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Vishay Siliconix SIA430DJ-T4-GE3
- Part No.:
- SIA430DJ-T4-GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- PowerPAK® SC-70-6
- Datasheet:
-
SIA430DJ-T4-GE3.pdf
- Description:
- MOSFET N-CH 20V 12A/12A PPAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,091
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Product details
Overview
SIA430DJ-T4-GE3 from Vishay Siliconix is an N-channel 20 V (D-S) TrenchFET® Power MOSFET in a thermally enhanced PowerPAK® SC-70 package, with RDS(on) = 0.0135 Ω at VGS = 10 V, 12 A continuous drain current at TC = 25 °C, and 5.3 nC total gate charge - optimized for high-efficiency load switching in space-constrained DC/DC and battery-powered systems.
For engineers reviewing the SIA430DJ-T4-GE3 datasheet, SIA430DJ-T4-GE3 pinout, SIA430DJ-T4-GE3 application, or SIA430DJ-T4-GE3 equivalent, key selection criteria include its low on-resistance at 4.5 V gate drive, compact leadless SC-70 footprint, junction-to-case thermal resistance of 5.3 °C/W, and guaranteed 12 A continuous current capability under case-cooled conditions.
Technical Context
This device uses trench-gate silicon technology to achieve low RDS(on) and fast switching with Qg = 5.3 nC (at VGS = 4.5 V), enabling efficient operation in high-frequency synchronous buck converters and hot-swap circuits. Its gate threshold voltage (1–3 V) ensures compatibility with 3.3 V and 5 V logic-level drivers.
The PowerPAK SC-70-6L package features exposed drain pads on the bottom side for direct thermal coupling to PCB copper, delivering RthJC = 5.3 °C/W (typical) and supporting 19.2 W power dissipation at TC = 25 °C - critical for thermally dense portable and IoT power rails.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - supports input rails up to 18 V with 10 % margin; suitable for USB PD, Li-ion battery (≤4S), and 12 V industrial bus applications. |
| RDS(on) @ 10 V | 0.0135 Ω - delivers ≤0.95 W conduction loss at 10 A, reducing thermal stress in compact layouts. |
| RDS(on) @ 4.5 V | 0.0185 Ω - enables full enhancement from standard 3.3 V GPIO or logic-level controllers without level-shifting. |
| ID (continuous) | 12 A @ TC = 25 °C - usable in high-current load switches where heatsinking is applied to the drain pad. |
| Qg | 5.3 nC @ VGS = 4.5 V - minimizes driver power and switching losses in 500 kHz–1 MHz DC/DC topologies. |
| RthJC | 5.3 °C/W - allows precise junction temperature estimation when mounted on ≥1 in² copper area, supporting thermal-aware design. |
| VGS(th) | 1–3 V - ensures reliable turn-on with standard microcontroller outputs and avoids unintended activation near ground. |
Pinout & Package
PowerPAK® SC-70-6L is a leadless, surface-mount package with dimensions 2.05 mm × 2.05 mm × 0.75 mm (L × W × H), featuring three drain terminals (pins 1, 2, 3), one gate (pin 4), and two source terminals (pins 5, 6) - optimized for low-inductance, high-current routing and thermal transfer via bottom-side copper exposure.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 (D) | Drain | Three parallel drain connections tied internally; must be soldered to large PCB copper pour for thermal and current handling. |
| 4 (G) | Gate | Single control terminal; requires <10 Ω series resistor to suppress ringing due to low Ciss = 800 pF and fast dV/dt. |
| 5, 6 (S) | Source | Two source terminals providing low-impedance return path; connect directly to ground plane for minimal loop inductance. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchFET® silicon process | Enables 0.0135 Ω RDS(on) at 10 V in SC-70, outperforming planar MOSFETs by >30 % in same footprint. |
