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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SIA430DJT-T4-GE3

Name: SIA430DJT-T4-GE3
Brand: Vishay Siliconix
SKU: SIA430DJT-T4-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SIA430DJT-T4-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: PowerPAK® SC-70-6

Datasheet:: SIA430DJT-T4-GE3.pdf

Description:: MOSFET N-CH 20V 12A/12A PPAK

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Product details

Overview

SIA430DJT-T4-GE3 from Vishay Siliconix is an N-channel 20 V TrenchFET® power MOSFET in a thermally enhanced Thin PowerPAK® SC-70-6L package, delivering R_DS(on) = 13.5 mΩ at V_GS = 10 V and 18.5 mΩ at V_GS = 4.5 V, with 12 A continuous drain current and 5.3 nC total gate charge - optimized for high-efficiency load switching in space-constrained DC/DC converters.

For engineers reviewing the SIA430DJT-T4-GE3 datasheet, SIA430DJT-T4-GE3 pinout, SIA430DJT-T4-GE3 application, or SIA430DJT-T4-GE3 equivalent, key selection criteria include its ultra-thin 0.6 mm profile, 100% R_g tested gate resistance, bottom-side thermal pad design, and validated performance under 100 μs pulsed conditions up to 40 A.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance with fast switching dynamics: t_d(on) = 10 ns (V_GEN = 10 V), t_f = 8 ns, and Q_gd = 1.4 nC - enabling high-frequency synchronous rectification. Its gate threshold voltage (V_GS(th)) ranges from 1 V to 3 V, supporting direct logic-level drive from 3.3 V and 5 V controllers.

The device integrates a robust body diode with V_SD = 0.8–1.2 V at I_S = 5 A and t_rr = 18–30 ns, making it suitable for freewheeling paths in buck converters. Thermal design is enabled by R_thJC = 5.3 °C/W (max) and R_thJA = 28–36 °C/W (t ≤ 5 s), with junction-to-case conduction through the exposed copper drain paddle.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - maximum blocking voltage compatible with 12 V input rails and transient margin
R_DS(on) @ V_GS = 10 V	13.5 mΩ - enables <150 mW conduction loss at 10 A, critical for portable power stages
R_DS(on) @ V_GS = 4.5 V	18.5 mΩ - ensures reliable turn-on with standard 5 V microcontroller GPIO or PWM drivers
I_D (continuous, T_C = 25 °C)	12 A - supports high-current load switching without external heatsinking
Q_g (V_GS = 4.5 V)	5.3 nC - reduces gate drive power and enables >1 MHz switching in compact DC/DC designs
R_thJC	5.3 °C/W (typical) - allows direct thermal coupling to PCB copper pour for efficient heat extraction
Package	Thin PowerPAK® SC-70-6L - 2.05 × 2.05 mm footprint, 0.6 mm height, leadless with exposed drain paddle

Pinout & Package

Thin PowerPAK® SC-70-6L is a surface-mount, leadless package with an exposed copper drain paddle on the bottom side for thermal and electrical connection. The top-side terminals are arranged in a single-row 6-pin layout with pins 1–6 labeled D, D, S, G, D, D respectively.

Pin/Terminal	Circuit Role	Design Meaning
1	Drain	Primary high-current output path; electrically and thermally connected to bottom paddle
2	Drain	Parallel drain connection to reduce current density and enhance thermal spreading
3	Source	Reference node for gate control; tied to ground or low-side return path
4	Gate	Control input requiring <5.3 nC charge for full enhancement; sensitive to ESD
5	Drain	Third parallel drain terminal to support 12 A continuous current with low IR drop
6	Drain	Fourth drain connection - all four drain pins share same internal node and thermal mass

Key Features

Feature	Design Value
TrenchFET® silicon process	Delivers industry-leading R_DS(on) × area ratio for minimal conduction loss in 2.05 mm² footprint
100% R_g tested	Ensures consistent gate drive timing and eliminates batch variation in switching speed
Ultra-thin 0.6 mm profile	Enables stacking in multi-layer PCBs and integration into ultra-low-profile consumer modules
Exposed drain paddle	Provides direct thermal path to PCB copper, reducing junction-to-ambient resistance by >40% vs. standard SC-70
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709E material requirements

