external pull-up required.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiA403DJ-T1-GE3	R_DS(on) = 0.015 Ω @ 10 V but higher Q_g = 11.5 nC; same PowerPAK SC-70-6L package.	Better conduction efficiency at high V_GS, but slower switching and higher driver demand.	Choose SiA403DJ-T1-GE3 when minimizing steady-state loss outweighs switching speed requirements.
DMN2023LFG-7	20-V N-channel in SOT-23-6; R_DS(on) = 0.032 Ω @ 4.5 V; larger 2.9 mm × 2.8 mm footprint; R_thJA = 125 °C/W.	Lower cost but significantly worse thermal performance and higher on-resistance.	Choose DMN2023LFG-7 only if board space permits larger package and thermal derating is acceptable.

Compared with SiA403DJ-T1-GE3 and DMN2023LFG-7, the SIA426DJ-T1-GE3 strikes optimal balance between low R_DS(on), fast switching, and thermal capability in minimal area - making it preferred for space- and thermally constrained portable designs requiring <5 ns turn-off latency and <100 mW conduction loss.

Availability

SIA426DJ-T1-GE3 is available at Aetrix Electronics and suitable for USB-C power delivery, battery protection, always-on rail switching, and low-power IoT sensor node applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for SIA426DJ-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, reliability, and miniaturization.

The SIA426DJ-T1-GE3 belongs to Vishay's TrenchFET® Power MOSFET family designed specifically for high-density DC/DC conversion, load switching, and battery management in portable and wearable electronics.

FAQ

What is the maximum continuous drain current for SIA426DJ-T1-GE3 at 70 °C case temperature?

The SIA426DJ-T1-GE3 supports 4.5 A continuous drain current at T_C = 70 °C, as specified in its Absolute Maximum Ratings table. This value is package-limited and remains unchanged from the 25 °C rating due to the thermal design of the PowerPAK SC-70-6L package. Derating begins above 70 °C per the current derating curve in Figure 5 of the datasheet.

Does SIA426DJ-T1-GE3 support 3.3-V logic-level gate drive?

Yes, the SIA426DJ-T1-GE3 is fully compatible with 3.3-V logic-level gate drive: its V_GS(th) range (0.6–1.5 V) ensures strong turn-on, and R_DS(on) = 0.0263 Ω at V_GS = 4.5 V confirms robust conduction even with marginal overdrive. At exactly 3.3 V, R_DS(on) rises to ~0.032 Ω - still suitable for most load-switch applications below 3 A.

What is the thermal resistance from junction to ambient for SIA426DJ-T1-GE3 under standard mounting conditions?

The SIA426DJ-T1-GE3 has a typical junction-to-ambient thermal resistance (R_thJA) of 28 °C/W for t ≤ 5 s under standard surface-mount conditions on a 1" × 1" FR4 board, as measured per JEDEC JESD51-2. For continuous operation, the maximum R_thJA is 36 °C/W. These values assume recommended pad layout per Application Note 826.

Is SIA426DJ-T1-GE3 pin-compatible with other PowerPAK SC-70-6L MOSFETs?

Yes, the SIA426DJ-T1-GE3 shares identical PowerPAK SC-70-6L mechanical dimensions and pinout (Drain-Drain-Drain-Drain-Gate-Source) with all Vishay devices in this package family, including SiA403DJ-T1-GE3 and SiA413DJ-T1-GE3. Layout reuse is supported, though electrical parameters (R_DS(on), Q_g, V_GS(th)) differ and must be verified per application.

What is the body diode reverse recovery time (t_rr) for SIA426DJ-T1-GE3?

The SIA426DJ-T1-GE3 exhibits a typical body diode reverse recovery time (t_rr) of 16 ns under test conditions of I_F = 7.9 A, dI/dt = 100 A/µs, and T_J = 25 °C. This fast recovery characteristic minimizes switching losses in synchronous rectifier and bidirectional current applications.

SIA426DJ-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SC-70-6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 10V

Rds On (Max) @ Id, Vgs:: 23.6mOhm @ 9.9A, 10V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 10 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 1020 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 3.5W (Ta), 19W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SC-70-6

SIA426DJ-T1-GE3 FAQ

1.How can I place an order for SIA426DJ-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIA426DJ-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIA426DJ-T1-GE3 reliable?

The price and inventory of SIA426DJ-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIA426DJ-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SIA426DJ-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIA426DJ-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIA426DJ-T1-GE3?

SIA426DJ-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIA426DJ-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIA426DJ-T1-GE3?

For technical support, including SIA426DJ-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIA426DJ-T1-GE3 requirements.

6.How does Aetrix verify that SIA426DJ-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SIA426DJ-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIA426DJ-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SIA426DJ-T1-GE3?

All SIA426DJ-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIA426DJ-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIA426DJ-T1-GE3 part is unused and in its original packaging.

Return procedure for SIA426DJ-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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