| Thermally enhanced PowerPAK SC-70 | Exposes drain metal on bottom side for direct PCB thermal conduction, achieving RthJC = 5.3 °C/W - 2× better than standard SC-70. |
| Logic-level gate drive | Guaranteed turn-on at VGS = 4.5 V with RDS(on) ≤ 0.0185 Ω, eliminating need for gate drivers in MCU-controlled loads. |
| Low gate charge | Qg = 5.3 nC at 4.5 V reduces switching energy and EMI in high-frequency (>500 kHz) power stages. |
| RoHS-compliant, halogen-free | Meets IPC-J-STD-609A Class 1 for bromine/chlorine content and EU RoHS Directive 2011/65/EU Annex II limits. |
Applications
| Battery Protection Circuit | USB Type-C Power Delivery Switch |
|---|---|
Use Scenario: Bidirectional overvoltage/overcurrent protection in single-cell to 4-cell Li-ion battery packs with integrated fuel gauging. IC Role / Device Role / Timing Role: High-side load switch controlling battery discharge path; operates in linear mode during fault limiting and fully enhanced during normal operation. Use Value: 0.0185 Ω RDS(on) at 4.5 V gate drive minimizes voltage drop across protection FET, preserving battery runtime and enabling accurate coulomb counting. | Use Scenario: 5–20 V bidirectional power path switching in USB-C DRP (dual-role port) implementations for laptops and docking stations. IC Role / Device Role / Timing Role: Low-side or high-side power switch enabling VCONN and VBUS path control with <100 ns turn-off for fault isolation. Use Value: 12 A continuous rating and 40 A pulsed capability support USB PD 3.0 PPS profiles up to 60 W, while low Qg ensures clean transitions during role swaps. |
| IoT Sensor Node Power Gating | Industrial PLC Digital Output Driver |
Use Scenario: Selective power gating of BLE/Wi-Fi modules, MEMS sensors, and ADCs in ultra-low-power edge nodes operating from coin cells or energy harvesters. IC Role / Device Role / Timing Role: Ultra-low-leakage (IDSS ≤ 1 µA) high-side switch enabling sub-µA sleep current and rapid wake-up response. Use Value: VGS(th) = 1–3 V ensures robust turn-on from 1.8 V or 3.3 V supply rails, while 0.0135 Ω RDS(on) prevents measurable voltage sag during sensor burst sampling. | Use Scenario: 24 V DC digital output stage driving solenoids, relays, and indicator LEDs in DIN-rail mounted programmable logic controllers. IC Role / Device Role / Timing Role: Robust load switch with integrated body diode (VSD = 0.8–1.2 V) for inductive kickback clamping and fast recovery (trr = 18–30 ns). Use Value: 20 V VDS rating with 12 A continuous current handles 24 V/10 W loads; RthJC = 5.3 °C/W allows sustained operation without external heatsink when mounted on 2 oz copper. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiA440DJ-T4-GE3 | RDS(on) = 0.0095 Ω @ 10 V; higher 14 A ID; same PowerPAK SC-70-6L package. | Lower conduction loss at high current; identical pinout and footprint. | Select when <0.5 W conduction loss at 12 A is required and layout allows same SC-70 placement. |
| DMN2020LSD-13 | RDS(on) = 0.022 Ω @ 4.5 V; SO-8 package; higher RthJA = 62 °C/W. | Larger footprint and lower thermal performance; suited for less space-constrained boards. | Choose when board real estate permits SO-8 and legacy qualification requirements mandate Diodes Inc. sourcing. |
Compared with SiA440DJ-T4-GE3, the SIA430DJ-T4-GE3 trades 0.004 Ω higher RDS(on) for tighter VGS(th) distribution (1–3 V vs. 1.2–3.5 V), improving consistency in low-voltage logic-driven systems; versus DMN2020LSD-13, it delivers 2.8× lower RthJC and 40 % smaller footprint - critical for wearable and modular industrial designs.