Applications

Load Switching	DC/DC Buck Converter
Use Scenario: Power sequencing for USB-C PD port protection and hot-swap control in portable battery packs. IC Role / Device Role / Timing Role: High-side load switch controlling 5–20 V input rails with fast turn-on (<15 ns) and low quiescent current. Use Value: Enables <100 μs response to overcurrent events while maintaining <15 mΩ on-resistance for minimal voltage droop.	Use Scenario: Synchronous rectifier in 3.3 V/5 V output stage of point-of-load (POL) converters for FPGA and SoC supplies. IC Role / Device Role / Timing Role: Low-side switching element driven by controller PWM, operating at 500 kHz–2 MHz. Use Value: Achieves >95% efficiency at 10 A due to 18.5 mΩ R_DS(on) at 4.5 V gate drive and 1.4 nC Q_gd.
Power Bank Output Stage	Industrial Sensor Node Power Management
Use Scenario: Output enable switch in dual-cell Li-ion power banks delivering regulated 5 V/9 V/12 V via USB-PD negotiation. IC Role / Device Role / Timing Role: Final-stage pass element isolating battery from output bus during fault or sleep mode. Use Value: Supports 12 A peak load with <0.15 V dropout at full current, minimizing thermal rise in sealed enclosures.	Use Scenario: Controlled power gating for wireless sensor transceivers (BLE/Zigbee) in battery-powered IIoT nodes. IC Role / Device Role / Timing Role: Low-quiescent-power enable switch activated by MCU GPIO to cycle power to RF section. Use Value: Delivers <1 μA off-state leakage and <100 ns turn-off delay, extending 10-year battery life in duty-cycled operation.

Load Switching

DC/DC Buck Converter

Use Scenario: Power sequencing for USB-C PD port protection and hot-swap control in portable battery packs.

IC Role / Device Role / Timing Role: High-side load switch controlling 5–20 V input rails with fast turn-on (<15 ns) and low quiescent current.

Use Value: Enables <100 μs response to overcurrent events while maintaining <15 mΩ on-resistance for minimal voltage droop.

Use Scenario: Synchronous rectifier in 3.3 V/5 V output stage of point-of-load (POL) converters for FPGA and SoC supplies.

IC Role / Device Role / Timing Role: Low-side switching element driven by controller PWM, operating at 500 kHz–2 MHz.

Use Value: Achieves >95% efficiency at 10 A due to 18.5 mΩ R_DS(on) at 4.5 V gate drive and 1.4 nC Q_gd.

Power Bank Output Stage

Industrial Sensor Node Power Management

Use Scenario: Output enable switch in dual-cell Li-ion power banks delivering regulated 5 V/9 V/12 V via USB-PD negotiation.

IC Role / Device Role / Timing Role: Final-stage pass element isolating battery from output bus during fault or sleep mode.

Use Value: Supports 12 A peak load with <0.15 V dropout at full current, minimizing thermal rise in sealed enclosures.

Use Scenario: Controlled power gating for wireless sensor transceivers (BLE/Zigbee) in battery-powered IIoT nodes.

IC Role / Device Role / Timing Role: Low-quiescent-power enable switch activated by MCU GPIO to cycle power to RF section.

Use Value: Delivers <1 μA off-state leakage and <100 ns turn-off delay, extending 10-year battery life in duty-cycled operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiA913EDJ-T1-GE3	20 V, R_DS(on) = 22 mΩ @ 4.5 V, SC-70-6L, higher Q_g (7.2 nC)	Lower current rating (8.5 A), less suited for >10 A continuous loads	Select when lower gate charge sensitivity or cost optimization outweighs on-resistance priority
DMN2020LFG-7	20 V, R_DS(on) = 19 mΩ @ 4.5 V, X2-DFN1006-3, 3-pin, no thermal paddle	Smaller footprint but lacks bottom-side thermal path; limited to <5 A continuous	Prefer for ultra-dense layouts where thermal budget permits reduced current handling

Compared with SiA913EDJ-T1-GE3 and DMN2020LFG-7, the SIA430DJT-T4-GE3 delivers the lowest R_DS(on) and highest continuous current in the SC-70-6L form factor, with verified thermal performance via its exposed drain paddle - making it the optimal choice for high-density, high-efficiency load switching where board space and thermal headroom are constrained.

Availability

SIA430DJT-T4-GE3 is available at Aetrix Electronics and suitable for load switching, DC/DC conversion, and power bank output stages requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing traceability.