Availability
SIA430DJ-T4-GE3 is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery modules, IoT sensor node power gating, and industrial PLC digital output stages requiring stable component supply, Pb-free/halogen-free compliance, and consistent thermal performance across production lots.
Supply support for SIA430DJ-T4-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and resistive components with emphasis on power efficiency, reliability, and miniaturization.
The SiA430DJ product line targets high-density power management in portable, automotive, and industrial applications - designed specifically for low-voltage, high-current load switching where thermal performance and gate-drive simplicity are critical.
FAQ
What is the maximum continuous drain current for SIA430DJ-T4-GE3 at 70 °C case temperature?
The SIA430DJ-T4-GE3 supports 12 A continuous drain current at TC = 70 °C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB thermal design with ≥1 in² of 2 oz copper connected to the drain pads, and reflects derating from the 12 A value at 25 °C due to thermal resistance limitations.
Does SIA430DJ-T4-GE3 require a gate driver when controlled by a 3.3 V microcontroller?
No, the SIA430DJ-T4-GE3 does not require an external gate driver when driven by a 3.3 V microcontroller. Its VGS(th) range of 1–3 V and RDS(on) = 0.0185 Ω at VGS = 4.5 V ensure full enhancement from 3.3 V logic, and the low Qg of 5.3 nC minimizes switching losses without added complexity.
How is thermal performance of SIA430DJ-T4-GE3 validated in the datasheet?
Thermal performance of the SIA430DJ-T4-GE3 is validated via measured RthJC = 5.3 °C/W (typical) and RthJA = 28 °C/W (typical, t ≤ 5 s) on a 1" × 1" FR4 board. The datasheet includes normalized thermal transient impedance curves and safe operating area (SOA) plots confirming 19.2 W power dissipation capability at TC = 25 °C.
Can SIA430DJ-T4-GE3 be used in reverse conduction (source-to-drain) applications?
Yes, the SIA430DJ-T4-GE3 supports reverse conduction via its intrinsic body diode, rated for 12 A continuous source-drain current at TC = 25 °C and 40 A pulsed. VSD = 0.8–1.2 V at IS = 5 A and trr = 18–30 ns enable use in synchronous rectification and bidirectional power paths where controlled reverse current is needed.
What is the lead finish and termination plating specification for SIA430DJ-T4-GE3?
The SIA430DJ-T4-GE3 features a matte tin (Sn) lead finish over copper substrate, compliant with J-STD-020 moisture sensitivity level 1 (unlimited floor life at ≤30 °C/85 % RH) and qualified to JEDEC JESD22-A110 thermal shock testing. The "-GE3" suffix confirms Pb-free and halogen-free construction per IPC-J-STD-609A Class 1.
SIA430DJ-T4-GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- PowerPAK® SC-70-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Ta), 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 13.5mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 800 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.5W (Ta), 19.2W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerPAK® SC-70-6
SIA430DJ-T4-GE3 FAQ
1.How can I place an order for SIA430DJ-T4-GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SIA430DJ-T4-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SIA430DJ-T4-GE3 reliable?
The price and inventory of SIA430DJ-T4-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIA430DJ-T4-GE3 is usually 5 days.
3.What payment methods are accepted for SIA430DJ-T4-GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIA430DJ-T4-GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SIA430DJ-T4-GE3?
SIA430DJ-T4-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SIA430DJ-T4-GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SIA430DJ-T4-GE3?
For technical support, including SIA430DJ-T4-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIA430DJ-T4-GE3 requirements.
6.How does Aetrix verify that SIA430DJ-T4-GE3 is sourced from the original manufacturer or authorized distributors?
All SIA430DJ-T4-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIA430DJ-T4-GE3 meets industry standards.
7.What is the process for return or replacement of SIA430DJ-T4-GE3?
All SIA430DJ-T4-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIA430DJ-T4-GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SIA430DJ-T4-GE3 part is unused and in its original packaging.
Return procedure for SIA430DJ-T4-GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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