Supply support for SIA430DJT-T4-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, miniaturization, and reliability across automotive, industrial, and computing markets.

The SIA430DJT-T4-GE3 belongs to Vishay's TrenchFET® PowerPAK® SC-70 family, engineered specifically for high-current, low-voltage load switching and synchronous rectification in space-constrained portable and IoT power systems.

FAQ

What is the maximum continuous drain current rating for SIA430DJT-T4-GE3 at 70 °C case temperature?

The SIA430DJT-T4-GE3 supports 12 A continuous drain current at T_C = 70 °C, as specified in the Absolute Maximum Ratings table. This rating is sustained under steady-state thermal conditions with adequate PCB copper pour and is validated per JEDEC JESD51-2 standards using a 1" × 1" FR4 test board. The SIA430DJT-T4-GE3 maintains this current capability due to its low R_thJC of 5.3 °C/W and four parallel drain terminals.

Does SIA430DJT-T4-GE3 require a gate resistor for typical 3.3 V microcontroller drive?

No external gate resistor is required for basic turn-on with a 3.3 V microcontroller GPIO driving the SIA430DJT-T4-GE3, as its V_GS(th) (1–3 V) ensures full enhancement. However, a 10 Ω series resistor is recommended to dampen ringing during fast switching and limit peak gate current. The SIA430DJT-T4-GE3's 5.3 nC Q_g at 4.5 V ensures low drive power demand, and its 100% R_g tested gate resistance (0.5–5 Ω) guarantees predictable timing behavior.

Can SIA430DJT-T4-GE3 be used in a high-side configuration with 12 V supply?

Yes, the SIA430DJT-T4-GE3 can operate as a high-side switch with a 12 V supply, provided the gate is driven ≥2 V above the source (i.e., ≥14 V) to ensure low R_DS(on). Since it is an N-channel device, a charge pump or bootstrap circuit is required to generate the elevated gate voltage. The SIA430DJT-T4-GE3's ±20 V V_GS rating and 20 V V_DS rating make it compatible with such configurations when properly biased.

What is the thermal resistance from junction to ambient for SIA430DJT-T4-GE3 on a standard PCB?

The SIA430DJT-T4-GE3 has a typical R_thJA of 28 °C/W and maximum of 36 °C/W for t ≤ 5 s on a 1" × 1" FR4 board with 2 oz copper, per the datasheet's Note b. This value assumes surface mounting with soldered bottom paddle contact. The SIA430DJT-T4-GE3 achieves this performance via its exposed drain paddle, which provides a low-impedance thermal path to the PCB - significantly better than standard SC-70 packages without thermal pads.

Is SIA430DJT-T4-GE3 suitable for automotive applications?

The SIA430DJT-T4-GE3 is not AEC-Q101 qualified and is intended for commercial and industrial applications only. While its -55 °C to +150 °C operating temperature range meets some automotive ambient requirements, Vishay does not certify this part for automotive use. For automotive-grade alternatives, consult Vishay's AEC-Q101-qualified PowerPAK® SC-70 offerings - the SIA430DJT-T4-GE3 remains ideal for consumer, computing, and industrial power management where qualification is not mandated.

SIA430DJT-T4-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: PowerPAK® SC-70-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Ta), 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 13.5mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 800 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 3.5W (Ta), 19.2W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerPAK® SC-70-6

SIA430DJT-T4-GE3 FAQ

1.How can I place an order for SIA430DJT-T4-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SIA430DJT-T4-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SIA430DJT-T4-GE3 reliable?

The price and inventory of SIA430DJT-T4-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SIA430DJT-T4-GE3 is usually 5 days.

3.What payment methods are accepted for SIA430DJT-T4-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SIA430DJT-T4-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SIA430DJT-T4-GE3?

SIA430DJT-T4-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SIA430DJT-T4-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SIA430DJT-T4-GE3?

For technical support, including SIA430DJT-T4-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SIA430DJT-T4-GE3 requirements.

6.How does Aetrix verify that SIA430DJT-T4-GE3 is sourced from the original manufacturer or authorized distributors?

All SIA430DJT-T4-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SIA430DJT-T4-GE3 meets industry standards.

7.What is the process for return or replacement of SIA430DJT-T4-GE3?

All SIA430DJT-T4-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SIA430DJT-T4-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SIA430DJT-T4-GE3 part is unused and in its original packaging.

Return procedure for SIA430DJT-T4-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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